ATF-33143-BLKG [AGILENT]
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC, SC-70, 4 PIN;
| 型号： | ATF-33143-BLKG |
| 厂家： | 
AGILENT TECHNOLOGIES, LTD. |
| 描述： | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC, SC-70, 4 PIN 放大器 光电二极管 晶体管 |
| 文件： | 总18页 (文件大小：159K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ATF-33143 Low Noise
Pseudomorphic HEMT in a Surface
Mount Plastic Package
Data Sheet
Features
• Lead-free Option Available
• Low Noise Figure
Description
Surface Mount Package
SOT-343
• Excellent Uniformity in
Product Specifications
Agilent’s ATF-33143 is a high
dynamic range, low noise PHEMT
housed in a 4-lead SC-70 (SOT-343)
surface mount plastic package.
• 1600 micron Gate Width
• Low Cost Surface Mount
Small Plastic Package
SOT-343 (4 lead SC-70)
Based on its featured performance,
ATF-33143 is ideal for the first or
second stage of base station LNA
due to the excellent combination
of low noise figure and enhanced
linearity[1]. The device is also
suitable for applications in Wire-
less LAN, WLL/RLL, MMDS, and
other systems requiring super low
noise figure with good intercept in
the 450 MHz to 10 GHz frequency
range.
• Tape-and-Reel Packaging
Option Available
Pin Connections and
Package Marking
Specifications
1.9 GHz; 4V, 80 mA (Typ.)
DRAIN
SOURCE
• 0.5 dB Noise Figure
• 15 dB Associated Gain
SOURCE
GATE
• 22 dBm Output Power at
1 dB Gain Compression
• 33.5 dBm Output 3rd Order
Intercept
Note: Top View. Package marking
provides orientation and identification.
Note:
“3P” = Device code
“x” = Date code character. A new
character is assigned for each month, year.
1. From the same PHEMT FET family, the
smaller geometry ATF-34143 may also
be considered for the higher gain
performance, particularly in the higher
frequency band (1.8 GHz and up).
Applications
• Tower Mounted Amplifier,
Low Noise Amplifier and
Driver Amplifier for GSM/
TDMA/CDMA Base Stations
Attention:
•
LNA for Wireless LAN, WLL/
RLL and MMDS Applications
Observe precautions for
handling electrostatic
sensitive devices.
• General Purpose Discrete
PHEMT for other Ultra Low
Noise Applications
ESD Machine Model (Class A)
ESD Human Body Model (Class 1)
Refer to Agilent Application Note A004R:
Electrostatic Discharge Damage and Control.
2
ATF-33143 Absolute Maximum Ratings[1]
Notes:
Absolute
Maximum
1. Operation of this device above any one
of these parameters may cause
permanent damage.
2. Assumes DC quiesent conditions.
3. VGS = 0V
4. Source lead temperature is 25°C.
Derate 6 mW/°C for TL > 60°C.
5. Please refer to failure rates in reliability
section to assess the reliability impact
of running devices above a channel
temperature of 140°C.
6. Thermal resistance measured using
150°C Liquid Crystal Measurement
method.
Symbol
VDS
Parameter
Units
V
Drain - Source Voltage[2]
Gate - Source Voltage[2]
Gate Drain Voltage[2]
Drain Current[2]
5.5
-5
VGS
V
VGD
V
-5
[3]
IDS
mA
mW
dBm
°C
Idss
Pdiss
Pin max
TCH
Total Power Dissipation[4]
600
20
RF Input Power
Channel Temperature[5]
Storage Temperature
Thermal Resistance[6]
160
TSTG
θjc
°C
°C/W
-65 to 160
145
Product Consistency Distribution Charts[8, 9]
500
120
Cpk = 1.7
+0.6 V
Std = 0.05
100
400
300
200
100
0
80
0 V
+3 Std
-3 Std
60
40
20
0
–0.6 V
0
2
4
6
8
0.2
0.3
0.4
0.5
0.6
0.7 0.8
V
(V)
DS
NF (dB)
[7]
Figure 1. Typical Pulsed I-V Curves
(VGS = -0.2 V per step)
.
Figure 2. NF @ 2 GHz, 4 V, 80 mA.
LSL=0.2, Nominal=0.53, USL=0.8
100
80
120
100
80
Cpk = 1.21
Std = 0.94
Cpk = 2.3
Std = 0.2
60
-3 Std
+3 Std
-3 Std
+3 Std
60
40
20
0
40
20
0
31
33
35
29
37
13
14
15
GAIN (dB)
16
17
OIP3 (dBm)
Figure 3. OIP3 @ 2 GHz, 4 V, 80 mA.
LSL=30.0, Nominal=33.3, USL=37.0
Figure 4. Gain @ 2 GHz, 4 V, 80 mA.
LSL=13.5, Nominal=14.8, USL=16.5
Notes:
7. Under large signal conditions, VGS may
Future wafers allocated to this product
may have nominal values anywhere
within the upper and lower spec limits.
9. Measurements made on production test
board. This circuit represents a trade-off
between an optimal noise match and a
realizeable match based on production
test requirements. Circuit losses have
been de-embedded from actual
measurements.
swing positive and the drain current may
exceed Idss. These conditions are
acceptable as long as the maximum Pdiss
and Pin max ratings are not exceeded.
8. Distribution data sample size is 450
samples taken from 9 different wafers.
10. The probability of a parameter being
between 1σ is 68.3%, between 2σ is
95.4% and between 3σ is 99.7%.
3
ATF-33143 DC Electrical Specifications
TA = 25°C, RF parameters measured in a test circuit for a typical device
Symbol
Parameters and Test Conditions
Saturated Drain Current VDS = 1.5 V, VGS = 0 V mA 175 237
VDS = 1.5 V, IDS = 10% of Idss -0.65 -0.5 -0.35
VGS = -0.5 V, VDS = 4 V mA
VDS = 1.5 V, gm = Idss/VP mmho 360 440
Units Min. Typ.[2] Max.
