MMBT3904_08 [DIODES]

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR; NPN小信号表面贴装晶体管
MMBT3904_08
型号: MMBT3904_08
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
NPN小信号表面贴装晶体管

晶体 晶体管
文件: 总4页 (文件大小:83K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MMBT3904  
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR  
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Features  
Mechanical Data  
Epitaxial Planar Die Construction  
Case: SOT-23  
Complementary PNP Type Available (MMBT3906)  
Ideal for Medium Power Amplification and Switching  
Lead, Halogen and Antimony Free, RoHS Compliant (Note 2)  
"Green" Device (Note 3)  
Case Material: Molded Plastic, “Green” Molding Compound,  
(Note 3). UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminal Connections: See Diagram  
Terminals: Lead Free Plating (Matte Tin Finish annealed over  
Alloy 42 leadframe). Solderable per MIL-STD-202, Method 208  
Qualified to AEC-Q101 Standards for High Reliability  
Marking Information: See Page 4  
Ordering Information: See Page 4  
Weight: 0.008 grams (approximate)  
C
E
Device Schematic  
B
Top View  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
60  
Unit  
V
Collector-Emitter Voltage  
40  
V
Emitter-Base Voltage  
6.0  
V
Collector Current - Continuous (Note 1)  
200  
mA  
Thermal Characteristics  
Characteristic  
Power Dissipation (Note 1)  
Symbol  
PD  
Value  
300  
Unit  
mW  
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage and Temperature Range  
417  
°C/W  
°C  
Rθ  
TJ, TSTG  
JA  
-55 to +150  
Notes:  
1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our  
website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. No purposefully added lead.  
3. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date  
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
1 of 4  
www.diodes.com  
December 2008  
© Diodes Incorporated  
MMBT3904  
Document number: DS30036 Rev. 18 - 2  
MMBT3904  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage (Note 4)  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
Symbol  
Min  
Max  
Unit  
Test Condition  
IC = 10μA, IE = 0  
60  
40  
6.0  
V
V
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICEX  
50  
50  
IC = 1.0mA, IB = 0  
V
IE = 10μA, IC = 0  
VCE = 30V, VEB(OFF) = 3.0V  
VCE = 30V, VEB(OFF) = 3.0V  
nA  
nA  
Base Cutoff Current  
IBL  
ON CHARACTERISTICS (Note 4)  
IC = 100µA, VCE = 1.0V  
IC = 1.0mA, VCE = 1.0V  
IC = 10mA, VCE = 1.0V  
40  
70  
100  
60  
DC Current Gain  
300  
hFE  
IC  
= 50mA, VCE = 1.0V  
30  
IC = 100mA, VCE = 1.0V  
IC = 10mA, IB = 1.0mA  
IC = 50mA, IB = 5.0mA  
IC = 10mA, IB = 1.0mA  
IC = 50mA, IB = 5.0mA  
0.20  
0.30  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
V
V
VCE(SAT)  
VBE(SAT)  
0.65  
0.85  
0.95  
SMALL SIGNAL CHARACTERISTICS  
Output Capacitance  
4.0  
8.0  
10  
pF  
pF  
Cobo  
Cibo  
hie  
1.0  
0.5  
100  
1.0  
VCB = 5.0V, f = 1.0MHz, IE = 0  
VEB = 0.5V, f = 1.0MHz, IC = 0  
Input Capacitance  
Input Impedance  
kΩ  
Voltage Feedback Ratio  
Small Signal Current Gain  
Output Admittance  
8.0  
400  
40  
x 10-4  
hre  
VCE = 10V, IC = 1.0mA,  
f = 1.0kHz  
hfe  
hoe  
μS  
VCE = 20V, IC = 10mA,  
f = 100MHz  
Current Gain-Bandwidth Product  
