SI4948BEY-T1-GE3 [VISHAY]
Small Signal Field-Effect Transistor, 2.4A I(D), 60V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8;
| 型号： | SI4948BEY-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Field-Effect Transistor, 2.4A I(D), 60V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：167K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4948BEY
Vishay Siliconix
Dual P-Channel 60-V (D-S) 175° MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
ID (A)
- 3.1
- 2.8
Definition
0.120 at VGS = - 10 V
0.150 at VGS = - 4.5 V
TrenchFET® Power MOSFET
Compliant to RoHS Directive 2002/95/EC
- 60
•
•
S
1
S
2
SO-8
S
G
S
D
1
D
1
D
2
D
2
1
2
3
4
8
7
6
5
1
1
2
2
G
G
2
1
G
Top View
D
1
D
2
Ordering Information:
Si4948BEY-T1-E3 (Lead (Pb)-free)
Si4948BEY-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
10 s
Steady State
- 60
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
20
TA = 25 °C
TA = 70 °C
- 3.1
- 2.6
- 2.4
- 2.0
Continuous Drain Current (TJ = 150 °C)a
ID
IDM
IS
Pulsed Drain Current (10 µs Pulse Width)
- 25
A
Continuous Source Current (Diode Conduction)a
Avalanche Current
- 2
- 1.1
IAS
EAS
15
11
L = 0.1 mH
Single Pulse Avalanche Energy
mJ
W
TA = 25 °C
TA = 70 °C
2.4
1.7
1.4
Maximum Power Dissipationa
PD
0.95
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
53
Maximum
62.5
Unit
t ≤ 10 s
Maximum Junction-to-Ambienta
RthJA
Steady State
Steady State
85
110
°C/W
RthJF
Maximum Junction-to-Foot
30
37
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72847
S09-1002-Rev. B, 01-Jun-09
www.vishay.com
1
Si4948BEY
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VGS(th)
IGSS
VDS = VGS, ID = - 250 µA
Gate Threshold Voltage
- 1
- 3
100
- 1
V
VDS = 0 V, VGS
=
20 V
Gate-Body Leakage
nA
VDS = - 60 V, VGS = 0 V
DS = - 60 V, VGS = 0 V, TJ = 70 °C
VDS = - 5 V, VGS = - 10 V
IDSS
ID(on)
Zero Gate Voltage Drain Current
µA
A
V
- 10
On-State Drain Currenta
- 25
VGS = - 10 V, ID = - 3.1 A
0.100
0.126
8.5
0.120
0.150
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
RDS(on)
Ω
V
GS = - 4.5 V, ID = - 0.2 A
gfs
VDS = - 15 V, ID = - 3.1 A
IS = - 2 A, VGS = 0 V
S
V
VSD
- 0.8
- 1.2
22
Qg
Qgs
Qgd
Rg
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
14.5
2.2
3.7
14
V
DS = - 30 V, VGS = - 10 V, ID = - 3.1 A
f = 1 MHz
nC
Ω
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
10
15
22
75
55
50
15
V
DD = - 30 V, RL = 30 Ω
ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω
Turn-Off Delay Time
Fall Time
50
ns
35
trr
IF = - 2 A, dI/dt = 100 A/µs
Source-Drain Reverse Recovery Time
30
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
25
20
15
10
5
25
20
15
10
5
V
GS
= 10 V thru 5 V
4 V
3 V
T
= 125 °C
C
25 °C
2
- 55 °C
0
0
0
1
2
3
4
5
6
7
8
0
1
3
4
5
6
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
www.vishay.com
2
Document Number: 72847
S09-1002-Rev. B, 01-Jun-09
Si4948BEY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.40
0.35
0.30
0.25
0.20
1000
800
600
400
200
0
C
iss
V
GS
= 4.5 V
0.15
0.10
0.05
0.00
V
GS
= 10 V
C
oss
C
rss
0
5
10
15
20
25
0
10
20
30
40
50
60
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
10
8
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 10 V
V
I
= 30 V
GS
= 3.1 A
DS
I
= 3.1 A
D
6
4
2
0
- 50 - 25
0
25
50
75 100 125 150 175
0
3
6
9
12
15
Q
- Total Gate Charge (nC)
T - Junction Temperature (°C)
J
g
Gate Charge
On-Resistance vs. Junction Temperature
20
10
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
T
= 150 °C
J
I
D
= 3.1 A
T
= 25 °C
1.0
J
1
0.0
0.2
0.4
0.6
0.8
1.2
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72847
S09-1002-Rev. B, 01-Jun-09
www.vishay.com
3
Si4948BEY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.6
50
40
0.4
I
D
= 250 µA
0.2
0.0
30
20
10
- 0.2
- 0.4
0
-3
-2
10
-1
10
- 50 - 25
0
25
50
75
100 125 150
10
1
10
100
600
T
- Temperature (°C)
Time (s)
J
Single Pulse Power
Threshold Voltage
100
I
Limited
DM
Limited
by R
10
1
P(t) = 0.0001
DS(on)*
P(t) = 0.001
I
P(t) = 0.01
P(t) = 0.1
D(on)
Limited
0.1
T
A
= 25 °C
Single Pulse
P(t) = 1
P(t) = 10
DC
BVDSS Limited
10
0.01
0.1
1
100
V
DS
- Drain-to-Source Voltage (V)
* V > minimum V at which R is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 85 °C/W
thJA
(t)
3. TJM - T = P
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
10
-3
10
-2
10
-1
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
www.vishay.com
4
Document Number: 72847
S09-1002-Rev. B, 01-Jun-09
Si4948BEY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
10
-1
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72847.
Document Number: 72847
S09-1002-Rev. B, 01-Jun-09
www.vishay.com
5
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (Gage Plane)
A
All Leads
0.101 mm
q
e
B
A
1
L
0.004"
MILLIMETERS
Max
INCHES
DIM
A
Min
Min
Max
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
A1
B
C
D
E
e
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
www.vishay.com
1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
(0.711)
0.022
0.050
(0.559)
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
www.vishay.com
22
Document Number: 72606
Revision: 21-Jan-08
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
相关型号：
SI4948EY-T1-E3
Power Field-Effect Transistor, 60V, 0.12ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8
VISHAY
SI4949EY
Power Field-Effect Transistor, 4.5A I(D), 60V, 0.055ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
VISHAY
SI4952DY-T1-E3
Power Field-Effect Transistor, 8A I(D), 25V, 0.023ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8
VISHAY
SI4953ADY-E3
Small Signal Field-Effect Transistor, 3.7A I(D), 30V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
VISHAY
SI4953ADY-T1
Small Signal Field-Effect Transistor, 3.7A I(D), 30V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
VISHAY
SI4953ADY-T1-GE3
TRANSISTOR 3700 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal
VISHAY
©2020 ICPDF网 联系我们和版权申明