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ATF-25170 [AGILENT]

0.5-10 GHz Low Noise Gallium Arsenide FET; 0.5〜10 GHz的低噪声砷化镓场效应管
ATF-25170
型号： ATF-25170
厂家： AGILENT TECHNOLOGIES, LTD.    AGILENT TECHNOLOGIES, LTD.
描述：

0.5-10 GHz Low Noise Gallium Arsenide FET
0.5〜10 GHz的低噪声砷化镓场效应管

晶体 晶体管 放大器
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0.5–10 GHz Low Noise  
Gallium Arsenide FET  
Technical Data  
ATF-25170  
housed in a hermetic, high reliabil-  
Features  
70 mil Package  
ity package. Its noise figure makes  
this device appropriate for use in  
low noise amplifiers operating in  
the0.5-10GHzfrequencyrange.  
• Low Noise Figure:  
0.8 dBTypicalat4 GHz  
• High Associated Gain:  
14.0 dBTypicalat4 GHz  
• High Output Power:  
This GaAs FET device has a  
nominal 0.3 micron gate length  
using airbridge interconnects  
between drain fingers. Total gate  
periphery is 500 microns. Proven  
gold based metallization systems  
and nitride passivation assure a  
rugged, reliable device.  
21.0 dBmTypicalP 1dB at4 GHz  
• Hermetic Gold-Ceramic  
Microstrip Package  
Description  
The ATF-25170 is a high perfor-  
mance gallium arsenide Schottky-  
barrier-gate field effect transistor  
Electrical Specifications, TA = 25°C  
Symbol  
Parameters and Test Conditions  
Units Min. Typ. Max.  
NFO  
Optimum Noise Figure: VDS = 3 V, IDS = 20 mA  
f=4.0GHz  
f=60GHz  
f=8.0GHz  
dB  
dB  
dB  
0.8  
1.0  
1.2  
1.0  
GA  
Gain@NFO:VDS =3V, IDS = 20 mA  
f=4.0GHz  
f=6.0GHz  
f=8.0GHz  
dB  
dB  
dB  
13.0  
14.0  
11.5  
9.0  
P1 dB  
Power Output @ 1 dB Gain Compression:  
VDS =5V,IDS =50mA  
f=4.0GHz dBm  
21.0  
G1 dB  
gm  
1 dB Compressed Gain: VDS =5 V, IDS =50 mA  
Transconductance: VDS = 3 V, VGS = 0 V  
Saturated Drain Current: VDS =3 V, VGS = 0 V  
Pinch-off Voltage: VDS = 3 V, IDS = 1 mA  
f=4.0GHz  
dB  
mmho 50  
15.0  
80  
IDSS  
VP  
mA  
V
50  
100  
-2.0  
150  
-0.8  
-3.0  
5965-8712E  
5-57  
ATF-25170 Absolute Maximum Ratings  
Notes:  
Absolute  
Maximum[1]  
+7  
1. Permanent damage may occur if  
any of these limits are exceeded.  
2. TMOUNTING SURFACE = 25°C.  
3. Derate at 3.3 mW/°C for  
TMOUNTINGSURFACE>40°C.  
4. The small spot size of this tech-  
nique results in a higher, though  
more accurate determination of θjc  
than do alternate methods. See  
MEASUREMENTS section for  
more information.  
Symbol  
VDS  
VGS  
VGD  
IDS  
PT  
TCH  
TSTG  
Parameter  
Units  
V
Drain-Source Voltage  
Gate-Source Voltage  
Gate-Drain Voltage  
Drain Current  
Power Dissipation[2,3]  
Channel Temperature  
Storage Temperature  
V
V
mA  
mW  
°C  
-4  
