ATF-33143-BLK [AGILENT]
Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package; 低噪声赝HEMT的表面贴装塑料封装
| 型号： | ATF-33143-BLK |
| 厂家： | 
AGILENT TECHNOLOGIES, LTD. |
| 描述： | Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| 文件： | 总14页 (文件大小：149K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Low Noise Pseudomorphic HEMT
in a Surface Mount Plastic Package
Technical Data
ATF-33143
Features
Surface Mount Package
SOT-343
Description
• Low Noise Figure
Agilent’s ATF-33143 is a high
dynamic range, low noise,
PHEMT housed in a 4-lead SC-70
(SOT-343) surface mount plastic
package.
• Excellent Uniformity in
Product Specifications
• Low Cost Surface Mount
Small Plastic Package
SOT-343 (4 lead SC-70)
Based on its featured perfor-
mance, ATF-33143 is suitable for
applications in cellular and PCS
base stations, LEO systems,
MMDS, and other systems requir-
ing super low noise figure with
good intercept in the 450 MHz to
10 GHz frequency range.
• Tape-and-Reel Packaging
Option Available
Pin Connections and
Package Marking
Specifications
1.9 GHz; 4V, 80 mA (Typ.)
DRAIN
SOURCE
• 0.5 dB Noise Figure
SOURCE
GATE
• 15 dB Associated Gain
• 22 dBm Output Power at
1 dB Gain Compression
• 33.5 dBm Output 3rd Order
Intercept
Note: Top View. Package marking
provides orientation and identification.
“3P” = Device code
“x” = Date code character. A new
character is assigned for each month, year.
Applications
• Low Noise Amplifier and
Driver Amplifier for
Cellular/PCS Base Stations
• LNA for WLAN, WLL/RLL,
LEO, and MMDS
Applications
• General Purpose Discrete
PHEMT for Other Ultra Low
Noise Applications
1
ATF-33143 Absolute Maximum Ratings[1]
Notes:
Absolute
Maximum
1. Operation of this device above any one
of these parameters may cause
permanent damage.
2. Assumes DC quiesent conditions.
3. VGS = 0V
4. Source lead temperature is 25°C.
Derate 6 mW/ °C for TL > 60°C.
5. Please refer to failure rates in reliability
section to assess the reliability impact
of running devices above a channel
temperature of 140°C.
6. Thermal resistance measured using
150°C Liquid Crystal Measurement
method.
Symbol
VDS
Parameter
Units
V
Drain - Source Voltage[2]
Gate - Source Voltage[2]
Gate Drain Voltage[2]
Drain Current[2]
5.5
-5
VGS
V
VGD
V
-5
[3]
IDS
mA
mW
dBm
°C
Idss
Pdiss
Pin max
TCH
Total Power Dissipation[4]
600
20
RF Input Power
Channel Temperature[5]
Storage Temperature
Thermal Resistance[6]
160
TSTG
θjc
°C
-65 to 160
145
°C/W
Product Consistency Distribution Charts[8, 9]
500
400
300
200
100
120
Cpk = 1.7
+0.6 V
Std = 0.05
100
80
0 V
+3 Std
-3 Std
60
40
20
0
–0.6 V
0
0
2
4
6
8
0.2
0.3
0.4
0.5
0.6
0.7 0.8
V
(V)
DS
NF (dB)
[7]
Figure 1. Typical Pulsed I-V Curves
(VGS = -0.2 V per step)
.
Figure 2. NF @ 2 GHz, 4 V, 80 mA.
LSL=0.2, Nominal=0.53, USL=0.8
100
80
120
Cpk = 1.21
Std = 0.94
Cpk = 2.3
Std = 0.2
100
80
60
40
20
0
60
-3 Std
+3 Std
-3 Std
+3 Std
40
20
0
31
33
35
29
37
13
14
15
GAIN (dB)
16
17
OIP3 (dBm)
Figure 3. OIP3 @ 2 GHz, 4 V, 80 mA.
LSL=30.0, Nominal=33.3, USL=37.0
Figure 4. Gain @ 2 GHz, 4 V, 80 mA.
