ATF-25735 [AGILENT]
0.5-10 GHz General Purpose Gallium Arsenide FET; 0.5〜10 GHz的通用砷化镓场效应管
| 型号： | ATF-25735 |
| 厂家： | 
AGILENT TECHNOLOGIES, LTD. |
| 描述： | 0.5-10 GHz General Purpose Gallium Arsenide FET |
| 文件： | 总4页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
0.5–10 GHz General Purpose
Gallium Arsenide FET
Technical Data
ATF-25735
microstrip package. This device is
Features
35 micro-X Package
designed for use in general
purpose amplifier and oscillator
applications in the 0.5-10 GHz
frequency range.
• High Output Power:
19.0 BmTypicalP 1dB at4 GHz
• High Gain:
12.5 dBTypicalG 1dB at4GHz
• Low Noise Figure:
This GaAs FET device has a
nominal 0.3 micron gate length
using airbridge interconnects
between drain fingers. Total gate
periphery is 500 microns. Proven
gold based metallization systems
and nitride passivation assure a
rugged, reliable device.
1.2 dB Typical at 4 GHz
• Cost Effective Ceramic
Microstrip Package
Description
The ATF-25735 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
housed in a cost effective
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
Units Min. Typ. Max.
NFO
Optimum Noise Figure: VDS = 3 V, IDS = 20 mA
f=2. 0GHz dB
f=4.0GHz
f=6.0GHz
1.0
1.2
1.4
1.5
GA
Gain @ NFO: VDS = 3 V, IDS = 20 mA
f=2.0GHz
f=4.0GHz
f=.6.0GHz
dB
15.0
13.0
10.5
11.5
P1 dB
Power Output @ 1 dB Gain Compression:
VDS =5V,IDS =50mA
f=4.0GHz dBm
19.0
G1 dB
gm
1 dB Compressed Gain: VDS = 5 V, IDS =50 mA
Transconductance: VDS =3 V, VGS = 0 V
Saturated Drain Current: VDS =3 V, VGS = 0 V
Pinch-off Voltage: VDS = 3 V, IDS = 1 mA
f=4.0GHz
dB
mmho 50
12.5
80
IDSS
VP
mA
V
50
100
-2.0
150
-0.8
-3.0
5965-8710E
5-63
ATF-25735 Absolute Maximum Ratings
Notes:
Absolute
Maximum[1]
+7
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE TEMPERATURE = 25°C.
3. Derate at 3 mW/°C for
TCASE >29°C.
4. Storage above +150°C may tarnish
the leads of this package difficult to
solder into a circuit. After a device
has been soldered into a circuit, it
may be safely stored up to 175°C.
Symbol
VDS
VGS
VGD
IDS
PT
TCH
TSTG
Parameter
Units
V
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
Power Dissipation[2,3]
Channel Temperature
StorageTemperature[4]
V
V
mA
mW
°C
-4
-8
IDSS
450
175
°C
-65to+175
5. The small spot size of this tech-
nique results in a higher, though
more accurate determination of θjc
than do alternate methods. See
MEASUREMENTS section for
more information.
Thermal Resistance:
Liquid Crystal Measurement:
θjc =325°C/W;TCH=150°C
1 µmSpotSize[5[
ATF-25735 Typical Performance, TA = 25°C
25
20
15
10
5
25
20
15
10
5
MSG
MSG
MAG
MSG
2
|S |
21
2
|S |
21
MAG
0
0
0.5
1.0
2.0
4.0 6.0 8.0 12.0
0.5
1.0
2.0
4.0 6.0 8.0 12.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 1. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 3 V, IDS = 20 mA.
Figure 2. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 5 V, IDS = 50 mA.
5-64
Typical Scattering Parameters, Common Emitter, ZO = 50 Ω,TA = 25°C, VDS = 3V,IDS = 20mA
Freq.
GHz
S11
S21
Mag.
S12
Mag.
S22
Mag.
Ang.
dB
Ang.
dB
Ang.
Mag.
Ang.
0.5
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
.98
.94
.85
.70
.58
.50
.52
.59
.65
.69
.73
.79
.84
-22
-45
-82
-116
-152
165
122
90
66
44
32
20
13.9
13.3
12.2
11.0
10.0
8.9
7.7
6.3
5.1
3.8
4.95
4.61
4.06
3.54
3.17
2.78
2.43
2.06
1.79
1.55
1.36
1.14
.98
159
142
110
81
54
27
-32.0
-27.1
-21.6
-19.3
-17.7
-16.7
-16.1
-15.8
-15.5
-15.3
-15.4
-15.5
-15.7
.025
.044
.083
.109
.131
.146
.156
.162
.167
.172
.170
.168
.161
77
64
45
24
12
.52
.52
.46
.38
.35
.29
.18
.07
.09
.15
.18
.21
.26
-12
-20
-41
-61
-81
-97
-112
-161
107
76
-7
1
-20
-34
-46
-53
-65
-78
-93
-23
-43
-63
-82
-100
-119
9.0
10.0
11.0
12.0
2.7
1.1
-0.2
53
24
-5
7
Typical Scattering Parameters, Common Emitter, ZO = 50 Ω,TA = 25°C, VDS = 5V,IDS = 50mA
Freq.
GHz
S11
S21
Mag.
S12
Mag.
S22
Mag.
Ang.
dB
Ang.
dB
Ang.
Mag.
Ang.
0.5
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
.93
.88
.78
.65
.55
.48
.47
.56
.65
.73
.78
.80
.85
-21
-42
-81
-112
-142
-176
142
104
80
61
47
34
18
16.0
15.4
14.1
12.6
11.4
10.6
9.7
8.4
7.0
5.8
4.7
6.29
5.89
5.08
4.27
3.73
3.37
3.04
2.64
2.25
1.94
1.71
1.51
1.36
156
140
108
83
58
36
-34.0
-29.6
-24.4
-22.6
-21.0
-19.7
-18.3
-17.5
-16.7
-16.1
-15.4
-15.1
-14.8
.020
.033
.060
.074
.089
.104
.122
.134
.146
.157
.169
.176
.181
69
62
49
39
28
20
6
.56
.53
.47
.44
.41
.37
.28
.14
.07
.14
.20
.27
.36
-10
-21
-43
-55
-64
-69
-83
-105
172
113
94
10
-14
-35
-53
-72
-90
-109
-6
-17
-26
-40
-53
-64
9.0
10.0
11.0
12.0
3.6
2.7
68
45
A model for this device is available in the DEVICE MODELS section.
5-65
35 micro-X Package Dimensions
4
SOURCE
.085
2.15
.083
2.11
DIA.
GATE
1
DRAIN
3
.020
.508
2
SOURCE
Notes:
(unless otherwise specified)
in
mm
1. Dimensions are
2. Tolerances
.057 ± .010
1.45 ± .25
.100
2.54
in .xxx = ± 0.005
mm .xx = ± 0.13
.022
.56
.455 ± .030
11.54 ± .76
.006 ± .002
.15 ± .05
5-66
相关型号：
ATF-33143-BLKG
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC, SC-70, 4 PIN
AGILENT
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