ATF-26836-TR1 [AGILENT]

2-16 GHz General Purpose Gallium Arsenide FET; 2-16 GHz的通用砷化镓场效应管
ATF-26836-TR1
型号: ATF-26836-TR1
厂家: AGILENT TECHNOLOGIES, LTD.    AGILENT TECHNOLOGIES, LTD.
描述:

2-16 GHz General Purpose Gallium Arsenide FET
2-16 GHz的通用砷化镓场效应管

晶体 晶体管
文件: 总4页 (文件大小:49K)
中文:  中文翻译
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2–16 GHz General Purpose  
Gallium Arsenide FET  
Technical Data  
ATF-26836  
Features  
• High Output Power:  
Description  
The ATF-26836 is a high perfor-  
36 micro-X Package  
18.0 dBmTypicalP 1dB at12 GHz mance gallium arsenide Schottky-  
barrier-gate field effect transistor  
• High Gain:  
housed in a cost effective  
9.0dBTypicalGSS at12 GHz  
microstrip package. This device is  
• Cost Effective Ceramic  
designed for use in oscillator  
applications and general purpose  
Microstrip Package  
• Tape-and-Reel Packaging  
Option Available[1]  
amplifier applications in the  
2-16 GHzfrequencyrange.  
This GaAs FET device has a  
nominal 0.3 micron gate length  
with a total gate periphery of  
250 microns.Provengoldbased  
metallization systems and nitride  
passivation assure a rugged,  
reliable device.  
Electrical Specifications, TA = 25°C  
Symbol  
Parameters and Test Conditions  
Units Min. Typ. Max.  
GSS  
Tuned Small Signal Gain: VDS = 5 V, IDS = 30 mA  
Optimum Noise Figure: VDS = 3 V, IDS = 10 mA  
f=12.0GHz dB  
7.0  
9.0  
NFO  
GA  
f=12.0GHz dB  
f=12.0GHz dB  
2.2  
6.0  
Gain @ NFO: VDS = 3 V, I = 10 mA  
DS  
P1 dB  
Power Output @ 1 dB Gain Compression:  
VDS =5V, IDS =30mA  
f=12.0GHz dBm 15.0  
18.0  
gm  
IDSS  
VP  
Transconductance: VDS = 3 V, VGS = 0 V  
Saturated Drain Current: VDS = 3 V, VGS = 0 V  
Pinch-off Voltage: VDS = 3 V, IDS = 1 mA  
mmho 15  
35  
50  
mA  
V
30  
90  
-3.5  
-1.5  
-0.5  
Note:  
1. Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors.”  
5-67  
5965-8704E  
ATF-26836 Absolute Maximum Ratings  
Notes:  
Absolute  
Maximum[1]  
+7  
1. Permanent damage may occur if  
any of these limits are exceeded.  
2. TCASE=25°C.  
3. Derate at 2.9 mW/°C for  
TCASE >79°C.  
4. Storage above +150°C may tarnish  
the leads of this package difficult to  
solder into a circuit. After a device  
has been soldered into a circuit, it  
may be safely stored up to 175°C.  
Symbol  
VDS  
VGS  
VGD  
IDS  
PT  
TCH  
TSTG  
Parameter  
Units  
V
Drain-Source Voltage  
Gate-Source Voltage  
Gate-Drain Voltage  
Drain Current  
Power Dissipation[2,3]  
Channel Temperature  
Storage Temperature[4]  
V
V
mA  
mW  
°C  
-4  
-8  
IDSS  
275  
175  
°C  
-65to+175  
5. The small spot size of this tech-  
nique results in a higher, though  
more accurate determination of θjc  
than do alternate methods. See  
MEASUREMENTS section for  
more information.  
Thermal Resistance:  
Liquid Crystal Measurement:  
θjc =350°C/W;TCH=150°C  
1 µmSpotSize[5]  
Part Number Ordering Information  
Part Number  
ATF-26836-TR1  
ATF-26836-STR  
Devices Per Reel  
Reel Size  
7"  
1000  
10  
strip  
ATF-26836 Typical Performance, TA = 25°C  
25  
20  
15  
10  
5
25  
20  
15  
10  
5
MSG  
MSG  
MAG  
2
|
2
|
|S  
|S  
21  
21  
0
0
2.0  
4.0  
6.0 8.0 10.0 12.0 16.0  
2.0  
4.0  