LSL=13.5, Nominal=14.8, USL=16.5
Notes:
7. Under large signal conditions, VGS may
Future wafers allocated to this product
may have nominal values anywhere
within the upper and lower spec limits.
9. Measurements made on production test
board. This circuit represents a trade-off
between an optimal noise match and a
realizeable match based on production
test requirements. Circuit losses have
been de-embedded from actual
measurements.
swing positive and the drain current may
exceed Idss. These conditions are
acceptable as long as the maximum Pdiss
and Pin max ratings are not exceeded.
8. Distribution data sample size is 450
samples taken from 9 different wafers.
10. The probability of a parameter being
between ±1σ is 68.3%, between ±2σ is
95.4% and between ±3σ is 99.7%.
2
ATF-33143 DC Electrical Specifications
TA = 25°C, RF parameters measured in a test circuit for a typical device
Symbol
Parameters and Test Conditions
Saturated Drain Current VDS = 1.5 V, VGS = 0 V mA 175 237
Units Min. Typ.[2] Max.
[1]
Idss
305
[1]
VP
Pinchoff Voltage
VDS = 1.5 V, IDS = 10% of Idss
VGS = -0.5 V, VDS = 4 V mA
VDS = 1.5 V, gm = Idss /VP mmho 360 440
V
-0.65 -0.5 -0.35
Id
Quiescent Bias Current
Transconductance
—
80
—
—
[1]
gm
IGDO
Igss
Gate to Drain Leakage Current
Gate Leakage Current
VGD = 5 V
µA
µA
dB
1000
600
0.8
VGD = VGS = -4 V
—
42
f = 2 GHz VDS = 4 V, IDS = 80 mA
VDS = 4 V, IDS = 60 mA
0.5
0.5
NF
Ga
Noise Figure
f = 900 MHz VDS = 4 V, IDS = 80 mA
VDS = 4 V, IDS = 60 mA
dB
0.4
0.4
f = 2 GHz VDS = 4 V, IDS = 80 mA
VDS = 4 V, IDS = 60 mA
dB 13.5
dB
15
15
16.5
Associated Gain[3]
f = 900 MHz VDS = 4 V, IDS = 80 mA
VDS = 4 V, IDS = 60 mA
21
21
f = 2 GHz VDS = 4 V, IDS = 80 mA dBm 30
5 dBm Pout/Tone VDS = 4 V, IDS = 60 mA
33.5
32
Output 3rd Order
Intercept Point[3]
OIP3
P1dB
f = 900 MHz VDS = 4 V, IDS = 80 mA dBm
5 dBm Pout/Tone VDS = 4 V, IDS = 60 mA
32.5
31
f = 2 GHz VDS = 4 V, IDS = 80 mA dBm
VDS = 4 V, IDS = 60 mA
22
21
1 dB Compressed
Compressed Power[3]
f = 900 MHz VDS = 4 V, IDS = 80 mA dBm
VDS = 4 V, IDS = 60 mA
21
20
Notes:
1. Guaranteed at wafer probe level.
2. Typical value determined from a sample size of 450 parts from 9 wafers.
3. Measurements obtained using production test board described in Figure 5.
50 Ohm
Input
50 Ohm
Input
Output
Transmission
Line Including
Gate Bias T
(0.5 dB loss)
Matching Circuit
Γ_mag = 0.20
Γ_ang = 124°
(0.3 dB loss)
Transmission
Line Including
Drain Bias T
(0.5 dB loss)
DUT
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measure-
ments. This circuit represents a trade-off between an optimal noise match and a realizable match based on production test
requirements. Circuit losses have been de-embedded from actual measurements.
3
ATF-33143 Typical Performance Curves
40
30
20
10
0
40
30
20
10
0
2 V
3 V
4 V
2 V
3 V
4 V
0
20
40
60
(mA)
80
100 120
0
20
40
60
(mA)
80
100 120
I
I
DSQ
DSQ
Figure 6. OIP3, IIP3 vs. Bias[1] at
2GHz.
Figure 7. OIP3, IIP3 vs. Bias[1] at
900 MHz.
25
20
15
10
25
20
15
10
2 V
3 V
4 V
2 V
3 V
4 V
5
0
5
0
0
20
40
60
(mA)
80
100 120
0
20
40
60
(mA)
80
100 120
I
I
DSQ
DSQ
Figure 8. P1dB vs. Bias[1,2] at 2 GHz.