305
[1]
Idss
[1]
VP
Pinchoff Voltage
V
Id
Quiescent Bias Current
Transconductance
—
80
—
—
[1]
gm
IGDO
Igss
Gate to Drain Leakage Current
Gate Leakage Current
VGD = 5 V
µA
µA
dB
1000
600
0.8
VGD = VGS = -4 V
—
42
f = 2 GHz VDS = 4 V, IDS = 80 mA
VDS = 4 V, IDS = 60 mA
0.5
0.5
NF
Ga
Noise Figure
f = 900 MHz VDS = 4 V, IDS = 80 mA
VDS = 4 V, IDS = 60 mA
dB
0.4
0.4
f = 2 GHz VDS = 4 V, IDS = 80 mA
VDS = 4 V, IDS = 60 mA
dB 13.5
dB
15
15
16.5
Associated Gain[3]
f = 900 MHz VDS = 4 V, IDS = 80 mA
VDS = 4 V, IDS = 60 mA
21
21
f = 2 GHz VDS = 4 V, IDS = 80 mA dBm 30
5 dBm Pout/Tone VDS = 4 V, IDS = 60 mA
33.5
32
Output 3rd Order
Intercept Point[3]
OIP3
P1dB
f = 900 MHz VDS = 4 V, IDS = 80 mA dBm
5 dBm Pout/Tone VDS = 4 V, IDS = 60 mA
32.5
31
f = 2 GHz VDS = 4 V, IDS = 80 mA dBm
VDS = 4 V, IDS = 60 mA
22
21
1 dB Compressed
Compressed Power[3]
f = 900 MHz VDS = 4 V, IDS = 80 mA dBm
VDS = 4 V, IDS = 60 mA
21
20
Notes:
1. Guaranteed at wafer probe level.
2. Typical value determined from a sample size of 450 parts from 9 wafers.
3. Measurements obtained using production test board described in Figure 5.
50 Ohm
Input
50 Ohm
Input
Output
Transmission
Line Including
Gate Bias T
(0.5 dB loss)
Matching Circuit
Γ_mag = 0.20
Γ_ang = 124°
(0.3 dB loss)
Transmission
Line Including
Drain Bias T
(0.5 dB loss)
DUT
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measure-
ments. This circuit represents a trade-off between an optimal noise match and a realizable match based on production test
requirements. Circuit losses have been de-embedded from actual measurements.
4
ATF-33143 Typical Performance Curves
40
30
20
10
0
40
30
20
10
0
2 V
3 V
4 V
2 V
3 V
4 V
0
20
40
60
(mA)
80
100 120
0
20
40
60
(mA)
80
100 120
I
I
DSQ
DSQ
Figure 6. OIP3, IIP3 vs. Bias[1] at
2 GHz.
Figure 7. OIP3, IIP3 vs. Bias[1] at
900 MHz.
25
20
15
10
25
20
15
10
2 V
3 V
4 V
2 V
3 V
4 V
5
0
5
0
0
20
40
60
(mA)
80
100 120
0
20
40
60
(mA)
80
100 120
I
I
DSQ
DSQ
Figure 8. P1dB vs. Bias[1,2] at 2 GHz.
Figure 9. P1dB vs. Bias[1,2] Tuned for NF
@ 4V, 80 mA at 900 MHz.
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.2
1.0
0.8
0.6
0.4
0.2
0
16
15
22
21
20
19
18
17
16
G
a
14
13
12
11
10
G
a
NF
NF
2 V
3 V
4 V
2 V
3 V
4 V
0
20
40
60
(mA)
80
100 120
0
20
40
60
(mA)
80
100 120
I
I
DSQ
DSQ
Figure 10. NF and Ga vs. Bias[1] at
2 GHz.
Figure 11. NF and Ga vs. Bias[1] at
900 MHz.
Notes:
1. Measurements made on a fixed tuned production test board that was tuned for optimal gain match with reasonable noise figure at 4V
80 mA bias. This circuit represents a trade-off between optimal noise match, maximum gain match and a realizable match based on
production test board requirements. Circuit losses have been de-embedded from actual measurements.
2. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease
depending on frequency and dc bias point. At lower values of IDSQ the device is running closer to class B as power output approaches
P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant
current source as is typically done with active biasing.
5
ATF-33143 Typical Performance Curves, continued
1.5
1.0
0.5
0
30
25
20
15
10
5
80 mA
60 mA
80 mA
60 mA
0
0
2
4
6
8
10
0
2
4
6
8
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 12. Fmin vs. Frequency and
Current at 4V.
Figure 13. Associated Gain vs.
Frequency and Current at 4V.
40
35
30
25
20
15
25
2.0
1.5
1.0
0.5
0
25°C
-40°C
85°C
25°C
-40°C
85°C
20
15
10
5
0
2000
4000
6000
8000
0
2
4
6
8
10
FREQUENCY (MHz)
FREQUENCY (GHz)
Figure 15. P1dB, OIP3 vs. Frequency
and Temp at VDS = 4V, IDS = 80 mA.
Figure 14. Fmin and Ga vs. Frequency
and Temp at VDS = 4V, IDS = 80 mA.
3.5
35
30
25
20
15
10
5
35
30
25
20
15
10
5
P
3.0
2.5
2.0
1.5
1.0
0.5
0
1dB
3
2
1
0
OIP3
Gain
NF
P
Gain
NF
1dB
OIP3
0
0
0
20
40
60
(mA)
80
100 120
0
20
40
60
(mA)
80
100 120
I
I
DSQ
DSQ
Figure 16. OIP3, P1dB, NF and Gain vs.
Bias[1,2] at 3.9 GHz.
Figure 17. OIP3, P1dB, NF and Gain vs.
Bias[1,2] at 5.8 GHz.
Notes:
1. Measurements made on a fixed tuned test fixture that was tuned for noise figure at 4V 80 mA bias. This circuit represents a trade-off
between optimal noise match, maximum gain match and a realizable match based on production test requirements. Circuit losses have
been de-embedded from actual measurements.
2. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease
depending on frequency and dc bias point. At lower values of Idsq the device is running closer to class B as power output approaches
P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant
current source as is typically done with active biasing.
6
ATF-33143 Typical Performance Curves, continued
25
20
15
10
5
25
20
15
10
5
0
0
0
20
40
60
80
100 120
0
20
40
60
80
100 120
I
(mA)
I
(mA)
DS
DS
Figure 19. P1dB vs. IDS Active Bias[1]
Tuned for NF @ 4V, 80 mA at 900 MHz.
Figure 18. P1dB vs. IDS Active Bias[1]
Tuned for NF @ 4V, 80 mA at 2 GHz.
Note:
1. Measurements made on a fixed tuned test board that was tuned for optimal gain match with reasonable noise figure at 4V 80 mA bias.
