ATF-26836-TR1 [AGILENT]
2-16 GHz General Purpose Gallium Arsenide FET; 2-16 GHz的通用砷化镓场效应管
| 型号： | ATF-26836-TR1 |
| 厂家： | 
AGILENT TECHNOLOGIES, LTD. |
| 描述： | 2-16 GHz General Purpose Gallium Arsenide FET |
| 文件： | 总4页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2–16 GHz General Purpose
Gallium Arsenide FET
Technical Data
ATF-26836
Features
• High Output Power:
Description
The ATF-26836 is a high perfor-
36 micro-X Package
18.0 dBmTypicalP 1dB at12 GHz mance gallium arsenide Schottky-
barrier-gate field effect transistor
• High Gain:
housed in a cost effective
9.0dBTypicalGSS at12 GHz
microstrip package. This device is
• Cost Effective Ceramic
designed for use in oscillator
applications and general purpose
Microstrip Package
• Tape-and-Reel Packaging
Option Available[1]
amplifier applications in the
2-16 GHzfrequencyrange.
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
250 microns.Provengoldbased
metallization systems and nitride
passivation assure a rugged,
reliable device.
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
Units Min. Typ. Max.
GSS
Tuned Small Signal Gain: VDS = 5 V, IDS = 30 mA
Optimum Noise Figure: VDS = 3 V, IDS = 10 mA
f=12.0GHz dB
7.0
9.0
NFO
GA
f=12.0GHz dB
f=12.0GHz dB
2.2
6.0
Gain @ NFO: VDS = 3 V, I = 10 mA
DS
P1 dB
Power Output @ 1 dB Gain Compression:
VDS =5V, IDS =30mA
f=12.0GHz dBm 15.0
18.0
gm
IDSS
VP
Transconductance: VDS = 3 V, VGS = 0 V
Saturated Drain Current: VDS = 3 V, VGS = 0 V
Pinch-off Voltage: VDS = 3 V, IDS = 1 mA
mmho 15
35
50
mA
V
30
90
-3.5
-1.5
-0.5
Note:
1. Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors.”
5-67
5965-8704E
ATF-26836 Absolute Maximum Ratings
Notes:
Absolute
Maximum[1]
+7
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE=25°C.
3. Derate at 2.9 mW/°C for
TCASE >79°C.
4. Storage above +150°C may tarnish
the leads of this package difficult to
solder into a circuit. After a device
has been soldered into a circuit, it
may be safely stored up to 175°C.
Symbol
VDS
VGS
VGD
IDS
PT
TCH
TSTG
Parameter
Units
V
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
Power Dissipation[2,3]
Channel Temperature
Storage Temperature[4]
V
V
mA
mW
°C
-4
-8
IDSS
275
175
°C
-65to+175
5. The small spot size of this tech-
nique results in a higher, though
more accurate determination of θjc
than do alternate methods. See
MEASUREMENTS section for
more information.
Thermal Resistance:
Liquid Crystal Measurement:
θjc =350°C/W;TCH=150°C
1 µmSpotSize[5]
Part Number Ordering Information
Part Number
ATF-26836-TR1
ATF-26836-STR
Devices Per Reel
Reel Size
7"
1000
10
strip
ATF-26836 Typical Performance, TA = 25°C
25
20
15
10
5
25
20
15
10
5
MSG
MSG
MAG
2
|
2
|
|S
|S
21
21
0
0
2.0
4.0
6.0 8.0 10.0 12.0 16.0
2.0
4.0
6.0 8.0 10.0 12.0 16.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 1. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 5 V, IDS = 30 mA.
Figure 2. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 3 V, IDS = 10 mA.
5-68
Typical Scattering Parameters, Common Emitter, ZO = 50 Ω,TA = 25°C, VDS = 3V,IDS = 10mA
Freq.
GHz
S11
S21
Mag.
S12
Mag.
S22
Mag.
Ang.
dB
Ang.
dB
Ang.
Mag.
Ang.
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
.94
.90
.84
.75
.64
.52
.49
.52
.56
.61
.67
.69
.72
.72
.72
-38
-55
-72
-92
-117
-155
163
126
100
78
8.2
7.8
7.6
8.0
8.1
8.3
7.9
7.2
6.4
5.6
4.7
3.9
3.0
2.5
2.0
2.57
2.45
2.41
2.50
2.55
2.60
2.47
2.30
2.10
1.91
1.71
1.57
1.42
1.33
1.26
138
120
102
82
61
37
-27.1
-24.9
-22.9
-20.6
-19.3
-18.1
-17.5
-16.9
-16.8
-17.1
-17.1
-17.3
-17.2
-17.2
-17.4
.044
.057
.072
.093
.109
.124
.133
.143
.144
.140
.139
.137
.138
.138
.135
60
51
44
30
15
.74
.71
.71
.66
.60
.51
.41
.30
.24
.18
.15
.17
.19
.23
.27
-26
-35
-44
-53
-64
-78
-92
-106
-125
-154
168
134
107
89
5
14
-7
-12
-21
-32
-41
-49
-61
-66
-77
-85
-28
-47
-66
-83
-98
-115
-128
58
45
35
22
13
71
Typical Scattering Parameters, Common Emitter, ZO = 50 Ω,TA = 25°C, VDS = 5V,IDS = 30mA
Freq.
GHz
S11
S21
Mag.
S12
Mag.
S22
Mag.
Ang.
dB
Ang.
dB
Ang.
Mag.
Ang.
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
.94
.86
.78
.68
.57
.43
.37
.40
.47
.55
.61
.71
.71
.65
.58
-44
-63
-81
-97
-118
-151
165
122
96
75
53
33
10
9.0
8.5
8.0
7.9
8.1
8.5
8.5
8.0
7.7
7.5
7.4
7.4
6.7
5.7
4.2
2.82
2.65
2.51
2.49
2.53
2.65
2.66
2.52
2.42
2.37
2.35
2.34
2.17
1.93
1.62
130
110
89
71
51
-30.2
-28.4
-26.9
-25.5
-24.4
-22.4
-20.6
-18.0
-16.4
-15.1
-13.8
-13.2
-13.5
-14.0
-14.9
.031
.038
.045
.053
.060
.076
.093
.126
.152
.176
.205
.220
.212
.200
.180
65
56
47
41
39
38
30
15
3
.80
.80
.79
.78
.76
.73
.69
.64
.66
.63
.64
.71
.78
.85
.98
-31
-43
-52
-58
-67
-80
-99
-119
-140
-166
168
132
104
79
28
3
-20
-42
-66
-88
-116
-143
-170
166
-4
-19
-39
-56
-72
-93
-10
-30
61
A model for this device is available in the DEVICE MODELS section.
5-69
36 micro-X Package Dimensions
2.15
(0.085)
SOURCE
4
2.11 (0.083) DIA.
DRAIN
3
1
GATE
0.508
(0.020)
2
SOURCE
1.45 ± 0.25
(0.057 ± 0.010)
2.54
(0.100)
0.15 ± 0.05
(0.006 ± 0.002)
0.56
(0.022)
4.57 ± 0.25
0.180 ± 0.010
Notes:
1. Dimensions are in millimeters (inches)
2. Tolerances: in .xxx = ± 0.005
mm .xx = ± 0.13
5-70
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