Figure 9. P1dB vs. Bias[1,2] Tuned for NF
@ 4V, 80mA at 900MHz.
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.2
1.0
0.8
0.6
0.4
0.2
0
16
15
22
21
20
19
18
17
16
G
a
14
13
12
11
10
G
a
NF
NF
2 V
3 V
4 V
2 V
3 V
4 V
0
20
40
60
(mA)
80
100 120
0
20
40
60
(mA)
80
100 120
I
I
DSQ
DSQ
Figure 10. NF and Ga vs. Bias[1] at
2GHz.
Figure 11. NF and Ga vs. Bias[1] at
900 MHz.
Notes:
1. Measurements made on a fixed tuned production test board that was tuned for optimal gain match with reasonable noise figure at 4V
80 mA bias. This circuit represents a trade-off between optimal noise match, maximum gain match and a realizable match based on
production test board requirements. Circuit losses have been de-embedded from actual measurements.
2. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease
depending on frequency and dc bias point. At lower values of IDSQ the device is running closer to class B as power output approaches
P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant
current source as is typically done with active biasing.
4
ATF-33143 Typical Performance Curves, continued
1.5
1.0
0.5
0
30
25
20
15
10
5
80 mA
60 mA
80 mA
60 mA
0
0
2
4
6
8
10
0
2
4
6
8
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 12. Fmin vs. Frequency and
Current at 4V.
Figure 13. Associated Gain vs.
Frequency and Current at 4V.
40
35
30
25
20
15
25
2.0
1.5
1.0
0.5
0
25°C
-40°C
85°C
25°C
-40°C
85°C
20
15
10
5
0
2000
4000
6000
8000
0
2
4
6
8
10
FREQUENCY (MHz)
FREQUENCY (GHz)
Figure 15. P1dB, OIP3 vs. Frequency
and Temp at VDS = 4V, IDS = 80mA.
Figure 14. Fmin and Ga vs. Frequency
and Temp at VDS = 4V, IDS = 80mA.
3.5
35
30
25
20
15
10
5
35
30
25
20
15
10
5
P
3.0
2.5
2.0
1.5
1.0
0.5
0
1dB
3
2
1
0
OIP3
Gain
NF
P
Gain
NF
1dB
OIP3
0
0
0
20
40
60
(mA)
80
100 120
0
20
40
60
(mA)
80
100 120
I
I
DSQ
DSQ
Figure 16. OIP3, P1dB, NF and Gain vs.
Bias[1,2] at 3.9 GHz.
Figure 17. OIP3, P1dB, NF and Gain vs.
Bias[1,2] at 5.8 GHz.
Notes:
1. Measurements made on a fixed tuned test fixture that was tuned for noise figure at 4V 80 mA bias. This circuit represents a trade-off
between optimal noise match, maximum gain match and a realizable match based on production test requirements. Circuit losses have
been de-embedded from actual measurements.
2. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease
depending on frequency and dc bias point. At lower values of Idsq the device is running closer to class B as power output approaches
P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant
current source as is typically done with active biasing.
5
ATF-33143 Typical Performance Curves, continued
25
20
15
10
5
25
20
15
10
5
0
0
0
20
40
60
80
100 120
0
20
40
60
80
100 120
I
(mA)
I
(mA)
DS
DS
Figure 19. P1dB vs. IDS Active Bias[1]
Tuned for NF @ 4 V, 80 mA at 900 MHz.
Figure 18. P1dB vs. IDS Active Bias[1]
Tuned for NF @ 4 V, 80 mA at 2 GHz.
Note:
1. Measurements made on a fixed tuned test board that was tuned for optimal gain match with reasonable noise figure at 4V 80 mA bias.
This circuit represents a trade-off between an optimal noise match, maximum gain match and a realizable match based on production
test board requirements. Circuit losses have been de-embedded from actual measurements.
