ATF-33143-BLKG [AVAGO]
Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package; 低噪声赝HEMT的表面贴装塑料封装
| 型号： | ATF-33143-BLKG |
| 厂家： | 
AVAGO TECHNOLOGIES LIMITED |
| 描述： | Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| 文件： | 总17页 (文件大小：407K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ATF-33143
Low Noise Pseudomorphic HEMT
in a Surface Mount Plastic Package
Data Sheet
Description
Features
Avago’s ATF-33143 is a high dynamic range, low noise
PHEMT housed in a 4-lead SC-70 (SOT-343) surface mount
plastic package.
Lead-free Option Available
Low Noise Figure
Excellent Uniformity in Product Specifications
1600 micron Gate Width
Based on its featured performance, ATF-33143 is ideal for
the first or second stage of base station LNA due to the
excellent combination of low noise figure and enhanced
linearity[1]. The device is also suitable for applications in
Wireless LAN, WLL/RLL, MMDS, and other systems requiring
super low noise figure with good intercept in the 450 MHz
to 10 GHz frequency range.
Low Cost Surface Mount Small Plastic Package
SOT-343 (4 lead SC-70)
Tape-and-Reel Packaging Option Available
Specifications
1.9 GHz; 4V, 80 mA (Typ.)
Note:
1. From the same PHEMT FET family, the smaller geometry ATF-
34143 may also be considered for the higher gain performance,
particularly in the higher frequency band (1.8 GHz and up).
0.5 dB Noise Figure
15 dB Associated Gain
22 dBm Output Power at 1 dB Gain Compression
33.5 dBm Output 3rd Order Intercept
Surface Mount Package SOT-343
Applications
Tower Mounted Amplifier, Low Noise Amplifier and
Driver Amplifier for GSM/TDMA/CDMA Base Stations
LNA for Wireless LAN, WLL/RLL and MMDS
Applications
Pin Connections and Package Marking
General Purpose Discrete PHEMT for other Ultra Low
DRAIN
SOURCE
Noise Applications
SOURCE
GATE
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 0)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
Note:
Top View. Package marking provides
orientation and identification.
“3P”= Device code
“x” = Datecodecharacter. Anewcharacter
is assigned for each month, year.
ATF-33143 Absolute Maximum Ratings[1]
Notes:
Absolute
1. Operation of this device above any one of
these parameters may cause permanent
damage.
Symbol
VDS
Parameter
Units
V
Maximum
Drain - Source Voltage[2]
Gate - Source Voltage[2]
Gate Drain Voltage[2]
Drain Current[2]
5.5
-5
2. Assumes DC quiesent conditions.
VGS
V
3.
VGS = 0V
4. Source lead temperature is 25°C. Derate
6 mW/°C for TL > 60°C.
5. Please refer to failure rates in reliability
section to assess the reliability impact
VGD
V
-5
[3]
IDS
mA
mW
dBm
°C
Idss
Pdiss
Pin max
TCH
Total Power Dissipation[4]
600
20
of running devices above
temperature of 140°C.
a channel
RF Input Power
Channel Temperature[5]
Storage Temperature
Thermal Resistance[6]
160
6. Thermal resistance measured using 150°C
Liquid Crystal Measurement method.
TSTG
jc
°C
-65 to 160
145
°C/W
Product Consistency Distribution Charts [8, 9]
500
120
100
80
Cpk = 1.7
Std = 0.05
+0.6
V
400
300
200
100
0
V
+3 Std
-3 Std
60
40
–0.6
V
20
0
0
0
2
4
6
8
0.2
0.3
0.4
0.5
0.6
0.7
0.8
V
(V)
DS
NF (dB)
[7]
Figure 1. Typical Pulsed I-V Curves . (VGS = -0.2V per step)
Figure 2. NF @ 2 GHz, 4 V, 80 mA.
LSL=0.2, Nominal=0.53, USL=0.8
100
120
Cpk = 1.21
Std = 0.94
Cpk = 2.3
Std = 0.2
100
80
60
40
20
80
60
40
20
-3 Std
+3 Std
-3 Std
+3 Std
0
0
31
33
35
29
37
13
14
15
GAIN (dB)
16
17
OIP3 (dBm)
Figure 3. OIP3 @ 2 GHz, 4 V, 80 mA.
LSL=30.0, Nominal=33.3, USL=37.0
Figure 4. Gain @ 2 GHz, 4 V, 80 mA.
LSL=13.5, Nominal=14.8, USL=16.5
Notes:
7. Under large signal conditions, VGS may swing positive and the drain current may exceed Idss.These conditions are acceptable as long as the maximum
Pdiss and Pin max ratings are not exceeded.
8. Distribution data sample size is 450 samples taken from 9 different wafers. Future wafers allocated to this product may have nominal values
anywhere within the upper and lower spec limits.
9. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match based
on production test requirements. Circuit losses have been de-embedded from actual measurements.
10. The probability of a parameter being between 1 is 68.3%, between 2ꢀ is 95.4% and between 3ꢀ is 99.7%.
2
ATF-33143 DC Electrical Specifications TA = 25°C, RF parameters measured in a test circuit for a typical device
Symbol
Idss
Parameters and Test Conditions
Saturated Drain Current
Pinchoff Voltage
Units Min. Typ.[2] Max.
[1]
VDS = 1.5 V, VGS = 0 V
VDS = 1.5 V, IDS = 10% of Idss
VGS = -0.5 V, VDS = 4 V
VDS = 1.5 V, gm = Idss /VP
VGD = 5 V
mA
V
175
237
305
-0.35
—
[1]
VP
-0.65 -0.5
Id
Quiescent Bias Current
Transconductance
mA
—
80
[1]
gm
mmho 360
μA
440
—
IGDO
Igss
Gate to Drain Leakage Current
Gate Leakage Current
1000
600
0.8
VGD = VGS = -4 V
μA
dB
—
42
f = 2 GHz
f = 900 MHz
f = 2 GHz
V
DS = 4 V, IDS = 80 mA
DS = 4 V, IDS = 60 mA
VDS = 4 V, IDS = 80 mA
DS = 4 V, IDS = 60 mA
0.5
0.5
V
NF
Ga
Noise Figure
dB
dB
0.4
0.4
V
VDS = 4 V, IDS = 80 mA
VDS = 4 V, IDS = 60 mA
13.5
30
15
15
16.5
Associated Gain[3]
f = 900 MHz
f = 2 GHz
VDS = 4 V, IDS = 80 mA
dB
21
21
V
DS = 4 V, IDS = 60 mA
VDS = 4 V, IDS = 80 mA
dBm
dBm
dBm
dBm
33.5
32
5 dBm Pout/Tone
VDS = 4 V, IDS = 60 mA
Output 3rd Order
Intercept Point[3]
OIP3
P1dB
f = 900 MHz
VDS = 4 V, IDS = 80 mA
VDS = 4 V, IDS = 60 mA
32.5
31
5 dBm Pout/Tone
f = 2 GHz
VDS = 4 V, IDS = 80 mA
VDS = 4 V, IDS = 60 mA
22
21
1 dB Compressed
Compressed Power[3]
f = 900 MHz
VDS = 4 V, IDS = 80 mA
21
20
V
DS = 4 V, IDS = 60 mA
Notes:
1. Guaranteed at wafer probe level.
2. Typical value determined from a sample size of 450 parts from 9 wafers.
3. Measurements obtained using production test board described in Figure 5.
50 Ohm
Input
50 Ohm
Input
Output
Transmission
Line Including
Gate Bias T
Matching Circuit
G_mag = 0.20
G_ang = 124
(0.3 dB loss)
Transmission
Line Including
Drain Bias T
(0.5 dB loss)
DUT
(0.5 dB loss)
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measurements. This circuit represents a
trade-off between an optimal noise match and a realizable match based on production test requirements. Circuit losses have been de-embedded from
actual measurements.
3
ATF-33143 Typical Performance Curves
40
40
30
20
10
0
2 V
3 V
4 V
30
20
10
2 V
3 V
4 V
0
0
20
40
60
(mA)
80
100 120
0
20
40
60
(mA)
80
100 120
I
I
DSQ
DSQ
[1]
[1]
Figure 6. OIP3, IIP3 vs. Bias at 2 GHz.
Figure 7. OIP3, IIP3 vs. Bias at 900 MHz.
25
20
15
10
5
25
20
15
10
5
2 V
3 V
4 V
2 V
3 V
4 V
0
0
0
20
40
60
(mA)
80
100 120
0
20
40
60
(mA)
80
100 120
I
I
DSQ
DSQ
[1,2]
[1,2]
Figure 8. P1dB vs. Bias at 2 GHz.
Figure 9. P1dB vs. Bias Tuned for NF @ 4V, 80 mA at
900 MHz.
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
16
15
22
21
20
19
18
17
16
1.2
1.0
0.8
0.6
0.4
0.2
G
a
14
13
12
11
10
G
a
NF
NF
2 V
3 V
4 V
2 V
3 V
4 V
0
20
40
60
(mA)
80
100 120
0
20
40
60
(mA)
80
100 120
I
I
DSQ
DSQ
[1]
[1]
Figure 10. NF and Ga vs. Bias at 2 GHz.
Figure 11. NF and Ga vs. Bias at 900 MHz.
Notes:
1. Measurements made on a fixed tuned production test board that was tuned for optimal gain match with reasonable noise figure at 4V 80 mA
bias. This circuit represents a trade-off between optimal noise match, maximum gain match and a realizable match based on production test
board requirements. Circuit losses have been de-embedded from actual measurements.
2. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease depending on
frequency and dc bias point. At lower values of IDSQ the device is running closer to class B as power output approaches P1dB. This results in higher
P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with
active biasing.
4
ATF-33143 Typical Performance Curves, continued
1.5
1.0
0.5
0
30
25
20
15
10
5
80 mA
60 mA
80 mA
60 mA
0
0
2
4
6
8
10
0
2
4
6
8
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 12. Fmin vs. Frequency and Current at 4V.
Figure 13. Associated Gain vs. Frequency and
Current at 4V.
40
25
2.0
1.5
1.0
0.5
0
25C
-40C
85C
25C
-40C
85C
35
30
25
20
15
20
15
10
5
0
2000
4000
6000
8000
0
2
4
6
8
10
FREQUENCY (MHz)
FREQUENCY (GHz)
Figure 15. P1dB, OIP3 vs. Frequency and Temp at
VDS = 4V, IDS = 80 mA.
Figure 14. Fmin and Ga vs. Frequency and Temp at
VDS = 4V, IDS = 80 mA.
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
35
35
30
25
20
15
10
5
P
OIP3
Gain
NF
30
25
20
15
10
5
1dB
3
2
1
0
P
Gain
NF
1dB
OIP3
0
0
0
20
40
60
(mA)
80
100 120
0
20
40
60
(mA)
80
100 120
I
I
DSQ
DSQ
Figure 16. OIP3, P1dB, NF and Gain vs. Bias[1,2] at
3.9 GHz.
Figure 17. OIP3, P1dB, NF and Gain vs. Bias[1,2] at
5.8 GHz.
Notes:
1. Measurements made on a fixed tuned test fixture that was tuned for noise figure at 4V 80 mA bias. This circuit represents a trade-off between
optimal noise match, maximum gain match and a realizable match based on production test requirements. Circuit losses have been de-
embedded from actual measurements.
2. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease depending on
frequency and dc bias point. At lower values of Idsq the device is running closer to class B as power output approaches P1dB. This results in higher
P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with
active biasing.
5
ATF-33143 Typical Performance Curves, continued
25
20
15
10
25
20
15
10
5
5
0
0
0
20
40
60
80
100
120
0
20
40
60
80
100
120
I
(mA)
I
(mA)
DS
DS
Figure 19. P1dB vs. IDS Active Bias[1] Tuned for NF @
4V, 80 mA at 900 MHz.
Figure 18. P1dB vs. IDS Active Bias[1] Tuned for NF @
4V, 80 mA at 2 GHz.
Note:
1. Measurements made on a fixed tuned test board that was tuned for optimal gain match with reasonable noise figure at 4V 80 mA bias. This
circuit represents a trade-off between an optimal noise match, maximum gain match and a realizable match based on production test board
requirements. Circuit losses have been de-embedded from actual measurements.
6
ATF-33143 Power Parameters Tuned for Max P1dB, VDS = 4 V, IDSQ = 80 mA
Freq
(GHz)
P1dB
(dBm)
Id
(mA)
G1dB
(dB)
PAE1dB
(%)
P3dB
(dBm)
Id
(mA)
PAE3dB
(%)
Out_mag
(Mag.)
