MMBT3906 [STMICROELECTRONICS]
SMALL SIGNAL PNP TRANSISTOR; 小信号PNP晶体管
| 型号： | MMBT3906 |
| 厂家： | 
ST |
| 描述： | SMALL SIGNAL PNP TRANSISTOR |
| 文件： | 总4页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT3906
®
SMALL SIGNAL PNP TRANSISTOR
PRELIMINARY DATA
Type
Marking
36
MMBT3906
■
■
SILICON EPITAXIAL PLANAR PNP
TRANSISTOR
MINIATURE SOT-23 PLASTIC PACKAGE
FOR SURFACE MOUNTING CIRCUITS
TAPE AND REEL PACKING
THE NPN COMPLEMENTARY TYPE IS
MMBT3904
■
■
APPLICATIONS
SOT-23
■
WELL SUITABLE FOR PORTABLE
EQUIPMENT
■
SMALL LOAD SWITCH TRANSISTOR WITH
HIGH GAIN AND LOW SATURATION
VOLTAGE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
-60
Unit
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
V
V
-40
-6
V
-200
350
mA
mW
oC
oC
o
Ptot
Total Dissipation at TC = 25 C
Tstg
Storage Temperature
-65 to 150
150
Tj
Max. Operating Junction Temperature
1/4
June 2002
MMBT3906
THERMAL DATA
Rthj-amb
•
Thermal Resistance Junction-Ambient
Max
357.1
oC/W
2
• Device mounted on a PCB area of 1 cm
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
VCE = -30 V
Min.
Typ.
Max.
Unit
ICEX
Collector Cut-off
-50
nA
Current (VBE = 3 V)
IBEX
Collector Cut-off
Current (VBE = 3 V)
VCE = -30 V
IC = -1 mA
-50
nA
V
V(BR)CEO Collector-Emitter
Breakdown Voltage
(IB = 0)
-40
-60
-6
V(BR)CBO Collector-Base
Breakdown Voltage
(IE = 0)
V
V
IC = -10 µA
IE = -10 µA
V(BR)EBO Emitter-Base
Breakdown Voltage
(IC = 0)
VCE(sat)
VBE(sat)
hFE
Collector-Emitter
Saturation Voltage
IC = -10 mA
IC = -50 mA
IB = -1 mA
IB = -5 mA
-0.25
-0.4
V
V
Base-Emitter
Saturation Voltage
IC = -10 mA
IC = -50 mA
IB = -1 mA
IB = -5 mA
-0.85
-0.95
V
V
-0.65
DC Current Gain
IC = -0.1 mA
IC = -1 mA
IC = -10 mA
IC = -50 mA
IC = -100 mA
VCE = -1 V
VCE = -1 V
VCE = -1 V
VCE = -1 V
VCE = -1 V
60
80
100
60
300
30
fT
Transition Frequency
Noise Figure
IC = -10mA VCE = -20 V f = 100MHz
250
MHz
dB
NF
VCE = -5 V IC = -0.1 mA f = 10 Hz
to 15.7 KHz RG = 1 KΩ
4
6
CCBO
CEBO
Collector-Base
Capacitance
IE = 0
VCB = -5 V f = 100 KHz
pF
pF
Emitter-Base
Capacitance
IC = 0
VEB = -0.5 V f = 100 KHz
25
td
tr
ts
tf
Delay Time
Rise Time
Storage Time
Fall Time
IC = -10 mA
VCC = -3V
IB = -1 mA
35
35
ns
ns
ns
ns
IC = -10 mA
VCC = -3V
IB1 = -IB2 = -1 mA
225
72
Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
2/4
MMBT3906
SOT-23 MECHANICAL DATA
mm
mils
DIM.
MIN.
0.85
0.65
1.20
2.80
0.95
1.9
TYP.
MAX.
1.1
MIN.
33.4
25.6
47.2
110.2
37.4
74.8
82.6
14.9
11.8
0
TYP.
MAX.
43.3
37.4
55.1
118
A
B
C
D
E
F
0.95
1.4
3
1.05
2.05
2.5
41.3
80.7
98.4
18.8
23.6
3.9
G
H
L
2.1
0.38
0.3
0.48
0.6
M
N
O
0
0.1
0.3
0.65
0.17
11.8
3.5
25.6
6.7
0.09
0044616/B
3/4
MMBT3906
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2002 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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4/4
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