6
ATF-33143 Power Parameters Tuned for Max P1dB, VDS = 4 V, IDSQ = 80 mA
Freq
(GHz) (dBm)
P1dB
Id
(mA)
G1dB
(dB)
PAE1dB
(%)
P3dB
(dBm)
Id
(mA)
PAE3dB Γ Out_mag Γ Out_ang
(%)
(Mag.)
(°)
0.9
1.5
1.8
2.0
4.0
6.0
20.7
21.2
21.1
21.6
23.0
24.0
89
91
80
81
97
23.2
20.7
19.2
18.1
11.9
5.9
33
36
40
44
48
36
23.2
23.8
23.0
23.2
24.6
25.2
102
116
94
89
135
136
51
51
52
57
48
36
0.39
0.43
0.43
0.42
0.40
0.37
160
165
170
174
-150
-124
130
70
P
Gain
PAE
out
60
50
40
30
20
10
0
-10
-20
-40
-30
-20
-10
0
10
20
P
(dBm)
in
Figure 20. Swept Power Tuned for
Max P
1dB
=4V, I
V
DS
= 80 mA, 2 GHz.
DSQ
Notes:
1. Measurements made on ATN LP1 power load pull system.
2. Quicescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease
depending on frequency and dc bias point. At lower values of IDSQ the device is running closer to class B as power output approaches
P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant
current source as is typically done with active biasing.
3. PAE (%) = ((Pout – Pin) / Pdc) X 100
4. Gamma out is the reflection coefficient of the matching circuit presented to the output of the device.
7
ATF-33143 Typical Scattering Parameters, VDS = 4 V, IDS = 60 mA
Freq.
(GHz) Mag.
S11
S21
S12
S22
Mag.
MSG/MAG
(dB)
Ang.
dB
Mag. Ang.
dB
Mag. Ang.
Ang.
0.5
0.8
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
0.86
0.77
0.76
0.73
0.72
0.72
0.72
0.73
0.74
0.75
0.77
0.79
0.82
0.83
0.86
0.88
0.90
0.91
0.91
0.92
0.93
0.94
0.93
-75.60
23.20 14.45 132.90
20.44 10.53 109.80
-28.18
-25.35
-25.04
-23.61
-22.97
-22.73
-21.94
-21.31
-20.00
-18.86
-17.99
-17.52
-17.39
-17.08
-16.54
-16.48
-16.71
-17.27
-17.65
-17.79
-17.72
-17.92
-18.56
0.039
0.054
0.056
0.066
0.071
0.073
0.080
0.086
0.100
0.114
0.126
0.133 -22.30
0.135 -33.60
0.140 -43.40
0.149 -55.20
0.150 -68.40
0.146 -81.10
0.137 -92.90
0.131 -101.60
0.129 -111.60
0.130 -122.20
0.127 -134.70
0.118 -143.30
54.80
42.20
40.20
33.20
30.60
28.90
25.10
21.60
13.70
3.40
0.26
0.34
0.35
0.39
0.41
0.42
0.45
0.47
0.49
0.50
0.51
0.54
0.57
0.60
0.63
0.66
0.70
0.73
0.76
0.79
0.81
0.82
0.84
-118.50
-150.00
-155.50
-176.10
175.00
169.80
160.60
152.70
139.90
125.70
109.10
91.60
75.90
63.70
52.00
38.50
22.50
6.70
-5.20
25.69
22.90
22.42
20.29
19.26
18.70
17.36
16.25
10.91
9.78
9.03
8.44
7.78
7.42
7.68
7.61
7.44
6.46
-115.00
-122.50
-151.80
-164.60
-171.80
171.00
158.20
136.50
117.00
98.00
80.20
64.70
50.60
36.60
21.80
7.50
-4.80
19.80
16.97
15.54
14.67
12.79
11.18
8.76
6.99
5.47
3.94
2.45
9.77 105.30
7.06
5.99
5.41
4.36
3.62
2.74
2.24
1.88
1.57
1.33
1.16
1.04
0.92
0.80
87.50
79.20
74.20
62.70
53.00
35.20
17.50
-1.00
-19.00
-34.90
-49.10
-64.30
-80.40
-96.20
-8.90
9.0
1.27
0.37
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
-0.72
-1.97
-3.45
-4.69
-5.70
-6.52
-7.51
-8.78
0.67 -110.80
0.58 -122.80
0.52 -135.40
0.47 -148.30
0.42 -162.10
0.36 -172.80
-15.40
-27.30
-40.40
-52.20
-61.20
5.86
5.65
5.65
5.44
-15.20
-25.10
-37.30
-49.20
4.17
ATF-33143 Typical Noise Parameters
VDS = 4 V, IDS = 60 mA
30
Freq.