Out_ang
(°)
0.9
1.5
1.8
2.0
4.0
6.0
20.7
21.2
21.1
21.6
23.0
24.0
89
91
80
81
97
23.2
20.7
19.2
18.1
11.9
5.9
33
36
40
44
48
36
23.2
23.8
23.0
23.2
24.6
25.2
102
116
94
89
135
136
51
51
52
57
48
36
0.39
0.43
0.43
0.42
0.40
0.37
160
165
170
174
-150
-124
130
70
P
Gain
PAE
out
60
50
40
30
20
10
0
-10
-20
-40
-30
-20
-10
0
10
20
P
in
(dBm)
Figure 20. Swept Power Tuned for Max P
1dB
V
=4V, I = 80 mA, 2 GHz.
DS
DSQ
Notes:
1. Measurements made on ATN LP1 power load pull system.
2. Quicescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease depending
on frequency and dc bias point. At lower values of IDSQ the device is running closer to class B as power output approaches P1dB. This results in
higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done
with active biasing.
3. PAE (%) = ((Pout – Pin) / Pdc) X 100
4. Gamma out is the reflection coefficient of the matching circuit presented to the output of the device.
7
ATF-33143 Typical Scattering Parameters, VDS = 2V, IDS = 40 mA
Freq.
(GHz)
S11
S21
Mag.
S12
Mag.
S22
MSG/MAG
(dB)
Mag.
Ang.
dB
Ang.
dB
Ang.
Mag.
Ang.
0.5
0.8
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
0.88
0.79
0.78
0.75
0.74
0.74
0.74
0.75
0.75
0.76
0.78
0.80
0.83
0.83
0.86
0.88
0.90
0.91
0.91
0.92
0.93
0.94
0.93
-72.70
22.08 12.81
134.40
111.20
106.50
88.30
79.80
74.80
63.00
53.10
35.00
17.20
-1.30
-19.30
-35.20
-49.30
-64.30
-80.20
-95.80
-27.02
-24.13
-23.93
-22.57
-22.14
-21.84
-21.24
-20.68
-19.59
-18.56
-17.83
-17.42
-17.29
-17.08
-16.59
-16.53
-16.81
-17.38
-17.78
-18.00
-17.87
-18.07
-18.79
0.045
0.062
0.064
0.075
0.079
0.082
0.088
0.094
0.106
0.119
0.129
0.135
0.137
0.140
0.148
0.149
0.144
0.135
54.50
40.70
38.00
29.80
26.80
24.90
20.80
17.10
9.30
0.28
0.37
0.38
0.42
0.45
0.46
0.49
0.51
0.53
0.54
0.54
0.57
0.60
0.63
0.65
0.68
0.72
0.75
0.77
0.80
0.82
0.83
0.85
-118.70
-149.90
-155.40
-176.20
174.70
169.40
160.10
152.10
139.20
124.70
108.00
90.40
74.80
62.70
50.90
37.40
21.40
5.80
-5.70
24.54
21.81
21.41
19.34
18.40
17.80
16.56
15.46
13.73
11.44
9.80
8.35
7.43
6.45
6.41
6.14
5.64
4.60
3.64
-112.10
-119.80
-149.60
-162.80
-170.10
172.30
159.10
137.00
117.20
98.10
80.10
64.50
50.30
36.30
21.50
7.20
-5.00
19.46
18.86
16.11
14.70
13.84
11.98
10.37
7.95
6.20
4.69
3.12
1.68
9.41
8.86
6.44
5.47
4.94
3.98
3.31
2.50
2.05
1.73
1.44
1.22
1.07
0.96
0.85
0.74
-0.70
-12.80
-26.00
-37.30
-46.80
-58.30
-71.30
-83.90
-95.60
9.0
0.48
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
-0.46
-1.50
-2.70
-4.24
-5.49
-6.42
-7.26
-8.20
-9.51
0.62 -110.20
0.54 -121.90
0.49 -134.20
0.44 -146.80
0.40 -160.40
0.34 -171.00
-15.50
-27.50
-40.50
-52.30
-61.20
0.129 -103.90
0.126 -113.70
0.128 -124.20
0.125 -136.40
0.115 -145.10
-15.80
-25.70
-37.90
-49.70
3.44
3.22
3.11
1.79
ATF-33143 Typical Noise Parameters
VDS = 2V, IDS = 40 mA
40
30
20
10
0
Freq.
GHz
Fmin opt
dB
Rn/50
-
Ga
dB
Mag.
Ang.
26.00
42.20
44.80
69.50
MSG
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.26
0.30
0.31
0.34
0.34
0.39
0.51
0.53
0.61
0.70
0.82
0.93
1.04
1.12
1.21
0.45
0.38
0.36
0.31
0.26
0.27
0.28
0.32
0.41
0.49
0.53
0.59
0.62
0.67
0.69
0.07
0.07
0.07
0.06
0.04
0.05
0.03
0.03
0.04
0.06
0.11
0.23
0.38
0.59
0.77
24.74
21.02
20.36
17.40
16.50
15.82
14.59
13.13
11.27
9.92
MAG
93.60
108.60
150.70
165.60
-162.10
-136.80
-113.60
-91.50
-72.60
-55.90
-42.20
2
|S
|
21
-10
0
5
10
FREQUENCY (GHz)
15
20
Figure 21. MSG/MAG and |S21|
2 vs. Frequency at 2V, 40 mA.
8.70
7.71
6.69
6.04
5.73
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system. From these
measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end
of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes
connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch
diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
8
ATF-33143 Typical Scattering Parameters, VDS = 3 V, IDS = 40 mA
Freq.
(GHz)
S11
S21
Mag.
S12
Mag.
S22
MSG/MAG
(dB)
Mag.
Ang.
dB
Ang.
dB
Ang.
Mag.
Ang.
