ATF-33143 [AVAGO]
Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Low Noise Figure; 在一个表面贴装塑料封装的低噪声系数低噪声赝HEMT
| 型号： | ATF-33143 |
| 厂家： | 
AVAGO TECHNOLOGIES LIMITED |
| 描述： | Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Low Noise Figure |
| 文件： | 总18页 (文件大小：521K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ATF-35143
Low Noise Pseudomorphic HEMT
in a Surface Mount Plastic Package
Data Sheet
Description
Features
Avago’s ATF-35143 is a high dynamic range, low noise,
PHEMT housed in a 4-lead SC-70 (SOT-343) surface
mount plastic package.
Lead-free Option Available
Low Noise Figure
Excellent Uniformity in Product Specifications
Based on its featured performance, ATF-35143 is suitable
for applications in cellular and PCS base stations, LEO
systems, MMDS, and other systems requiring super low
noise figure with good intercept in the 450 MHz to 10
GHz frequency range.
Low Cost Surface Mount Small Plastic Package
SOT-343 (4 lead SC-70)
Tape-and-Reel Packaging Option Available
Specifications
1.9 GHz; 2 V, 15 mA (Typ.)
0.4 dB Noise Figure
Other PHEMT devices in this family are the ATF-34143
and the ATF-33143. The typical specifications for these
devices at 2 GHz are shown in the table below:
18 dB Associated Gain
11 dBm Output Power at 1 dB Gain Compression
21 dBm Output 3rd Order Intercept
Surface Mount Package
SOT-343
Applications
Low Noise Amplifier for Cellular/PCS Handsets
LNA for WLAN, WLL/RLL, LEO, and MMDS Applications
Pin Connections and Package Marking
General Purpose Discrete PHEMT for Other Ultra Low
Noise Applications
DRAIN
SOURCE
SOURCE
GATE
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 0)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
Note: Top View. Package marking provides
orientation and identification.
“5P”= Device code
“x” = Date code character. A new character
is assigned for each month, year.
Part No.
Gate Width
1600 μ
800 μ
Bias Point
4V, 80 mA
4V, 60 mA
2V, 15 mA
NF (dB)
0.5
Ga (dB)
15.0
OIP3 (dBm)
33.5
ATF-33143
ATF-34143
ATF-35143
0.5
17.5
31.5
400 μ
0.4
18.0
21.0
ATF-35143 Absolute Maximum Ratings[1]
Notes:
Absolute
1. Operation of this device above any
one of these parameters may cause
permanent damage.
2. Assumes DC quiesent conditions.
3. VGS = 0V
4. Source lead temperature is 25°C.
Derate 3.2 mW/°C for TL > 67°C.
5. Thermal resistance measured using
QFI Measurement method.
Symbol
VDS
Parameter
Units
V
Maximum
Drain - Source Voltage[2]
Gate - Source Voltage[2]
Gate Drain Voltage[2]
Drain Current[2]
5.5
-5
VGS
V
VGD
V
-5
[3]
IDS
mA
mW
dBm
°C
Idss
Pdiss
Pin max
TCH
Total Power Dissipation[4]
300
14
RF Input Power
Channel Temperature
Storage Temperature
Thermal Resistance[5]
160
TSTG
jc
°C
-65 to 160
150
°C/W
Product Consistency Distribution Charts [7, 8]
120
120
100
80
60
40
20
0
Cpk = 1.73
Std = 0.35
+0.6 V
100
80
0 V
-3 Std
+3 Std
60
40
–0.6 V
20
0
0
2
4
6
8
19
20
21
22
23
24
V
(V)
OIP3 (dBm)
DS
[6]
Figure 1. Typical Pulsed I-V Curves
(VGS = -0.2V per step)
.
Figure 2. OIP3 @ 2 GHz, 2 V, 15 mA.
LSL=19.0, Nominal=20.9, USL=23.0
200
160
120
160
Cpk = 3.7
Std = 0.03
Cpk = 2.75
Std = 0.17
120
-3 Std
+3 Std
-3 Std
+3 Std
80
40
0
80
40
0
0.2
0.3
0.4
0.5
0.6
0.7
16
17
18
GAIN (dB)
19
20
NF (dB)
Figure 3. NF @ 2 GHz, 2 V, 15 mA.
LSL=0.2, Nominal=0.37, USL=0.7
Figure 4. Gain @ 2 GHz, 2 V, 15 mA.
LSL=16.5, Nominal=18.0, USL=19.5
Notes:
6. Under large signal conditions, VGS may swing positive and the drain current may exceed Idss. These conditions are acceptable as long as the
maximum Pdiss and Pin max ratings are not exceeded.
7. Distribution data sample size is 450 samples taken from 9 different wafers. Future wafers allocated to this product may have nominal values
anywhere within the upper and lower spec limits.
8. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match
based on production test requirements. Circuit losses have been de-embedded from actual measurements.
2
ATF-35143 Electrical Specifications
TA = 25°C, RF parameters measured in a test circuit for a typical device
Symbol
Idss
Parameters and Test Conditions
Saturated Drain Current
Units
mA
V
Min.
40
Typ.[2]
65
Max.
80
[1]
VDS = 1.5 V, VGS = 0 V
VDS = 1.5 V, IDS = 10% of Idss
VGS = 0.45 V, VDS = 2 V
VDS = 1.5 V, gm = Idss /VP
VGD = 5 V
[1]
VP
Pinchoff Voltage
-0.65
—
-0.5
15
-0.35
—
Id
Quiescent Bias Current
Transconductance
mA
mmho
μA
[1]
gm
90
120
—
IGDO
Igss
Gate to Drain Leakage Current
Gate Leakage Current
250
150
VGD = VGS = -4 V
μA
—
10
f = 2 GHz
f = 900 MHz
f = 2 GHz
VDS = 2 V, IDS = 15 mA
VDS = 2 V, IDS = 5 mA
dB
0.4
0.5
0.7
0.9
NF
Ga
Noise Figure[3]
VDS = 2 V, IDS = 15 mA
dB
dB
0.3
0.4
V
DS = 2 V, IDS = 5 mA
VDS = 2 V, IDS = 15 mA
VDS = 2 V, IDS = 5 mA
16.5
14
18
16
19.5
18
Associated Gain[3]
f = 900 MHz
f = 2 GHz
VDS = 2 V, IDS = 15 mA
dB
20
18
V
DS = 2 V, IDS = 5 mA
DS = 2 V, IDS = 15 mA
VDS = 2 V, IDS = 5 mA
DS = 2 V, IDS = 15 mA
DS = 2 V, IDS = 5 mA
V
dBm
dBm
dBm
dBm
19
21
14
Output 3rd Order
Intercept Point[4, 5]
OIP3
P1dB
f = 900 MHz
f = 2 GHz
V
V
19
14
VDS = 2 V, IDSQ = 15 mA
VDS = 2 V, IDSQ = 5 mA
10
8
1 dB Compressed
Intercept Point[4]
f = 900 MHz
VDS = 2 V, IDSQ = 15 mA
9
9
V
DS = 2 V, IDSQ = 5 mA
Notes:
1. Guaranteed at wafer probe level
2. Typical value determined from a sample size of 450 parts from 9 wafers.
3. 2V 5 mA min/max data guaranteed via the 2V 15 mA production test.