GHz
Fmin
dB
Γopt
Rn/50
-
Ga
dB
25
Mag.
Ang.
MSG
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.29
0.33
0.34
0.38
0.39
0.42
0.47
0.51
0.63
0.72
0.82
0.93
1.03
1.13
1.22
0.42
0.33
0.32
0.26
0.22
0.22
0.25
0.29
0.39
0.46
0.51
0.57
0.61
0.66
0.69
31.40
44.70
48.00
71.90
94.00
109.70
149.40
166.80
-160.60
-135.30
-112.40
-90.90
-71.80
-55.50
-41.80
0.080
0.070
0.070
0.060
0.050
0.046
0.030
0.030
0.040
0.060
0.110
0.210
0.370
0.550
0.720
25.91
21.80
21.00
18.14
16.96
16.29
14.95
13.58
11.74
10.36
9.17
20
15
10
2
|S
21
|
MAG
5
0
-5
5
10
15
0
20
FREQUENCY (GHz)
Figure 22. MSG/MAG and |S21
Frequency at 4V, 60 mA.
|
2 vs.
8.18
7.19
6.56
6.29
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system.
From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.
8
ATF-33143 Typical Scattering Parameters, VDS = 4 V, IDS = 80 mA
Freq.
(GHz) Mag.
S11
S21
S12
S22
Mag.
MSG/MAG
(dB)
Ang.
dB
Mag. Ang.
dB
Mag. Ang.
Ang.
0.5
0.9
1.0
1.5
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
0.86
0.77
0.76
0.72
0.72
0.72
0.73
0.74
0.75
0.77
0.79
0.82
0.84
0.86
0.88
0.90
0.91
0.91
0.92
0.93
0.94
0.93
-76.90
23.48 14.93 132.10
20.64 10.77 109.10
20.00 10.00 104.80
-28.64
-25.85
-25.51
-24.01
-22.97
-22.27
-21.51
-20.09
-18.86
-17.99
-17.52
-17.33
-17.02
-16.48
-16.42
-16.59
-17.20
-17.59
-17.65
-17.65
-17.86
-18.49
0.037
0.051
0.053
0.063
0.071
0.077
0.084
0.099
0.114
0.126
0.133 -20.60
0.136 -32.00
0.141 -42.10
0.150 -54.00
0.151 -67.30
0.148 -80.20
0.138 -92.00
0.132 -100.80
0.131 -110.80
0.131 -121.50
0.128 -134.00
0.119 -142.90
55.40
43.90
42.10
36.00
32.10
28.10
24.60
16.40
5.70
0.26
0.34
0.35
0.39
0.43
0.45
0.47
0.49
0.50
0.52
0.54
0.57
0.61
0.64
0.67
0.71
0.74
0.76
0.79
0.81
0.82
0.84
-126.60
-155.50
-160.50
-180.00
166.60
158.70
151.20
138.70
124.70
108.30
91.00
75.30
63.10
51.50
38.00
22.00
6.40
-5.60
26.06
23.25
22.76
20.57
18.90
17.62
16.44
10.67
9.78
9.05
8.50
7.88
7.53
7.78
7.72
7.59
6.55
5.97
5.76
5.78
5.57
-115.90
-123.20
-151.70
-171.10
170.10
157.40
135.90
116.60
97.60
80.00
64.50
50.50
36.40
21.60
7.40
-4.90
-15.50
-27.40
-40.50
-52.30
-61.30
17.13
14.82
12.96
11.36
8.92
7.15
5.63
4.09
2.61
7.18
5.51
4.45
3.70
2.79
2.28
1.91
1.60
1.35
1.18
1.06
0.94
0.81
87.40
74.30
62.60
52.90
35.40
17.70
-0.70
-18.60
-34.40
-48.60
-63.70
-79.80
-95.50
-6.90
1.42
0.52
-0.57
-1.81
-3.30
-4.54
-5.51
-6.34
-7.33
-8.61
0.68 -110.00
0.59 -122.00
0.53 -134.50
0.48 -147.40
0.43 -161.20
0.37 -171.90
-15.50
-25.40
-37.60
-49.50
4.30
ATF-33143 Typical Noise Parameters
VDS = 4 V, IDS = 80 mA
30
Freq.