0.5
0.8
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
0.87
0.78
0.77
0.74
0.73
0.73
0.73
0.74
0.74
0.75
0.77
0.79
0.82
0.83
0.86
0.88
0.90
0.91
0.91
0.92
0.93
0.94
0.93
-72.20
22.51 13.42
134.40
111.20
106.50
88.30
79.90
74.80
63.10
53.30
35.20
17.30
-1.30
-19.50
-35.50
-49.60
-64.90
-81.00
-96.80
-27.20
-24.27
-24.06
-22.79
-22.34
-22.13
-21.41
-20.91
-19.79
-18.80
-17.99
-17.58
-17.44
-17.13
-16.64
-16.58
-16.81
-17.38
-17.78
-17.93
-17.87
-18.00
-18.72
0.044
0.061
0.063
0.073
0.077
0.079
0.086
0.091
0.103
0.115
0.126
0.132
0.134
0.139
0.147
0.148
0.144
0.135
54.40
40.60
37.90
29.80
26.90
25.00
21.10
17.50
10.00
0.00
-11.90
-24.90
-36.00
-45.50
-57.00
-70.10
-82.70
-94.40
0.27
0.35
0.36
0.40
0.42
0.43
0.46
0.48
0.50
0.51
0.52
0.55
0.57
0.60
0.63
0.66
0.70
0.73
0.76
0.79
0.81
0.82
0.84
-109.80
-143.70
-150.10
-172.10
178.40
172.90
163.10
154.80
141.20
126.50
109.80
92.10
76.20
64.00
52.10
38.60
22.60
6.80
-5.00
24.84
22.09
21.67
19.64
18.71
18.16
16.85
15.80
14.06
11.53
9.99
8.57
7.64
6.69
6.65
6.38
6.00
4.90
3.90
-111.60
-119.30
-149.00
-162.20
-169.50
172.90
159.70
137.60
117.70
98.60
80.60
64.90
50.70
36.60
21.90
7.50
-4.80
19.88
19.28
16.52
15.11
14.24
12.38
10.78
8.37
6.63
5.10
3.54
2.10
9.87
9.26
6.73
5.72
5.17
4.17
3.46
2.62
2.15
1.80
1.51
1.28
1.12
1.00
0.89
0.77
9.0
0.92
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
-0.04
-1.11
-2.32
-3.86
-5.11
-6.05
-6.95
-7.91
-9.25
0.64 -111.40
0.56 -123.30
0.50 -135.90
0.45 -148.70
0.41 -162.30
0.35 -172.90
-15.40
-27.40
-40.40
-52.30
-61.30
0.129 -103.00
0.127 -112.80
0.128 -123.40
0.126 -135.70
0.116 -144.30
-15.10
-25.10
-37.30
-49.10
3.71
3.48
3.41
1.94
ATF-33143 Typical Noise Parameters
VDS = 3V, IDS = 40 mA
40
30
Freq.
GHz
Fmin opt
Rn/50
-
Ga
dB
dB
Mag.
Ang.
MSG
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.24
0.29
0.31
0.37
0.34
0.38
0.51
0.52
0.58
0.68
0.80
0.89
1.01
1.09
1.18
0.45
0.38
0.34
0.28
0.25
0.25
0.28
0.31
0.40
0.46
0.54
0.57
0.61
0.65
0.68
28.40
40.90
42.60
66.30
90.10
105.80
147.40
162.80
-165.20
-138.50
-115.00
-92.50
-72.80
-56.40
-42.60
0.07
0.07
0.07
0.07
0.05
0.05
0.03
0.03
0.03
0.05
0.09
0.20
0.35
0.53
0.69
25.26
21.26
20.50
17.67
16.57
15.93
14.72
13.29
11.45
10.05
8.97
20
10
0
MAG
2
|S
|
21
-10
5
10
FREQUENCY (GHz)
15
0
20
Figure 22. MSG/MAG and |S21|
2 vs. Frequency at 3V, 40 mA.
7.90
6.90
6.26
5.99
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system. From these
measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end
of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes
connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch
diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
9
ATF-33143 Typical Scattering Parameters, VDS = 3 V, IDS = 60 mA
Freq.
(GHz)
S11
S21
Mag.
S12
Mag.
S22
MSG/MAG
(dB)
Mag.
Ang.
dB
Ang.
dB
Ang.
Mag.
Ang.
0.5
0.8
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
0.87
0.78
0.77
0.74
0.73
0.73
0.73
0.74
0.75
0.75
0.77
0.79
0.82
0.83
0.86
0.88
0.90
0.91
0.91
0.92
0.93
0.94
0.93
-75.30
22.95 14.06
20.22 10.26
133.00
110.00
105.50
87.60
79.30
74.40
62.80
53.10
35.40
17.70
-0.60
-18.60
-34.40
-48.50
-63.50
-79.50
-95.10
-28.18
-25.19
-24.89
-23.37
-22.87
-22.53
-21.76
-21.07
-19.79
-18.68
-17.88
-17.42
-17.29
-17.03
-16.49
-16.43
-16.71
-17.27
-17.72
-17.86
-17.72
-17.92
-18.64
0.039
0.055
0.057
0.068
0.072
0.075
0.082
0.089
0.103
0.117
0.128
0.135
0.137
0.141
0.150
0.151
0.146
0.137
55.10
42.60
40.50
33.50
30.80
29.00
25.10
21.40
13.20
2.80
0.27
0.36
0.37
0.41
0.43
0.44
0.47
0.50
0.52
0.52
0.53
0.56
0.59
0.62
0.65
0.68
0.71
0.74
0.77
0.80
0.82
0.82
0.84
-124.20
-153.90
-158.80
-178.70
172.60
167.50
158.50
151.00
138.60
124.40
107.80
90.20
74.70
62.70
50.90
37.40
21.40
5.80
-6.10
25.57
22.71
22.24
20.07
19.11
18.49
17.17
16.00
14.15
11.53
10.03
8.66
7.75
6.81
6.72
6.46
6.04
4.99
3.98
3.78
-114.70
-122.30
-151.60
-164.60
-171.80
171.00
158.10
136.40
116.90
97.80
79.90
64.50
50.40
36.40
21.60
7.30
-5.00
19.59
16.78
15.35
14.47
12.60
10.99
8.56
6.80
5.28
3.71
2.26
9.56
6.91
5.87
5.30
4.27
3.54
2.68
2.19
1.84
1.53
1.30
1.13
1.02
0.90
0.78
-9.70
-23.20
-34.60
-44.50
-56.20
-69.40
-82.10
-94.00
9.0
1.07
0.12
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
-0.94
-2.13
-3.67
-4.93
-5.85
-6.70
-7.61
-8.97
0.66 -109.70
0.57 -121.40
0.51 -133.90
0.46 -146.60
0.42 -160.30
0.36 -170.90
-15.50
-27.50
-40.60
-52.30
-61.40
0.130 -102.70
0.128 -112.40
0.130 -123.00
0.127 -135.30
0.117 -144.00
-15.80
-25.80
-37.90
-49.70
3.54
3.45
2.08
ATF-33143 Typical Noise Parameters
VDS = 3V, IDS = 60 mA
40
30
Freq.