6.0 8.0 10.0 12.0 16.0  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Figure 1. Insertion Power Gain,  
Maximum Available Gain and  
Maximum Stable Gain vs. Frequency.  
VDS = 5 V, IDS = 30 mA.  
Figure 2. Insertion Power Gain,  
Maximum Available Gain and  
Maximum Stable Gain vs. Frequency.  
VDS = 3 V, IDS = 10 mA.  
5-68  
Typical Scattering Parameters, Common Emitter, ZO = 50 ,TA = 25°C, VDS = 3V,IDS = 10mA  
Freq.  
GHz  
S11  
S21  
Mag.  
S12  
Mag.  
S22  
Mag.  
Ang.  
dB  
Ang.  
dB  
Ang.  
Mag.  
Ang.  
2.0  
3.0  
4.0  
5.0  
6.0  
7.0  
8.0  
9.0  
10.0  
11.0  
12.0  
13.0  
14.0  
15.0  
16.0  
.94  
.90  
.84  
.75  
.64  
.52  
.49  
.52  
.56  
.61  
.67  
.69  
.72  
.72  
.72  
-38  
-55  
-72  
-92  
-117  
-155  
163  
126  
100  
78  
8.2  
7.8  
7.6  
8.0  
8.1  
8.3  
7.9  
7.2  
6.4  
5.6  
4.7  
3.9  
3.0  
2.5  
2.0  
2.57  
2.45  
2.41  
2.50  
2.55  
2.60  
2.47  
2.30  
2.10  
1.91  
1.71  
1.57  
1.42  
1.33  
1.26  
138  
120  
102  
82  
61  
37  
-27.1  
-24.9  
-22.9  
-20.6  
-19.3  
-18.1  
-17.5  
-16.9  
-16.8  
-17.1  
-17.1  
-17.3  
-17.2  
-17.2  
-17.4  
.044  
.057  
.072  
.093  
.109  
.124  
.133  
.143  
.144  
.140  
.139  
.137  
.138  
.138  
.135  
60  
51  
44  
30  
15  
.74  
.71  
.71  
.66  
.60  
.51  
.41  
.30  
.24  
.18  
.15  
.17  
.19  
.23  
.27  
-26  
-35  
-44  
-53  
-64  
-78  
-92  
-106  
-125  
-154  
168  
134  
107  
89  
5
14  
-7  
-12  
-21  
-32  
-41  
-49  
-61  
-66  
-77  
-85  
-28  
-47  
-66  
-83  
-98  
-115  
-128  
58  
45  
35  
22  
13  
71  
Typical Scattering Parameters, Common Emitter, ZO = 50 ,TA = 25°C, VDS = 5V,IDS = 30mA  
Freq.  
GHz  
S11  
S21  
Mag.  
S12  
Mag.  
S22  
Mag.  
Ang.  
dB  
Ang.  
dB  
Ang.  
Mag.  
Ang.  
2.0  
3.0  
4.0  
5.0  
6.0  
7.0  
8.0  
9.0  
10.0  
11.0  
12.0  
13.0  
14.0  
15.0  
16.0  
.94  
.86  
.78  
.68  
.57  
.43  
.37  
.40  
.47  
.55  
.61  
.71  
.71  
.65  
.58  
-44  
-63  
-81  
-97  
-118  
-151  
165  
122  
96  
75  
53  
33  
10  
9.0  
8.5  
8.0  
7.9  
8.1  
8.5  
8.5  
8.0  
7.7  
7.5  
7.4  
7.4  
6.7  
5.7  
4.2  
2.82  
2.65  
2.51  
2.49  
2.53  
2.65  
2.66  
2.52  
2.42  
2.37  
2.35  
2.34  
2.17  
1.93  
1.62  
130  
110  
89  
71  
51  
-30.2  
-28.4  
-26.9  
-25.5  
-24.4  
-22.4  
-20.6  
-18.0  
-16.4  
-15.1  
-13.8  
-13.2  
-13.5  
-14.0  
-14.9  
.031  
.038  
.045  
.053  
.060  
.076  
.093  
.126  
.152  
.176  
.205  
.220  
.212  
.200  
.180  
65  
56  
47  
41  
39  
38  
30  
15  
3
.80  
.80  
.79  
.78  
.76  
.73  
.69  
.64  
.66  
.63  
.64  
.71  
.78  
.85  
.98  
-31  
-43  
-52  
-58  
-67  
-80  
-99  
-119  
-140  
-166  
168  
132  
104  
79  
28  
3
-20  
-42  
-66  
-88  
-116  
-143  
-170  
166  
-4  
-19  
-39  
-56  
-72  
-93  
-10  
-30  
61  
A model for this device is available in the DEVICE MODELS section.  
5-69  
36 micro-X Package Dimensions  
2.15  
(0.085)  
SOURCE  
4
2.11 (0.083) DIA.  
DRAIN  
3
1
GATE  
0.508  
(0.020)  
2
SOURCE  
1.45 ± 0.25  
(0.057 ± 0.010)  
2.54  
(0.100)  
0.15 ± 0.05  
(0.006 ± 0.002)  
0.56  
(0.022)  
4.57 ± 0.25  
0.180 ± 0.010  
Notes:  
1. Dimensions are in millimeters (inches)  
2. Tolerances: in .xxx = ± 0.005  
mm .xx = ± 0.13  
5-70  

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