ATF-25735 [AGILENT]

0.5-10 GHz General Purpose Gallium Arsenide FET; 0.5〜10 GHz的通用砷化镓场效应管
ATF-25735
型号: ATF-25735
厂家: AGILENT TECHNOLOGIES, LTD.    AGILENT TECHNOLOGIES, LTD.
描述:

0.5-10 GHz General Purpose Gallium Arsenide FET
0.5〜10 GHz的通用砷化镓场效应管

文件: 总4页 (文件大小:48K)
中文:  中文翻译
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0.5–10 GHz General Purpose  
Gallium Arsenide FET  
Technical Data  
ATF-25735  
microstrip package. This device is  
Features  
35 micro-X Package  
designed for use in general  
purpose amplifier and oscillator  
applications in the 0.5-10 GHz  
frequency range.  
• High Output Power:  
19.0 BmTypicalP 1dB at4 GHz  
• High Gain:  
12.5 dBTypicalG 1dB at4GHz  
• Low Noise Figure:  
This GaAs FET device has a  
nominal 0.3 micron gate length  
using airbridge interconnects  
between drain fingers. Total gate  
periphery is 500 microns. Proven  
gold based metallization systems  
and nitride passivation assure a  
rugged, reliable device.  
1.2 dB Typical at 4 GHz  
• Cost Effective Ceramic  
Microstrip Package  
Description  
The ATF-25735 is a high perfor-  
mance gallium arsenide Schottky-  
barrier-gate field effect transistor  
housed in a cost effective  
Electrical Specifications, TA = 25°C  
Symbol  
Parameters and Test Conditions  
Units Min. Typ. Max.  
NFO  
Optimum Noise Figure: VDS = 3 V, IDS = 20 mA  
f=2. 0GHz dB  
f=4.0GHz  
f=6.0GHz  
1.0  
1.2  
1.4  
1.5  
GA  
Gain @ NFO: VDS = 3 V, IDS = 20 mA  
f=2.0GHz  
f=4.0GHz  
f=.6.0GHz  
dB  
15.0  
13.0  
10.5  
11.5  
P1 dB  
Power Output @ 1 dB Gain Compression:  
VDS =5V,IDS =50mA  
f=4.0GHz dBm  
19.0  
G1 dB  
gm  
1 dB Compressed Gain: VDS = 5 V, IDS =50 mA  
Transconductance: VDS =3 V, VGS = 0 V  
Saturated Drain Current: VDS =3 V, VGS = 0 V  
Pinch-off Voltage: VDS = 3 V, IDS = 1 mA  
f=4.0GHz  
dB  
mmho 50  
12.5  
80  
IDSS  
VP  
mA  
V
50  
100  
-2.0  
150  
-0.8  
-3.0  
5965-8710E  
5-63  
ATF-25735 Absolute Maximum Ratings  
Notes:  
Absolute  
Maximum[1]  
+7  
1. Permanent damage may occur if  
any of these limits are exceeded.  
2. TCASE TEMPERATURE = 25°C.  
3. Derate at 3 mW/°C for  
TCASE >29°C.  
4. Storage above +150°C may tarnish  
the leads of this package difficult to  
solder into a circuit. After a device  
has been soldered into a circuit, it  
may be safely stored up to 175°C.  
Symbol  
VDS  
VGS  
VGD  
IDS  
PT  
TCH  
TSTG  
Parameter  
Units  
V
Drain-Source Voltage  
Gate-Source Voltage  
Gate-Drain Voltage  
Drain Current  
Power Dissipation[2,3]  
Channel Temperature  
StorageTemperature[4]  
V
V
mA  
mW  
°C  
-4  
-8  
IDSS  
450  
175  
°C  
-65to+175  
5. The small spot size of this tech-  
nique results in a higher, though  
more accurate determination of θjc  
than do alternate methods. See  
MEASUREMENTS section for  
more information.  
Thermal Resistance:  
Liquid Crystal Measurement:  
θjc =325°C/W;TCH=150°C  
1 µmSpotSize[5[  
ATF-25735 Typical Performance, TA = 25°C  
25  
20  
15  
10  
5
25  
20  
15  
10  
5
MSG  
MSG  
MAG  
MSG  
2
|S |  
21  
2
|S |  
21  
MAG  
0
0
0.5  
1.0  