GHz
Fmin opt
Rn/50
-
Ga
dB
dB
Mag.
Ang.
MSG
20
10
0
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.23
0.28
0.29
0.34
0.34
0.38
0.52
0.53
0.61
0.68
0.83
0.91
1.04
1.09
1.13
0.43
0.35
0.35
0.26
0.23
0.22
0.25
0.30
0.39
0.47
0.52
0.58
0.61
0.66
0.70
29.20
42.40
45.00
68.80
93.30
109.70
150.60
167.50
-160.30
-134.70
-112.10
-89.70
-71.50
-54.80
-41.40
0.06
0.06
0.07
0.06
0.04
0.05
0.03
0.03
0.04
0.06
0.11
0.22
0.36
0.56
0.73
25.64
21.62
20.87
17.84
16.89
16.24
14.93
13.52
11.65
10.28
9.09
MAG
2
|S
|
21
-10
5
10
FREQUENCY (GHz)
15
0
20
Figure 23. MSG/MAG and |S21|
2 vs. Frequency at 3V, 60 mA.
8.09
7.07
6.43
6.15
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system. From these
measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end
of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes
connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch
diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
10
ATF-33143 Typical Scattering Parameters, VDS = 4 V, IDS = 40 mA
Freq.
(GHz)
S11
S21
Mag.
S12
Mag.
S22
MSG/MAG
(dB)
Mag.
Ang.
dB
Ang.
dB
Ang.
Mag.
Ang.
0.5
0.8
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
0.87
0.78
0.77
0.73
0.72
0.72
0.72
0.73
0.74
0.75
0.77
0.79
0.82
0.83
0.86
0.88
0.90
0.91
0.91
0.92
0.93
0.94
0.93
-72.50
22.73 13.74
20.07 10.09
134.30
111.00
106.40
88.20
79.80
74.70
63.00
53.20
35.10
17.10
-1.60
-19.80
-35.90
-50.20
-65.60
-81.80
-97.60
-27.39
-24.42
-24.20
-22.90
-22.44
-22.23
-21.58
-21.07
-19.93
-18.92
-18.11
-17.68
-17.50
-17.23
-16.69
-16.58
-16.81
-17.32
-17.78
-17.93
-17.79
-18.00
-18.72
0.043
0.060
0.062
0.072
0.076
0.078
0.084
0.089
0.101
0.113
0.124
0.130
0.133
0.137
0.146
0.148
0.144
0.136
54.10
40.40
37.70
29.80
26.90
25.00
21.20
17.80
10.40
0.70
-11.20
-24.10
-35.10
-44.60
-56.10
-69.10
-81.70
-93.50
0.26
0.33
0.34
0.38
0.40
0.41
0.44
0.46
0.48
0.49
0.50
0.53
0.56
0.59
0.62
0.65
0.69
0.72
0.76
0.79
0.81
0.82
0.84
-104.90
-140.20
-147.10
-169.70
-179.30
175.10
165.10
156.50
142.50
127.70
111.00
93.40
77.30
64.90
53.00
39.50
23.50
7.50
-4.30
25.04
22.26
21.82
19.78
18.84
18.29
17.03
15.98
14.23
11.54
10.07
8.68
7.77
6.80
6.78
6.55
6.13
5.03
4.06
3.87
-111.80
-119.40
-149.10
-162.20
-169.50
173.00
159.80
137.70
117.90
98.80
80.80
65.10
50.90
36.80
22.00
7.60
-4.70
19.46
16.69
15.28
14.41
12.55
10.95
8.54
6.80
5.28
3.72
2.29
9.43
6.85
5.82
5.26
4.24
3.53
2.68
2.19
1.84
1.54
1.30
1.14
1.02
0.90
0.78
9.0
1.10
0.15
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
-0.93
-2.14
-3.69
-4.97
-5.92
-6.85
-7.83
-9.19
0.66 -112.40
0.57 -124.50
0.51 -137.30
0.46 -150.10
0.41 -163.80
0.35 -174.60
-15.30
-27.20
-40.30
-52.20
-61.20
0.129 -102.10
0.127 -112.20
0.129 -122.80
0.126 -135.10
0.116 -143.80
-14.60
-24.50
-36.80
-48.70
3.62
3.54
2.05
ATF-33143 Typical Noise Parameters
VDS = 4V, IDS = 40 mA
40
30
Freq.
GHz
Fmin opt
Rn/50
-
Ga
dB
MSG
dB
Mag.
Ang.
20
10
0
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.30
0.33
0.34
0.38
0.37
0.40
0.53
0.54
0.60
0.68
0.82
0.89
1.00
1.07
1.16
0.44
0.36
0.33
0.26
0.25
0.23
0.27
0.31
0.38
0.46
0.49
0.56
0.60
0.66
0.68
31.50
42.70
44.50
68.70
90.70
106.40
145.80
162.00
-165.30
-138.80
-115.40
-93.20
-73.10
-56.60
-42.80
0.08
0.07
0.08
0.06
0.05
0.05
0.04
0.03
0.04
0.05
0.09
0.19
0.33
0.50
0.65
25.59
21.43
20.63
17.72
16.65
15.99
14.70
13.32
11.47
10.17
8.93
MAG
2
|S
|
21
-10
5
10
FREQUENCY (GHz)
15
0
20
Figure 24. MSG/MAG and |S21|
2 vs. Frequency at 4V, 40 mA.
7.99
7.00
6.40
6.11
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system. From these
measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end
of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes
connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch
diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
11
ATF-33143 Typical Scattering Parameters, VDS = 4 V, IDS = 60 mA
Freq.
(GHz)
S11
S21
Mag.
S12
Mag.
S22
MSG/MAG
(dB)
Mag.
Ang.
dB
Ang.
dB
Ang.