This circuit represents a trade-off between an optimal noise match, maximum gain match and a realizable match based on production
test board requirements. Circuit losses have been de-embedded from actual measurements.
7
ATF-33143 Power Parameters Tuned for Max P1dB, VDS = 4 V, IDSQ = 80 mA
Freq
(GHz) (dBm)
P1dB
Id
(mA)
G1dB
(dB)
PAE1dB
(%)
P3dB
(dBm)
Id
(mA)
PAE3dB Γ Out_mag Γ Out_ang
(%)
(Mag.)
(°)
0.9
1.5
1.8
2.0
4.0
6.0
20.7
21.2
21.1
21.6
23.0
24.0
89
91
80
81
97
23.2
20.7
19.2
18.1
11.9
5.9
33
36
40
44
48
36
23.2
23.8
23.0
23.2
24.6
25.2
102
116
94
89
135
136
51
51
52
57
48
36
0.39
0.43
0.43
0.42
0.40
0.37
160
165
170
174
-150
-124
130
70
P
Gain
PAE
out
60
50
40
30
20
10
0
-10
-20
-40
-30
-20
-10
0
10
20
P
(dBm)
in
Figure 20. Swept Power Tuned for
Max P
1dB
=4V, I
V
DS
= 80 mA, 2 GHz.
DSQ
Notes:
1. Measurements made on ATN LP1 power load pull system.
2. Quicescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease
depending on frequency and dc bias point. At lower values of IDSQ the device is running closer to class B as power output approaches
P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant
current source as is typically done with active biasing.
3. PAE (%) = ((Pout – Pin) / Pdc) X 100
4. Gamma out is the reflection coefficient of the matching circuit presented to the output of the device.
8
ATF-33143 Typical Scattering Parameters, VDS = 2V, IDS = 40 mA
Freq.
(GHz) Mag.
S11
S21
S12
S22
Mag.
MSG/MAG
(dB)
Ang.
dB
Mag. Ang.
dB
Mag. Ang.
Ang.
0.5
0.8
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
0.88
0.79
0.78
0.75
0.74
0.74
0.74
0.75
0.75
0.76
0.78
0.80
0.83
0.83
0.86
0.88
0.90
0.91
0.91
0.92
0.93
0.94
0.93
-72.70
-112.10
-119.80
-149.60
-162.80
-170.10
172.30
159.10
137.00
117.20
98.10
80.10
64.50
50.30
36.30
21.50
7.20
-5.00
22.08 12.81 134.40
-27.02
-24.13
-23.93
-22.57
-22.14
-21.84
-21.24
-20.68
-19.59
-18.56
-17.83
-17.42
-17.29
-17.08
-16.59
-16.53
-16.81
-17.38
-17.78
-18.00
-17.87
-18.07
-18.79
0.045
0.062
0.064
0.075
0.079
0.082
0.088
0.094
0.106
0.119
0.129 -12.80
0.135 -26.00
0.137 -37.30
0.140 -46.80
0.148 -58.30
0.149 -71.30
0.144 -83.90
0.135 -95.60
0.129 -103.90
0.126 -113.70
0.128 -124.20
0.125 -136.40
0.115 -145.10
54.50
40.70
38.00
29.80
26.80
24.90
20.80
17.10
9.30
0.28
0.37
0.38
0.42
0.45
0.46
0.49
0.51
0.53
0.54
0.54
0.57
0.60
0.63
0.65
0.68
0.72
0.75
0.77
0.80
0.82
0.83
0.85
-118.70
-149.90
-155.40
-176.20
174.70
169.40
160.10
152.10
139.20
124.70
108.00
90.40
74.80
62.70
50.90
37.40
21.40
5.80
-5.70
24.54
21.81
21.41
19.34
18.40
17.80
16.56
15.46
13.73
11.44
9.80
8.35
7.43
6.45
6.41
6.14
5.64
4.60
3.64
19.46
18.86
16.11
14.70
13.84
11.98
10.37
7.95
6.20
4.69
3.12
1.68
9.41 111.20
8.86 106.50
6.44
5.47
4.94
3.98
3.31
2.50
2.05
1.73
1.44
1.22
1.07
0.96
0.85
0.74
88.30
79.80
74.80
63.00
53.10
35.00
17.20
-1.30
-19.30
-35.20
-49.30
-64.30
-80.20
-95.80
-0.70
9.0
0.48
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
-0.46
-1.50
-2.70
-4.24
-5.49
-6.42
-7.26
-8.20
-9.51
0.62 -110.20
0.54 -121.90
0.49 -134.20
0.44 -146.80
0.40 -160.40
0.34 -171.00
-15.50
-27.50
-40.50
-52.30
-61.20
-15.80
-25.70
-37.90
-49.70
3.44
3.22
3.11
1.79
ATF-33143 Typical Noise Parameters
VDS = 2V, IDS = 40 mA
40
30
20
10
0
Freq.
GHz
Fmin
dB
Γopt
Rn/50
-
Ga
dB
Mag.
Ang.
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.26
0.30
0.31
0.34
0.34
0.39
0.51
0.53
0.61
0.70
0.82
0.93
1.04
1.12
1.21
0.45
0.38
0.36
0.31
0.26
0.27
0.28
0.32
0.41
0.49
0.53
0.59
0.62
0.67
0.69
26.00
42.20
44.80
69.50
93.60
0.07
0.07
0.07
0.06
0.04
0.05
0.03
0.03
0.04
0.06
0.11
0.23
0.38
0.59
0.77
24.74
21.02
20.36
17.40
16.50
15.82
14.59
13.13
11.27
9.92
8.70
7.71
6.69
6.04
MSG
MAG
108.60
150.70
165.60
-162.10
-136.80
-113.60
-91.50
-72.60
-55.90
-42.20
2
|S
|
21
-10
0
5
10
FREQUENCY (GHz)
15
20
Figure 21. MSG/MAG and |S21|2 vs.
Frequency at 2V, 40 mA.
5.73
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system.
From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.
9
ATF-33143 Typical Scattering Parameters, VDS = 3V, IDS = 40 mA
Freq.
(GHz) Mag.
S11
S21
S12
S22
Mag. Ang.
MSG/MAG
(dB)
Ang.
dB
Mag. Ang.
dB
Mag. Ang.
