MMBT3904_14 [TSC]
300mW, NPN Small Signal Transistor;型号: | MMBT3904_14 |
厂家: | TAIWAN SEMICONDUCTOR COMPANY, LTD |
描述: | 300mW, NPN Small Signal Transistor |
文件: | 总4页 (文件大小:221K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MMBT3904
Taiwan Semiconductor
Small Signal Product
300mW, NPN Small Signal Transistor
FEATURES
- Epitaxial planar die construction
- Surface device type mounting
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish with Nickel (Ni) underplate
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
SOT-23
MECHANICAL DATA
- Case: SOT- 23, molded plastic
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260oC/10s
- Weight: 0.008g (approximately)
- Marking Code: 1AM
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25℃ unless otherwise noted)
PARAMETER
VALUE
SYMBOL
PD
UNIT
mW
V
Power Dissipation
300
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
VCBO
60
VCEO
40
V
VEBO
6
V
IC
200
mA
oC
Junction and Storage Temperature Range
TJ , TSTG
-55 to +150
Notes:1. Valid provided that electrodes are kept at ambient temperature
PARAMETER
MIN
60
MAX
-
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
UNIT
V
IE = 0
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
IC = 10 μA
IC = 1 mA
IE = 10 μA
IB = 0
40
-
V
IC = 0
6
-
V
IE = 0
V
V
V
V
CB = 60 V
CE = 30 V
EB = 5 V
CE = 1 V
-
0.1
50
0.1
400
-
μA
nA
μA
VBE(OFF) = 3 V
IC = 0
Collector Cut-off Current
ICEO
-
Emitter Cut-off Current
IEBO
-
IC = 10 mA
IC = 50 mA
IC = 100 mA
IB = 5 mA
IB = 5 mA
f= 100MHz
IC = 10 mA
100
hFE
DC Current Gain
VCE = 1 V
60
VCE = 1 V
30
-
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = 50 mA
IC = 50 mA
IC = 10 mA
VBE = 0.5 V
VCE(sat)
-
0.3
0.95
-
V
V
VBE(sat)
-
VCE = 20 V
VCC = 3 V
fT
td
tr
250
Transition frequency
Delay time
MHz
ns
-
-
-
-
35
35
200
50
IB1 = 1.0 mA
Rise time
ns
IC = 10 mA
VCC = 3 V
ts
tf
Storage time
Fall time
ns
IB1 = IB2 = 1.0 mA
ns
Document Number: DS_S1412034
Version: D14
MMBT3904
Taiwan Semiconductor
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(TA=25°C unless otherwise noted)
Fig.1 Typical Pulsed Current Gain
VS. Collector Current
Fig. 2 Collector-Emitter Saturation Voltage
VS. Collector Current
500
0.20
0.15
0.10
0.05
0.00
VCE = 5V
125 °C
β = 10
400
300
125 °C
25 °C
200
25 °C
100
0
- 40 °C
- 40 °C
0.1
1.0
10.0
100.0
0
1
10
100
IC - Collector Current (mA)
IC - Collector Current (mA)
Fig. 3 Base-Emitter Saturation Voltage
VS. Collector Current
Fig. 4 Base-Emitter On Voltage
VS. Collector Current
1.1
1
1
0.8
0.6
0.4
0.2
VCE= 5V
β = 10
0.9
0.8
0.7
0.6
0.5
0.4
0.3
- 40 °C
25 °C
- 40 °C
25 °C
125 °C
125 °C
0.1
1
10
100
0.1
1
10
100
IC - Collector Current (mA)
IC - Collector Current (mA)
Fig. 5 Collector-Cutoff Current
VS. Ambient Temperature
Fig. 6 Capacitance VS.
Reverse Bias Voltage
1000
100
10
10
f = 1.0 MHz
VCB= 30V
C ibo
1
Cobo
0.1
0.01
1
25
50
75
100
125
150
0.1
1
10
100
TA - Ambient Temperature (OC)
Reverse Bias Voltage (V)
Document Number: DS_S1412034
Version: D14
MMBT3904
Taiwan Semiconductor
Small Signal Product
ORDERING INFORMATION
PART NO.
SUFFIX (Note 1)
PACKING
CODE
PACKING CODE
SUFFIX
PART NO.
PACKAGE
PACKING
RF
R5
3K / 7" Reel
MMBT3904
-xx
G
SOT-23
10K / 13" Reel
Note 1: Part No. Suffix „-xx “ would be used for special requirement
EXAMPLE
PART NO.
PACKING CODE
PREFERRED P/N
PACKING CODE
DESCRIPTION
PART NO.
SUFFIX
SUFFIX
Multiple manufacture
source
MMBT3904 RF
MMBT3904
RF
RF
Multiple manufacture
source
Green compound
MMBT3904 RFG MMBT3904
MMBT3904-D0 RFG MMBT3904
MMBT3904-B0 RFG MMBT3904
G
G
G
Defined manufacture
source
Green compound
-D0
-B0
RF
RF
Defined manufacture
source
Green compound
PACKAGE OUTLINE DIMENSIONS
Unit(mm)
Unit(inch)
DIM.
Min
2.70
1.10
0.30
1.78
2.10
0.89
Max
3.10
1.50
0.51
2.04
2.64
1.30
Min
0.106
0.043
0.012
0.070
0.083
0.035
Max
0.122
0.059
0.020
0.080
0.104
0.051
A
B
C
D
E
F
0.55 REF
0.022 REF
G
H
0.10 REF
0.004 REF
SUGGEST PAD LAYOUT
Unit (mm)
TYP
2.8
Unit (inch)
TYP
DIM
0.11
Z
X
Y
C
E
0.7
0.03
0.9
0.04
1.9
0.07
1.0
0.04
Document Number: DS_S1412034
Version: D14
MMBT3904
Taiwan Semiconductor
Small Signal Product
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_S1412034
Version: D14
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