Mag.
Ang.
0.5
0.8
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
0.86
0.77
0.76
0.73
0.72
0.72
0.72
0.73
0.74
0.75
0.77
0.79
0.82
0.83
0.86
0.88
0.90
0.91
0.91
0.92
0.93
0.94
0.93
-75.60
23.20 14.45
20.45 10.53
132.90
109.80
105.30
87.50
79.20
74.20
62.70
53.00
35.20
17.50
-1.00
-19.00
-34.90
-49.10
-64.30
-80.40
-96.20
-28.18
-25.35
-25.04
-23.61
-22.97
-22.73
-21.94
-21.31
-20.00
-18.86
-17.99
-17.52
-17.39
-17.08
-16.54
-16.48
-16.71
-17.27
-17.65
-17.79
-17.72
-17.92
-18.56
0.039
0.054
0.056
0.066
0.071
0.073
0.080
0.086
0.100
0.114
0.126
0.133
0.135
0.140
0.149
0.150
0.146
0.137
54.80
42.20
40.20
33.20
30.60
28.90
25.10
21.60
13.70
3.40
0.26
0.34
0.35
0.39
0.41
0.42
0.45
0.47
0.49
0.50
0.51
0.54
0.57
0.60
0.63
0.66
0.70
0.73
0.76
0.79
0.81
0.82
0.84
-118.50
-150.00
-155.50
-176.10
175.00
169.80
160.60
152.70
139.90
125.70
109.10
91.60
75.90
63.70
52.00
38.50
22.50
6.70
-5.20
25.69
22.90
22.42
20.29
19.26
18.70
17.36
16.24
13.79
11.57
10.15
8.80
7.88
6.92
6.92
6.69
6.27
5.14
4.12
3.90
-115.00
-122.50
-151.80
-164.60
-171.80
171.00
158.20
136.50
117.00
98.00
80.20
64.70
50.60
36.60
21.80
7.50
-4.80
19.80
16.98
15.55
14.66
12.79
11.17
8.76
7.00
5.48
3.92
2.48
9.77
7.06
5.99
5.41
4.36
3.62
2.74
2.24
1.88
1.57
1.33
1.16
1.04
0.92
0.80
-8.90
-22.30
-33.60
-43.40
-55.20
-68.40
-81.10
-92.90
9.0
1.29
0.34
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
-0.72
-1.94
-3.48
-4.73
-5.68
-6.56
-7.54
-8.87
0.67 -110.80
0.58 -122.80
0.52 -135.40
0.47 -148.30
0.42 -162.10
0.36 -172.80
-15.40
-27.30
-40.40
-52.20
-61.20
0.131 -101.60
0.129 -111.60
0.130 -122.20
0.127 -134.70
0.118 -143.30
-15.20
-25.10
-37.30
-49.20
3.72
3.59
2.19
ATF-33143 Typical Noise Parameters
VDS = 4V, IDS = 60 mA
40
30
Freq.
GHz
Fmin opt
Rn/50
-
Ga
dB
dB
Mag.
Ang.
MSG
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.29
0.33
0.34
0.38
0.39
0.42
0.47
0.51
0.63
0.72
0.82
0.93
1.03
1.13
1.22
0.42
0.33
0.32
0.26
0.22
0.22
0.25
0.29
0.39
0.46
0.51
0.57
0.61
0.66
0.69
31.40
44.70
48.00
71.90
94.00
109.70
149.40
166.80
-160.60
-135.30
-112.40
-90.90
-71.80
-55.50
-41.80
0.08
0.07
0.07
0.06
0.05
0.05
0.03
0.03
0.04
0.06
0.11
0.21
0.37
0.55
0.72
25.91
21.80
21.00
18.14
16.96
16.29
14.95
13.58
11.74
10.36
9.17
20
10
0
MAG
2
|S
|
21
-10
5
10
FREQUENCY (GHz)
15
0
20
Figure 25. MSG/MAG and |S21|
2 vs. Frequency at 4V, 60 mA.
8.18
7.19
6.56
6.29
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system. From these
measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end
of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes
connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch
diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
12
ATF-33143 Typical Scattering Parameters, VDS = 4 V, IDS = 80 mA
Freq.
(GHz)
S11
S21
Mag.
S12
Mag.
S22
MSG/MAG
(dB)
Mag.
Ang.
dB
Ang.
dB
Ang.
Mag.
Ang.
0.5
0.8
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
0.86
0.77
0.76
0.73
0.72
0.72
0.72
0.73
0.74
0.75
0.77
0.79
0.82
0.83
0.86
0.88
0.90
0.91
0.91
0.92
0.93
0.94
0.93
-77.20
23.39 14.76
20.60 10.71
132.20
109.20
104.80
87.10
78.90
74.00
62.50
53.00
35.30
17.70
-0.70
-18.70
-34.50
-48.70
-63.80
-79.90
-95.60
-28.82
-25.86
-25.49
-23.86
-23.31
-22.95
-22.03
-21.39
-20.00
-18.86
-17.99
-17.47
-17.34
-17.03
-16.49
-16.38
-16.66
-17.21
-17.59
-17.79
-17.65
-17.85
-18.56
0.036
0.051
0.053
0.064
0.068
0.071
0.079
0.085
0.100
0.114
0.126
0.134
0.136
0.141
0.150
0.152
0.147
0.138
55.30
43.40
41.70
35.20
32.70
31.00
27.20
23.50
15.30
4.80
0.26
0.34
0.36
0.39
0.41
0.42
0.45
0.48
0.50
0.51
0.52
0.55
0.58
0.61
0.63
0.66
0.70
0.73
0.76
0.79
0.81
0.82
0.84
-125.40
-154.80
-159.50
-179.10
172.40
167.30
158.50
151.00
138.80
124.80
108.40
90.90
75.40
63.30
51.60
38.10
22.10
6.40
-5.00
26.13
23.22
22.72
20.48
19.50
18.87
17.47
16.34
13.59
11.56
10.17
8.84
7.93
6.98
6.96
6.73
6.26
5.21
4.20
3.98
-116.60
-124.00
-153.00
-165.80
-172.90
170.10
157.40
136.00
116.70
97.70
80.00
64.50
50.50
36.50
21.70
7.40
-4.80
19.93
17.09
15.66
14.77
12.89
11.27
8.84
7.09
5.57
4.00
2.55
9.91
7.15
6.06
5.47
4.41
3.66
2.77
2.26
1.90
1.58
1.34
1.17
1.05
0.93
0.81
-7.80
-21.30
-32.80
-42.80
-54.60
-67.80
-80.60
-92.60
9.0
1.36
0.43
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
-0.65
-1.85
-3.39
-4.64
-5.57
-6.46
-7.40
-8.75
0.68 -110.20
0.59 -122.00
0.53 -134.80
0.47 -147.60
0.43 -161.40
0.36 -172.10
-15.40
-27.30
-40.40
-52.20
-61.20
0.132 -101.10
0.129 -111.20
0.131 -121.90
0.128 -134.30
0.118 -143.10
-15.40
-25.30
-37.50
-49.30
3.73
3.65
2.24
ATF-33143 Typical Noise Parameters
VDS = 4V, IDS = 80 mA
40
30
20
10
0
Freq.