0.5
0.8
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
0.87
0.78
0.77
0.74
0.73
0.73
0.73
0.74
0.74
0.75
0.77
0.79
0.82
0.83
0.86
0.88
0.90
0.91
0.91
0.92
0.93
0.94
0.93
-72.20
-111.60
-119.30
-149.00
-162.20
-169.50
172.90
159.70
137.60
117.70
98.60
80.60
64.90
50.70
36.60
21.90
7.50
-4.80
22.51 13.42 134.40
-27.20
-24.27
-24.06
-22.79
-22.34
-22.13
-21.41
-20.91
-19.79
-18.80
-17.99
-17.58
-17.44
-17.13
-16.64
-16.58
-16.81
-17.38
-17.78
-17.93
-17.87
-18.00
-18.72
0.044
0.061
0.063
0.073
0.077
0.079
0.086
0.091
0.103
0.115
0.126 -11.90
0.132 -24.90
0.134 -36.00
0.139 -45.50
0.147 -57.00
0.148 -70.10
0.144 -82.70
0.135 -94.40
0.129 -103.00
0.127 -112.80
0.128 -123.40
0.126 -135.70
0.116 -144.30
54.40
40.60
37.90
29.80
26.90
25.00
21.10
17.50
10.00
0.00
0.27
0.35
0.36
0.40
0.42
0.43
0.46
0.48
0.50
0.51
0.52
0.55
0.57
0.60
0.63
0.66
0.70
0.73
0.76
0.79
0.81
0.82
0.84
-109.80
-143.70
-150.10
-172.10
178.40
172.90
163.10
154.80
141.20
126.50
109.80
92.10
76.20
64.00
52.10
38.60
22.60
6.80
-5.00
24.84
22.09
21.67
19.64
18.71
18.16
16.85
15.80
14.06
11.53
9.99
8.57
7.64
6.69
6.65
6.38
6.00
4.90
3.90
19.88
19.28
16.52
15.11
14.24
12.38
10.78
8.37
6.63
5.10
3.54
2.10
9.87 111.20
9.26 106.50
6.73
5.72
5.17
4.17
3.46
2.62
2.15
1.80
1.51
1.28
1.12
1.00
0.89
0.77
88.30
79.90
74.80
63.10
53.30
35.20
17.30
-1.30
-19.50
-35.50
-49.60
-64.90
-81.00
-96.80
9.0
0.92
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
-0.04
-1.11
-2.32
-3.86
-5.11
-6.05
-6.95
-7.91
-9.25
0.64 -111.40
0.56 -123.30
0.50 -135.90
0.45 -148.70
0.41 -162.30
0.35 -172.90
-15.40
-27.40
-40.40
-52.30
-61.30
-15.10
-25.10
-37.30
-49.10
3.71
3.48
3.41
1.94
ATF-33143 Typical Noise Parameters
VDS = 3V, IDS = 40 mA
40
30
Freq.
GHz
Fmin
dB
Γopt
Rn/50
-
Ga
dB
Mag.
Ang.
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.24
0.29
0.31
0.37
0.34
0.38
0.51
0.52
0.58
0.68
0.80
0.89
1.01
1.09
1.18
0.45
0.38
0.34
0.28
0.25
0.25
0.28
0.31
0.40
0.46
0.54
0.57
0.61
0.65
0.68
28.40
40.90
42.60
66.30
90.10
105.80
147.40
162.80
-165.20
-138.50
-115.00
-92.50
-72.80
-56.40
-42.60
0.07
0.07
0.07
0.07
0.05
0.05
0.03
0.03
0.03
0.05
0.09
0.20
0.35
0.53
0.69
25.26
21.26
20.50
17.67
16.57
15.93
14.72
13.29
11.45
10.05
8.97
MSG
20
10
0
MAG
2
|S
|
21
-10
5
10
FREQUENCY (GHz)
15
0
20
Figure 22. MSG/MAG and |S21|2 vs.
Frequency at 3V, 40 mA.
7.90
6.90
6.26
5.99
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system.
From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.
10
ATF-33143 Typical Scattering Parameters, VDS = 3V, IDS = 60 mA
Freq.
S11
S21
S12
S22
Mag. Ang.
MSG/MAG
(dB)
(GHz) Mag.
Ang.
dB
Mag. Ang.
dB
Mag. Ang.
0.5
0.8
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
0.87
0.78
0.77
0.74
0.73
0.73
0.73
0.74
0.75
0.75
0.77
0.79
0.82
0.83
0.86
0.88
0.90
0.91
0.91
0.92
0.93
0.94
0.93
-75.30
22.95 14.06 133.00
20.22 10.26 110.00
-28.18
-25.19
-24.89
-23.37
-22.87
-22.53
-21.76
-21.07
-19.79
-18.68
-17.88
-17.42
-17.29
-17.03
-16.49
-16.43
-16.71
-17.27
-17.72
-17.86
-17.72
-17.92
-18.64
0.039
0.055
0.057
0.068
0.072
0.075
0.082
0.089
0.103
0.117
0.128
0.135 -23.20
0.137 -34.60
0.141 -44.50
0.150 -56.20
0.151 -69.40
0.146 -82.10
0.137 -94.00
0.130 -102.70
0.128 -112.40
0.130 -123.00
0.127 -135.30
0.117 -144.00
55.10
42.60
40.50
33.50
30.80
29.00
25.10
21.40
13.20
2.80
0.27
0.36
0.37
0.41
0.43
0.44
0.47
0.50
0.52
0.52
0.53
0.56
0.59
0.62
0.65
0.68
0.71
0.74
0.77
0.80
0.82
0.82
0.84
-124.20
-153.90
-158.80
-178.70
172.60
167.50
158.50
151.00
138.60
124.40
107.80
90.20
74.70
62.70
50.90
37.40
21.40
5.80
-6.10
25.57
22.71
22.24
20.07
19.11
18.49
17.17
16.00
14.15
11.53
10.03
8.66
7.75
6.81
6.72
6.46
6.04
4.99
3.98
3.78
-114.70
-122.30
-151.60
-164.60
-171.80
171.00
158.10
136.40
116.90
97.80
79.90
64.50
50.40
36.40
21.60
7.30
-5.00
-15.50
-27.50
-40.60
-52.30
-61.40
19.59
16.78
15.35
14.47
12.60
10.99
8.56
6.80
5.28
3.71
2.26
9.56 105.50
6.91
5.87
5.30
4.27
3.54
2.68
2.19
1.84
1.53
1.30
1.13
1.02
0.90
0.78
87.60
79.30
74.40
62.80
53.10
35.40
17.70
-0.60
-18.60
-34.40
-48.50
-63.50
-79.50
-95.10
-9.70
9.0
1.07
0.12
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
-0.94
-2.13
-3.67
-4.93
-5.85
-6.70
-7.61
-8.97
0.66 -109.70
0.57 -121.40
0.51 -133.90
0.46 -146.60
0.42 -160.30
0.36 -170.90
-15.80
-25.80
-37.90
-49.70
3.54
3.45
2.08
ATF-33143 Typical Noise Parameters
VDS = 3V, IDS = 60 mA
40
30
Freq.
