SI4947DY [VISHAY]
Dual P-Channel 30-V (D-S) Rated MOSFET; 双P通道30 - V（D -S ）额定的MOSFET
| 型号： | SI4947DY |
| 厂家： | 
VISHAY |
| 描述： | Dual P-Channel 30-V (D-S) Rated MOSFET |
| 文件： | 总4页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4947DY
Dual P-Channel 30-V (D-S) Rated MOSFET
Product Summary
VDS (V)
rDS(on) (W)
ID (A)
0.085 @ V = –10 V
"3.5
"2.5
GS
–30
0.19 @ V = –4.5 V
GS
S
1
S
2
SO-8
S
G
S
D
D
D
D
1
2
3
4
8
7
6
5
1
1
2
2
1
1
2
2
G
G
2
1
G
Top View
D
D
2
1
P-Channel MOSFET
P-Channel MOSFET
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
–30
DS
GS
V
"20
T
= 25_C
= 70_C
"3.5
"2.8
"20
A
a
Continuous Drain Current (T = 150_C)
I
J
D
T
A
A
Pulsed Drain Current
I
DM
a
Continuous Source Current (Diode Conduction)
I
S
–1.7
T
= 25_C
= 70_C
2.0
A
a
Maximum Power Dissipation
P
W
D
T
A
1.3
Operating Junction and Storage Temperature Range
T , T
J
–55 to 150
_C
stg
Thermal Resistance Ratings
Parameter
Symbol
Limit
Unit
a
Maximum Junction-to-Ambient
R
thJA
62.5
_C/W
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70156.
A SPICE Model data sheet is available for this product (FaxBack document #70554).
Siliconix
1
S-49520—Rev. C, 18-Dec-96
Si4947DY
Specifications (TJ = 25_C Unless Otherwise Noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = –250 mA
1.0
V
GS(th)
DS
GS
D
V
= 0 V, V = "20 V
GS
I
DS
"100
nA
GSS
V
= –30 V, V = 0 V
–1
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= –30 V, V = 0 V, T = 55_C
–25
DS
GS
J
b
On-State Drain Current
I
V
w –5 V, V = –10 V
–15
A
D(on)
DS
GS
V
= –10 V, I = 2.5 A
0.066
0.125
5.0
0.085
0.19
GS
GS
DS
D
b
Drain-Source On-State Resistance
r
W
DS(on)
V
= –4.5 V, I = 1.8 A
D
b
Forward Transconductance
g
V
= –15 V, I = –2.5 A
S
fs
D
b
Diode Forward Voltage
V
I
= –1.7 A, V = 0 V
–0.8
–1.2
15
V
SD
S
GS
Dynamica
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
8.7
1.9
1.3
7
g
Q
V
= –10 V, V = –10 V, I = –2.5 A
nC
ns
gs
gd
DS
GS
D
Q
t
15
18
27
15
80
d(on)
t
9
r
V
= –10 V, R = 10 W
L
DD
I
^ –1 A, V
= –10 V, R = 6 W
GEN G
D
Turn-Off Delay Time
Fall Time
t
14
8
d(off)
t
f
Source-Drain Reverse Recovery Time
t
I
= –1.7 A, di/dt = 100 A/ms
F
50
rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
2
Siliconix
S-49520—Rev. C, 18-Dec-96
Si4947DY
Typical Characteristics (25_C Unless Otherwise Noted)
Output Characteristics
Transfer Characteristics
20
16
12
8
20
16
12
8
V
= 10, 9, 8, 7, 6 V
T
C
= –55_C
GS
25_C
125_C
5 V
4 V
4
4
3 V
0
0
0
2
4
6
8
0
2
4
6
8
V
– Drain-to-Source Voltage (V)
V
– Gate-to-Source Voltage (V)
GS
DS
On-Resistance vs. Drain Current
Capacitance
0.40
0.32
0.24
0.16
0.08
0
700
600
500
400
300
200
100
0
C
iss
V
= 4.5 V
GS
C
oss
V
= 10 V
GS
C
rss
0
3
6
9
12
15
0
6
12
18
24
30
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
= 10 V
= 2.5 A
V
= 10 V
GS
DS
I
I = 2.5 A
D
D
6
4
2
0
0
2
4
6
8
10
–50 –25
0
25
50
75 100 125 150
Q
– Total Gate Charge (nC)
T – Junction Temperature (_C)
J
g
Siliconix
S-49520—Rev. C, 18-Dec-96
3
Si4947DY
Typical Characteristics (25_C Unless Otherwise Noted)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.5
0.4
0.3
0.2
0.1
0
20
10
I
= 2.5 A
D
T = 150_C
T = 25_C
J
J
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
V
– Source-to-Drain Voltage (V)
V
– Gate-to-Source Voltage (V)
GS
SD
Single Pulse Power
Threshold Voltage
0.8
0.6
30
25
I
D
= 250 mA
0.4
20
15
10
0.2
0.0
–0.2
–0.4
5
0
–50 –25
0
25
50
75 100 125 150
0.01
0.1
1
10
30
Time (sec)
T – Temperature (_C)
J
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
1. Duty Cycle, D =
2. Per Unit Base = R
2
0.02
= 62.5_C/W
thJA
(t)
3. T – T = P Z
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
1
10
30
Square Wave Pulse Duration (sec)
4
Siliconix
S-49520—Rev. C, 18-Dec-96
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