MMBT3904_15 [KEXIN]
NPN Transistors;
| 型号： | MMBT3904_15 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | NPN Transistors |
| 文件： | 总2页 (文件大小：1192K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
NPN Transistors
MMBT3904 (KMBT3904)
SOT-23-3
Unit: mm
+0.2
-0.1
2.9
0.4
+0.1
-0.1
3
Features
● Complementary toMMBT3906
● Marking:1AM
1
2
+0.02
-0.02
+0.1
0.15
0.95
-0.1
+0.1
-0.2
1.9
1. Base
2. Emitter
3. Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
60
40
V
6
V
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
0.2
A
PC
0.2
W
TJ
150
Storage Temperature
Tstg
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Symbol
Test Conditions
Min
60
40
6
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector- emitter cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
Ic= 100 μA， I
Ic= 1 mA， I = 0
= 100μA， I
CB= 60 V , I
E= 0
B
I
E
C= 0
I
CBO
CEX
EBO
V
V
V
E
= 0
100
50
nA
V
I
CE= 30 V , VEB(off）=- 3V
EB= 5V , I =0
I
C
100
0.2
I
I
I
I
C
= 10 mA, I
B
B
= 1mA
= 5mA
Collector-emitter saturation voltage
Base - emitter saturation voltage
V
CE(sat)
BE(sat)
C
C
C
= 50 mA, I
0.3
= 10 mA, I
= 50 mA, I
B
= 1mA
= 5mA
0.65
0.85
0.95
400
V
B
V
V
V
V
CE= 1V, I
CE= 1V, I
CE= 1V, I
C= 10mA
C= 50mA
C= 100mA
100
60
hfe（1）
hfe（2）
hfe（3）
DC current gain
30
Delay time
Rise time
Storage time
Fall time
td
CC= 3V, VBE(off)=- 0.5V
= 10mA, IB1= 1mA
35
35
t
r
I
C
ns
t
s
V
CC= 3V, I
C= 10mA
200
50
tf
IB1=IB2= 1mA
Collector input capacitance
Collector output capacitance
Transition frequency
C
ib
V
EB= 0.5V, I
CB= 5V, I = 0,f=1MHz
CE= 20V, I = 10mA,f=100MHz 300
E
= 0,f=1MHz
8
4
pF
Cob
T
V
V
E
f
C
MHz
■ Classification of hfe(1)
Type
MMBT3904-L MMBT3904-H MMBT3904-J
100-200 200-300 300-400
MMBT3904
Range
100-300
1
www.kexin.com.cn
SMD Type
Transistors
MMBT3904 (KMBT3904)
Typical Characteristics
hFE —— IC
Static Characteristic
100
80
60
40
20
0
400
COMMON EMITTER
COMMON
EMITTER
VCE=1V
500uA
Ta=25℃
Ta=100
℃
450uA
400uA
300
200
100
0
350uA
300uA
Ta=25℃
250uA
200uA
150uA
100uA
IB=50uA
0.1
0.3
1
3
10
30
100
0
4
8
12
16
20
200
1.2
60
COLLECTOR CURRENT IC (mA)
COLLECTOR-EMITTER VOLTAGE VCE (V)
IC
VBEsat ——
VCEsat —— IC
1.2
0.8
0.4
600
300
Ta=25℃
.
Ta=100℃
100
Ta=100℃
Ta=25℃
30
10
β=10
β=10
0.0
1
3
10
30
100
1
3
10
100
300
30
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
IC —— VBE
Cob/ Cib ——
VCB/ VEB
9
100
COMMON EMITTER
VCE=1V
f=1MHz
IE=0/IC=0
30
10
Ta=25℃
Cib
Ta=100℃
3
3
1
Cob
Ta=25℃
0.3
0.1
1
0.1
0.3
1
3
10
20
0.2
0.4
0.6
0.8
1.0
REVERSE VOLTAGE
V
(V)
BASE-EMMITER VOLTAGE VBE (V)
PC —— Ta
fT —— IC
300
250
VCE=20V
Ta=25
℃
200
150
100
50
200
100
0
1
3
10
0
25
50
75
100
125
150
30
COLLECTOR CURRENT IC (mA)
AMBIENT TEMPERATURE Ta
(℃)
2
www.kexin.com.cn
相关型号：
©2020 ICPDF网 联系我们和版权申明