GHz
Fmin
dB
Γopt
Rn/50
-
Ga
dB
Mag.
Ang.
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.23
0.28
0.29
0.34
0.34
0.38
0.52
0.53
0.61
0.68
0.83
0.91
1.04
1.09
1.13
0.43
0.35
0.35
0.26
0.23
0.22
0.25
0.30
0.39
0.47
0.52
0.58
0.61
0.66
0.70
29.20
42.40
45.00
68.80
93.30
109.70
150.60
167.50
-160.30
-134.70
-112.10
-89.70
-71.50
-54.80
-41.40
0.06
0.06
0.07
0.06
0.04
0.05
0.03
0.03
0.04
0.06
0.11
0.22
0.36
0.56
0.73
25.64
21.62
20.87
17.84
16.89
16.24
14.93
13.52
11.65
10.28
9.09
MSG
20
10
0
MAG
2
|S
|
21
-10
5
10
FREQUENCY (GHz)
15
0
20
Figure 23. MSG/MAG and |S21|2 vs.
Frequency at 3V, 60 mA.
8.09
7.07
6.43
6.15
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system.
From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.
11
ATF-33143 Typical Scattering Parameters, VDS = 4V, IDS = 40 mA
Freq.
S11
S21
S12
S22
Mag. Ang.
MSG/MAG
(dB)
(GHz) Mag.
Ang.
dB Mag. Ang.
dB
Mag. Ang.
0.5
0.8
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
0.87
0.78
0.77
0.73
0.72
0.72
0.72
0.73
0.74
0.75
0.77
0.79
0.82
0.83
0.86
0.88
0.90
0.91
0.91
0.92
0.93
0.94
0.93
-72.50
22.73 13.74 134.30
20.07 10.09 111.00
-27.39
-24.42
-24.20
-22.90
-22.44
-22.23
-21.58
-21.07
-19.93
-18.92
-18.11
-17.68
-17.50
-17.23
-16.69
-16.58
-16.81
-17.32
-17.78
-17.93
-17.79
-18.00
-18.72
0.043
0.060
0.062
0.072
0.076
0.078
0.084
0.089
0.101
0.113
0.124 -11.20
0.130 -24.10
0.133 -35.10
0.137 -44.60
0.146 -56.10
0.148 -69.10
0.144 -81.70
0.136 -93.50
0.129 -102.10
0.127 -112.20
0.129 -122.80
0.126 -135.10
0.116 -143.80
54.10
40.40
37.70
29.80
26.90
25.00
21.20
17.80
10.40
0.70
0.26
0.33
0.34
0.38
0.40
0.41
0.44
0.46
0.48
0.49
0.50
0.53
0.56
0.59
0.62
0.65
0.69
0.72
0.76
0.79
0.81
0.82
0.84
-104.90
-140.20
-147.10
-169.70
-179.30
175.10
165.10
156.50
142.50
127.70
111.00
93.40
77.30
64.90
53.00
39.50
23.50
7.50
-4.30
25.04
22.26
21.82
19.78
18.84
18.29
17.03
15.98
14.23
11.54
10.07
8.68
7.77
6.80
6.78
6.55
6.13
5.03
4.06
3.87
-111.80
-119.40
-149.10
-162.20
-169.50
173.00
159.80
137.70
117.90
98.80
80.80
65.10
50.90
36.80
22.00
7.60
-4.70
19.46
16.69
15.28
14.41
12.55
10.95
8.54
6.80
5.28
3.72
2.29
9.43 106.40
6.85
5.82
5.26
4.24
3.53
2.68
2.19
1.84
1.54
1.30
1.14
1.02
0.90
0.78
88.20
79.80
74.70
63.00
53.20
35.10
17.10
-1.60
-19.80
-35.90
-50.20
-65.60
-81.80
-97.60
9.0
1.10
0.15
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
-0.93
-2.14
-3.69
-4.97
-5.92
-6.85
-7.83
-9.19
0.66 -112.40
0.57 -124.50
0.51 -137.30
0.46 -150.10
0.41 -163.80
0.35 -174.60
-15.30
-27.20
-40.30
-52.20
-61.20
-14.60
-24.50
-36.80
-48.70
3.62
3.54
2.05
ATF-33143 Typical Noise Parameters
VDS = 4V, IDS = 40 mA
40
30
Freq.
GHz
Fmin
dB
Γopt
Rn/50
-
Ga
dB
Mag.
Ang.
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.30
0.33
0.34
0.38
0.37
0.40
0.53
0.54
0.60
0.68
0.82
0.89
1.00
1.07
1.16
0.44
0.36
0.33
0.26
0.25
0.23
0.27
0.31
0.38
0.46
0.49
0.56
0.60
0.66
0.68
31.50
42.70
44.50
68.70
90.70
106.40
145.80
162.00
-165.30
-138.80
-115.40
-93.20
-73.10
-56.60
-42.80
0.08
0.07
0.08
0.06
0.05
0.05
0.04
0.03
0.04
0.05
0.09
0.19
0.33
0.50
0.65
25.59
21.43
20.63
17.72
16.65
15.99
14.70
13.32
11.47
10.17
8.93
MSG
20
10
0
MAG
2
|S
|
21
-10
5
10
FREQUENCY (GHz)
15
0
20
Figure 24. MSG/MAG and |S21|2 vs.
Frequency at 4V, 40 mA.
7.99
7.00
6.40
6.11
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system.
From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.
12
ATF-33143 Typical Scattering Parameters, VDS = 4V, IDS = 60 mA
Freq.
S11
S21
S12
S22
Mag. Ang.
MSG/MAG
(dB)
(GHz) Mag.
Ang.
dB
Mag. Ang.
dB
Mag. Ang.
