MMBT3904_10 [TSC]
300mW, NPN Small Signal Transistor; 300MW, NPN小信号晶体管型号: | MMBT3904_10 |
厂家: | TAIWAN SEMICONDUCTOR COMPANY, LTD |
描述: | 300mW, NPN Small Signal Transistor |
文件: | 总3页 (文件大小:271K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MMBT3904
300mW, NPN Small Signal Transistor
Small Signal Transistor
SOT-23
3 Collector
A
F
2 Emitter
1 Base
B
E
Features
Epitaxial planar die construction
Surface device type mounting
Moisture sensitivity level 1
C
G
D
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Unit (mm)
Unit (inch)
Dimensions
Min
2.80
1.20
0.30
1.80
2.25
0.90
Max
Min
Max
Mechanical Data
Case : SOT- 23 small outline plastic package
A
B
C
D
E
F
3.00 0.110 0.118
1.40 0.047 0.055
0.50 0.012 0.020
2.00 0.071 0.079
2.55 0.089 0.100
1.20 0.035 0.043
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed: 260°C/10s
Weight : 0.008gram (approximately)
Marking Code : 1AM
G
0.550 REF
0.022 REF
Ordering Information
Suggested PAD Layout
0.95
Part No.
MMBT3904 RF
MMBT3904 RFG
Package
SOT-23
SOT-23
Packing
Marking
1AM
0.037
3K / 7" Reel
3K / 7" Reel
1AM
2.0
0.079
0.9
0.035
0.8
0.031
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Symbol
Value
Units
mW
V
Power Dissipation
PD
VCBO
VCEO
VEBO
IC
300
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
60
40
V
5
V
200
mA
°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to + 150
Notes:1. Valid provided that electrodes are kept at ambient temperature
Version : B10
MMBT3904
300mW, NPN Small Signal Transistor
Small Signal Transistor
Electrical Characteristics
Type Number
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Min
Max
-
Units
V
IC= 10μA
IC= 1mA
IE= 10μA
IE= 0
60
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
IB= 0
40
-
V
IC= 0
6
-
V
VCB= 60V
VCE= 30V
VEB= 5V
IE= 0
-
0.1
50
0.1
400
-
μA
nA
μA
VBE(OFF)= 3V
IC= 0
ICEO
Collector Cut-off Current
-
IEBO
Emitter Cut-offCurrent
-
VCE= 1V
VCE= 1V
VCE= 1V
IC= 50mA
IC= 50mA
IC= 10mA
IC= 10mA
IC= 50mA
IC= 100mA
IB= 5mA
IB= 5mA
f= 100MHz
100
hFE
DC current gain
60
30
-
VCE(sat)
-
0.3
0.95
-
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
V
V
VBE(sat)
-
fT
td
tr
Transition frequency
Delay time
V
V
V
V
V
CE= 20V
250
MHz
nS
nS
nS
nS
CC=3V VBE=0.5V IC=10mA IB1=1.0mA
CC=3V VBE=0.5V IC=10mA IB1=1.0mA
CC=3V IC=10mA IB1=IB2=1.0mA
-
-
-
-
35
35
200
50
Rise time
ts
tf
Storage time
Fall time
CC=3V IC=10mA IB1=IB2=1.0mA
Tape & Reel specification
TSC label
Item
Symbol
Dimension(mm)
3.15 ±0.10
2.77 ±0.10
1.22 ±0.10
1.50 ± 0.10
178 ± 1
A
B
Carrier width
Top Cover Tape
Carrier length
C
Carrier depth
d
Sprocket hole
Carieer Tape
D
Reel outside diameter
Reel inner diameter
Feed hole width
Sprocke hole position
Punch hole position
Sprocke hole pitch
Embossment center
Overall tape thickness
Tape width
D1
D2
E
55 Min
Any Additional Label (If Required)
13.0 ± 0.20
1.75 ±0.10
3.50 ±0.05
4.00 ±0.10
2.00 ±0.05
0.229 ±0.013
8.10 ±0.20
12.30 ±0.20
P0
d
P1
F
T
E
P0
P1
T
A
F
W
C
B
W
W1
Reel width
W1
D
D2
D1
Direction of Feed
Version : B10
MMBT3904
300mW, NPN Small Signal Transistor
Small Signal Transistor
Rating and Characteristic Curves
Typical Pulsed Current Gain
Collector-Emitter Saturation
Voltage vs Collector Current
vs Collector Current
500
V CE = 5V
0.15
β = 10
400
300
200
100
0
125 °C
125 °C
0.1
25 °C
25 °C
0.05
- 40 °C
- 40 °C
0.1
1
10
100
0.1
1
10
1 00
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Base-Emitter Saturation
Voltage vs Collector Current
Base-Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
V
= 5V
β
= 10
1
CE
- 40 °C
- 40 °C
25 °C
0.8
0.6
0.4
25 °C
125 °C
125 °C
0.1
1
10
100
0.1
1
10
100
I C - COLLECTOR CURRENT (mA)
C
I
- COLLECTOR CURRENT (mA)
Capacitance vs
Reverse Bias Voltage
Collector-Cutoff Current
vs Ambient Temperature
10
500
f = 1.0 MHz
VCB= 30V
100
10
1
5
4
C
ibo
3
2
C
0.1
obo
1
0.1
25
50
75
100
125
150
1
10
100
°
TA - AMBIENT TEMPERATURE ( C)
REVERSE BIAS VOLTAGE (V)
Version : B10
相关型号:
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