ATF-25570 [AGILENT]
0.5-10 GHz General Purpose Gallium Arsenide FET; 0.5〜10 GHz的通用砷化镓场效应管
| 型号： | ATF-25570 |
| 厂家： | 
AGILENT TECHNOLOGIES, LTD. |
| 描述： | 0.5-10 GHz General Purpose Gallium Arsenide FET |
| 文件： | 总3页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
0.5–10 GHz General Purpose
Gallium Arsenide FET
Technical Data
ATF-25570
ity package. This device is
designed for use in general
purpose amplifier and oscillator
applications in the 0.5-10 GHz
frequency range.
Features
70 mil Package
• High Output Power:
20.5 dBm Typical P1 dB at 4 GHz
• Low Noise Figure:
1.0 dB Typical at 4 GHz
• High Associated Gain:
This GaAs FET device has a
nominal 0.3 micron gate length
using airbridge interconnects
between drain fingers. Total gate
periphery is 500 microns. Proven
gold based metallization systems
and nitride passivation assure a
rugged, reliable device.
14.0 dBTypicalat4 GHz
• Hermetic Gold-Ceramic
Microstrip Package
Description
The ATF-25570 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
housed in a hermetic, high reliabil-
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
Units Min. Typ. Max.
NFO
Optimum Noise Figure: VDS = 3 V, IDS = 20 mA
f=4.0GHz
f=6.0GHz
f=8.0GHz
dB
1.0
1.2
1.4
1.3
GA
Gain @ NFO: VDS = 3 V, IDS = 20 mA
f=4.0GHz
f=6.0GHz
f=8.0GHz
dB
13.0
14.0
11.0
8.5
P1 dB
Power Output @ 1 dB Gain Compression:
VDS =5V,IDS =50mA
f=4.0GHz dBm
20.5
G1 dB
gm
1 dB Compressed Gain: VDS =5 V, IDS =50 mA
Transconductance: VDS =3 V, VGS = 0 V
Saturated Drain Current: VDS = 3 V, VGS = 0 V
Pinch-off Voltage: VDS = 3 V, IDS = 1 mA
f=4.0GHz
dB
mmho 50
13.0
80
IDSS
VP
mA
V
50
100
-2.0
150
-0.8
-3.0
5965-8711E
5-60
ATF-25570 Absolute Maximum Ratings
Notes:
Absolute
Maximum[1]
+7
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE TEMPERATURE = 25°C.
3. Derate at 3.3 mW/°C for
TCASE >40°C.
4. The small spot size of this tech-
nique results in a higher, though
more accurate determination of θjc
than do alternate methods. See
MEASUREMENTS section for
more information.
Symbol
VDS
VGS
VGD
IDS
PT
TCH
TSTG
Parameter
Units
V
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
Power Dissipation[2,3]
Channel Temperature
Storage Temperature
V
V
mA
mW
°C
-4
-8
IDSS
450
175
°C
-65to+175
Thermal Resistance:
Liquid Crystal Measurement:
θjc =300°C/W;TCH=150°C
1 µmSpotSize[4]
ATF-25570 Typical Performance, TA = 25°C
25
20
15
10
5
25
20
15
10
5
MSG
MSG
MAG
2
|
|S
21
MAG
2
|
|S
21
0
0
0.5
1.0
2.0
4.0
6.0 8.0
12.0
0.5
1.0
2.0
4.0 6.0 8.0 12.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 1. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 3 V, IDS = 20 mA.
Figure 2. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 5 V, IDS = 50 mA.
5-61
Typical Scattering Parameters, Common Emitter, ZO = 50 Ω,TA = 25°C, VDS = 3V,IDS = 20mA
Freq.
GHz
S11
Ang.
S21
Mag.
S12
Mag.
S22
Mag.
dB
Ang.
dB
Ang.
Mag.
Ang.
0.5
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
.98
.96
.84
.78
.72
.68
.63
.60
.58
.59
.60
.60
.59
-24
-41
-76
14.0
13.4
12.3
10.8
9.6
8.5
7.8
7.2
6.3
5.6
4.7
4.1
3.9
5.02
4.70
4.14
3.48
3.01
2.67
2.45
2.30
2.06
1.90
1.72
1.61
1.56
160
145
115
94
73
54
36
18
-1
-19
-36
-48
-68
-28.9
-26.2
-22.5
-20.9
-19.8
-18.8
-18.3
-17.5
-17.0
-16.7
-16.4
-16.1
-15.9
.036
.049
.075
.090
.102
.114
.121
.133
.141
.146
.151
.157
.160
71
62
44
33
20
9
.56
.55
.49
.46
.42
.38
.35
.30
.26
.25
.26
.28
.30
-24
-33
-51
-60
-76
-88
-101
-118
-138
-167
172
-100
-123
-142
-162
175
150
128
113
104
91
0
-7
-16
-28
-35
-40
-44
9.0
10.0
11.0
12.0
155
146
Typical Scattering Parameters, Common Emitter, ZO = 50 Ω,TA = 25°C, VDS = 5V,IDS = 50mA
Freq.
GHz
S11
Ang.
S21
Mag.
S12
Mag.
S22
Mag.
dB
Ang.
dB
Ang.
Mag.
Ang.
0.5
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
.97
.94
.81
.73
.66
.61
.57
.56
.57
.59
.60
.60
.57
-27
-45
-82
16.2
15.5
13.5
11.7
10.3
9.2
8.5
7.6
6.8
6.0
6.49
5.95
4.72
3.86
3.29
2.88
2.65
2.41
2.19
2.00
1.82
1.72
1.67
156
141
111
91
70
52
34
16
-1
-18
-35
-47
-64
-32.0
-29.9
-26.2
-24.9
-23.4
-22.5
-21.6
-20.2
-19.2
-18.5
-17.8
-17.5
-16.9
.025
.032
.049
.057
.068
.075
.083
.097
.110
.119
.129
.134
.143
63
57
45
41
37
32
30
28
18
12
4
.59
.60
.58
.55
.52
.49
.48
.45
.42
.40
.40
.42
.44
-21
-28
-39
-50
-62
-72
-84
-98
-115
-136
-159
-176
173
-105
-128
-148
-170
167
145
127
115
108
93
9.0
10.0
11.0
12.0
5.2
4.7
4.5
1
-10
A model for this device is available in the DEVICE MODELS section.
70 mil Package Dimensions
.040
1.02
SOURCE
4
.020
.508
GATE
DRAIN
3
1
Notes:
(unless otherwise specified)
2
SOURCE
in
1. Dimensions are
mm
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.070
1.70
.004 ± .002
.10 ± .05
.495 ± .030
12.57 ± .76
.035
.89
5-62
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RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, LEAD FREE, PLASTIC, SC-70, 4 PIN
AGILENT
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