GHz
Fmin opt
Rn/50
-
Ga
dB
dB
Mag.
Ang.
34.50
46.40
50.40
74.80
MSG
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.30
0.35
0.35
0.40
0.42
0.45
0.49
0.55
0.68
0.75
0.90
1.00
1.12
1.19
1.33
0.42
0.32
0.32
0.23
0.20
0.19
0.23
0.28
0.38
0.48
0.52
0.57
0.62
0.67
0.69
0.08
0.07
0.07
0.06
0.05
0.05
0.04
0.03
0.04
0.07
0.13
0.25
0.43
0.65
0.85
26.23
21.96
21.16
18.47
17.18
16.48
15.09
13.70
11.85
10.49
9.27
MAG
98.80
2
|S
|
21
114.10
153.70
171.50
-156.70
-133.30
-110.70
-89.60
-70.80
-54.60
-40.80
-10
0
5
10
FREQUENCY (GHz)
15
20
Figure 26. MSG/MAG and |S21|
2 vs. Frequency at 4V, 80 mA.
8.27
7.28
6.66
6.31
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system. From these
measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end
of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes
connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch
diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
13
Noise Parameter Applications Information
Fmin values at 2 GHz and higher are based on
measurements while the Fmins below 2 GHz have been
extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different
impedances using an ATN NP5 test system. From these
measurements, a true Fmin is calculated. Fmin represents
the true minimum noise figure of the device when the
deviceispresentedwithanimpedancematchingnetwork
that transforms the source impedance, typically 50Ω, to
an impedance represented by the reflection coefficient
o. The designer must design a matching network that
will present o to the device with minimal associated
circuit losses. The noise figure of the completed amplifier
is equal to the noise figure of the device plus the losses
of the matching network preceding the device. The
noise figure of the device is equal to Fmin only when the
device is presented with o. If the reflection coefficient
of the matching network is other than o, then the noise
figure of the device will be greater than Fmin based on
the following equation.
of the matching networks are non-zero and they will
also add to the noise figure of the device creating a
higher amplifier noise figure. The losses of the matching
networks are related to the Q of the components and
associated printed circuit board loss. o is typically fairly
low at higher frequencies and increases as frequency is
lowered. Larger gate width devices will typically have a
lower o as compared to narrower gate width devices.
Typically for FETs, the higher o usually infers that an
impedance much higher than 50Ω is required for the
device to produce Fmin. At VHF frequencies and even
lower L Band frequencies, the required impedance can
be in the vicinity of several thousand ohms. Matching to
such a high impedance requires very hi-Q components
in order to minimize circuit losses. As an example at
900 MHz, when airwwound coils (Q>100) are used for
matching networks, the loss can still be up to 0.25 dB
which will add directly to the noise figure of the device.
Using muiltilayer molded inductors with Qs in the 30 to
50 range results in additional loss over the airwound coil.
Losses as high as 0.5 dB or greater add to the typical 0.15
dB Fmin of the device creating an amplifier noise figure
of nearly 0.65 dB. A discussion concerning calculated
and measured circuit losses and their effect on amplifier
noise figure is covered in Avago Application 1085.
2
NF = Fmin + 4 Rn
Zo
|
s
– o |
(|1 +
o|2)(1– s|2)
Where Rn/Zo is the normalized noise resistance, o is
the optimum reflection coefficient required to produce
Fmin and s is the reflection coefficient of the source
impedance actually presented to the device. The losses
Reliability Data
Nominal Failures per million (FPM)
for different durations
90% confidence Failures per million (FPM)
for different durations
Channel
Temperature
(oC)
(FITs)
1000
hours
1 year
5 year
10 year
30 year
(FITs)
1000
hours
1 year
5 year
10 year
30 year
100
125
140
150
160
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
4400
<0.1
<0.1
<0.1
2
<0.1
<0.1
<0.1
140
<0.1
<0.1
160
<0.1
<0.1
<0.1
<0.1
<0.1
21
<0.1
<0.1
<0.1
0.3
<0.1
<0.1
6
<0.1
<0.1
160
<0.1
11
9.3K
131K
520K
1000K
26K
780
24K
590K
8800
120K
850K
920
450K
21K
370K
1000K
67
180
830K
53K
NOT
recommended
Predicted failures with temperature extrapolated from failure distribution and activation energy data of higher temperature
operational life STRIFE of PHEMT process
14
ATF-33143 Die Model
Statz Model
MESFETM1
NFET=yes
PFET=no
Vto=–0.95
Beta=0.48
Lambda=0.09
Alpha=4
B=0.8
Cgs=1.6 pF
Gdcap=3
Cgd=0.32 pF
Rgd=
Rc=62.5
Gsfwd=1
Gsrev=0
Gdfwd=1
Gdrev=0
Vjr=1
Taumd1=no
Fnc=1E6
R=0.17
C=0.2
Tqm=
P=0.65
Vmax=
wVgfwd=
wBvgs=
Fc=
Is=1 nA
Ir=1 nA
Imax=0.1
Xti=
Tnom=27
Idstc=
Rd=.125
wBvgd=
wBvds=
Rg=1
Vbi=0.7
Tau=
Rs=0.0625
Ld=0.00375 nH
Lg-0.00375 nH
Ls=0.00125 nH
Cds=0.08 pF
Crf=0.1
wldsmax=
wPmax=
Al lParams=
N=
Betatce=
Delta1=0.2
Delta2=
Eg=
Vbr=
Vtotc=
Rin=
Gscap=3
This model can be used as a design tool. It has been tested
on MDS for various specifications. However, for more precise
and accurate design, please refer to the measured data in
this data sheet. For future improvements Avago reserves
the right to change these models without prior notice.
