MMBT3904_08 [DIODES]
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR; NPN小信号表面贴装晶体管![MMBT3904_08](http://pdffile.icpdf.com/pdf1/p00180/img/icpdf/MMBT3_1012506_icpdf.jpg)
型号: | MMBT3904_08 |
厂家: | ![]() |
描述: | NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
文件: | 总4页 (文件大小:83K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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MMBT3904
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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Features
Mechanical Data
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•
•
•
•
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Epitaxial Planar Die Construction
•
•
Case: SOT-23
Complementary PNP Type Available (MMBT3906)
Ideal for Medium Power Amplification and Switching
Lead, Halogen and Antimony Free, RoHS Compliant (Note 2)
"Green" Device (Note 3)
Case Material: Molded Plastic, “Green” Molding Compound,
(Note 3). UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe). Solderable per MIL-STD-202, Method 208
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•
•
Qualified to AEC-Q101 Standards for High Reliability
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Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.008 grams (approximate)
C
E
Device Schematic
B
Top View
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Value
60
Unit
V
Collector-Emitter Voltage
40
V
Emitter-Base Voltage
6.0
V
Collector Current - Continuous (Note 1)
200
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 1)
Symbol
PD
Value
300
Unit
mW
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
417
°C/W
°C
Rθ
TJ, TSTG
JA
-55 to +150
Notes:
1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
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December 2008
© Diodes Incorporated
MMBT3904
Document number: DS30036 Rev. 18 - 2
MMBT3904
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 4)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Symbol
Min
Max
Unit
Test Condition
IC = 10μA, IE = 0
60
40
6.0
⎯
V
V
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICEX
⎯
⎯
⎯
50
50
IC = 1.0mA, IB = 0
V
IE = 10μA, IC = 0
VCE = 30V, VEB(OFF) = 3.0V
VCE = 30V, VEB(OFF) = 3.0V
nA
nA
Base Cutoff Current
IBL
⎯
ON CHARACTERISTICS (Note 4)
IC = 100µA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
⎯
⎯
40
70
100
60
DC Current Gain
300
hFE
⎯
⎯
⎯
IC
= 50mA, VCE = 1.0V
30
IC = 100mA, VCE = 1.0V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
0.20
0.30
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V
V
VCE(SAT)
VBE(SAT)
⎯
0.65
⎯
0.85
0.95
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
4.0
8.0
10
pF
pF
Cobo
Cibo
hie
⎯
⎯
1.0
0.5
100
1.0
VCB = 5.0V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
Input Capacitance
Input Impedance
kΩ
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
8.0
400
40
x 10-4
⎯
hre
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
hfe
hoe
μS
VCE = 20V, IC = 10mA,
f = 100MHz
Current Gain-Bandwidth Product
Noise Figure
300
MHz
fT
⎯
VCE = 5.0V, IC = 100μA,
RS = 1.0kΩ, f = 1.0kHz
NF
5.0
dB
⎯
SWITCHING CHARACTERISTICS
Delay Time
35
35
ns
ns
ns
ns
td
tr
⎯
⎯
⎯
⎯
VCC = 3.0V, IC = 10mA,
VBE(off) = - 0.5V, IB1 = 1.0mA
Rise Time
Storage Time
200
50
ts
tf
VCC = 3.0V, IC = 10mA,
IB1 = IB2 = 1.0mA
Fall Time
Notes:
4. Short duration pulse test used to minimize self-heating effect.
1
400
350
300
250
Pw = 10ms
0.1
DC
200
150
100
Pw = 100ms
0.01
T
= 25°C
A
R
= 417°C/W
50
0
θJA
Single Non-repetitive Pulse
DUT mounted onto 1xMRP
FR-4 board
0.001
0
200
175
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 1)
25
50
150
75 100 125
0.1
1
10
100
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
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December 2008
© Diodes Incorporated
MMBT3904
Document number: DS30036 Rev. 18 - 2
MMBT3904
1
1,000
100
0.1
10
1
0.01
15
1
0.1
1
10
1,000
1,000
100
0.1
10
IC, COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain vs. Collector Current
100
IC, COLLECTOR CURRENT (mA)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
10
10
1
5
0.1
0
0.1
1
10
100
0.1
10
100
1,000
1
VR, REVERSE VOLTAGE (V)
IC, COLLECTOR CURRENT (mA)
Fig. 6 Typical Capacitance Characteristics
Fig. 5 Typical Base-Emitter Saturation Voltage
vs. Collector Current
Ordering Information (Note 5)
Part Number
Case
Packaging
MMBT3904-7-F
SOT-23
3000/Tape & Reel
Notes:
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K1N = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
K1N
M = Month (ex: 9 = September)
Date Code Key
Year
1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015
Code
J
K
L
M
N
P
R
S
T
U
V
W
X
Y
Z
A
B
C
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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December 2008
© Diodes Incorporated
MMBT3904
Document number: DS30036 Rev. 18 - 2
MMBT3904
Package Outline Dimensions
SOT-23
A
Dim
A
B
C
D
F
G
H
J
K
Min
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
0.40
1.30
2.40
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013 0.10
0.903 1.10
-
C
B
2.05
3.00
1.83
2.90
0.05
1.00
0.400
0.55
0.11
-
H
M
K
K1
K1
L
M
-
D
0.45
0.085 0.18
0° 8°
0.61
F
J
L
G
α
All Dimensions in mm
Suggested Pad Layout
Y
Dimensions Value (in mm)
Z
X
Y
C
E
2.9
0.8
0.9
2.0
1.35
Z
C
E
X
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
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December 2008
© Diodes Incorporated
MMBT3904
Document number: DS30036 Rev. 18 - 2
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