0.5
0.8
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
0.86
0.77
0.76
0.73
0.72
0.72
0.72
0.73
0.74
0.75
0.77
0.79
0.82
0.83
0.86
0.88
0.90
0.91
0.91
0.92
0.93
0.94
0.93
-75.60
23.20 14.45 132.90
20.45 10.53 109.80
-28.18
-25.35
-25.04
-23.61
-22.97
-22.73
-21.94
-21.31
-20.00
-18.86
-17.99
-17.52
-17.39
-17.08
-16.54
-16.48
-16.71
-17.27
-17.65
-17.79
-17.72
-17.92
-18.56
0.039
0.054
0.056
0.066
0.071
0.073
0.080
0.086
0.100
0.114
0.126
0.133 -22.30
0.135 -33.60
0.140 -43.40
0.149 -55.20
0.150 -68.40
0.146 -81.10
0.137 -92.90
0.131 -101.60
0.129 -111.60
0.130 -122.20
0.127 -134.70
0.118 -143.30
54.80
42.20
40.20
33.20
30.60
28.90
25.10
21.60
13.70
3.40
0.26
0.34
0.35
0.39
0.41
0.42
0.45
0.47
0.49
0.50
0.51
0.54
0.57
0.60
0.63
0.66
0.70
0.73
0.76
0.79
0.81
0.82
0.84
-118.50
-150.00
-155.50
-176.10
175.00
169.80
160.60
152.70
139.90
125.70
109.10
91.60
75.90
63.70
52.00
38.50
22.50
6.70
-5.20
25.69
22.90
22.42
20.29
19.26
18.70
17.36
16.24
13.79
11.57
10.15
8.80
7.88
6.92
6.92
6.69
6.27
5.14
4.12
3.90
-115.00
-122.50
-151.80
-164.60
-171.80
171.00
158.20
136.50
117.00
98.00
80.20
64.70
50.60
36.60
21.80
7.50
-4.80
19.80
16.98
15.55
14.66
12.79
11.17
8.76
7.00
5.48
3.92
2.48
9.77 105.30
7.06
5.99
5.41
4.36
3.62
2.74
2.24
1.88
1.57
1.33
1.16
1.04
0.92
0.80
87.50
79.20
74.20
62.70
53.00
35.20
17.50
-1.00
-19.00
-34.90
-49.10
-64.30
-80.40
-96.20
-8.90
9.0
1.29
0.34
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
-0.72
-1.94
-3.48
-4.73
-5.68
-6.56
-7.54
-8.87
0.67 -110.80
0.58 -122.80
0.52 -135.40
0.47 -148.30
0.42 -162.10
0.36 -172.80
-15.40
-27.30
-40.40
-52.20
-61.20
-15.20
-25.10
-37.30
-49.20
3.72
3.59
2.19
ATF-33143 Typical Noise Parameters
VDS = 4V, IDS = 60 mA
40
30
20
10
0
Freq.
GHz
Fmin
dB
Γopt
Rn/50
-
Ga
dB
Mag.
Ang.
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.29
0.33
0.34
0.38
0.39
0.42
0.47
0.51
0.63
0.72
0.82
0.93
1.03
1.13
1.22
0.42
0.33
0.32
0.26
0.22
0.22
0.25
0.29
0.39
0.46
0.51
0.57
0.61
0.66
0.69
31.40
44.70
48.00
71.90
94.00
0.08
0.07
0.07
0.06
0.05
0.05
0.03
0.03
0.04
0.06
0.11
0.21
0.37
0.55
0.72
25.91
21.80
21.00
18.14
16.96
16.29
14.95
13.58
11.74
10.36
9.17
MSG
MAG
109.70
149.40
166.80
-160.60
-135.30
-112.40
-90.90
-71.80
-55.50
-41.80
2
|S
|
21
-10
0
5
10
FREQUENCY (GHz)
15
20
Figure 25. MSG/MAG and |S21|2 vs.
Frequency at 4V, 60 mA.
8.18
7.19
6.56
6.29
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system.
From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.
13
ATF-33143 Typical Scattering Parameters, VDS = 4V, IDS = 80 mA
Freq.
S11
S21
S12
S22
Mag. Ang.
MSG/MAG
(dB)
(GHz) Mag.
Ang.
dB
Mag. Ang.
dB
Mag. Ang.
0.5
0.8
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
0.86
0.77
0.76
0.73
0.72
0.72
0.72
0.73
0.74
0.75
0.77
0.79
0.82
0.83
0.86
0.88
0.90
0.91
0.91
0.92
0.93
0.94
0.93
-77.20
23.39 14.76 132.20
20.60 10.71 109.20
-28.82
-25.86
-25.49
-23.86
-23.31
-22.95
-22.03
-21.39
-20.00
-18.86
-17.99
-17.47
-17.34
-17.03
-16.49
-16.38
-16.66
-17.21
-17.59
-17.79
-17.65
-17.85
-18.56
0.036
0.051
0.053
0.064
0.068
0.071
0.079
0.085
0.100
0.114
0.126
0.134 -21.30
0.136 -32.80
0.141 -42.80
0.150 -54.60
0.152 -67.80
0.147 -80.60
0.138 -92.60
0.132 -101.10
0.129 -111.20
0.131 -121.90
0.128 -134.30
0.118 -143.10
55.30
43.40
41.70
35.20
32.70
31.00
27.20
23.50
15.30
4.80
0.26
0.34
0.36
0.39
0.41
0.42
0.45
0.48
0.50
0.51
0.52
0.55
0.58
0.61
0.63
0.66
0.70
0.73
0.76
0.79
0.81
0.82
0.84
-125.40
-154.80
-159.50
-179.10
172.40
167.30
158.50
151.00
138.80
124.80
108.40
90.90
75.40
63.30
51.60
38.10
22.10
6.40
-5.00
26.13
23.22
22.72
20.48
19.50
18.87
17.47
16.34
13.59
11.56
10.17
8.84
7.93
6.98
6.96
6.73
6.26
5.21
4.20
3.98
-116.60
-124.00
-153.00
-165.80
-172.90
170.10
157.40
136.00
116.70
97.70
80.00
64.50
50.50
36.50
21.70
7.40
-4.80
19.93
17.09
15.66
14.77
12.89
11.27
8.84
7.09
5.57
4.00
2.55
9.91 104.80
7.15
6.06
5.47
4.41
3.66
2.77
2.26
1.90
1.58
1.34
1.17
1.05
0.93
0.81
87.10
78.90
74.00
62.50
53.00
35.30
17.70
-0.70
-18.70
-34.50
-48.70
-63.80
-79.90
-95.60
-7.80
9.0
1.36
0.43
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
-0.65
-1.85
-3.39
-4.64
-5.57
-6.46
-7.40
-8.75
0.68 -110.20
0.59 -122.00
0.53 -134.80
0.47 -147.60
0.43 -161.40
0.36 -172.10
-15.40
-27.30
-40.40
-52.20
-61.20
-15.40
-25.30
-37.50
-49.30
3.73
3.65
2.24
ATF-33143 Typical Noise Parameters
VDS = 4V, IDS = 80 mA
40
30
20
10
0
Freq.
