SI4948EY [VISHAY]
Dual P-Channel 60-V (D-S), 175C MOSFET; 双P通道60 -V （D -S ） ， 175 2 C MOSFET
| 型号： | SI4948EY |
| 厂家： | 
VISHAY |
| 描述： | Dual P-Channel 60-V (D-S), 175C MOSFET |
| 文件： | 总4页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4948EY
Vishay Siliconix
Dual P-Channel 60-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.120 @ V = –10 V
"3.1
"2.8
GS
–60
0.150 @ V = –4.5 V
GS
S
1
S
2
SO-8
S
1
D
1
D
1
D
2
D
2
1
2
3
4
8
7
6
5
G
1
G
2
G
1
S
2
G
2
Top View
D
1
D
1
D
2
D
2
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
–60
"20
DS
GS
V
V
T
= 25_C
= 70_C
"3.1
"2.6
"30
A
a
Continuous Drain Current (T = 175_C)
I
J
D
T
A
A
Pulsed Drain Current
I
DM
a
Continuous Source Current (Diode Conduction)
I
S
–2.0
T
= 25_C
= 70_C
2.4
A
a
Maximum Power Dissipation
P
D
W
T
A
1.7
Operating Junction and Storage Temperature Range
T , T
–55 to 175
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
a
Maximum Junction-to-Ambient
R
thJA
62.5
_C/W
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 70166
S-99444—Rev. E, 29-Nov-99
www.vishay.com S FaxBack 408-970-5600
2-1
Si4948EY
Vishay Siliconix
SPECIFICATIONS (T = _2C5 UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
V
= V , I = –250 mA
–1
V
GS(th)
DS
GS
D
= 0 V, V = "20 V
I
"100
–2
nA
DS
GS
GSS
V
= –60 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
A
DSS
D(on)
DS(on)
V
= –60 V, V = 0 V, T = 55_C
–25
DS
GS
J
b
On-State Drain Current
I
V
DS
v –5 V, V = –10 V
–20
GS
V
= –10 V, I = –3.1 A
0.100
0.125
7.5
0.120
0.150
GS
GS
D
b
Drain-Source On-State Resistance
r
W
V
= –4.5 V, I = –2.8 A
D
b
Forward Transconductance
g
fs
V
= –15 V, I = –3.1 A
S
V
DS
D
b
Diode Forward Voltage
V
I
= –2.0 A, V = 0 V
–0.8
–1.2
25
SD
S
GS
Dynamica
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
g
16
4
Q
gs
Q
gd
V
= –30 V, V = –10 V, I = –3.1 A
nC
ns
DS
GS
D
1.6
8
t
15
20
50
25
90
d(on)
t
r
10
35
12
60
V
= –30 V, R = 30 W
L
= –10 V, R = 6 W
GEN G
DD
I
D
^ –1 A, V
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I = –2.0 A, di/dt = 100 A/ms
F
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
Document Number: 70166
S-99444—Rev. E, 29-Nov-99
www.vishay.com S FaxBack 408-970-5600
2-2
Si4948EY
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Output Characteristics
Transfer Characteristics
30
20
16
12
8
V
GS
= 10 thru 6 V
T
C
= –55_C
24
18
12
6
25_C
5 V
150_C
4 V
3 V
4
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.0
0.8
0.6
0.4
0.2
0
1400
1200
1000
800
600
400
200
0
C
iss
V
GS
= 4.5 V
C
oss
V
GS
= 10 V
C
rss
0
4
8
12
16
20
0
10
20
30
40
50
60
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
2.0
1.6
1.2
0.8
0.4
0
V
= 30 V
= 3.1 A
V
GS
= 10 V
DS
I
D
I = 3.1 A
D
6
4
2
0
0
4
8
12
16
20
–50 –25
0
25
50
75 100 125 150 175
Q
g
– Total Gate Charge (nC)
T – Junction Temperature (_C)
J
Document Number: 70166
S-99444—Rev. E, 29-Nov-99
www.vishay.com S FaxBack 408-970-5600
2-3
Si4948EY
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.5
0.4
0.3
0.2
0.1
0
20
10
T = 175_C
J
I
D
= 3.1 A
T = 25_C
J
1
2
4
6
8
10
0.00
0.25
0.50
0.75
1.00
1.25
1.50
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Single Pulse Power
Threshold Voltage
50
0.75
T
= 25_C
C
Single Pulse
40
30
20
10
0.50
0.25
I
D
= 250 mA
0.00
–0.25
0
–50 –25
0
25
50
75 100 125 150 175
0.01
0.1
1
10
30
Time (sec)
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
P
DM
0.1
0.1
t
1
0.05
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 62.5_C/W
thJA
0.02
(t)
3. T – T = P
Z
JM
A
DM thJA
4. Surface Mounted
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
1
10
30
Square Wave Pulse Duration (sec)
Document Number: 70166
S-99444—Rev. E, 29-Nov-99
www.vishay.com S FaxBack 408-970-5600
2-4
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