MMBT3904_11 [UTC]
GENERAL PURPOSE APPLIATION; 通用蒋云良
| 型号： | MMBT3904_11 |
| 厂家： | 
Unisonic Technologies |
| 描述： | GENERAL PURPOSE APPLIATION |
| 文件： | 总3页 (文件大小：150K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
MMBT3904
NPN EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE
APPLIATION
FEATURES
* Collector-Emitter Voltage: VCEO=40V
* Collector Dissipation: D(MAX)=350mW
* Complementary to UTC MMBT3906
P
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
E
E
E
2
B
B
B
3
C
C
C
MMBT3904L-AE3-R
MMBT3904L-AL3-R
MMBT3904L-AN3-R
MMBT3904G-AE3-R
MMBT3904G-AL3-R
MMBT3904G-AN3-R
SOT-23
SOT-323
SOT-523
Tape Reel
Tape Reel
Tape Reel
MARKING
1A.
L: Lead Free
G: Halogen Free
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 3
QW-R206-012.F
MMBT3904
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING ( TA=25°С, unless otherwise specified )
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
60
40
V
6
V
200
mA
mW
°С
°С
Collector Dissipation
Junction Temperature
Storage Temperature
PC
350
TJ
+150
-55 ~ +150
TSTG
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
VCBO IC=10μA, IE=0
VCEO IC=1mA, IB=0 (Note)
VEBO IE=10μA, IC=0
60
40
6
V
V
V
VCE(SAT)1 IC=10mA, IB=1mA
VCE(SAT)2 IC=50mA, IB=5mA
VBE(SAT)1 IC=10mA, IB=1mA
VBE(SAT)2 IC=50mA, IB=5mA
0.2
0.3
V
Collector-Emitter Saturation Voltage (Note)
Base-Emitter Saturation Voltage (Note)
V
0.65
0.85
0.95
50
V
V
Collector Cut-Off Current
Base Cut-Off Current
ICEX
IBL
VCE=30V, VEB=3V
nA
nA
VCE=30V, VEB=3V
50
hFE1
hFE2
hFE3
hFE4
hFE5
fT
VCE=1V, IC=0.1mA
40
70
VCE=1V, IC=1mA
DC Current Gain (Note)
VCE=1V, IC=10mA
100
60
300
VCE=1V, IC=50mA
VCE=1V, IC=100mA
VCE=20V, IC=10mA, f=100MHz
VCB=5V, IE=0, f=1MHz
VCC=3V,VBE=0.5V,IC=10mA,IB1=1mA
IB1=1B2=1mA
30
Current Gain Bandwidth Product
Output Capacitance
Turn On Time
300
MHz
pF
COB
tON
4
70
ns
Turn Off Time
tOFF
250 ns
Note: Pulse test: PW<=300μs, Duty Cycle<=2%
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R206-012.F
www.unisonic.com.tw
MMBT3904
NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Output Capacitance
10
6
5
3
IC=10 IB
IE=0
f=1MHz
5
4
VBE(sat)
1
0.5
0.3
3
0.1
2
1
0
VCE(sat)
0.05
0.03
0.01
1
3
5
10
30 50 100
0.1 0.3 0.5 1
3 5 10 3050100
Collector-Base Voltage, VCB (V)
Collector current, IC (mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R206-012.F
www.unisonic.com.tw
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