-8  
IDSS  
450  
175  
°C  
-65to+175  
Thermal Resistance:  
Liquid Crystal Measurement:  
θjc =300°C/W;TCH=150°C  
1 µmSpotSize[4]  
ATF-25170 Noise Parameters: VDS = 3 V, IDS = 20 mA  
Γopt  
Freq.  
GHz  
NFO  
dB  
RN/50  
Mag  
Ang  
1.0  
2.0  
4.0  
6.0  
8.0  
0.6  
0.7  
0.8  
1.0  
1.2  
.89  
.77  
.63  
.66  
.62  
24  
50  
105  
147  
-159  
.78  
.53  
.33  
.06  
.11  
ATF-25170 Typical Performance, TA = 25°C  
16  
14  
12  
10  
25  
18  
15  
12  
9
G
A
20  
15  
10  
5
MSG  
G
A
2.0  
1.5  
1.0  
0.5  
0
MAG  
1.5  
2
|
|S  
21  
6
NF  
O
1.0  
0.5  
0
NF  
O
0
0.5  
2.0  
4.0  
6.0  
8.0 10.0 12.0  
1.0  
2.0  
4.0  
6.0 8.0  
12.0  
0
10  
20  
30  
40  
50  
60  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
I
(mA)  
DS  
Figure 1. Insertion Power Gain,  
Maximum Available Gain and  
Figure 2. Optimum Noise Figure and  
Associated Gain vs. Frequency.  
VDS = 3V, IDS = 20 mA.  
Figure 3. Optimum Noise Figure and  
Associated Gain vs. IDS  
VDS = 3V, f = 4.0 GHz.  
.
Maximum Stable Gain vs. Frequency.  
DS = 3 V, IDS = 20 mA.  
V
5-58  
Typical Scattering Parameters, Common Emitter, ZO = 50 Ω,TA = 25°C, VDS = 3V,IDS = 20mA  
Freq.  
GHz  
S11  
Ang.  
S21  
Mag.  
S12  
Mag.  
S22  
Mag.  
dB  
Ang.  
dB  
Ang.  
Mag.  
Ang.  
0.5  
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
7.0  
8.0  
.98  
.96  
.88  
.80  
.77  
.71  
.65  
.60  
.56  
.56  
.55  
.53  
.53  
-23  
-38  
-66  
13.6  
13.0  
11.5  
10.2  
9.3  
8.5  
7.9  
7.3  
6.8  
6.2  
5.4  
4.9  
4.7  
4.80  
4.46  
3.75  
3.23  
2.93  
2.66  
2.47  
2.33  
2.20  
2.05  
1.87  
1.76  
1.71  
160  
147  
121  
102  
82  
62  
42  
24  
5
-14  
-31  
-46  
-62  
-32.8  
-23.6  
-23.6  
-21.8  
-19.7  
-18.6  
-17.7  
-16.5  
-15.8  
-15.1  
-15.0  
-14.9  
-14.8  
.023  
.037  
.066  
.081  
.103  
.118  
.130  
.149  
.162  
.175  
.178  
.180  
.183  
76  
67  
50  
41  
28  
17  
6
.50  
.48  
.44  
.41  
.38  
.35  
.30  
.26  
.22  
.21  
.21  
.22  
.23  
-23  
-30  
-45  
-55  
-65  
-78  
-93  
-111  
-134  
-166  
173  
164  
159  
-86  
-106  
-127  
-149  
-173  
161  
136  
118  
108  
95  
-4  
-16  
-26  
-35  
-42  
-52  
9.0  
10.0  
11.0  
12.0  
A model for this device is available in the DEVICE MODELS section.  
70 mil Package Dimensions  
.040  
1.02  
SOURCE  
4
.020  
.508  
GATE  
DRAIN  
3
1
Notes:  
(unless otherwise specified)  
2
SOURCE  
in  
1. Dimensions are  
mm  
2. Tolerances  
in .xxx = ± 0.005  
mm .xx = ± 0.13  
.070  
1.70  
.004 ± .002  
.10 ± .05  
.495 ± .030  
12.57 ± .76  
.035  
.89  
5-59  

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