Noise Figure  
300  
MHz  
fT  
VCE = 5.0V, IC = 100μA,  
RS = 1.0kΩ, f = 1.0kHz  
NF  
5.0  
dB  
SWITCHING CHARACTERISTICS  
Delay Time  
35  
35  
ns  
ns  
ns  
ns  
td  
tr  
VCC = 3.0V, IC = 10mA,  
VBE(off) = - 0.5V, IB1 = 1.0mA  
Rise Time  
Storage Time  
200  
50  
ts  
tf  
VCC = 3.0V, IC = 10mA,  
IB1 = IB2 = 1.0mA  
Fall Time  
Notes:  
4. Short duration pulse test used to minimize self-heating effect.  
1
400  
350  
300  
250  
Pw = 10ms  
0.1  
DC  
200  
150  
100  
Pw = 100ms  
0.01  
T
= 25°C  
A
R
= 417°C/W  
50  
0
θJA  
Single Non-repetitive Pulse  
DUT mounted onto 1xMRP  
FR-4 board  
0.001  
0
200  
175  
TA, AMBIENT TEMPERATURE (°C)  
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 1)  
25  
50  
150  
75 100 125  
0.1  
1
10  
100  
VCE, COLLECTOR-EMITTER VOLTAGE (V)  
Fig. 2 Typical Collector Current  
vs. Collector-Emitter Voltage  
2 of 4  
www.diodes.com  
December 2008  
© Diodes Incorporated  
MMBT3904  
Document number: DS30036 Rev. 18 - 2  
MMBT3904  
1
1,000  
100  
0.1  
10  
1
0.01  
15  
1
0.1  
1
10  
1,000  
1,000  
100  
0.1  
10  
IC, COLLECTOR CURRENT (mA)  
Fig. 3 Typical DC Current Gain vs. Collector Current  
100  
IC, COLLECTOR CURRENT (mA)  
Fig. 4 Typical Collector-Emitter Saturation Voltage  
vs. Collector Current  
10  
10  
1
5
0.1  
0
0.1  
1
10  
100  
0.1  
10  
100  
1,000  
1
VR, REVERSE VOLTAGE (V)  
IC, COLLECTOR CURRENT (mA)  
Fig. 6 Typical Capacitance Characteristics  
Fig. 5 Typical Base-Emitter Saturation Voltage  
vs. Collector Current  
Ordering Information (Note 5)  
Part Number  
Case  
Packaging  
MMBT3904-7-F  
SOT-23  
3000/Tape & Reel  
Notes:  
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
Marking Information  
K1N = Product Type Marking Code  
YM = Date Code Marking  
Y = Year (ex: N = 2002)  
K1N  
M = Month (ex: 9 = September)  
Date Code Key  
Year  
1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015  
Code  
J
K
L
M
N
P
R
S
T
U
V
W
X
Y
Z
A
B
C
Month  
Code  
Jan  
1
Feb  
2
Mar  
3
Apr  
4
May  
5
Jun  
6
Jul  
7
Aug  
8
Sep  
9
Oct  
O
Nov  
N
Dec  
D
3 of 4  
www.diodes.com  
December 2008  
© Diodes Incorporated  
MMBT3904  
Document number: DS30036 Rev. 18 - 2  
MMBT3904  
Package Outline Dimensions  
SOT-23  
A
Dim  
A
B
C
D
F
G
H
J
K
Min  
Max  
0.51  
1.40  
2.50  
1.03 0.915  
0.60 0.535  
Typ  
0.40  
1.30  
2.40  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.013 0.10  
0.903 1.10  
-
C
B
2.05  
3.00  
1.83  
2.90  
0.05  
1.00  
0.400  
0.55  
0.11  
-
H
M
K
K1  
K1  
L
M
-
D
0.45  
0.085 0.18  
0° 8°  
0.61  
F
J
L
G
α
All Dimensions in mm  
Suggested Pad Layout  
Y
Dimensions Value (in mm)  
Z
X
Y
C
E
2.9  
0.8  
0.9  
2.0  
1.35  
Z
C
E
X
IMPORTANT NOTICE  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product  
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall  
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,  
harmless against all damages.  
LIFE SUPPORT  
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written  
approval of the President of Diodes Incorporated.  
4 of 4  
www.diodes.com  
December 2008  
© Diodes Incorporated  
MMBT3904  
Document number: DS30036 Rev. 18 - 2  

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