ATF-33143 Model
INSIDE Package
Var
VIA2
VAR
Ean
V3
VAR1
TLINP
TLINP
D=20.0 mil
H=25.0 mil
T=0.15 mil
Rho=1.0
W=40.0 mil
K=5
TL1
TL2
Z2=85
Z1=30
Z=Z2/2 Ohm
L=20 0 mil
K=K
Z=Z2/2 Ohm
L=20 0 mil
K=K
C
A=0.0000
F=1 GHz
TanD=0.001
A=0.0000
F=1 GHz
TanD=0.001
C1
GATE
SOURCE
C=0.1 pF
L
L
Port
TLINP
TL7
TLINP
TL8
TLINP
TLINP
Port
S2
L6
L1
G
TL4
TL3
L=0.2 nH
R=0.001
L=0.6 nH
R=0.001
Num=1
Z=Z2/2 Ohm Z=Z1 Ohm
VIA2
VIA2
Z=Z1 Ohm
L=15 mil
K=1
Z=Z2 Ohm
L=25 mil
K=K
Num=4
L=5.0 mil
K=K
L=15 mil
K=1
V1
V4
GaAsFET
D=20 mil
H=25.0 mil
T=0.15 mil
Rho=1.0
W=40 mil
D=20.0 mil
H=25.0 mil
T=0.15 mil
Rho=1.0
W=40.0 mil
C
A=0.0000
F=1 GHz
A=0.0000
F=1 GHz
FET1
C2
A=0.000
F=1 GHz
A=0.000
F=1 GHz
Model=MESFETN1
Mode=nonlinear
C=0.11 pF
TanD=0.001 TanD=0.001
DRAIN
TanD=0.001 TanD=0.001
SOURCE
L
TLINP
TLINP
Port
D
L7
TL5
TL6
C=0.6 nH
R=0.001
L
Port
S1
TLINPTL9
Z=Z2 Ohm
L=10.0 mil
K=K
Z=Z2 Ohm
L=26.0 mil
K=K
Z=Z1 Ohm
L=15 mil
K=1
TLINP
Num=4
L4
MSub
TL10
VIA2
L=0.2 nH
R=0.001
Num=2
Z=Z1 Ohm
L=15 mil
K=1
MSUB
V2
A=0.0000
F=1 GHz
A=0.0000
F=1 GHz
MSub1
H=25.0 mil
Er=9.6
D=20.0 mil
H=25.0 mil
T=0.15 mil
Rho=1.0
W=40.0 mil
A=0.000
F=1 GHz
TanD=0.001
TanD=0.001 TanD=0.001
A=0.000
F=1 GHz
TanD=0.001
Mur=1
Cond=1.0E+50
Hu=3.9e+0.34 mil
T=0.15 mil
TanD=D
Rough=D mil
15
Part Number Ordering Information
No. of
Part Number
ATF-33143-TR1G
ATF-33143-TR2G
ATF-33143-BLKG
Devices
3000
10000
100
Container
7”Reel
13”Reel
antistatic bag
Package Dimensions
SC-70 4L/SOT-343
Recommended PCB Pad Layout for
Avago’s SC70 4L/SOT-343 Products
1.30 (.051)
BSC
1.30
(0.051)
1.00
(0.039)
HE
E
2.00
(0.079)
0.60
(0.024)
1.15 (.045) BSC
0.9
(0.035)
b1
1.15
D
(0.045)
mm
(inches)
Dimensions in
A
A2
A1
b
C
L
DIMENSIONS (mm)
SYMBOL
E
D
HE
A
A2
A1
b
MIN.
1.15
1.85
1.80
0.80
0.80
0.00
0.15
0.55
0.10
0.10
MAX.
1.35
2.25
2.40
1.10
1.00
0.10
0.40
0.70
0.20
0.46
NOTES:
1. All dimensions are in mm.
2. Dimensions are inclusive of plating.
3. Dimensions are exclusive of mold flash & metal burr.
4. All specifications comply to EIAJ SC70.
5. Die is facing up for mold and facing down for trim/form,
ie: reverse trim/form.
b1
c
L
6. Package surface to be mirror finish.
16
Device Orientation
REEL
TOP VIEW
4 mm
END VIEW
CARRIER
TAPE
8 mm
3Px
3Px
3Px
3Px
USER
FEED
DIRECTION
COVER TAPE
Tape Dimensions and Product Orientation For Outline 4T
P
2
P
P
D
o
E
F
W
C
D
1
t (CARRIER TAPE THICKNESS)
1
T (COVER TAPE THICKNESS)
t
K
o
10 MAX.
10 MAX.
A
B
o
o
DESCRIPTION
SYMBOL
SIZE (mm)
2.40 0.10
2.40 0.10
1.20 0.10
4.00 0.10
1.00 + 0.25
SIZE (INCHES)
CAVITY
LENGTH
WIDTH
DEPTH
PITCH
A
B
K
P
0.094 0.004
0.094 0.004
0.047 0.004
0.157 0.004
0.039 + 0.010
o
o
o
BOTTOM HOLE DIAMETER
D
1
PERFORATION
DIAMETER
PITCH
POSITION
D
1.55 0.10
4.00 0.10
1.75 0.10
0.061 + 0.002
0.157 0.004
0.069 0.004
P
o
E
CARRIER TAPE
COVER TAPE
DISTANCE
WIDTH
THICKNESS
W
8.00 + 0.30 - 0.10 0.315 + 0.012
t
0.254 0.02
0.0100 0.0008
1
WIDTH
TAPE THICKNESS
C
T
5.40 0.10
0.062 0.001
0.205 + 0.004
0.0025 0.0004
t
CAVITY TO PERFORATION
(WIDTH DIRECTION)
F
3.50 0.05
0.138 0.002
CAVITY TO PERFORATION
(LENGTH DIRECTION)
P
2
2.00 0.05
0.079 0.002
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2012 Avago Technologies. All rights reserved. Obsoletes 5989-3747EN
AV02-1442EN - June 8, 2012
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