4. Measurements obtained using production test board described in Figure 5.
5. Pout = -10 dBm per tone
50 Ohm
Input
50 Ohm
Input
Output
Transmission
Line Including
Gate Bias T
(0.5 dB loss)
Matching Circuit
Γ_mag = 0.66
Γ_ang = 5°
Transmission
Line Including
Drain Bias T
(0.5 dB loss)
DUT
(0.4 dB loss)
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measurements.
This circuit represents a trade-off between an optimal noise match and a realizable match based on production test requirements.
Circuit losses have been de-embedded from actual measurements.
3
ATF-35143 Typical Performance Curves
30
25
20
15
10
5
30
OIP3
25
OIP3
20
15
P
1dB
P
1dB
10
5
2 V
3 V
4 V
2 V
3 V
4 V
0
0
10
20
30
(mA)
40
50
60
60
80
0
10
20
30
(mA)
40
50
60
I
I
DSQ
DSQ
Figure 7. OIP3 and P1dB vs. Bias at 900 MHz.[1,2]
Figure 6. OIP3 and P1dB vs. Bias at 2 GHz.[1,2]
20
2.5
2
24
2 V
3 V
4 V
2.5
2
2 V
3 V
4 V
19
G
a
22
G
a
18
17
1.5
1
20
18
1.5
1
NF
NF
16
0.5
0
16
0.5
0
15
14
0
10
20
30
(mA)
40
50
60
0
10
20
30
(mA)
40
50
I
I
DSQ
DSQ
Figure 8. NF and Ga vs. Bias at 2 GHz.[1]
Figure 9. NF and Ga vs. Bias at 900 MHz.[1]
25
20
15
10
5
20
15
10
5
2 V
3 V
4 V
2 V
3 V
4 V
0
0
-5
-5
0
20
40
60
80
0
20
40
60
I
(mA)
I
(mA)
DS
DS
Figure 10. P1dB vs. Bias (Active Bias)
Tuned for NF @ 2V, 15 mA at 2 GHz.[1]
Figure 11. P1dB vs. Bias (Active Bias)
Tuned for NF @ 2V, 15 mA at 900 MHz.[1]
Notes:
1. Measurements made on a fixed tuned production test board that was tuned for optimal gain match with reasonable noise figure at 2V 15 mA
bias. This circuit represents a trade-off between optimal noise match, maximum gain match and a realizable match based on production test
board requirements. Circuit losses have been de-embedded from actual measurements.
2. P1dB measurements are performed with passive biasing. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain
current may increase or decrease depending on frequency and dc bias point. At lower values of IDSQ the device is running closer to class B as power
output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant
current source as is typically done with active biasing. As an example, at a VDS = 4 V and IDSQ = 5 mA, Id increases to 30 mA as a P1dB of +15 dBm is
approached.
4
ATF-35143 Typical Performance Curves, continued
1.50
1.25
1.00
0.75
0.50
0.25
0
25
5 mA
15 mA
30 mA
20
15
10
5
5 mA
15 mA
30 mA
0
2
4
6
8
10
0
2
4
6
8
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 12. Fmin vs. Frequency and Current at 2V.
Figure 13. Associated Gain vs.
Frequency and Current at 2V.
1.0
0.8
0.6
0.4
0.2
0
22
20
25
20
15
10
5
18
25C
25C
-40C
85C
-40C
16
85C
14
12
0
2
4
6
8
0
2
4
6
8
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 14. Fmin and Ga vs. Frequency and
Temperature, VDS=2V, IDS=15 mA.
Figure 15. OIP3 and P1dB vs. Frequency and
Temperature[1,2], VDS=2V, IDS=15 mA.
2.5
2
3
25
20
15
10
5
25
20
15
10
5
2.5
2
1.5
1
1.5
1
P
P
1dB
1dB
0.5
0
0.5
0
OIP3
Gain
NF
OIP3
Gain
NF
0
-5
0
0
20
40
60
80
0
20
40
60
80
I
(mA)
I
(mA)
DS
DS
Figure 16. OIP3, P1dB, NF and Gain vs. Bias[1]
(Active Bias, 2V, 3.9 GHz).
Figure 17. OIP3, P1dB, NF and Gain vs. Bias[1]
(Active Bias, 2V, 5.8 GHz).
Notes:
1. Measurements made on a fixed tuned test fixture that was tuned for noise figure at 2V 15mA bias. This circuit represents a trade-off between
optimal noise match, maximum gain match and a realizable match based on production test requirements. Circuit losses have been de-
embedded from actual measurements.
2. P1dB measurements are performed with passive biasing. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the
drain current may increase or decrease depending on frequency and dc bias point. At lower values of Idsq the device is running closer to class B as
power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a
constant current source as is typically done with active biasing. As an example, at a VDS = 4V and IDSQ = 5 mA, Id increases to 30 mA as a P1dB of +15
dBm is approached.
5
ATF-35143 Typical Scattering Parameters, VDS = 2 V, IDS = 5 mA
Freq.
GHz
S11
S21
Mag.
S12
Mag.
S22
MSG/MAG
dB
Mag.
Ang.
dB
Ang.
dB
Ang.
Mag.
Ang.
0.50
0.75
1.00
1.50
1.75
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
0.99
0.98
0.97
0.94
0.91
0.90
0.85
0.81
0.72
0.66
0.62
0.60
0.60
0.62
0.66
0.70
0.72
0.74
0.76
0.82
0.82
0.84
0.86
-16.90
-26.37
-34.76
-50.59
-58.26
-65.74
-80.62
-95.48
-125.99
-156.09
174.97
145.61
118.39
93.15
13.34
13.29
13.16
12.83
12.66
12.44
12.04
11.61
10.71
9.79
8.93
8.06
7.20
6.26
5.43
4.58
3.64
2.56
4.64
4.62
4.55
4.38
4.30
4.19
4.00
3.81
3.43
3.09
2.80
2.53
2.29
2.06
1.87
1.69
1.52
1.34
1.18
1.05
0.92
0.81
0.71
166.04
157.78
150.72
137.02
130.38
123.90
111.27
99.08
75.75
53.63
32.77
12.43
-31.70
-28.18
-25.85
-22.73
-21.62
-20.72
-19.33
-18.27
-17.08
-16.48
-16.14
-16.08
-16.31
-16.59
-16.89
-17.14
-17.52
-18.13
-18.79
-19.25
-19.58
-19.74
-20.18
0.026
0.039
0.051
0.073
0.083
0.092
0.108
0.122
0.140
0.150
0.156
0.157
0.153
0.148
0.143
0.139
0.133
0.124
0.115
0.109
0.105
0.103
0.098
77.91
71.12
65.76
54.85
49.69
44.45
34.61
25.21
6.95
0.73
0.72
0.71
0.68
0.67
0.65
0.62
0.59
0.52
0.45
0.38
0.31
0.25
0.20
0.16
0.14
0.17
0.22
0.28
0.34
0.42
0.49
0.56
-12.47
-17.53
-23.33
-34.88
-40.49
-46.03
-56.68
-66.71
-85.11
-102.71
-120.16
-138.01
-157.10
-178.27
157.62
121.82
82.33
22.52
20.83
19.50
17.78
17.13
16.58
15.69
14.94
13.89
13.13
12.53
12.07
11.75
11.19
9.63
8.81
7.87
6.79
5.86
5.89
4.84
4.62
4.04
-9.83
-25.73
-41.00
-54.14
-67.05
-78.09
-88.99
-100.38
-111.06
-119.00
-127.12
-135.42
-143.49
-152.36
-7.12
9.00
-26.14
-44.14
-62.85
-81.42
-99.46
-115.94
-132.24
-149.24
-164.44
179.28
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
71.31
50.91
31.04
11.26
53.17
27.32
6.01
-10.69
-22.32
-35.90
-3.08
1.45
0.43
-0.72
-1.83
-3.02
-14.26
-26.64
-38.94
-54.78
ATF-35143 Typical Noise Parameters
VDS = 2 V, IDS = 5 mA
25
20
15
10
5
Freq.
