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MMBT3906 [ZOWIE]

GENERAL PURPOSE TRANSISTOR NPN SILICON; 通用晶体管NPN硅
MMBT3906
型号： MMBT3906
厂家： ZOWIE TECHNOLOGY CORPORATION    ZOWIE TECHNOLOGY CORPORATION
描述：

GENERAL PURPOSE TRANSISTOR NPN SILICON
通用晶体管NPN硅

晶体 晶体管 开关 光电二极管
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Zowie Technology Corporation  
General Purpose Transistor  
NPN Silicon  
COLLECTOR  
3
3
BASE  
1
1
MMBT3906  
2
2
EMITTER  
SOT-23  
MAXIMUM RATINGS  
Value  
-40  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Unit  
Vdc  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
-40  
Vdc  
Emitter-Base Voltage  
-5.0  
-200  
Vdc  
Collector Current-Continuous  
mAdc  
THERMAL CHARACTERISTICS  
Max.  
Symbol  
PD  
Unit  
Characteristic  
Total Device Dissipation FR-5 Board(1) TA=25oC  
225  
1.8  
mW  
Derate above 25oC  
mW / oC  
Thermal Resistance Junction to Ambient  
R
JA  
556  
oC / W  
Total Device Dissipation Alumina Substrate,(2) TA=25oC  
300  
2.4  
mW  
Derate above 25oC  
PD  
mW / oC  
Thermal Resistance Junction to Ambient  
Junction and Storage Temperature  
R
JA  
417  
oC / W  
oC  
TJ,TSTG  
-55 to +150  
DEVICE MARKING  
MMBT3906=2A  
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)  
Symbol  
Max.  
Min.  
-40  
Unit  
Vdc  
Characteristic  
OFF CHARACTERISTICS  
(3)  
Collector-Emitter Breakdowe Voltage  
( IC=1.0mAdc, IB=0 )  
V(BR)CEO  
-
Collector-Base Breakdowe Voltage  
( IC= -10 uAdc, IE=0 )  
V(BR)CBO  
V(BR)EBO  
-40  
-
-
Vdc  
Vdc  
Emitter-Base Breakdowe Voltage  
( IE= -10 uAdc, IC=0 )  
-5.0  
Base Cutoff Current  
( VCE= -30 Vdc, VEB= -3.0 Vdc )  
IBL  
-
-
-50  
-50  
nAdc  
nAdc  
Collector Cutoff Current  
( VCE= -30 Vdc, VEB= -3.0 Vdc )  
ICEX  
REV. : 0  
Zowie Technology Corporation  
Zowie Technology Corporation  
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) (Continued)  
Max.  
Symbol  
Min.  
Unit  
Characteristic  
(3)  
ON CHARACTERISTICS  
DC Current Gain  
( IC= -0.1 mAdc, VCE= -1.0 Vdc )  
( IC= -1.0 mAdc, VCE= -1.0 Vdc )  
( IC= -10 mAdc, VCE= -1.0 Vdc )  
( IC= -50 mAdc, VCE= -1.0 Vdc )  
( IC= -100 mAdc, VCE= -1.0 Vdc )  
60  
80  
100  
60  
-
-
HFE  
-
300  
-
-
30  
Collector-Emitter Saturation Voltage(3)  
( IC= -10 mAdc, IB=-1.0 mAdc )  
( IC= -50 mAdc, IB= -5.0 mAdc )  
VCE(sat)  
VBE(sat)  
Vdc  
Vdc  
-
-
-0.25  
-0.4  
Base-Emitter Saturation Voltage(3)  
( IC= -10 mAdc, IB= -1.0 mAdc )  
( IC= -50 mAdc, IB= -5.0 mAdc )  
-0.65  
-
-0.85  
-0.95  
SMALL-SIGNAL CHARACTERISTIC  
Current-Gain-Bandwidth Product  
fT  
Cobo  
Cibo  
hie  
250  
-
-
MHZ  
pF  
( IC= -10 mAdc, VCE= -20 Vdc, f=100 MHZ )  
Output Capacitance  
4.5  
10  
( VCB= -5.0 Vdc, IE=0, f=1.0 MHZ )  
Input Capacitance  
-
pF  
( VEB= -0.5 Vdc, IC=0, f=1.0 MHZ )  