GHz
Fmin
dB
Γopt
Rn/50
-
Ga
dB
Mag.
Ang.
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.30
0.35
0.35
0.40
0.42
0.45
0.49
0.55
0.68
0.75
0.90
1.00
1.12
1.19
1.33
0.42
0.32
0.32
0.23
0.20
0.19
0.23
0.28
0.38
0.48
0.52
0.57
0.62
0.67
0.69
34.50
46.40
50.40
74.80
98.80
0.08
0.07
0.07
0.06
0.05
0.05
0.04
0.03
0.04
0.07
0.13
0.25
0.43
0.65
0.85
26.23
21.96
21.16
18.47
17.18
16.48
15.09
13.70
11.85
10.49
9.27
MSG
MAG
114.10
153.70
171.50
-156.70
-133.30
-110.70
-89.60
-70.80
-54.60
-40.80
2
|S
|
21
-10
0
5
10
FREQUENCY (GHz)
15
20
Figure 26. MSG/MAG and |S21|2 vs.
Frequency at 4V, 80 mA.
8.27
7.28
6.66
6.31
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system.
From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.
14
presented with Γo. If the reflec-
tion coefficient of the matching
network is other than Γo, then the
noise figure of the device will be
greater than Fmin based on the
following equation.
Typically for FETs, the higher Γo
usually infers that an impedance
much higher than 50Ω is required
for the device to produce Fmin. At
VHF frequencies and even lower
L Band frequencies, the required
impedance can be in the vicinity
of several thousand ohms.
Matching to such a high imped-
ance requires very hi-Q compo-
nents in order to minimize circuit
losses. As an example at 900 MHz,
when airwwound coils (Q>100)
are used for matching networks,
the loss can still be up to 0.25 dB
which will add directly to the
Noise Parameter
Applications Information
Fmin values at 2 GHz and higher
are based on measurements while
the Fmins below 2 GHz have been
extrapolated. The Fmin values are
based on a set of 16 noise figure
measurements made at 16
different impedances using an
ATN NP5 test system. From these
measurements, a true Fmin is
calculated. Fmin represents the
true minimum noise figure of the
device when the device is pre-
sented with an impedance
matching network that trans-
forms the source impedance,
typically 50Ω, to an impedance
represented by the reflection
coefficient Γo. The designer must
design a matching network that
will present Γo to the device with
minimal associated circuit losses.
The noise figure of the completed
amplifier is equal to the noise
figure of the device plus the
NF = Fmin + 4 Rn
|Γs – Γo | 2
Zo (|1 + Γo|2)(1–Γs|2)
Where Rn/Zo is the normalized
noise resistance, Γo is the opti-
mum reflection coefficient
required to produce Fmin and Γs is
the reflection coefficient of the
source impedance actually
presented to the device. The
losses of the matching networks
are non-zero and they will also
add to the noise figure of the
device creating a higher amplifier
noise figure. The losses of the
matching networks are related to
the Q of the components and
associated printed circuit board
loss. Γo is typically fairly low at
higher frequencies and increases
as frequency is lowered. Larger
gate width devices will typically
have a lower Γo as compared to
narrower gate width devices.
noise figure of the device. Using
muiltilayer molded inductors with
Qs in the 30 to 50 range results in
additional loss over the airwound
coil. Losses as high as 0.5 dB or
greater add to the typical 0.15 dB
F
min of the device creating an
amplifier noise figure of nearly
0.65 dB. A discussion concerning
calculated and measured circuit
losses and their effect on ampli-
fier noise figure is covered in
Agilent Application 1085.
losses of the matching network
preceding the device. The noise
figure of the device is equal to
Fmin only when the device is
Reliability Data
Nominal Failures per million (FPM)
for different durations
90% confidence Failures per million (FPM)
for different durations
Channel
Temperature
(oC)
(FITs) 1 year 5 year 10 year 30 year (FITs) 1 year 5 year 10 year 30 year
1000
1000
hours
hours
100
125
140
150
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
2
<0.1
<0.1
<0.1
140
<0.1
<0.1
160
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
<0.1
0.3
<0.1
<0.1
6
<0.1
<0.1
160
<0.1
11
9.3K
131K
26K
780
8800
160
<0.1
<0.1
<0.1
4400
920
21K
370K
<0.1
21
67
24K
120K
850K
520K
180
450K
830K
1000K
53K
590K
1000K
NOT
recommended
Predicted failures with temperature extrapolated from failure distribution and activation energy data of
higher temperature operational life STRIFE of PHEMT process
15
ATF-33143 Die Model
Statz Model
MESFETM1
NFET=yes
PFET=no
Vto=–0.95
Beta=0.48
Lambda=0.09
Alpha=4
B=0.8
Tnom=27
Idstc=
Vbi=0.7
Tau=
Cgs=1.6 pF
Gdcap=3
Cgd=0.32 pF
Rgd=
Rc=62.5
Gsfwd=1
Gsrev=0
Gdfwd=1
Gdrev=0
Vjr=1
Taumd1=no
Fnc=1E6
R=0.17
C=0.2
Tqm=
P=0.65
wVgfwd=
wBvgs=
wBvgd=
wBvds=
wldsmax=
wPmax=
Al lParams=
Vmax=
Fc=
Is=1 nA
Ir=1 nA
Imax=0.1
Xti=
Rd=.125
Rg=1
Rs=0.0625
Ld=0.00375 nH
Lg-0.00375 nH
Ls=0.00125 nH
Cds=0.08 pF
Crf=0.1
N=
Betatce=
Delta1=0.2
Delta2=
Eg=
Vbr=
Vtotc=
Rin=
Gscap=3
This model can be used as a
the measured data in this data
sheet. For future improvements
Agilent reserves the right to
change these models without
prior notice.
design tool. It has been tested on
MDS for various specifications.