GHz
Fmin
dB
opt
Rn/50
-
Ga
dB
Mag.
Ang.
6.4
15.0
17.2
28.0
33.4
38.8
50.0
61.9
MSG
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.10
0.12
0.14
0.20
0.23
0.27
0.33
0.39
0.52
0.64
0.77
0.89
1.02
1.14
1.27
0.91
0.87
0.86
0.81
0.78
0.76
0.71
0.66
0.58
0.52
0.47
0.43
0.41
0.40
0.41
0.22
0.22
0.22
0.22
0.21
0.21
0.19
0.17
0.13
0.09
0.06
0.05
0.07
0.13
0.24
19.3
17.9
17.5
16.3
15.8
15.4
14.7
14.0
12.7
11.5
10.4
9.5
S
MAG
21
0
-5
0
5
10
15
20
87.2
FREQUENCY (GHz)
114.4
143.2
173.5
-155.2
-122.9
-90.1
Figure 18. MSG/MAG and |S21|2 vs. Frequency at 2 V, 5 mA.
8.7
8.0
7.5
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end
of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes
connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch
diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
6
ATF-35143 Typical Scattering Parameters, VDS = 2 V, IDS = 10 mA
Freq.
S11
S21
Mag.
S12
Mag.
S22
MSG/MAG
dB
GHz
Mag.
Ang.
dB
Ang.
dB
Ang.
Mag.
Ang.
0.50
0.75
1.00
1.50
1.75
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
0.99
0.97
0.95
0.91
0.89
0.86
0.81
0.76
0.66
0.61
0.58
0.57
0.58
0.61
0.65
0.69
0.72
0.74
0.77
0.82
0.82
0.84
0.86
-18.75
-29.11
-38.28
-55.52
-63.78
-71.82
-87.59
-103.22
-134.81
-165.34
165.88
137.00
110.78
86.75
15.89
15.79
15.61
15.17
14.92
14.65
14.11
13.54
12.40
11.29
10.27
9.27
8.33
7.32
6.44
5.54
4.56
3.45
2.33
1.29
6.23
6.16
6.03
5.73
5.57
5.40
5.08
4.76
4.17
3.67
3.26
2.91
2.61
2.32
2.10
1.89
1.69
1.49
1.31
1.16
1.02
0.91
0.80
164.76
155.98
148.42
133.92
127.01
120.27
107.36
95.04
71.95
50.43
30.28
10.68
-32.40
-28.87
-26.56
-23.61
-22.62
-21.72
-20.35
-19.41
-18.27
-17.65
-17.33
-17.14
-17.14
-17.20
-17.20
-17.27
-17.39
-17.79
-18.20
-18.56
-18.79
-18.79
-19.33
0.024
0.036
0.047
0.066
0.074
0.082
0.096
0.107
0.122
0.131
0.136
0.139
0.139
0.138
0.138
0.137
0.135
0.129
0.123
0.118
0.115
0.115
0.108
77.63
70.58
64.88
54.16
49.11
44.08
34.60
25.71
9.04
0.63
0.61
0.60
0.57
0.56
0.54
0.51
0.47
0.41
0.34
0.27
0.21
0.17
0.13
0.11
0.14
0.19
0.26
0.33
0.39
0.45
0.51
0.57
-14.09
-19.69
-26.10
-38.73
-44.79
-50.70
-61.95
-72.47
-91.47
-110.05
-129.24
-150.49
-174.77
154.01
118.18
78.36
49.57
29.95
9.45
-7.98
-22.30
-32.23
-44.43
24.14
22.30
21.08
19.39
18.75
18.19
17.23
16.48
15.34
14.47
13.80
13.21
12.73
10.69
9.85
9.16
8.34
7.35
6.51
6.51
5.48
5.24
4.72
-5.97
-20.15
-33.84
-45.60
-57.65
-68.22
-79.30
-90.87
-102.19
-110.80
-120.09
-129.92
-139.60
-149.17
-8.09
9.00
-26.38
-43.90
-61.97
-79.90
-97.18
-112.92
-128.66
-144.87
-159.49
-175.19
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
66.25
46.88
27.76
8.62
-5.28
-16.03
-28.32
-40.43
-56.14
0.19
-0.87
-1.99
ATF-35143 Typical Noise Parameters
VDS = 2 V, IDS = 10 mA
30
25
20
15
10
5
Freq.
GHz
Fmin
dB
opt
Rn/50
-
Ga
dB
Mag.
Ang.
5.0
14.0
16.0
26.0
31.9
37.3
48.6
60.6
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.10
0.11
0.12
0.17
0.20
0.23
0.29
0.34
0.46
0.58
0.69
0.81
0.92
1.04
1.16
0.88
0.84
0.83
0.77
0.74
0.71
0.66
0.60
0.52
0.45
0.40
0.37
0.35
0.35
0.37
0.15
0.15
0.15
0.15
0.15
0.14
0.14
0.12
0.12
0.08
0.05
0.05
0.07
0.12
0.22
20.5
19.0
18.6
17.5
16.9
16.4
15.7
15.0
13.6
12.4
11.3
10.3
9.5
MSG
MAG
S
21
0
-5
0
5
10
15
20
86.8
FREQUENCY (GHz)
115.3
145.8
177.7
-149.3
-115.6
-81.8
Figure 19. MSG/MAG and |S21|2 vs. Frequency at 2 V, 10 mA.
8.8
8.3
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at sixteen different impedances using an ATN NP5 test system. From these measurements a true
Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end
of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes
connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch
diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
7
ATF-35143 Typical Scattering Parameters, VDS = 2 V, IDS = 15 mA
Freq.
GHz
S11
S21
Mag.
S12
Mag.
S22
MSG/MAG
dB
Mag.
Ang.
dB
Ang.
dB
Ang.
Mag.
Ang.