Input Impedance  
2.0  
0.1  
100  
3.0  
-
12  
k ohms  
( VCE= -10 Vdc, IC= -1.0 mAdc, f=1.0 kHZ )  
Voltage Feedback Ratio  
X 10-4  
hre  
10  
( VCE= -10 Vdc, IC= -1.0 mAdc, f=1.0 kHZ )  
Small-Signal Current Gain  
hfe  
400  
60  
-
( VCE= -10 Vdc, IC= -1.0 mAdc, f=1.0 kHZ )  
Output Admittance  
hoe  
NF  
u mhos  
dB  
( VCE= -10 Vdc, IC= -1.0 mAdc, f=1.0 kHZ )  
Noise Figure  
4.0  
( VCE= -5.0 Vdc, IC= -100 uAdc, RS=1.0 k ohm, f=1.0 kHZ )  
SWITCHING CHARACTERISTICS  
Delay Time  
td  
tr  
-
-
-
-
35  
35  
( VCC= -3.0 Vdc, VBE= -0.5 Vdc,  
IC= -10 mAdc, IB1= -1.0 mAdc )  
nS  
nS  
Rise Time  
Storage Time  
Fall Time  
ts  
tf  
225  
75  
( VCC= -3.0 Vdc,  
IC= -10 mAdc, IB1=IB2= -1.0 mAdc )  
x
x
(1) FR-5=1.0 0.75 0.062in.  
x
x
(2) Alumina=0.4 0.3 0.024in. 99.5% alumina.  
(3) Pulse Test : Pulse Width 300uS, Duty Cycle 2.0%.  
REV. : 0  
Zowie Technology Corporation  
Zowie Technology Corporation  
MMBT3906  
3 V  
3 V  
< 1 ns  
+9.1 V  
275  
275  
< 1 ns  
10 k  
±0.5 V  
10 k  
0
CS < 4 pF*  
CS < 4 pF*  
1N916  
10.6 V  
300 ns  
10 < t1< 500us  
t1  
10.9 V  
DUTY CYCLE = 2%  
DUTY CYCLE = 2%  
* Total shunt capacitance of test jig and connectors  
Figure 1. Delay and Rise Time  
Equivalent Test Circuit  
Figure 2. Storage and Fall Time  
Equivalent Test Circuit  
TYPICAL TRANSIENT CHARACTERISTICS  
10  
5000  
VCC=40 V  
3000  
TJ=25oC  
TJ=125oC  
IC/IB=10  
7.0  
5.0  
2000  
C
obo  
1000  
700  
C
ibo  
500  
3.0  
2.0  
300  
200  
Q
T
Q
A
100  
70  
1.0  
50  
0.1  
0.2 0.3 0.5 0.7 1.0  
2.0 3.0 5.0 7.0 10  
20 30 40  
1.0  
2.0 3.0  
5.0 7.0 10  
20 30  
50 70 100  
200  
I , COLLECTOR CURRENT ( mA )  
C
REVERSE BIAS ( VOLTS )  
Figure 3. Capacitance  
Figure 4. Charge Data  
500  
500  
VCC=40 V  
IB1=IB2  
300  
200  
IC/IB=10  
300  
200  
IC/IB=20  
100  
70  
100  
70  
tr @ VCC=3.0 V  
50  
50  
15 V  
30  
20  
30  
20  
IC/IB=10  
40 V  
10  
7
10  
7
2.0 V  
td @ VOB=0 V  
5
5
1.0  
2.0 3.0 5.0 7.0 10  
20 30  
50 70 100  
200  
1.0  
2.0 3.0  
5.0 7.0 10  
20 30  
50 70 100  
200  
I , COLLECTOR CURRENT ( mA )  
C
I , COLLECTOR CURRENT ( mA )  
C
Figure 5. Turn-On Time  
Figure 6. Fall Time  
REV. : 0  
Zowie Technology Corporation  
Zowie Technology Corporation  
MMBT3906  
TYPICAL TRANSIENT CHARACTERISTICS  
NOISE FIGURE VARIATIONS  
(VCE= -5.0Vdc, TA=25oC, Bandwidth=1.0HZ)  
12  
5.0  
4.0  
SOURCE RESISTANCE=200  
IC=1.0 mA  
f = 1.0 KH  
Z
IC =1.0 mA  
10  
8
SOURCE RESISTANCE=200  
IC=0.5 mA  
IC =100 uA  
IC =0.5 mA  
3.0  
2.0  
SOURCE RESISTANCE=2.0 K  
IC=50uA  
6
4
IC =50 uA  
SOURCE RESISTANCE=2.0 K  
1.0  
0
2
0
0.1 0.2  
0.4  
1.0 2.0  
4.0  
10  
20  
40  
100  
40  
100  
0.1 0.2  
0.4  
1.0 2.0  
4.0  
10  
20  
f, FREQUENCY (kHz)  
RS, SOURCE RESISTANCE ( k OHMS )  
Figure 7.  
