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SI4948BEY-T1-E3 [VISHAY]

Dual P-Channel 60-V (D-S) 175 MOSFET; 双P通道60 - V（D -S） 175的MOSFET
SI4948BEY-T1-E3
型号： SI4948BEY-T1-E3
厂家： VISHAY    VISHAY
描述：

Dual P-Channel 60-V (D-S) 175 MOSFET
双P通道60 - V（D -S） 175的MOSFET

晶体 小信号场效应晶体管 光电二极管 PC
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Si4948BEY  
Vishay Siliconix  
New Product  
Dual P-Channel 60-V (D-S) 175_ MOSFET  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.120 @ V = −10 V  
−3.1  
−2.8  
GS  
−60  
0.150 @ V = −4.5 V  
GS  
S
1
S
2
SO-8  
S
G
S
D
1
D
1
D
2
D
2
1
2
3
4
8
7
6
5
1
1
2
2
G
G
2
1
G
Top View  
D
1
D
2
Ordering Information: Si4948BEY—E3 (Lead Free)  
Si4948BEY-T1—E3 (Lead Free with Tape and Reel)  
P-Channel MOSFET  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
−60  
DS  
V
V
GS  
"20  
T
= 25_C  
= 70_C  
−3.1  
−2.6  
−2.4  
−2.0  
A
a
Continuous Drain Current (T = 150_C)  
I
D
J
T
A
Pulsed Drain Current (10 ms Pulse Width)  
Continuous Source Current (Diode Conduction)  
Avalanche Current  
I
−25  
A
DM  
a
I
S
−2  
−1.1  
I
AS  
15  
11  
L = 0.1 mH  
Single Pulse Avalanche Energy  
E
AS  
mJ  
T
= 25_C  
= 70_C  
2.4  
1.7  
1.4  
A
a
Maximum Power Dissipation  
P
W
D
T
A
0.95  
Operating Junction and Storage Temperature Range  
T , T  
J
−55 to 175  
_C  
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
53  
85  
30  
62.5  
110  
37  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJF  
_C/W  
Maximum Junction-to-Foot  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 72847  
S-40430—Rev. A, 15-Mar-04  
www.vishay.com  
1
Si4948BEY  
Vishay Siliconix  
New Product  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= V , I = −250 mA  
−1  
−3  
V
GS(th)  
DS  
GS  
D
V
DS  
= 0 V, V = "20 V  
GS  
I
"100  
nA  
GSS  
V
= −60 V, V = 0 V  
−1  
DS  
GS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
DS  
= −60 V, V = 0 V, T = 70_C  
−10  
GS  
J
a
On-State Drain Current  
I
V
DS  
= −5 V, V = −10 V  
−25  
A
D(on)  
GS  
V
= −10 V, I = −3.1 A  
0.100  
0.126  
0.120  
0.150  
GS  
D
a
Drain-Source On-State Resistance  
r
W
DS(on)  
V
GS  
= −4.5 V, I = −0.2 A  
D
a
Forward Transconductance  
g
V
= −15 V, I = −3.1 A  
8.5  
S
V
fs  
DS  
D
a
Diode Forward Voltage  
V
SD  
I
S
= −2 A, V = 0 V  
−0.8  
−1.2  
GS  
Dynamicb  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Gate Resistance  
Turn-On Delay Time  
Rise Time  
Q
14.5  
2.2  
3.7  
14  
22  
g
Q
Q
V
= −30 V, V = −10 V, I = −3.1 A  
nC  
gs  
gd  
DS  
GS  
D
R
g
f = 1 MHz  
W
t
10  
15  
22  
75  
55  
50  
d(on)  
t
r
15  
V
= −30 V, R = 30 W  
L
GEN g  
DD  
I
D
^ −1 A, V  
= −10 V, R = 6 W  
Turn-Off Delay Time  
Fall Time  
t
50  
ns  
d(off)  
t
f
35  
Source-Drain Reverse Recovery Time  
t
rr  
I
F
= −2 A, di/dt = 100 A/ms  
30  
Notes  
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
25  
25  
20  
15  
10  
5
V
GS  
= 10 thru 5 V  
20  
15  
10  
5
4 V  
3 V  
T
= 125_C  
C
25_C  
−55_C  
0
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
V
DS  
− Drain-to-Source Voltage (V)  
V
GS  
− Gate-to-Source Voltage (V)  
Document Number: 72847  
S-40430—Rev. A, 15-Mar-04  
www.vishay.com  
2
Si4948BEY  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistance vs. Drain Current  
Capacitance  
1000  
800  
600  
400  
200  
0
0.40  
0.35  
0.30  
0.25  
C
iss  
V
= 4.5 V  
GS  
0.20  
0.15  
0.10  
0.05  
0.00  
V
GS  
= 10 V  
C
oss  
C
rss  
0
5
10  
15  
20  
25  
0
10  
20  
30  
40  
50  
60  
I
D
− Drain Current (A)  
V
DS  
− Drain-to-Source Voltage (V)  
Gate Charge  
On-Resistance vs. Junction Temperature  
10  
8
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
D
= 30 V  
V
= 10 V  
DS  
GS  
I
= 3.1 A  
I = 3.1 A  
D
6
4
2
0
0
3
6
9
12  
15  
−50 −25  
0
25  
50  
75 100 125 150 175  
Q
− Total Gate Charge (nC)  
T
− Junction Temperature (_C)  
g
J
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.40  
0.35  
0.30  
0.25  
0.20  
0.15  
0.10  
0.05  
0.00  
20  
10  
T
= 150_C  
J
I
D
= 3.1 A  
T
= 25_C  
J
1
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0
2
4
6
8
10  
V
SD  
− Source-to-Drain Voltage (V)  
V
GS  
− Gate-to-Source Voltage (V)  
Document Number: 72847  
S-40430—Rev. A, 15-Mar-04  
www.vishay.com  
3
Si4948BEY  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Threshold Voltage  
Single Pulse Power  
50  
40  
0.6  
0.4  
I
D
= 250 mA  
30  
0.2  
0.0  
20  
10  
−0.2  
−0.4  
0
−3  
−2  
−1  
−50 −25  
0
25  
50  
75  
100 125 150  
10  
10  
10  
1
10  
100  
600  
T
− Temperature (_C)  
Time (sec)  
J
Safe Operating Area, Junction-to-Case  
100  
10  
1
I
Limited  
DM  
Limited  
by r  
P(t) = 0.0001  
P(t) = 0.001  
DS(on)  
I
P(t) = 0.01  
P(t) = 0.1  
D(on)  
Limited  
0.1  
T
= 25_C  
A
Single Pulse  
P(t) = 1  
P(t) = 10  
dc  
BV  
DSS  
Limited  
0.01  
0.1  
1
10  
100  
V
DS  
− Drain-to-Source Voltage (V)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
0.02  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 85_C/W  
thJA  
(t)  
3. T − T = P  
Z
JM  
A
DM thJA  
Single Pulse  
4. Surface Mounted  
0.01  
−4  
−3  
−2  
−1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Document Number: 72847  
S-40430—Rev. A, 15-Mar-04  
www.vishay.com  
4
Si4948BEY  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Normalized Thermal Transient Impedance, Junction-to-Foot  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
−4  
−3  
−2  
−1  
10  
10  
10  
10  
1
10  
Square Wave Pulse Duration (sec)  
Document Number: 72847  
S-40430—Rev. A, 15-Mar-04  
www.vishay.com  
5

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