0.50
0.75
1.00
1.50
1.75
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
0.99
0.97
0.95
0.90
0.87
0.84
0.79
0.73
0.64
0.59
0.56
0.56
0.57
0.60
0.64
0.68
0.72
0.74
0.77
0.82
0.82
0.84
0.86
-19.75
-30.58
-40.15
-58.08
-66.65
-74.93
-91.13
-107.08
-139.07
-169.70
161.74
133.19
107.56
84.16
17.02
16.90
16.69
16.18
15.90
15.59
14.97
14.34
13.09
11.90
10.81
9.77
8.78
7.75
6.86
5.93
4.93
3.80
2.68
1.63
7.10
7.00
6.83
6.44
6.23
6.02
5.61
5.21
4.51
3.93
3.47
3.08
2.75
2.44
2.20
1.98
1.76
1.55
1.36
1.21
1.06
0.95
0.83
164.04
154.98
147.18
132.28
125.22
118.41
105.38
93.08
70.17
49.03
29.27
10.04
-32.77
-29.37
-27.13
-24.15
-23.10
-22.27
-20.92
-20.00
-18.94
-18.27
-17.79
-17.59
-17.46
-17.39
-17.33
-17.27
-17.27
-17.59
-17.92
-18.20
-18.49
-18.49
-18.94
0.023
0.034
0.044
0.062
0.070
0.077
0.090
0.100
0.113
0.122
0.129
0.132
0.134
0.135
0.136
0.137
0.137
0.132
0.127
0.123
0.119
0.119
0.113
77.60
70.54
64.80
54.23
49.25
44.36
35.36
26.85
11.15
0.57
0.55
0.54
0.51
0.49
0.48
0.44
0.41
0.35
0.29
0.23
0.17
0.14
0.11
0.12
0.16
0.22
0.29
0.36
0.41
0.47
0.53
0.58
-14.99
-20.86
-27.61
-40.74
-46.95
-53.06
-64.59
-75.32
-94.59
-113.89
-134.46
-158.65
172.14
134.01
95.85
63.20
40.01
23.11
3.55
-12.09
-26.21
-35.57
-47.29
24.89
23.05
21.91
20.17
19.53
18.93
17.95
17.17
16.01
15.09
14.30
13.68
12.29
10.74
9.99
9.34
8.57
7.62
6.79
6.76
5.81
5.55
5.06
-2.96
-16.43
-29.47
-40.80
-52.63
-63.33
-74.77
-86.46
-98.11
-107.51
-117.16
-127.03
-137.06
-147.50
-8.35
9.00
-26.29
-43.56
-61.33
-78.94
-95.93
-111.53
-126.76
-142.70
-157.02
-172.47
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
64.19
45.46
26.66
7.70
-5.93
-16.54
-28.76
-40.79
-56.40
0.54
-0.49
-1.60
ATF-35143 Typical Noise Parameters
VDS = 2 V, IDS = 15 mA
30
25
20
15
10
5
Freq.
GHz
Fmin
dB
opt
Rn/50
-
Ga
dB
Mag.
Ang.
4.5
13.1
15.3
26.1
32.6
36.9
48.5
60.9
MSG
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.10
0.13
0.14
0.19
0.22
0.23
0.29
0.34
0.45
0.56
0.67
0.79
0.90
1.01
1.12
0.88
0.83
0.82
0.76
0.72
0.70
0.64
0.58
0.49
0.42
0.37
0.34
0.33
0.34
0.36
0.19
0.17
0.16
0.15
0.15
0.14
0.12
0.07
0.13
0.07
0.05
0.05
0.07
0.13
0.23
20.9
19.4
19.2
17.9
17.3
17.0
16.2
15.4
14.1
12.8
11.7
10.8
9.9
MAG
S
21
0
-5
0
5
10
15
20
87.9
FREQUENCY (GHz)
117.4
149.0
-178.1
-144.3
-110.2
-76.3
Figure 20. MSG/MAG and |S21|2 vs. Frequency at 2 V, 15 mA.
9.2
8.6
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system. From these measurements a true Fmin is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end
of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes
connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch
diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
8
ATF-35143 Typical Scattering Parameters, VDS = 2 V, IDS = 30 mA
Freq.
GHz
S11
S21
Mag.
S12
Mag.
S22
MSG/MAG
dB
Mag.
Ang.
dB
Ang.
dB
Ang.
Mag.
Ang.
0.50
0.75
1.00
1.50
1.75
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
0.99
0.96
0.94
0.88
0.85
0.82
0.76
0.70
0.61
0.56
0.55
0.55
0.56
0.60
0.64
0.68
0.72
0.74
0.77
0.82
0.83
0.85
0.87
-20.95
-32.34
-42.36
-61.09
-69.98
-78.53
-95.14
-111.48
-143.89
-174.55
157.19
129.18
104.19
81.48
18.17
18.02
17.77
17.18
16.85
16.50
15.81
15.11
13.73
12.46
11.31
10.22
9.20
8.15
7.24
6.29
5.27
4.14
3.01
1.94
0.87
8.10
7.96
7.73
7.22
6.96
6.69
6.17
5.69
4.86
4.20
3.68
3.24
2.88
2.56
2.30
2.06
1.84
1.61
1.41
1.25
1.11
0.98
0.87
163.18
153.79
145.67
130.36
123.20
116.28
103.17
90.88
68.24
47.48
28.10
9.28
-33.56
-30.17
-27.96
-25.04
-24.01
-23.22
-21.94
-21.01
-19.83
-19.02
-18.49
-18.13
-17.79
-17.59
-17.33
-17.20
-17.14
-17.33
-17.65
-17.86
-18.06
-18.13
-18.56
0.021
0.031
0.040
0.056
0.063
0.069
0.080
0.089
0.102
0.112
0.119
0.124
0.129
0.132
0.136
0.138
0.139
0.136
0.131
0.128
0.125
0.124
0.118
77.39
70.55
65.08
54.79
50.12
45.58
37.15
29.29
14.76
0.49
0.47
0.46
0.43
0.41
0.39
0.36
0.34
0.28
0.23
0.17
0.13
0.11
0.11
0.13
0.18
0.24
0.31
0.38
0.43
0.49
0.54
0.60
-15.99
-22.00
-29.03
-42.64
-48.96
-55.19
-66.91
-77.74
-97.29
-117.24
-139.78
-169.09
155.22
112.23
77.30
51.74
32.67
17.81
0.45
-15.44
-29.37
-38.55
-49.70
25.87
24.10
22.86
21.11
20.42
19.86
18.87
18.06
16.78
15.74
14.90
14.17
11.98
10.82
10.15
9.51
8.77
7.87
7.08
7.06
6.13
5.89
5.39
1.63
-10.98
-23.67
-34.72
-46.33
-57.43
-68.78
-81.32
-93.11
-103.06
-112.88
-123.55
-134.43
-144.88
-8.75
9.00
-26.37
-43.37
-60.90
-78.22
-94.88
-110.07
-125.15
-140.80
-154.83
-170.03
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
62.07
43.83
25.46
6.81
-6.74
-17.21
-29.31
-41.30
-56.87
-0.15
-1.24
ATF-35143 Typical Noise Parameters
VDS = 2 V, IDS = 30 mA
30
25
20
15
10
5
Freq.
GHz
Fmin
dB
opt
Rn/50
-
Ga
dB
Mag.
Ang.
2.7
12.1
14.5
26.3
33.4
38.1
50.6
64.2
MSG
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.11
0.15
0.16
0.22
0.25
0.27
0.33
0.39
0.52
0.64
0.77
0.90
1.02
1.15
1.28
0.87
0.81
0.80
0.73
0.69
0.66
0.60
0.54
0.45
0.39
0.34
0.33
0.33
0.36
0.40
0.18
0.17
0.16
0.15
0.15
0.14
0.13
0.12
0.10
0.07
0.05
0.06
0.10
0.18
0.30
21.6
20.2
19.9
18.7
18.0
17.7
17.0
16.2
14.8
13.5
12.4
11.4
10.5
9.7
MAG
S
21
0
-5
0
5
10
15
20
94.0
FREQUENCY (GHz)
126.5
160.6
-164.7
-130.3
-97.5
-67.0
Figure 21. MSG/MAG and |S21|2 vs. Frequency at 2 V, 30 mA.
9.1
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system. From these measurements a true Fmin is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end
of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes
connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch
diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
9
ATF-35143 Typical Scattering Parameters, VDS = 3 V, IDS = 10 mA
Freq.