GHz
Fmin
dB
Γopt
Rn/50
-
Ga
dB
25
Mag.
Ang.
MSG
0.5
0.9
1.0
1.5
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.30
0.35
0.36
0.40
0.46
0.52
0.58
0.69
0.80
0.90
1.02
1.12
1.21
1.32
0.40
0.31
0.30
0.23
0.22
0.26
0.29
0.39
0.46
0.52
0.57
0.63
0.66
0.76
28.20
44.10
47.40
0.080
0.070
0.070
0.050
0.050
0.040
0.040
0.044
0.070
0.130
0.250
0.420
0.630
0.830
25.77
21.91
21.14
18.46
16.56
15.23
13.79
11.92
10.53
9.37
20
15
10
2
79.10
|S
21
|
MAG
5
0
117.00
157.70
171.10
-157.20
-132.40
-109.40
-88.80
-70.50
-54.10
-40.40
-5
5
10
15
0
20
FREQUENCY (GHz)
Figure 23. MSG/MAG and |S21
Frequency at 4V, 80 mA.
|
2 vs.
8.33
7.41
6.70
6.69
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system.
From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.
9
presented with Γo. If the reflec-
tion coefficient of the matching
network is other than Γo, then the
noise figure of the device will be
greater than Fmin based on the
following equation.
Typically for FETs, the higher Γo
usually infers that an impedance
much higher than 50Ω is required
for the device to produce Fmin. At
VHF frequencies and even lower
L Band frequencies, the required
impedance can be in the vicinity
of several thousand ohms.
Noise Parameter
Applications Information
Fmin values at 2 GHz and higher
are based on measurements while
the Fmins below 2 GHz have been
extrapolated. The Fmin values are
based on a set of 16 noise figure
measurements made at 16
NF = Fmin + 4 Rn
|Γs – Γo | 2
Zo (|1 + Γo|2)(1–Γs|2)
Matching to such a high imped-
ance requires very hi-Q compo-
nents in order to minimize circuit
losses. As an example at 900 MHz,
when airwwound coils (Q>100)
are used for matching networks,
the loss can still be up to 0.25 dB
which will add directly to the
noise figure of the device. Using
muiltilayer molded inductors with
Qs in the 30 to 50 range results in
additional loss over the airwound
coil. Losses as high as 0.5 dB or
greater add to the typical 0.15 dB
Fmin of the device creating an
amplifier noise figure of nearly
0.65 dB. A discussion concerning
calculated and measured circuit
losses and their effect on ampli-
fier noise figure is covered in
Agilent Application 1085.
different impedances using an
ATN NP5 test system. From these
measurements, a true Fmin is
calculated. Fmin represents the
true minimum noise figure of the
device when the device is pre-
sented with an impedance
matching network that trans-
forms the source impedance,
typically 50Ω, to an impedance
represented by the reflection
coefficient Γo. The designer must
design a matching network that
will present Γo to the device with
minimal associated circuit losses.
The noise figure of the completed
amplifier is equal to the noise
figure of the device plus the
Where Rn/Zo is the normalized
noise resistance, Γo is the opti-
mum reflection coefficient
required to produce Fmin and Γs is
the reflection coefficient of the
source impedance actually
presented to the device. The
losses of the matching networks
are non-zero and they will also
add to the noise figure of the
device creating a higher amplifier
noise figure. The losses of the
matching networks are related to
the Q of the components and
associated printed circuit board
loss. Γo is typically fairly low at
higher frequencies and increases
as frequency is lowered. Larger
gate width devices will typically
have a lower Γo as compared to
narrower gate width devices.
