MMBT3904_10 [DIOTEC]
Surface Mount Si-Epi-Planar Switching Transistors; 表面贴装硅外延平面开关晶体管
| 型号： | MMBT3904_10 |
| 厂家： | 
DIOTEC SEMICONDUCTOR |
| 描述： | Surface Mount Si-Epi-Planar Switching Transistors |
| 文件： | 总2页 (文件大小：97K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT3904
MMBT3904
Surface Mount Si-Epi-Planar Switching Transistors
Si-Epi-Planar Schalttransistoren für die Oberflächenmontage
NPN
NPN
Version 2010-04-14
Power dissipation – Verlustleistung
250 mW
2.9±0.1
1.1
Plastic case
Kunststoffgehäuse
SOT-23
(TO-236)
0.4
3
Type
Code
Weight approx. – Gewicht ca.
0.01 g
1
2
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
1.9
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Dimensions - Maße [mm]
1 = B 2 = E 3 = C
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
MMBT3904
40 V
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Collector-Base-voltage – Kollektor-Basis-Spannung
Emitter-Base-voltage – Emitter-Basis-Spannung
Power dissipation – Verlustleistung
B open
E open
C open
VCEO
VCBO
VEBO
Ptot
60 V
6 V
350 mW 1)
Collector current – Kollektorstrom (dc)
IC
200 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhältnis 2)
IC = 0.1 mA, VCE = 1 V
hFE
hFE
hFE
hFE
hFE
40
80
100
60
–
–
–
–
–
–
–
300
–
IC = 1 mA,
VCE = 1 V
IC = 10 mA, VCE = 1 V
IC = 50 mA, VCE = 1 V
IC = 100 mA, VCE = 1 V
30
–
h-Parameters at/bei VCE = 10 V, IC = 1 mA, f = 1 kHz
Small signal current gain – Kleinsignal-Stromverstärkung
Input impedance – Eingangs-Impedanz
hfe
hie
hoe
hre
100
1 kΩ
–
–
–
–
400
10 kΩ
40 µS
8*10-4
Output admittance – Ausgangs-Leitwert
1 µS
Reverse voltage transfer ratio – Spannungsrückwirkung
0.5*10-4
1
2
Valid, if leads are kept at ambient temperature
Gültig, wenn die Anschlüsse auf Umgebungstemperatur gehalten werden
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
MMBT3904
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
VCEsat
VCEsat
–
–
–
–
0.2 V
0.3 V
Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
VBEsat
VBEsat
0.65 V
–
–
–
0.85 V
0.95 V
Collector-Base cutoff current – Kollektor-Basis-Reststrom
VCE = 30 V, VEB = 3 V
ICBX
IEBV
fT
–
–
–-
–
50 nA
50 nA
–
Emitter-Base cutoff current – Emitter-Basis-Reststrom
- VCE = 30 V, - VEB = 3 V
–
Gain-Bandwidth Product – Transitfrequenz
IC = 10 mA, VCE = 20 V, f = 100 MHz
300 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 5 V, IE = ie = 0, f = 1 MHz
CCBO
CEBO
F
–
–
–
–
4 pF
8 pf
5 dB
Emitter-Base Capacitance – Emitter-Basis-Kapazität
VEB = 0.5 V, IC = ic = 0, f = 1 MHz
–
Noise figure – Rauschzahl
VCE = 5 V, IC = 1 µA, RG = 1 kΩ, f = 1 kHz
Switching times – Schaltzeiten (between 10% and 90% levels)
–
delay time
td
tr
ts
tf
–
–
–
–
–
–
–
–
35 ns
35 ns
200 ns
50 ns
VCC = 3 V, VBE = 0.5 V
IC = 10 mA, IB1 = 1mA
rise time
storage time
VCC = 3 V, IC = 10 mA,
IB1 = IB2 = 1 mA
fall time
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
< 357 K/W 1)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
MMBT3906
Marking - Stempelung
MMBT3904 = 1AM or 1E
2
1
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
Valid, if leads are kept at ambient temperature
Gültig, wenn die Anschlüsse auf Umgebungstemperatur gehalten werden
2
http://www.diotec.com/
© Diotec Semiconductor AG
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