GHz
S11
S21
Mag.
S12
Mag.
S22
MSG/MAG
dB
Mag.
Ang.
dB
Ang.
dB
Ang.
Mag.
Ang.
0.50
0.75
1.00
1.50
1.75
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
0.99
0.97
0.95
0.91
0.88
0.86
0.81
0.75
0.66
0.60
0.58
0.56
0.57
0.60
0.64
0.68
0.71
0.74
0.77
0.82
0.82
0.84
0.86
-18.76
-29.12
-38.28
-55.52
-63.78
-71.79
-87.55
-103.15
-134.65
-165.16
166.12
137.25
111.11
87.10
16.07
15.97
15.79
15.34
15.09
14.82
14.27
13.71
12.56
11.45
10.43
9.44
8.51
7.51
6.64
5.76
4.81
3.71
2.61
1.60
6.36
6.29
6.16
5.85
5.68
5.51
5.17
4.85
4.25
3.74
3.32
2.97
2.66
2.38
2.15
1.94
1.74
1.53
1.35
1.20
1.06
0.94
0.82
164.73
155.93
148.37
133.87
126.95
120.22
107.29
95.00
71.95
50.50
30.44
10.91
-32.77
-29.37
-27.13
-24.01
-22.97
-22.05
-20.82
-19.83
-18.71
-18.13
-17.79
-17.65
-17.59
-17.65
-17.65
-17.65
-17.72
-17.99
-18.34
-18.56
-18.71
-18.71
-19.25
0.023
0.034
0.044
0.063
0.071
0.079
0.091
0.102
0.116
0.124
0.129
0.131
0.132
0.131
0.131
0.131
0.130
0.126
0.121
0.118
0.116
0.116
0.109
76.79
70.22
64.53
54.04
49.13
44.06
34.85
25.98
9.56
0.65
0.63
0.62
0.59
0.57
0.56
0.52
0.49
0.42
0.35
0.29
0.23
0.18
0.13
0.10
0.11
0.16
0.23
0.29
0.35
0.42
0.49
0.55
-13.67
-19.08
-25.28
-37.48
-43.28
-49.01
-59.84
-69.88
-87.88
-105.14
-122.61
-141.22
-162.07
172.01
139.11
93.44
57.88
35.32
13.11
-4.62
-19.61
-29.62
-41.92
24.42
22.70
21.46
19.68
19.00
18.43
17.55
16.77
15.63
14.79
14.11
13.55
12.81
10.75
9.98
9.32
8.54
7.59
6.76
6.79
5.79
5.54
5.05
-5.10
-19.00
-32.32
-43.61
-55.14
-65.42
-76.27
-87.47
-98.60
-107.41
-116.63
-126.02
-136.14
-146.13
-7.80
9.00
-26.05
-43.52
-61.59
-79.58
-96.96
-112.95
-128.77
-145.23
-160.01
-176.05
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
66.58
47.31
28.18
9.02
-4.82
-15.65
-28.00
-40.11
-55.87
0.51
-0.55
-1.68
ATF-35143 Typical Noise Parameters
VDS = 3 V, IDS = 10 mA
30
25
20
15
10
5
Freq.
GHz
Fmin
dB
opt
Rn/50
-
Ga
dB
Mag.
Ang.
4.7
13.2
15.3
25.9
32.3
36.5
47.7
59.6
MSG
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.12
0.16
0.17
0.22
0.26
0.28
0.33
0.39
0.49
0.60
0.71
0.81
0.92
1.03
1.13
0.87
0.82
0.81
0.75
0.71
0.68
0.62
0.57
0.49
0.43
0.38
0.36
0.34
0.34
0.35
0.21
0.19
0.19
0.17
0.16
0.16
0.14
0.13
0.10
0.08
0.05
0.05
0.07
0.12
0.21
20.0
19.0
18.8
17.8
17.2
16.7
15.9
15.1
13.7
12.5
11.4
10.4
9.6
MAG
S
21
0
-5
0
5
10
15
20
85.4
FREQUENCY (GHz)
113.6
143.7
175.6
-151.3
-117.3
-82.7
Figure 22. MSG/MAG and |S21|2 vs. Frequency at 3 V, 10 mA.
8.9
8.4
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end
of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes
connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch
diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
10
ATF-35143 Typical Scattering Parameters, VDS = 3 V, IDS = 15 mA
Freq.
GHz
S11
S21
Mag.
S12
Mag.
S22
MSG/MAG
dB
Mag.
Ang.
dB
Ang.
dB
Ang.
Mag.
Ang.
0.50
0.75
1.00
1.50
1.75
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
0.99
0.96
0.94
0.90
0.87
0.84
0.78
0.73
0.63
0.58
0.56
0.55
0.56
0.60
0.64
0.68
0.71
0.74
0.77
0.82
0.82
0.85
0.86
-19.76
-30.58
-40.14
-58.04
-66.61
-74.88
-91.02
-106.95
-138.86
-169.42
162.05
133.54
107.88
84.56
17.20
17.08
16.86
16.35
16.06
15.75
15.13
14.50
13.24
12.05
10.97
9.93
8.96
7.95
7.06
6.16
5.19
4.09
2.98
1.96
7.24
7.14
6.97
6.57
6.35
6.13
5.71
5.31
4.59
4.00
3.53
3.14
2.81
2.50
2.26
2.03
1.82
1.60
1.41
1.25
1.11
0.98
0.87
164.03
154.94
147.12
132.22
125.16
118.36
105.32
93.02
70.17
49.09
29.39
10.23
-33.15
-29.90
-27.54
-24.58
-23.48
-22.62
-21.41
-20.45
-19.41
-18.79
-18.34
-18.06
-17.92
-17.86
-17.72
-17.59
-17.59
-17.79
-18.06
-18.27
-18.42
-18.49
-18.86
0.022
0.032
0.042
0.059
0.067
0.074
0.085
0.102
0.107
0.115
0.121
0.125
0.127
0.128
0.130
0.132
0.132
0.129
0.125
0.122
0.120
0.119
0.114
76.95
69.88
64.59
54.00
49.23
44.39
35.29
27.00
11.47
0.60
0.58
0.57
0.54
0.52
0.50
0.47
0.44
0.37
0.31
0.24
0.19
0.14
0.11
0.09
0.12
0.18
0.25
0.31
0.37
0.44
0.50
0.56
-14.39
-20.00
-26.48
-39.05
-45.00
-50.83
-61.71
-71.87
-89.81
-107.23
-125.21
-145.42
-168.81
158.79
118.59
75.36
46.94
27.91
7.94
-8.87
-23.42
-32.96
-44.64
25.17
23.47
22.20
20.47
19.78
19.19
18.27
17.47
16.32
15.42
14.66
14.00
12.23
10.87
10.16
9.55
8.80
7.86
7.09
7.04
6.09
5.87
5.41
-2.18
-15.36
-27.97
-38.89
-50.41
-60.57
-71.45
-83.32
-94.36
-103.78
-113.43
-123.35
-134.06
-144.46
-8.11
9.00
-26.04
-43.28
-61.06
-78.75
-95.88
-111.57
-127.09
-143.31
-157.87
-173.65
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
64.57
45.84
27.11
8.18
-5.58
-16.18
-28.41
-40.49
-56.20
0.88
-0.15
-1.25
ATF-35143 Typical Noise Parameters
VDS = 3 V, IDS = 15 mA
30
25
20
15
10
5
Freq.