Figure 8.  
h PARAMETERS  
(VCE= -10Vdc, f=1.0 kHZ, TA=25oC)  
300  
200  
100  
50  
30  
20  
100  
70  
10  
50  
7
5
30  
0.1  
0.2 0.3  
0.5  
1.0  
2.0 3.0  
5.0  
10  
0.1  
0.2 0.3  
0.5  
1.0  
2.0 3.0  
5.0  
10  
I , COLLECTOR CURRENT ( mA )  
C
I , COLLECTOR CURRENT ( mA )  
C
Figure 9. Current Gain  
Figure 10. Output Admittance  
20  
10  
10  
7.0  
5.0  
5.0  
3.0  
2.0  
2.0  
1.0  
0.5  
1.0  
0.7  
0.5  
0.2  
0.1  
0.2 0.3  
0.5  
1.0  
2.0 3.0  
5.0  
10  
0.1  
0.2 0.3  
0.5 0.7 1.0  
2.0 3.0  
5.0 7.0 10  
I , COLLECTOR CURRENT ( mA )  
C
I , COLLECTOR CURRENT ( mA )  
C
Figure 11. Input Impedance  
Figure 12. Voltage Feedback Ratio  
REV. : 0  
Zowie Technology Corporation  
Zowie Technology Corporation  
MMBT3906  
TYPICAL STATIC CHARACTERISTICS  
2.0  
1.0  
TJ = +125oC  
TJ = +25oC  
VCE=1.0V  
0.7  
0.5  
TJ = -55oC  
0.3  
0.2  
0.1  
0.1  
0.2  
0.3  
0.5 0.7  
1.0  
2.0  
3.0  
5.0  
7.0  
10  
20  
30  
50  
70  
100  
200  
I , COLLECTOR CURRENT ( mA )  
C
Figure 13. DC Current Gain  
1.0  
TJ = 25oC  
0.8  
0.6  
0.4  
10 mA  
30 mA  
100 mA  
IC = 1.0 mA  
0.2  
0
0.01  
0.02  
0.03  
0.05 0.07 0.1  
0.2  
0.3  
0.5  
0.7  
1.0  
2.0  
3.0  
5.0  
7.0  
10  
I , BASE CURRENT ( mA )  
B
Figure 14. Collector Saturation Region  
1.0  
1.0  
VBE(sat) @ IC/IB=10  
+25oC to +125oC  
0.5  
0.8  
0.6  
VC FOR VCE(sat)  
VBE @ ICE=1.0 V  
0
-0.5  
-1.0  
-55oC to +25oC  
-55oC to +25oC  
+25oC to +125oC  
0.4  
0.2  
0
VB FOR VBE(sat)  
VCE(sat) @ IC/IB=10  
-1.5  
-2.0  
1.0  
2.0  
5.0  
10  
20  
50  
100  
200  
0
20  
40  
60  
80  
100 120 140 160 180 200  
I , COLLECTOR CURRENT ( mA )  
C
I , COLLECTOR CURRENT ( mA )  
C
Figure 17. " ON " Voltage  
Figure 16. Temperature Coefficients  
REV. : 0  
Zowie Technology Corporation  

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