losses of the matching network
preceding the device. The noise
figure of the device is equal to
Fmin only when the device is
Reliability Data
Nominal Failures per million (FPM)
for different durations
90% confidence Failures per million (FPM)
for different durations
Channel
Temperature
(oC)
(FITs) 1 year 5 year 10 year 30 year (FITs) 1 year 5 year 10 year 30 year
1000
1000
hours
hours
100
125
140
150
160
180
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
4400
<0.1
<0.1
<0.1
2
<0.1
<0.1
<0.1
140
<0.1
<0.1
160
<0.1
<0.1
<0.1
<0.1
<0.1
21
<0.1
<0.1
<0.1
0.3
<0.1
<0.1
6
<0.1
<0.1
160
<0.1
11
9.3K
131K
520K
1000K
26K
780
24K
590K
8800
120K
850K
920
450K
21K
830K
370K
1000K
67
53K
NOT
recommended
Predicted failures with temperature extrapolated from failure distribution and activation energy data of
higher temperature operational life STRIFE of PHEMT process
10
ATF-33143 Die Model
Statz Model
MESFETM1
NFET=yes
PFET=no
Vto=–0.95
Beta=0.48
Lambda=0.09
Alpha=4
B=0.8
Tnom=27
Idstc=
Vbi=0.7
Cgs=1.6 pF
Gdcap=3
Cgd=0.32 pF
Rgd=
Tqm=
Vmax=
Fc=
Rd=.125
Rg=1
Rs=0.0625
Ld=0.00375 nH
Lg-0.00375 nH
Ls=0.00125 nH
Cds=0.08 pF
Crf=0.1
Rc=62.5
Gsfwd=1
Gsrev=0
Gdfwd=1
Gdrev=0
Vjr=1
Is=1 nA
Ir=1 nA
Imax=0.1
Xti=
N=
Eg=
Vbr=
Vtotc=
Rin=
Taumd1=no
Fnc=1E6
R=0.17
C=0.2
P=0.65
wVgfwd=
wBvgs=
wBvgd=
wBvds=
wldsmax=
wPmax=
Al lParams=
Tau=
Betatce=
Delta1=0.2
Delta2=
Gscap=3
This model can be used as a
the measured data in this data
sheet. For future improvements
Agilent reserves the right to
change these models without
prior notice.
design tool. It has been tested on
MDS for various specifications.
However, for more precise and
accurate design, please refer to
ATF-33143 Model
INSIDE Package
Var
VIA2
VAR
Ean
V3
VAR1
TLINP
TL1
Z=Z2/2 Ohm
L=20 0 mil
K=K
A=D 0000
F=1 GHz
TanD=0.001
TLINP
TL2
Z=Z2/2 Ohm
L=20 0 mil
K=K
A=0.0000
F=1 GHz
TanD=0.001
D=20.0 mil
H=25.0 mil
T=0.15 mil
Rho=1.0
W=40.0 mil
K=5
Z2=85
Z1=30
C
C1
C=0.1 pF
GATE
SOURCE
L
L
Port
G
Num=1
TLINP
TL7
TLINP
TL8
TLINP
TL4
TLINP
TL3
Port
L6
L1
S2
L=0.2 nH
R=0.001
L=0.6 nH
R=0.001
Z=Z2/2 Ohm Z=Z1 Ohm
VIA2
VIA2
Z=Z1 Ohm Z=Z2 Ohm
Num=4
L=5.0 mil
K=K
A=0.0000
F=1 GHz
L=15 mil
K=1
A=0.0000
F=1 GHz
V1
V4
L=15 mil
K=1
A=0.000
F=1 GHz
L=25 mil
K=K
A=0.000
F=1 GHz
GaAsFET
D=20 mil
H=25.0 mil
T=0.15 mil
Rho=1.0
W=40 mil
D=20.0 mil
H=25.0 mil
T=0.15 mil
Rho=1.0
W=40.0 mil
C
C2
C=0.11 pF