GHz
Fmin
dB
opt
Rn/50
-
Ga
dB
Mag.
Ang.
3.5
12.1
14.3
25.1
31.6
35.9
47.2
59.4
MSG
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.11
0.15
0.16
0.21
0.24
0.26
0.31
0.37
0.47
0.58
0.68
0.79
0.89
1.00
1.10
0.86
0.81
0.80
0.73
0.69
0.66
0.60
0.55
0.46
0.40
0.36
0.33
0.32
0.32
0.33
0.17
0.16
0.16
0.15
0.14
0.20
0.17
0.15
0.11
0.07
0.05
0.05
0.07
0.13
0.22
21.2
19.9
19.6
18.2
17.6
17.2
16.3
15.6
14.2
12.9
11.8
10.8
10.0
9.3
MAG
S
21
0
-5
0
5
10
15
20
86.0
FREQUENCY (GHz)
115.4
146.8
179.8
-146.1
-111.5
-76.8
Figure 23. MSG/MAG and |S21|2 vs. Frequency at 3 V, 15 mA.
8.8
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end
of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes
connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch
diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
11
ATF-35143 Typical Scattering Parameters, VDS = 3 V, IDS = 30 mA
Freq.
GHz
S11
S21
Mag.
S12
Mag.
S22
MSG/MAG
dB
Mag.
Ang.
dB
Ang.
dB
Ang.
Mag.
Ang.
0.50
0.75
1.00
1.50
1.75
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
0.99
0.96
0.93
0.88
0.85
0.82
0.76
0.70
0.61
0.56
0.54
0.54
0.55
0.59
0.63
0.67
0.71
0.74
0.77
0.82
0.82
0.85
0.87
-21.01
-32.39
-42.42
-61.18
-70.01
-78.57
-95.09
-111.30
-143.48
-174.00
157.98
130.06
105.20
82.53
18.45
18.29
18.03
17.42
17.09
16.74
16.03
15.32
13.93
12.65
11.50
10.42
9.42
8.39
7.49
6.56
5.58
4.46
3.36
2.33
1.25
8.36
8.21
7.97
7.43
7.15
6.87
6.33
5.83
4.97
4.29
3.76
3.32
2.96
2.63
2.37
2.13
1.90
1.67
1.47
1.31
1.16
1.03
0.91
163.08
153.62
145.49
130.11
122.91
116.00
102.87
90.60
68.04
47.37
28.09
9.32
-33.98
-30.46
-28.40
-25.35
-24.44
-23.61
-22.38
-21.41
-20.26
-19.58
-19.02
-18.64
-18.34
-18.06
-17.79
-17.52
-17.46
-17.65
-17.86
-17.99
-18.06
-18.06
-18.49
0.020
0.030
0.038
0.054
0.060
0.066
0.076
0.085
0.097
0.105
0.112
0.117
0.121
0.125
0.129
0.133
0.134
0.131
0.128
0.126
0.125
0.125
0.119
76.89
69.94
64.80
54.32
49.77
45.15
36.87
29.08
14.96
0.53
0.51
0.50
0.47
0.45
0.43
0.40
0.37
0.31
0.25
0.19
0.14
0.11
0.09
0.09
0.14
0.20
0.27
0.34
0.39
0.46
0.51
0.57
-15.23
-21.01
-27.72
-40.61
-46.56
-52.43
-63.37
-73.44
-91.21
-108.94
-128.04
-151.53
179.40
138.30
95.15
62.17
39.86
23.41
5.08
-11.42
-25.74
-35.29
-46.81
26.21
24.36
23.22
21.39
20.72
20.17
19.21
18.36
17.10
16.11
15.26
13.78
12.10
11.00
10.36
9.76
9.05
8.14
7.40
7.41
6.44
6.19
5.71
2.38
-10.00
-22.21
-32.79
-44.11
-54.57
-66.16
-78.18
-89.74
-99.72
-109.60
-120.39
-131.03
-141.69
-8.66
9.00
-26.26
-43.25
-60.82
-78.23
-95.07
-110.42
-125.79
-141.72
-156.00
-171.48
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
63.18
44.96
26.64
7.94
-5.53
-16.02
-28.09
-40.02
-55.63
0.23
-0.85
ATF-35143 Typical Noise Parameters
VDS = 3 V, IDS = 30 mA
30
25
20
15
10
5
Freq.
GHz
Fmin
dB
opt
Rn/50
-
Ga
dB
Mag.
Ang.
3.5
12.5
14.7
25.9
32.6
37.1
49.3
62.5
MSG
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.11
0.16
0.17
0.23
0.27
0.28
0.35
0.41
0.53
0.66
0.79
0.91
1.04
1.17
1.29
0.87
0.81
0.79
0.72
0.68
0.65
0.59
0.53
0.43
0.37
0.33
0.31
0.31
0.33
0.38
0.18
0.17
0.17
0.16
0.15
0.15
0.14
0.12
0.09
0.07
0.05
0.06
0.10
0.17
0.28
21.6
20.5
20.2
18.9
18.3
17.9
17.0
16.3
14.9
13.6
12.4
11.4
10.6
9.9
MAG
S
21
0
-5
0
5
10
15
20
91.6
FREQUENCY (GHz)
123.4
157.1
-168.3
-133.7
-100.0
-68.1
Figure 24. MSG/MAG and |S21|2 vs. Frequency at 3 V, 30 mA.
9.3
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end
of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes
connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch
diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
12
ATF-35143 Typical Scattering Parameters, VDS = 4 V, IDS = 30 mA
Freq.
GHz
S11
S21
Mag.
S12
Mag.
S22
MSG/MAG
dB
Mag.
Ang.
dB
Ang.
dB
Ang.
Mag.
Ang.
0.50
0.75
1.00
1.50
1.75
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
0.99
0.96
0.94
0.88
0.85
0.82
0.76
0.71
0.62
0.57
0.55
0.55
0.57
0.60
0.64
0.68
0.72
0.74
0.77
0.82
0.82
0.85
0.86
-21.11
-32.57
-42.70
-61.55
-70.46
-79.07
-95.78
-112.14
-144.46
-174.93
157.13
129.56
104.96
82.47
18.54
18.38
18.13
17.53
17.20
16.84
16.14
15.43
14.04
12.76
11.61
10.54
9.55
8.53
7.64
6.74
5.79
4.71
3.64
2.65
1.62
8.45
8.30
8.07
7.53
7.24
6.95
6.41
5.91
5.03
4.34
3.81
3.37
3.00
2.67
2.41
2.17
1.95
1.72
1.52
1.36
1.21
1.08
0.95
163.20
153.72
145.56
130.19
123.00
116.04
102.91
90.63
68.03
47.35
28.07
9.35
-33.98
-30.75
-28.64
-25.68
-24.58
-23.88
-22.62
-21.72
-20.72
-20.00
-19.49
-19.25
-18.94
-18.79
-18.49
-18.27
-18.13
-18.27
-18.42
-18.49
-18.49
-18.49
-18.86
0.020
0.029
0.037
0.052
0.059
0.064
0.074
0.082
0.092
0.100
0.106
0.109
0.113
0.115
0.119
0.122
0.124
0.122
0.120
0.119
0.119
0.119
0.114
77.63
70.15
64.68
53.94
49.29
44.64
36.30
28.32
13.98
0.56
0.54
0.53
0.50
0.48
0.46
0.43
0.40
0.34
0.28
0.22
0.17
0.13
0.09
0.07
0.09
0.15
0.22
0.28
0.34
0.40
0.46
0.52
-14.66
-20.35
-26.91
-39.45
-45.29
-50.94
-61.54
-71.17
-87.95
-104.23
-120.69
-139.29
-160.54
169.67
128.74
78.47
47.96
28.53
8.38
-8.46
-22.93
-32.29
-43.97
26.26
24.55
23.38
21.61
20.90
20.36
19.38
18.58
17.38
16.38
15.55
14.19
12.47
11.33
10.70
10.10
9.40
1.12
-11.07
-23.07
-33.33
-44.34
-54.44
-65.68
-77.35
-88.59
-98.13
-108.03
-118.41
-129.54
-140.19
-8.62
9.00
-26.19
-43.13
-60.63
-78.09
-95.00
-110.50
-126.04
-142.14
-156.61
-172.55
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
63.23
45.01
26.69
8.00
8.47
7.69
7.76
6.75
6.53
6.00
-5.46
-16.18
-28.39
-40.51
-56.36
0.64
-0.44
ATF-35143 Typical Noise Parameters
VDS = 4 V, IDS = 30 mA
30
25
20
15
10
5
Freq.
