ATF-26884-TR1 [AGILENT]

2-16 GHz General Purpose Gallium Arsenide FET; 2-16 GHz的通用砷化镓场效应管
ATF-26884-TR1
型号: ATF-26884-TR1
厂家: AGILENT TECHNOLOGIES, LTD.    AGILENT TECHNOLOGIES, LTD.
描述:

2-16 GHz General Purpose Gallium Arsenide FET
2-16 GHz的通用砷化镓场效应管

晶体 晶体管
文件: 总4页 (文件大小:46K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2–16 GHz General Purpose  
Gallium Arsenide FET  
Technical Data  
ATF-26884  
housed in a cost effective  
microstrip package. This device is  
Features  
• High Output Power:  
84 Plastic Package  
designed for use in oscillator  
applications and general purpose  
amplifier applications in the  
2-16 GHzfrequencyrange.  
18.0 dBmTypicalP 1dB at12 GHz  
• High Gain:  
9.0dBTypicalGSS at12 GHz  
• Low Cost Plastic Package  
This GaAs FET device has a  
nominal 0.3 micron gate length  
with a total gate periphery of  
250 microns.Provengoldbased  
metallization systems and nitride  
passivation assure a rugged,  
reliable device.  
• Tape-and-Reel Packaging  
Option Available[1]  
Description  
The ATF-26884 is a high perfor-  
mance gallium arsenide Schottky-  
barrier-gate field effect transistor  
Electrical Specifications, TA = 25°C  
Symbol  
Parameters and Test Conditions  
Units Min. Typ. Max.  
GSS  
Tuned Small Signal Gain: VDS = 5 V, IDS = 30 mA  
Optimum Noise Figure: VDS = 3 V, IDS = 10 mA  
f=12.0GHz dB  
7.0  
9.0  
NFO  
GA  
f=12.0GHz dB  
f=12.0GHz dB  
2.2  
6.0  
Gain @ NFO: VDS = 3 V, I = 10 mA  
DS  
P1 dB  
Power Output @ 1 dB Gain Compression:  
VDS =5V, IDS =30mA  
f=12.0GHz dBm 15.0  
18.0  
gm  
IDSS  
VP  
Transconductance: VDS = 3 V, VGS = 0 V  
Saturated Drain Current: VDS = 3 V, VGS = 0 V  
Pinch-off Voltage: VDS = 3 V, IDS = 1 mA  
mmho 15  
35  
50  
mA  
V
30  
90  
-3.5  
-1.5  
-0.5  
Note:  
1. Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors.”  
5-71  
5965-8703E  
ATF-26884 Absolute Maximum Ratings  
Notes:  
Absolute  
Maximum[1]  
+7  
1. Permanent damage may occur if  
any of these limits are exceeded.  
2. TCASE TEMPERATURE = 25°C.  
3. Derate at 3.3 mW/°C for  
TCASE >92.5°C.  
4. The small spot size of this tech-  
nique results in a higher, though  
more accurate determination of θjc  
than do alternate methods. See  
MEASUREMENTS section for  
more information.  
Symbol  
VDS  
VGS  
VGD  
IDS  
PT  
TCH  
TSTG  
Parameter  
Units  
V
Drain-Source Voltage  
Gate-Source Voltage  
Gate-Drain Voltage  
Drain Current  
Power Dissipation[2,3]  
Channel Temperature  
Storage Temperature  
V
V
mA  
mW  
°C  
-4  
-8  
IDSS  
275  
175  
°C  
-65to+150  
Thermal Resistance:  
Liquid Crystal Measurement:  
θjc =300°C/W;TCH=150°C  
1 µmSpotSize[4]  
Part Number Ordering Information  
Part Number  
ATF-26884-TR1  
ATF-26884-STR  
Devices Per Reel  
Reel Size  
7"  
1000  
10  
strip  
ATF-26884 Typical Performance, TA = 25°C  
25  
20  
15  
10  
5
25  
20  
15  
10  
5
MSG  
MSG  
MSG  
MAG  
MAG  
MSG  
MAG  
2
|
|S  
21  
2
|
|S  
21  
0
0
2.0  
4.0  
6.0 8.0 10.0 12.0 16.0  
2.0  
4.0  
6.0 8.0 10.0 12.0 16.0  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Figure 1. Insertion Power Gain,  
Maximum Available Gain and  
Maximum Stable Gain vs. Frequency.  
VDS = 3 V, IDS = 10 mA.  
Figure 2. Insertion Power Gain,  
Maximum Available Gain and  
Maximum Stable Gain vs. Frequency.  
VDS = 5 V, IDS = 30 mA.  
5-72  
Typical Scattering Parameters, Common Emitter, ZO = 50 ,TA = 25°C, VDS = 3V,IDS = 10mA  
Freq.  
GHz  
S11  
S21  
Mag.  
S12  
Mag.  
S22  
Mag.  
Ang.  
dB  
Ang.  
dB  
Ang.  
Mag.  
Ang.  
2.0  
3.0  
4.0  
5.0  
6.0  
7.0  
8.0  
9.0  
10.0  
11.0  
12.0  
13.0  
14.0  
15.0  
16.0  
17.0  
18.0  
.96  
.91  
.86  
.79  
.73  
.67  
.62  
.57  
.53  
.52  
.49  
.52  
.56  
.60  
