ATF-26884-TR1 [AGILENT]
2-16 GHz General Purpose Gallium Arsenide FET; 2-16 GHz的通用砷化镓场效应管
| 型号： | ATF-26884-TR1 |
| 厂家： | 
AGILENT TECHNOLOGIES, LTD. |
| 描述： | 2-16 GHz General Purpose Gallium Arsenide FET |
| 文件： | 总4页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2–16 GHz General Purpose
Gallium Arsenide FET
Technical Data
ATF-26884
housed in a cost effective
microstrip package. This device is
Features
• High Output Power:
84 Plastic Package
designed for use in oscillator
applications and general purpose
amplifier applications in the
2-16 GHzfrequencyrange.
18.0 dBmTypicalP 1dB at12 GHz
• High Gain:
9.0dBTypicalGSS at12 GHz
• Low Cost Plastic Package
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
250 microns.Provengoldbased
metallization systems and nitride
passivation assure a rugged,
reliable device.
• Tape-and-Reel Packaging
Option Available[1]
Description
The ATF-26884 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
Units Min. Typ. Max.
GSS
Tuned Small Signal Gain: VDS = 5 V, IDS = 30 mA
Optimum Noise Figure: VDS = 3 V, IDS = 10 mA
f=12.0GHz dB
7.0
9.0
NFO
GA
f=12.0GHz dB
f=12.0GHz dB
2.2
6.0
Gain @ NFO: VDS = 3 V, I = 10 mA
DS
P1 dB
Power Output @ 1 dB Gain Compression:
VDS =5V, IDS =30mA
f=12.0GHz dBm 15.0
18.0
gm
IDSS
VP
Transconductance: VDS = 3 V, VGS = 0 V
Saturated Drain Current: VDS = 3 V, VGS = 0 V
Pinch-off Voltage: VDS = 3 V, IDS = 1 mA
mmho 15
35
50
mA
V
30
90
-3.5
-1.5
-0.5
Note:
1. Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors.”
5-71
5965-8703E
ATF-26884 Absolute Maximum Ratings
Notes:
Absolute
Maximum[1]
+7
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE TEMPERATURE = 25°C.
3. Derate at 3.3 mW/°C for
TCASE >92.5°C.
4. The small spot size of this tech-
nique results in a higher, though
more accurate determination of θjc
than do alternate methods. See
MEASUREMENTS section for
more information.
Symbol
VDS
VGS
VGD
IDS
PT
TCH
TSTG
Parameter
Units
V
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
Power Dissipation[2,3]
Channel Temperature
Storage Temperature
V
V
mA
mW
°C
-4
-8
IDSS
275
175
°C
-65to+150
Thermal Resistance:
Liquid Crystal Measurement:
θjc =300°C/W;TCH=150°C
1 µmSpotSize[4]
Part Number Ordering Information
Part Number
ATF-26884-TR1
ATF-26884-STR
Devices Per Reel
Reel Size
7"
1000
10
strip
ATF-26884 Typical Performance, TA = 25°C
25
20
15
10
5
25
20
15
10
5
MSG
MSG
MSG
MAG
MAG
MSG
MAG
2
|
|S
21
2
|
|S
21
0
0
2.0
4.0
6.0 8.0 10.0 12.0 16.0
2.0
4.0
6.0 8.0 10.0 12.0 16.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 1. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 3 V, IDS = 10 mA.
Figure 2. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 5 V, IDS = 30 mA.
5-72
Typical Scattering Parameters, Common Emitter, ZO = 50 Ω,TA = 25°C, VDS = 3V,IDS = 10mA
Freq.
GHz
S11
S21
Mag.
S12
Mag.
S22
Mag.
Ang.
dB
Ang.
dB
Ang.
Mag.
Ang.
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
.96
.91
.86
.79
.73
.67
.62
.57
.53
.52
.49
.52
.56
.60
.65
.68
.69
-36
-56
-78
-97
-113
-127
-144
-168
168
147
124
103
80
6.9
7.4
7.6
7.2
6.8
6.4
6.4
6.2
5.8
5.2
4.9
4.6
4.0
3.3
2.9
2.3
1.3
2.21
2.35
2.39
2.30
2.20
2.10
2.08
2.03
1.96
1.81
1.76
1.70
1.58
1.46
1.40
1.30
1.16
142
123
103
86
71
56
41
23
6
-10
-22
-36
-54
-72
-83
-99
-112
-26.6
-23.0
-20.6
-19.5
-18.9
-18.4
-17.9
-17.5
-17.3
-17.2
-17.1
-16.7
-16.3
-16.3
-16.3
-16.0
-15.9
.047
.071
.093
.106
.114
.120
.128
.134
.136
.138
.140
.146
.153
.153
.153
.158
.159
64
50
36
25
16
9
.81
.77
.70
.66
.62
.61
.58
.54
.47
.41
.39
.37
.35
.35
.37
.41
.47
-25
-38
-50
-61
-70
-78
-88
1
-8
-101
-116
-133
-143
-154
-171
173
132
101
87
-16
-22
-26
-31
-37
-42
-48
-56
-72
65
52
40
30
Typical Scattering Parameters, Common Emitter, ZO = 50 Ω,TA = 25°C, VDS = 5V,IDS = 30mA
Freq.
GHz
S11
S21
Mag.
S12
Mag.
S22
Mag.
Ang.
dB
Ang.
dB
Ang.
Mag.
Ang.
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
.94
.87
.79
.71
.64
.57
.52
.48
.48
.48
.49
.53
.57
.62
.70
.75
.74
-41
-65
-89
-109
-126
-142
-162
174
149
130
108
88
9.2
9.5
9.3
8.7
8.1
7.5
7.2
6.9
6.5
5.9
5.6
5.2
4.7
4.1
3.7
3.0
2.3
2.88
2.97
2.93
2.73
2.54
2.38
2.30
2.21
2.11
1.97
1.91
1.82
1.71
1.60
1.53
1.41
1.30
138
118
97
79
64
50
35
18
1
-14
-25
-39
-55
-75
-87
-103
-117
-30.8
-27.3
-25.5
-24.9
-24.4
-24.0
-23.1
-21.9
-20.4
-19.7
-18.1
-16.2
-15.2
-14.8
-13.8
-12.9
-13.6
.029
.043
.053
.057
.060
.063
.070
.080
.095
.104
.125
.155
.173
.182
.205
.226
.210
65
51
40
35
33
31
30
28
24
22
20
18
5
.84
.80
.74
.71
.69
.69
.69
.67
.63
.57
.55
.54
.52
.52
.52
.54
.63
-23
-34
-44
-53
-60
-67
-76
-87
-100
-114
-122
-132
-146
-165
165
135
114
69
56
44
33
-1
-16
-28
-44
24
A model for this device is available in the DEVICE MODELS section.
5-73
84 Plastic Package Dimensions
0.51 (0.020)
4
SOURCE
GATE
1
DRAIN
3
2
SOURCE
2.15
(0.085)
0.20 ± 0.050
(0.008 ± 0.002)
5°
1.52 ± 0.25
(0.060 ± 0.010)
5.46 ± 0.25
(0.215 ± 0.010)
0.51
(0.020)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
5-74
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