However, for more precise and
accurate design, please refer to
ATF-33143 Model
INSIDE Package
Var
VIA2
V3
VAR
Ean
VAR1
TLINP
TL1
TLINP
TL2
D=20.0 mil
H=25.0 mil
T=0.15 mil
Rho=1.0
K=5
Z2=85
Z1=30
Z=Z2/2 Ohm
L=20 0 mil
K=K
Z=Z2/2 Ohm
L=20 0 mil
K=K
W=40.0 mil
C
C1
C=0.1 pF
A=D 0000
F=1 GHz
TanD=0.001
A=0.0000
F=1 GHz
TanD=0.001
GATE
SOURCE
L
L
Port
G
TLINP
TL7
TLINP
TL8
TLINP
TL4
TLINP
TL3
Port
S2
L6
L1
L=0.2 nH
R=0.001
L=0.6 nH
R=0.001
Num=1
Z=Z2/2 Ohm Z=Z1 Ohm
VIA2
VIA2
Z=Z1 Ohm Z=Z2 Ohm
Num=4
L=5.0 mil
K=K
L=15 mil
K=1
A=0.0000
F=1 GHz
V1
V4
L=15 mil
K=1
L=25 mil
K=K
A=0.000
F=1 GHz
GaAsFET
D=20 mil
H=25.0 mil
T=0.15 mil
Rho=1.0
W=40 mil
D=20.0 mil
H=25.0 mil
T=0.15 mil
Rho=1.0
W=40.0 mil
C
C2
C=0.11 pF
A=0.0000
F=1 GHz
FET1
A=0.000
F=1 GHz
Model=MESFETN1
Mode=nonlinear
TanD=0.001 TanD=0.001
DRAIN
TanD=0.001 TanD=0.001
SOURCE
L
L7
C=0.6 nH
R=D 001
TLINP
TL5
TLINP
TL6
Port
D
Num=4
L
L4
L=0.2 nH
R=0.001
Port
S1
Num=2
TLINPTL9
Z=Z2 Ohm
L=10.0 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
Z=Z2 Ohm Z=Z1 Ohm
L=26.0 mil L=15 mil
TLINP
TL10
MSub
VIA2
V2
D=20.0 mil
H=25.0 mil
T=0.15 mil
Rho=1.0
W=40.0 mil
K=K
K=1
A=0.0000
F=1 GHz
Z=Z1 Ohm
L=15 mil
K=1
MSUB
A=0.0000
F=1 GHz
MSub1
H=25.0 mil
Er=9.6
TanD=0.001 TanD=0.001
A=0.000
F=1 GHz
TanD=0.001
Mur=1
Cond=1 DE+50
Hu=3.9e+0.34 mil
T=0.15 mil
TanD=D
Rough=D mil
16
Part Number Ordering Information
No. of
Part Number
ATF-33143-TR1
ATF-33143-TR2
ATF-33143-BLK
ATF-33143-TR1G
ATF-33143-TR2G
ATF-33143-BLKG
Devices
Container
7" Reel
3000
10000
100
13" Reel
antistatic bag
7" Reel
3000
10000
100
13" Reel
antistatic bag
Note: For lead-free option, the part number will have the
character “G” at the end.
Package Dimensions
SC-70 4L/SOT-343
1.30 (.051)
BSC
HE
E
1.15 (.045) BSC
b1
D
A
A2
A1
b
C
L
DIMENSIONS (mm)
SYMBOL
MIN.
1.15
1.85
1.80
0.80
0.80
0.00
0.25
0.55
0.10
0.10
MAX.
1.35
E
D
2.25
2.40
1.10
1.00
0.10
0.40
0.70
0.20
0.46
HE
A
NOTES:
1. All dimensions are in mm.
2. Dimensions are inclusive of plating.
3. Dimensions are exclusive of mold flash & metal burr.
4. All specifications comply to EIAJ SC70.
5. Die is facing up for mold and facing down for trim/form,
ie: reverse trim/form.
A2
A1
b
b1
c
L
6. Package surface to be mirror finish.
17
Device Orientation
Recommended PCB Pad
Layout for Agilent's
REEL
SC70 4L/SOT-343 Products
1.30
0.051
CARRIER
TAPE
1.00
0.039
USER
FEED
DIRECTION
2.00
0.079
0.60
0.024
COVER TAPE
TOP VIEW
4 mm
END VIEW
0.9
0.035
8 mm
3Px
3Px
3Px
3Px
1.15
0.045
mm
inches
Dimensions in
Tape Dimensions and Product Orientation
For Outline 4T
P
P
D
2
P
0
E
F
W
C
D
1
t
(CARRIER TAPE THICKNESS)
T (COVER TAPE THICKNESS)
t
1
K
10° MAX.
10° MAX.
0
A
B
0
0
DESCRIPTION
SYMBOL
SIZE (mm)
2.40 0.10
2.40 0.10
1.20 0.10
4.00 0.10
1.00 + 0.25
SIZE (INCHES)
CAVITY
LENGTH
WIDTH
DEPTH
PITCH
A
B
K
P
D
0.094 0.004
0.094 0.004
0.047 0.004
0.157 0.004
0.039 + 0.010
0
0
0
BOTTOM HOLE DIAMETER
1
0
PERFORATION
DIAMETER
PITCH
POSITION
D
1.55 0.10
4.00 0.10
1.75 0.10
0.061 + 0.002
0.157 0.004
0.069 0.004
P
E
CARRIER TAPE WIDTH
THICKNESS
W
8.00 + 0.30 - 0.10 0.315 + 0.012
t
0.254 0.02
0.0100 0.0008
1
COVER TAPE
WIDTH
C
5.40 0.10
0.205 + 0.004
TAPE THICKNESS
T
0.062 0.001
0.0025 0.0004
t
DISTANCE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
F
3.50 0.05
0.138 0.002
CAVITY TO PERFORATION
(LENGTH DIRECTION)
P
2
2.00 0.05
0.079 0.002
www.agilent.com/semiconductors
For product information and a complete list of
distributors, please go to our web site.
For technical assistance call:
Americas/Canada: +1 (800) 235-0312 or
(916) 788-6763
Europe: +49 (0) 6441 92460
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Data subject to change.
Copyright © 2004-2005 Agilent Technologies, Inc.
Obsoletes 5989-1917EN
August 25, 2005
5989-3747EN
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