GHz
Fmin
dB
opt
Rn/50
-
Ga
dB
Mag.
Ang.
3.5
12.5
14.7
25.9
32.6
37.1
49.1
62.0
MSG
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.10
0.14
0.16
0.21
0.25
0.28
0.33
0.38
0.49
0.62
0.74
0.87
0.99
1.11
1.24
0.90
0.85
0.83
0.77
0.73
0.70
0.64
0.58
0.48
0.40
0.35
0.32
0.31
0.34
0.39
0.22
0.21
0.20
0.18
0.17
0.17
0.15
0.14
0.10
0.07
0.05
0.06
0.09
0.15
0.26
20.7
19.7
19.5
18.4
17.8
17.5
16.7
16.0
14.7
13.5
12.5
11.5
10.7
10.0
9.5
MAG
S
21
0
-5
0
5
10
15
20
90.3
FREQUENCY (GHz)
121.2
154.0
-172.2
-138.0
-104.2
-71.6
Figure 25. MSG/MAG and |S21|2 vs. Frequency at 4 V, 30 mA.
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end
of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes
connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch
diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
13
ATF-35143 Typical Scattering Parameters, VDS = 4 V, IDS = 60 mA
Freq.
GHz
S11
S21
Mag.
S12
Mag.
S22
MSG/MAG
dB
Mag.
Ang.
dB
Ang.
dB
Ang.
Mag.
Ang.
0.50
0.75
1.00
1.50
1.75
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
0.99
0.96
0.94
0.88
0.85
0.82
0.76
0.70
0.61
0.57
0.55
0.55
0.57
0.60
0.64
0.69
0.72
0.75
0.78
0.83
0.84
0.87
0.88
-21.27
-32.77
-42.95
-61.92
-70.88
-79.55
-96.36
-112.86
-145.47
-176.15
155.85
128.25
103.61
81.11
18.15
17.99
17.74
17.13
16.79
16.45
15.74
15.03
13.64
12.35
11.21
10.14
9.16
8.14
7.25
6.37
5.43
4.37
3.30
2.29
1.25
8.09
7.94
7.71
7.19
6.91
6.64
6.12
5.64
4.81
4.15
3.64
3.21
2.87
2.55
2.30
2.08
1.87
1.65
1.46
1.30
1.16
1.03
0.90
163.09
153.59
145.40
129.98
122.76
115.80
102.60
90.26
67.52
46.76
27.45
8.68
-34.89
-31.70
-29.37
-26.56
-25.51
-24.73
-23.48
-22.62
-21.51
-20.82
-20.26
-19.83
-19.41
-19.09
-18.71
-18.27
-17.92
-17.92
-17.92
-17.86
-17.79
-17.79
-17.99
0.018
0.026
0.034
0.047
0.053
0.058
0.067
0.074
0.084
0.091
0.097
0.102
0.107
0.111
0.116
0.122
0.127
0.127
0.127
0.128
0.129
0.129
0.126
77.28
70.40
65.05
55.14
50.40
46.34
38.10
30.61
17.18
0.54
0.53
0.51
0.48
0.47
0.45
0.42
0.39
0.34
0.29
0.24
0.19
0.15
0.11
0.07
0.06
0.10
0.18
0.25
0.31
0.39
0.46
0.52
-13.50
-18.54
-24.50
-35.90
-41.17
-46.33
-55.86
-64.53
-79.32
-93.48
-107.07
-121.43
-137.04
-156.16
178.65
113.63
60.75
26.52
24.83
23.55
21.84
21.15
20.59
19.61
18.82
17.58
16.59
15.74
13.17
11.94
10.99
10.38
9.88
9.26
8.35
7.57
7.78
6.73
6.65
6.06
5.47
-5.83
-17.10
-26.34
-36.93
-46.43
-57.09
-68.92
-80.43
-90.26
-100.79
-112.14
-123.71
-134.88
-9.34
9.00
-27.02
-44.01
-61.57
-79.17
-96.36
-112.19
-127.94
-144.27
-159.19
-175.28
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
62.01
43.90
25.78
7.31
35.69
13.24
-4.12
-19.12
-28.89
-40.92
-6.12
-16.62
-28.78
-40.91
-56.66
0.21
-0.92
ATF-35143 Typical Noise Parameters
VDS = 4 V, IDS = 60 mA
30
25
20
15
10
5
Freq.
GHz
Fmin
dB
opt
Rn/50
-
Ga
dB
Mag.
Ang.
4.4
15.6
18.4
32.4
40.8
46.4
61.0
76.6
109.9
144.8
-179.8
-145.5
-113.7
-85.6
-62.6
MSG
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.22
0.30
0.32
0.42
0.48
0.52
0.63
0.73
0.94
1.15
1.35
1.56
1.77
1.98
2.18
0.84
0.78
0.77
0.70
0.65
0.63
0.56
0.51
0.44
0.40
0.39
0.40
0.43
0.47
0.53
0.29
0.29
0.28
0.26
0.25
0.24
0.21
0.19
0.13
0.09
0.08
0.13
0.26
0.48
0.79
22.5
21.3
21.0
19.8
19.2
18.8
17.8
17.0
15.5
14.1
12.9
11.9
11.0
10.3
9.8
MAG
S
21
0
-5
0
5
10
15
20
FREQUENCY (GHz)
Figure 26. MSG/MAG and |S21|2 vs. Frequency at 4 V, 60 mA.
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is
calculated. Refer to the noise parameter application section for more information.
3. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end
of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes
connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch
diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
14
the optimum reflection coefficient required to produce
Fmin and s is the reflection coefficient of the source
impedance actually presented to the device. The losses
of the matching networks are non-zero and they will
also add to the noise figure of the device creating a
higher amplifier noise figure. The losses of the matching
networks are related to the Q of the components and
associated printed circuit board loss. o is typically fairly
low at higher frequencies and increases as frequency is
lowered. Larger gate width devices will typically have a
lower o as compared to narrower gate width devices.