2.0  
4.0 6.0 8.0 12.0  
0.5  
1.0  
2.0  
4.0 6.0 8.0 12.0  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Figure 1. Insertion Power Gain,  
Maximum Available Gain and  
Maximum Stable Gain vs. Frequency.  
VDS = 3 V, IDS = 20 mA.  
Figure 2. Insertion Power Gain,  
Maximum Available Gain and  
Maximum Stable Gain vs. Frequency.  
VDS = 5 V, IDS = 50 mA.  
5-64  
Typical Scattering Parameters, Common Emitter, ZO = 50 ,TA = 25°C, VDS = 3V,IDS = 20mA  
Freq.  
GHz  
S11  
S21  
Mag.  
S12  
Mag.  
S22  
Mag.  
Ang.  
dB  
Ang.  
dB  
Ang.  
Mag.  
Ang.  
0.5  
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
7.0  
8.0  
.98  
.94  
.85  
.70  
.58  
.50  
.52  
.59  
.65  
.69  
.73  
.79  
.84  
-22  
-45  
-82  
-116  
-152  
165  
122  
90  
66  
44  
32  
20  
13.9  
13.3  
12.2  
11.0  
10.0  
8.9  
7.7  
6.3  
5.1  
3.8  
4.95  
4.61  
4.06  
3.54  
3.17  
2.78  
2.43  
2.06  
1.79  
1.55  
1.36  
1.14  
.98  
159  
142  
110  
81  
54  
27  
-32.0  
-27.1  
-21.6  
-19.3  
-17.7  
-16.7  
-16.1  
-15.8  
-15.5  
-15.3  
-15.4  
-15.5  
-15.7  
.025  
.044  
.083  
.109  
.131  
.146  
.156  
.162  
.167  
.172  
.170  
.168  
.161  
77  
64  
45  
24  
12  
.52  
.52  
.46  
.38  
.35  
.29  
.18  
.07  
.09  
.15  
.18  
.21  
.26  
-12  
-20  
-41  
-61  
-81  
-97  
-112  
-161  
107  
76  
-7  
1
-20  
-34  
-46  
-53  
-65  
-78  
-93  
-23  
-43  
-63  
-82  
-100  
-119  
9.0  
10.0  
11.0  
12.0  
2.7  
1.1  
-0.2  
53  
24  
-5  
7
Typical Scattering Parameters, Common Emitter, ZO = 50 ,TA = 25°C, VDS = 5V,IDS = 50mA  
Freq.  
GHz  
S11  
S21  
Mag.  
S12  
Mag.  
S22  
Mag.  
Ang.  
dB  
Ang.  
dB  
Ang.  
Mag.  
Ang.  
0.5  
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
7.0  
8.0  
.93  
.88  
.78  
.65  
.55  
.48  
.47  
.56  
.65  
.73  
.78  
.80  
.85  
-21  
-42  
-81  
-112  
-142  
-176  
142  
104  
80  
61  
47  
34  
18  
16.0  
15.4  
14.1  
12.6  
11.4  
10.6  
9.7  
8.4  
7.0  
5.8  
4.7  
6.29  
5.89  
5.08  
4.27  
3.73  
3.37  
3.04  
2.64  
2.25  
1.94  
1.71  
1.51  
1.36  
156  
140  
108  
83  
58  
36  
-34.0  
-29.6  
-24.4  
-22.6  
-21.0  
-19.7  
-18.3  
-17.5  
-16.7  
-16.1  
-15.4  
-15.1  
-14.8  
.020  
.033  
.060  
.074  
.089  
.104  
.122  
.134  
.146  
.157  
.169  
.176  
.181  
69  
62  
49  
39  
28  
20  
6
.56  
.53  
.47  
.44  
.41  
.37  
.28  
.14  
.07  
.14  
.20  
.27  
.36  
-10  
-21  
-43  
-55  
-64  
-69  
-83  
-105  
172  
113  
94  
10  
-14  
-35  
-53  
-72  
-90  
-109  
-6  
-17  
-26  
-40  
-53  
-64  
9.0  
10.0  
11.0  
12.0  
3.6  
2.7  
68  
45  
A model for this device is available in the DEVICE MODELS section.  
5-65  
35 micro-X Package Dimensions  
4
SOURCE  
.085  
2.15  
.083  
2.11  
DIA.  
GATE  
1
DRAIN  
3
.020  
.508  
2
SOURCE  
Notes:  
(unless otherwise specified)  
in  
mm  
1. Dimensions are  
2. Tolerances  
.057 ± .010  
1.45 ± .25  
.100  
2.54  
in .xxx = ± 0.005  
mm .xx = ± 0.13  
.022  
.56  
.455 ± .030  
11.54 ± .76  
.006 ± .002  
.15 ± .05  
5-66  

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