FET1
Model=MESFETN1
Mode=nonlinear
TanD=0.001 TanD=0.001
DRAIN
TanD=0.001 TanD=0.001
SOURCE
L
TLINP
TL5
TLINP
TL6
Port
D
Num=4
L7
C=0.6 nH
R=D 001
L
Port
TLINPTL9
Z=Z2 Ohm
L=10.0 mil
K=K
Z=Z2 Ohm Z=Z1 Ohm
L=26.0 mil L=15 mil
TLINP
L4
MSub
S1
TL10
VIA2
L=0.2 nH
R=0.001
Num=2
K=K
A=0.0000
F=1 GHz
K=1
A=0.0000
F=1 GHz
Z=Z1 Ohm
L=15 mil
K=1
A=0.000
F=1 GHz
TanD=0.001
MSUB
V2
MSub1
H=25.0 mil
Er=9.6
D=20.0 mil
H=25.0 mil
T=0.15 mil
Rho=1.0
W=40.0 mil
A=0.000
F=1 GHz
TanD=0.001
TanD=0.001 TanD=0.001
Mur=1
Cond=1 DE+50
Hu=3.9e+0.34 mil
T=0.15 mil
TanD=D
Rough=D mil
11
Part Number Ordering Information
No. of
Part Number
ATF-33143-TR1
ATF-33143-TR2
ATF-33143-BLK
Devices
Container
7" Reel
3000
10000
100
13" Reel
antistatic bag
Package Dimensions
Outline 43 (SOT-343/SC-70 4 lead)
1.30 (0.051)
BSC
1.30 (.051) REF
2.60 (.102)
E
1.30 (.051)
E1
0.85 (.033)
0.55 (.021) TYP
1.15 (.045) BSC
e
1.15 (.045) REF
D
h
A
A1
b TYP
C TYP
L
θ
DIMENSIONS
SYMBOL
MIN.
MAX.
A
A1
b
0.80 (0.031)
0 (0)
1.00 (0.039)
0.10 (0.004)
0.35 (0.014)
0.20 (0.008)
2.10 (0.083)
2.20 (0.087)
0.65 (0.025)
0.25 (0.010)
0.10 (0.004)
1.90 (0.075)
2.00 (0.079)
0.55 (0.022)
C
D
E
e
h
0.450 TYP (0.018)
E1
L
1.15 (0.045)
0.10 (0.004)
0
1.35 (0.053)
0.35 (0.014)
10
θ
DIMENSIONS ARE IN MILLIMETERS (INCHES)
12
Device Orientation
REEL
TOP VIEW
4 mm
END VIEW
CARRIER
TAPE
8 mm
3Px
3Px
3Px
3Px
USER
FEED
DIRECTION
COVER TAPE
Tape Dimensions
For Outline 4T
P
P
D
2
P
0
E
F
W
C
D
1
t
(CARRIER TAPE THICKNESS)
T (COVER TAPE THICKNESS)
t
1
K
8° MAX.
5° MAX.
0
A
B
0
0
DESCRIPTION
SYMBOL
SIZE (mm)
SIZE (INCHES)
CAVITY
LENGTH
WIDTH
DEPTH
PITCH
A
B
K
P
D
2.24 ± 0.10
2.34 ± 0.10
1.22 ± 0.10
4.00 ± 0.10
1.00 + 0.25
0.088 ± 0.004
0.092 ± 0.004
0.048 ± 0.004
0.157 ± 0.004
0.039 + 0.010
0
0
0
BOTTOM HOLE DIAMETER
1
0
PERFORATION
DIAMETER
PITCH
POSITION
D
P
E
1.55 ± 0.05
4.00 ± 0.10
1.75 ± 0.10
0.061 ± 0.002
0.157 ± 0.004
0.069 ± 0.004
CARRIER TAPE WIDTH
THICKNESS
W
8.00 ± 0.30
0.315 ± 0.012
t
0.255 ± 0.013 0.010 ± 0.0005
5.4 ± 0.10 0.205 ± 0.004
0.062 ± 0.001 0.0025 ± 0.00004
1
COVER TAPE
WIDTH
C
TAPE THICKNESS
T
t
DISTANCE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
F
3.50 ± 0.05
0.138 ± 0.002
CAVITY TO PERFORATION
(LENGTH DIRECTION)
P
2
2.00 ± 0.05
0.079 ± 0.002
13
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14
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