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MMBT3904_11 [TSC]

300mW, NPN Small Signal Transistor; 300MW， NPN小信号晶体管
MMBT3904_11
型号： MMBT3904_11
厂家： TAIWAN SEMICONDUCTOR COMPANY, LTD    TAIWAN SEMICONDUCTOR COMPANY, LTD
描述：

300mW, NPN Small Signal Transistor
300MW， NPN小信号晶体管

晶体 晶体管
文件： 总3页 (文件大小：316K)
中文：  中文翻译
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MMBT3904  
300mW, NPN Small Signal Transistor  
Small Signal Transistor  
SOT-23  
3 Collector  
A
F
2 Emitter  
1 Base  
B
E
Features  
—Epitaxial planar die construction  
—Surface device type mounting  
—Moisture sensitivity level 1  
C
G
D
—Matte Tin(Sn) lead finish with Nickel(Ni) underplate  
—Pb free version and RoHS compliant  
—Green compound (Halogen free) with suffix "G" on  
packing code and prefix "G" on date code  
Unit (mm)  
Unit (inch)  
Dimensions  
Min  
2.80  
1.20  
0.30  
1.80  
2.25  
0.90  
Max  
Min  
Max  
Mechanical Data  
—Case : SOT- 23 small outline plastic package  
A
B
C
D
E
F
3.00 0.110 0.118  
1.40 0.047 0.055  
0.50 0.012 0.020  
2.00 0.071 0.079  
2.55 0.089 0.100  
1.20 0.035 0.043  
—Terminal: Matte tin plated, lead free., solderable  
per MIL-STD-202, Method 208 guaranteed  
—High temperature soldering guaranteed: 260°C/10s  
—Weight : 0.008gram (approximately)  
—Marking Code : 1AM  
G
0.550 REF  
0.022 REF  
Ordering Information  
Suggested PAD Layout  
0.95  
Part No.  
MMBT3904 RF  
MMBT3904 RFG  
Package  
SOT-23  
SOT-23  
Packing  
Marking  
1AM  
0.037  
3K / 7" Reel  
3K / 7" Reel  
1AM  
2.0  
0.079  
0.9  
0.035  
0.8  
0.031  
Maximum Ratings and Electrical Characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Maximum Ratings  
Type Number  
Symbol  
Value  
Units  
mW  
V
Power Dissipation  
PD  
VCBO  
VCEO  
VEBO  
IC  
300  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
60  
40  
V
6
V
200  
mA  
°C  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to + 150  
Notes:1. Valid provided that electrodes are kept at ambient temperature  
Version : C11  
MMBT3904  
300mW, NPN Small Signal Transistor  
Small Signal Transistor  
Electrical Characteristics  
Type Number  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Min  
Max  
-
Units  
V
IC= 10μA  
IC= 1mA  
IE= 10μA  
IE= 0  
60  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
IB= 0  
40  
-
V
IC= 0  
6
-
V
VCB= 60V  
VCE= 30V  
VEB= 5V  
IE= 0  
-
0.1  
50  
0.1  
400  
-
μA  
nA  
μA  
VBE(OFF)= 3V  
IC= 0  
ICEO  
Collector Cut-off Current  
-
IEBO  
Emitter Cut-offCurrent  
-
VCE= 1V  
VCE= 1V  
VCE= 1V  
IC= 50mA  
IC= 50mA  
IC= 10mA  
IC= 10mA  
IC= 50mA  
IC= 100mA  
IB= 5mA  
IB= 5mA  
f= 100MHz  
100  
hFE  
DC current gain  
60  
30  
-
VCE(sat)  
-
0.3  
0.95  
-
Collector-Emitter saturation voltage  
Base-Emitter saturation voltage  
V
V
VBE(sat)  
-
fT  
td  
tr  
Transition frequency  
Delay time  
V
V
V
V
V
CE= 20V  
250  
MHz  
nS  
nS  
nS  
nS  
CC=3V VBE=0.5V IC=10mA IB1=1.0mA  
CC=3V VBE=0.5V IC=10mA IB1=1.0mA  
CC=3V IC=10mA IB1=IB2=1.0mA  
-
-
-
-
35  
35  
200  
50  
Rise time  
ts  
tf  
Storage time  
Fall time  
CC=3V IC=10mA IB1=IB2=1.0mA  
Tape & Reel specification  
TSC label  
Item  
Symbol  
Dimension(mm)  
3.15 ±0.10  
2.77 ±0.10  
1.22 ±0.10  
1.50 ± 0.10  
178 ± 1  
A
B
Carrier width  
Top Cover Tape  
Carrier length  
C
Carrier depth  
d
Sprocket hole  
Carieer Tape  
D
Reel outside diameter  
Reel inner diameter  
Feed hole width  
Sprocke hole position  
Punch hole position  
Sprocke hole pitch  
Embossment center  
Overall tape thickness  
Tape width  
D1  
D2  
E
55 Min  
Any Additional Label (If Required)  
13.0 ± 0.20  
1.75 ±0.10  
3.50 ±0.05  
4.00 ±0.10  
2.00 ±0.05  
0.229 ±0.013  
8.10 ±0.20  
12.30 ±0.20  
P0  
d
P1  
F
T
E
P0  
P1  
T
A
F
W
C
B
W
W1  
Reel width  
W1  
D
D2  
D1  
Direction of Feed  
Version : C11  
MMBT3904  
300mW, NPN Small Signal Transistor  
Small Signal Transistor  
Rating and Characteristic Curves  
Typical Pulsed Current Gain  
Collector-Emitter Saturation  
Voltage vs Collector Current  
vs Collector Current  
500  
V CE = 5V  
0.15  
β = 10  
400  
300  
200  
100  
0
125 °C  
125 °C  
0.1  
25 °C  
25 °C  
0.05  
- 40 °C  
- 40 °C  
0.1  
1
10  
100  
0.1  
1
10  
1 00  
I C - COLLECTOR CURRENT (mA)  
I C - COLLECTOR CURRENT (mA)  
Base-Emitter Saturation  
Voltage vs Collector Current  
Base-Emitter ON Voltage vs  
Collector Current  
1
0.8  
0.6  
0.4  
0.2  
V
= 5V  
β
= 10  
1
CE  
- 40 °C  
- 40 °C  
25 °C  
0.8  
0.6  
0.4  
25 °C  
125 °C  
125 °C  
0.1  
1
10  
100  
0.1  
1
10  
100  
I C - COLLECTOR CURRENT (mA)  
C
I
- COLLECTOR CURRENT (mA)  
Capacitance vs  
Reverse Bias Voltage  
Collector-Cutoff Current  
vs Ambient Temperature  
10  
500  
f = 1.0 MHz  
VCB= 30V  
100  
10  
1
5
4
C
ibo  
3
2
C
0.1  
obo  
1
0.1  
25  
50  
75  
100  
125  
150  
1
10  
100  
°
TA - AMBIENT TEMPERATURE ( C)  
REVERSE BIAS VOLTAGE (V)  
Version : C11  

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