Noise Parameter Applications Information
Fmin values at 2 GHz and higher are based on
measurements while the Fmins below 2 GHz have been
extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different
impedances using an ATN NP5 test system. From these
measurements, a true Fmin is calculated. Fmin represents
the true minimum noise figure of the device when the
deviceispresentedwithanimpedancematchingnetwork
that transforms the source impedance, typically 50Ω, to
an impedance represented by the reflection coefficient
o. The designer must design a matching network that
will present o to the device with minimal associated
circuit losses. The noise figure of the completed amplifier
is equal to the noise figure of the device plus the losses
of the matching network preceding the device. The
noise figure of the device is equal to Fmin only when the
device is presented with o. If the reflection coefficient
of the matching network is other than o, then the noise
figure of the device will be greater than Fmin based on the
following equation.
Typically for FETs, the higher o usually infers that an
impedance much higher than 50Ω is required for the
device to produce Fmin. At VHF frequencies and even
lower L Band frequencies, the required impedance can
be in the vicinity of several thousand ohms. Matching to
such a high impedance requires very hi-Q components
in order to minimize circuit losses. As an example at
900 MHz, when airwwound coils (Q>100) are used for
matching networks, the loss can still be up to 0.25 dB
which will add directly to the noise figure of the device.
Using muiltilayer molded inductors with Qs in the 30 to
50 range results in additional loss over the airwound coil.
Losses as high as 0.5 dB or greater add to the typical 0.15
dB Fmin of the device creating an amplifier noise figure
of nearly 0.65 dB. A discussion concerning calculated
and measured circuit losses and their effect on amplifier
noise figure is covered in Avago Application 1085.
2
NF = Fmin + 4 Rn
|s – o |
Zo (|1 +
o|2)(1- s|2)
Where Rn/Zo is the normalized noise resistance, o is
15
ATF-35143 SC-70 4 Lead, High Frequency Model
Optimized for 0.1 – 6.0 GHz
R
EQUATION La=0.1 nH
EQUATION Lb=0.1 nH
EQUATION Lc=0.8 nH
EQUATION Ld=0.6 nH
EQUATION Rb=0.1 OH
EQUATION Ca=0.15 pF
EQUATION Cb=0.15 pF
R=0.1 OH
LOSSYL
L=Lb
R=Rb
L
LOSSYL
L
LOSSYL
L=Lb
SOURCE
GATE_IN
SOURCE
L=Lb
R=Rb
L=La .5
*
L=Lc
R=Rb
D
S
C=Cb
C
C=Ca
C
G
L
L
LOSSYL
LOSSYL
DRAIN_OUT
L=Lb
R=Rb
L=Lb
R=Rb
L=Ld
L=La
This model can be used as a design tool. It has been tested
onMDSforvariousspecifications. However, formoreprecise
and accurate design, please refer to the measured data in
this data sheet. For future improvements Avago reserves
the right to change these models without prior notice.
ATF-35143 Die Model
STATZ MESFET MODEL
*
*
MODEL = FET
IDS model
Gate model
Parasitics
Breakdown
Noise
NFET=yes
PFET=
DELTA=.2
RG=1
GSFWD=1
GSREV=0
GDFWD=1
GDREV=0
VJR=1
IS=1 nA
IR=1 nA
IMAX=.1
XTI=
FNC=01e+6
R=.17
GSCAP=3
RD=Rd
IDSMOD=3
VTO=–0.95
BETA= Beta
LAMBDA=0.09
ALPHA=4.0
B=0.8
TNOM=27
IDSTC=
VBI=.7
CGS=cgs pF
GDCAP=3
GCD=Cgd pF
RS=Rs
P=.65
LG=Lg nH
LD=Ld nH
LS=Ls nH
CDS=Cds pF
CRF=.1
C=.2
RC=Rc
N=
EG=
Model scal factors (W=FET width in microns)
EQUATION Cds=0.01 W/200
EQUATION Beta=0.06 W/200
*
EQUATION Rd=200/W
D
*
NFETMESFET
EQUATION Rs=.5 200/W
*
EQUATION Cgs=0.2 W/200
*
G
MODEL=FET
EQUATION Cgd=0.04 W/200
*
EQUATION Lg=0.03 200/W
*
S
S
EQUATION Ld=0.03 200/W
*
EQUATION Ls=0.01 200/W
*
W=400 μm
EQUATION Rc=500 200/W
*
16
Part Number Ordering Information
No. of
Part Number
ATF-35143-TR1G
ATF-35143-TR2G
ATF-35143-BLKG
Devices
3000
10000
100
Container
7”Reel
13”Reel
antistatic bag
Package Dimensions
SC-70 4L/SOT-343
Recommended PCB Pad Layout for
Avago’s SC70 4L/SOT-343 Products
1.30
0.051
1.30 (.051)
BSC
1.00
0.039
HE
E
2.00
0.079
0.60
0.024
1.15 (.045) BSC
0.9
0.035
b1
1.15
0.045
D
mm
inches
Dimensions in
A
A2
A1
b
C
L
DIMENSIONS (mm)
SYMBOL
E
D
HE
A
A2
A1
b
MIN.
1.15
1.85
1.80
0.80
0.80
0.00
0.15
0.55
0.10
0.10
MAX.
1.35
2.25
2.40
1.10
1.00
0.10
0.40
0.70
0.20
0.46
NOTES:
1. All dimensions are in mm.
2. Dimensions are inclusive of plating.
3. Dimensions are exclusive of mold flash & metal burr.
4. All specifications comply to EIAJ SC70.
5. Die is facing up for mold and facing down for trim/form,
ie: reverse trim/form.
b1
c
L
6. Package surface to be mirror finish.
17
Device Orientation
REEL
TOP VIEW
4 mm
END VIEW
CARRIER
TAPE
8 mm
5PX
5PX
5PX
5PX
USER
FEED
DIRECTION
COVER TAPE
Tape Dimensions and Product Orientation For Outline 4T
P
P
D
2
P
0
E
F
W
C
D
1
t
(CARRIER TAPE THICKNESS)
T (COVER TAPE THICKNESS)
t
1
K
10° MAX.
10° MAX.
0
A
B
0
0
DESCRIPTION
SYMBOL
SIZE (mm)
2.40 0.10
2.40 0.10
1.20 0.10
4.00 0.10
1.00 + 0.25
SIZE (INCHES)
CAVITY
LENGTH
WIDTH
DEPTH
PITCH
A
B
K
P
D
0.094 0.004
0.094 0.004
0.047 0.004
0.157 0.004
0.039 + 0.010
0
0
0
BOTTOM HOLE DIAMETER
1
0
PERFORATION
DIAMETER
PITCH
POSITION
D
1.55 0.10
4.00 0.10
1.75 0.10
0.061 + 0.002
0.157 0.004
0.069 0.004
P
E
CARRIER TAPE WIDTH
THICKNESS
W
8.00 + 0.30 - 0.10 0.315 + 0.012
t
0.254 0.02
0.0100 0.0008
1
COVER TAPE
WIDTH
C
5.40 0.10
0.205 + 0.004
TAPE THICKNESS
T
0.062 0.001
0.0025 0.0004
t
DISTANCE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
F
3.50 0.05
0.138 0.002
CAVITY TO PERFORATION
(LENGTH DIRECTION)
P
2
2.00 0.05
0.079 0.002
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2012 Avago Technologies. All rights reserved. Obsoletes 5989-3748EN
AV02-1416EN - June 8, 2012
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