.65  
.68  
.69  
-36  
-56  
-78  
-97  
-113  
-127  
-144  
-168  
168  
147  
124  
103  
80  
6.9  
7.4  
7.6  
7.2  
6.8  
6.4  
6.4  
6.2  
5.8  
5.2  
4.9  
4.6  
4.0  
3.3  
2.9  
2.3  
1.3  
2.21  
2.35  
2.39  
2.30  
2.20  
2.10  
2.08  
2.03  
1.96  
1.81  
1.76  
1.70  
1.58  
1.46  
1.40  
1.30  
1.16  
142  
123  
103  
86  
71  
56  
41  
23  
6
-10  
-22  
-36  
-54  
-72  
-83  
-99  
-112  
-26.6  
-23.0  
-20.6  
-19.5  
-18.9  
-18.4  
-17.9  
-17.5  
-17.3  
-17.2  
-17.1  
-16.7  
-16.3  
-16.3  
-16.3  
-16.0  
-15.9  
.047  
.071  
.093  
.106  
.114  
.120  
.128  
.134  
.136  
.138  
.140  
.146  
.153  
.153  
.153  
.158  
.159  
64  
50  
36  
25  
16  
9
.81  
.77  
.70  
.66  
.62  
.61  
.58  
.54  
.47  
.41  
.39  
.37  
.35  
.35  
.37  
.41  
.47  
-25  
-38  
-50  
-61  
-70  
-78  
-88  
1
-8  
-101  
-116  
-133  
-143  
-154  
-171  
173  
132  
101  
87  
-16  
-22  
-26  
-31  
-37  
-42  
-48  
-56  
-72  
65  
52  
40  
30  
Typical Scattering Parameters, Common Emitter, ZO = 50 ,TA = 25°C, VDS = 5V,IDS = 30mA  
Freq.  
GHz  
S11  
S21  
Mag.  
S12  
Mag.  
S22  
Mag.  
Ang.  
dB  
Ang.  
dB  
Ang.  
Mag.  
Ang.  
2.0  
3.0  
4.0  
5.0  
6.0  
7.0  
8.0  
9.0  
10.0  
11.0  
12.0  
13.0  
14.0  
15.0  
16.0  
17.0  
18.0  
.94  
.87  
.79  
.71  
.64  
.57  
.52  
.48  
.48  
.48  
.49  
.53  
.57  
.62  
.70  
.75  
.74  
-41  
-65  
-89  
-109  
-126  
-142  
-162  
174  
149  
130  
108  
88  
9.2  
9.5  
9.3  
8.7  
8.1  
7.5  
7.2  
6.9  
6.5  
5.9  
5.6  
5.2  
4.7  
4.1  
3.7  
3.0  
2.3  
2.88  
2.97  
2.93  
2.73  
2.54  
2.38  
2.30  
2.21  
2.11  
1.97  
1.91  
1.82  
1.71  
1.60  
1.53  
1.41  
1.30  
138  
118  
97  
79  
64  
50  
35  
18  
1
-14  
-25  
-39  
-55  
-75  
-87  
-103  
-117  
-30.8  
-27.3  
-25.5  
-24.9  
-24.4  
-24.0  
-23.1  
-21.9  
-20.4  
-19.7  
-18.1  
-16.2  
-15.2  
-14.8  
-13.8  
-12.9  
-13.6  
.029  
.043  
.053  
.057  
.060  
.063  
.070  
.080  
.095  
.104  
.125  
.155  
.173  
.182  
.205  
.226  
.210  
65  
51  
40  
35  
33  
31  
30  
28  
24  
22  
20  
18  
5
.84  
.80  
.74  
.71  
.69  
.69  
.69  
.67  
.63  
.57  
.55  
.54  
.52  
.52  
.52  
.54  
.63  
-23  
-34  
-44  
-53  
-60  
-67  
-76  
-87  
-100  
-114  
-122  
-132  
-146  
-165  
165  
135  
114  
69  
56  
44  
33  
-1  
-16  
-28  
-44  
24  
A model for this device is available in the DEVICE MODELS section.  
5-73  
84 Plastic Package Dimensions  
0.51 (0.020)  
4
SOURCE  
GATE  
1
DRAIN  
3
2
SOURCE  
2.15  
(0.085)  
0.20 ± 0.050  
(0.008 ± 0.002)  
5°  
1.52 ± 0.25  
(0.060 ± 0.010)  
5.46 ± 0.25  
(0.215 ± 0.010)  
0.51  
(0.020)  
DIMENSIONS ARE IN MILLIMETERS (INCHES)  
5-74  

相关型号:

ATF-33143

Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Low Noise Figure
AVAGO

ATF-33143-BLK

Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
AGILENT

ATF-33143-BLKG

Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
AVAGO

ATF-33143-BLKG

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC, SC-70, 4 PIN
AGILENT

ATF-33143-TR1

Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
AGILENT

ATF-33143-TR1G

Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
AVAGO

ATF-33143-TR2

Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
AGILENT

ATF-33143-TR2G

X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET, LEAD FREE, PLASTIC, SC-70, 4 PIN
AVAGO

ATF-33143-TR2G

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC, SC-70, 4 PIN
AGILENT

ATF-331M4

PHEMT Low Noise +31 dBm OIP3 in MiniPak
ETC

ATF-331M4-BLK

Agilent ATF-331M4 Low Noise Pseudomorphic HEMT in a Miniature Leadless Package
AGILENT

ATF-331M4-BLKG

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, MINIPAK-4
AGILENT