SI4948BEY [VISHAY]
Dual P-Channel 60-V (D-S) 175 MOSFET; 双P通道60 - V(D -S) 175的MOSFET![SI4948BEY](http://pdffile.icpdf.com/pdf1/p00076/img/icpdf/SI4948_397651_icpdf.jpg)
型号: | SI4948BEY |
厂家: | ![]() |
描述: | Dual P-Channel 60-V (D-S) 175 MOSFET |
文件: | 总5页 (文件大小:73K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Si4948BEY
Vishay Siliconix
New Product
Dual P-Channel 60-V (D-S) 175_ MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.120 @ V = −10 V
−3.1
−2.8
GS
−60
0.150 @ V = −4.5 V
GS
S
1
S
2
SO-8
S
G
S
D
1
D
1
D
2
D
2
1
2
3
4
8
7
6
5
1
1
2
2
G
G
2
1
G
Top View
D
1
D
2
Ordering Information: Si4948BEY—E3 (Lead Free)
Si4948BEY-T1—E3 (Lead Free with Tape and Reel)
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
−60
DS
V
V
GS
"20
T
= 25_C
= 70_C
−3.1
−2.6
−2.4
−2.0
A
a
Continuous Drain Current (T = 150_C)
I
D
J
T
A
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)
Avalanche Current
I
−25
A
DM
a
I
S
−2
−1.1
I
AS
15
11
L = 0.1 mH
Single Pulse Avalanche Energy
E
AS
mJ
T
= 25_C
= 70_C
2.4
1.7
1.4
A
a
Maximum Power Dissipation
P
W
D
T
A
0.95
Operating Junction and Storage Temperature Range
T , T
J
−55 to 175
_C
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
53
85
30
62.5
110
37
a
Maximum Junction-to-Ambient
R
thJA
R
thJF
_C/W
Maximum Junction-to-Foot
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72847
S-40430—Rev. A, 15-Mar-04
www.vishay.com
1
Si4948BEY
Vishay Siliconix
New Product
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = −250 mA
−1
−3
V
GS(th)
DS
GS
D
V
DS
= 0 V, V = "20 V
GS
I
"100
nA
GSS
V
= −60 V, V = 0 V
−1
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= −60 V, V = 0 V, T = 70_C
−10
GS
J
a
On-State Drain Current
I
V
DS
= −5 V, V = −10 V
−25
A
D(on)
GS
V
= −10 V, I = −3.1 A
0.100
0.126
0.120
0.150
GS
D
a
Drain-Source On-State Resistance
r
W
DS(on)
V
GS
= −4.5 V, I = −0.2 A
D
a
Forward Transconductance
g
V
= −15 V, I = −3.1 A
8.5
S
V
fs
DS
D
a
Diode Forward Voltage
V
SD
I
S
= −2 A, V = 0 V
−0.8
−1.2
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
14.5
2.2
3.7
14
22
g
Q
Q
V
= −30 V, V = −10 V, I = −3.1 A
nC
gs
gd
DS
GS
D
R
g
f = 1 MHz
W
t
10
15
22
75
55
50
d(on)
t
r
15
V
= −30 V, R = 30 W
L
GEN g
DD
I
D
^ −1 A, V
= −10 V, R = 6 W
Turn-Off Delay Time
Fall Time
t
50
ns
d(off)
t
f
35
Source-Drain Reverse Recovery Time
t
rr
I
F
= −2 A, di/dt = 100 A/ms
30
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
25
25
20
15
10
5
V
GS
= 10 thru 5 V
20
15
10
5
4 V
3 V
T
= 125_C
C
25_C
−55_C
0
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 72847
S-40430—Rev. A, 15-Mar-04
www.vishay.com
2
Si4948BEY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
1000
800
600
400
200
0
0.40
0.35
0.30
0.25
C
iss
V
= 4.5 V
GS
0.20
0.15
0.10
0.05
0.00
V
GS
= 10 V
C
oss
C
rss
0
5
10
15
20
25
0
10
20
30
40
50
60
I
D
− Drain Current (A)
V
DS
− Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 30 V
V
= 10 V
DS
GS
I
= 3.1 A
I = 3.1 A
D
6
4
2
0
0
3
6
9
12
15
−50 −25
0
25
50
75 100 125 150 175
Q
− Total Gate Charge (nC)
T
− Junction Temperature (_C)
g
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
20
10
T
= 150_C
J
I
D
= 3.1 A
T
= 25_C
J
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
− Source-to-Drain Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 72847
S-40430—Rev. A, 15-Mar-04
www.vishay.com
3
Si4948BEY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
50
40
0.6
0.4
I
D
= 250 mA
30
0.2
0.0
20
10
−0.2
−0.4
0
−3
−2
−1
−50 −25
0
25
50
75
100 125 150
10
10
10
1
10
100
600
T
− Temperature (_C)
Time (sec)
J
Safe Operating Area, Junction-to-Case
100
10
1
I
Limited
DM
Limited
by r
P(t) = 0.0001
P(t) = 0.001
DS(on)
I
P(t) = 0.01
P(t) = 0.1
D(on)
Limited
0.1
T
= 25_C
A
Single Pulse
P(t) = 1
P(t) = 10
dc
BV
DSS
Limited
0.01
0.1
1
10
100
V
DS
− Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 85_C/W
thJA
(t)
3. T − T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 72847
S-40430—Rev. A, 15-Mar-04
www.vishay.com
4
Si4948BEY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 72847
S-40430—Rev. A, 15-Mar-04
www.vishay.com
5
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