MMBT3906 [VISHAY]
SMALL SIGNAL TRANSISTORS (PNP); 小信号晶体管（ PNP ）
| 型号： | MMBT3906 |
| 厂家： | 
VISHAY |
| 描述： | SMALL SIGNAL TRANSISTORS (PNP) |
| 文件： | 总3页 (文件大小：139K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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MMBT3906
SMALL SIGNAL TRANSISTORS (PNP)
SOT-23
FEATURES
¨ PNP Silicon Epitaxial Planar Transistor
.122 (3.1)
.118 (3.0)
for switching and amplifier applications.
.016 (0.4)
Top View
¨ As complementary type, the NPN
3
transistor MMBT3904 is recommended.
¨ This transistor is also available in the TO-92 case with
the type designation 2N3906.
1
2
.037(0.95)
.037(0.95)
MECHANICAL DATA
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
.102 (2.6)
.094 (2.4)
.016 (0.4) .016 (0.4)
Marking code: 2A
Dimensions in inches and (millimeters)
Pin configuration
1 = Base, 2 = Emitter, 3 = Collector.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
SYMBOL
ÐVCBO
ÐVCEO
ÐVEBO
ÐIC
VALUE
40
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
40
V
5.0
V
Collector Current
200
mA
Power Dissipation at TA = 25 ¡C
Ptot
225(1)
300(2)
mW
mW
Thermal Resistance Junction to Substrate Backside
Thermal Resistance Junction to Ambient Air
Junction Temperature
RqSB
RqJA
Tj
320(1)
450(1)
¡C/W
¡C/W
¡C
150
Storage Temperature Range
TS
Ð55 to +150
¡C
NOTES:
(1) Device on fiberglass subtrate, see layout
(2) Device on alumina substrate
1/5/99
MMBT3906
ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
SYMBOL
MIN.
MAX.
UNIT
Collector-Base Breakdown Voltage
at ÐIC = 10 mA, IE = 0
ÐV(BR)CBO
40
Ð
V
Collector-Emitter Breakdown Voltage
at ÐIC = 1 mA, IB = 0
ÐV(BR)CEO
40
5
Ð
Ð
V
V
Emitter-Base Breakdown Voltage
at ÐIE = 10 mA, IC = 0
ÐV(BR)EBO
Collector Saturation Voltage
at ÐIC = 10 mA, ÐIB = 1 mA
at ÐIC = 50 mA, ÐIB = 5 mA
ÐVCEsat
ÐVCEsat
Ð
Ð
0.25
0.4
V
V
Base Saturation Voltage
at ÐIC = 10 mA, ÐIB = 1 mA
at ÐIC = 50 mA, ÐIB = 5 mA
ÐVBEsat
ÐVBEsat
Ð
Ð
0.85
0.95
V
V
Collector-Emitter Cutoff Current
at ÐVEB = 3 V, ÐVCE = 30 V
ÐICEV
Ð
Ð
50
50
nA
nA
Emitter-Base Cutoff Current
at ÐVEB = 3 V, ÐVCE = 30 V
ÐIEBV
DC Current Gain
at ÐVCE = 1 V, ÐIC = 0.1 mA
at ÐVCE = 1 V, ÐIC = 1 mA
at ÐVCE = 1 V, ÐIC = 10 mA
at ÐVCE = 1 V, ÐIC = 50 mA
at ÐVCE = 1 V, ÐIC = 100 mA
hFE
hFE
hFE
hFE
hFE
60
80
100
60
Ð
Ð
300
Ð
Ð
Ð
Ð
Ð
Ð
30
Ð
Input Impedance
at ÐVCE = 10 V, ÐIC = 1 mA, f = 1 kHz
hie
1
250
Ð
10
Ð
kW
MHz
pF
Gain-Bandwidth Product
at ÐVCE = 20 V, ÐIC = 10 mA, f = 100 MHz
fT
Collector-Base Capacitance
at ÐVCB = 5 V, f = 100 kHz
CCBO
4.5
10
Emitter-Base Capacitance
at ÐVEB = 0.5 V, f = 100 kHz
CEBO
Ð
pF
MMBT3906
ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
SYMBOL
MIN.
MAX.
UNIT
Voltage Feedback Ratio
at ÐVCE = 10 V, ÐIC = 1 mA, f = 1 kHz
hre
hfe
hoe
0.5 á 10Ð4
8 á 10Ð4
400
Ð
Ð
Small Signal Current Gain
at ÐVCE = 10 V, ÐIC = 1 mA, f = 1 kHz
100
1
Output Admittance
at ÐVCE = 1 V, ÐIC = 1 mA, f = 1 kHz
40
mS
Noise Figure
at ÐVCE = 5 V, ÐIC = 100 mA, RG = 1 kW,
f = 10 É 15 000 Hz
NF
td
tr
Ð
Ð
Ð
Ð
Ð
4
35
dB
ns
ns
ns
ns
Delay Time (see Fig. 1)
at ÐIB1 = 1 mA, ÐIC = 10 mA
Rise Time (see Fig. 1)
at ÐIB1 = 1 mA, ÐIC = 10 mA
35
Storage Time (see Fig. 2)
at IB1 = ÐIB2 = 1 mA, ÐIC = 10 mA
ts
225
75
Fall Time (see Fig. 2)
at IB1 = ÐIB2 = 1 mA, ÐIC = 10 mA
tf
Fig. 1: Test circuit for delay and rise time
* total shunt capacitance of test jig and connectors
Fig. 2: Test circuit for storage and fall time
* total shunt capacitance of test jig and connectors
0.30 (7.5)
0.12 (3)
.04 (1)
.08 (2)
.04 (1)
.08 (2)
0.59 (15)
0.03 (0.8)
0.47 (12)
0.2 (5)
Dimensions in inches and (millimeters)
0.06 (1.5)
0.20 (5.1)
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