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SI4947DY-T1-E3 [VISHAY]

Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET;
SI4947DY-T1-E3
型号： SI4947DY-T1-E3
厂家： VISHAY    VISHAY
描述：

Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

光电二极管 晶体管
文件： 总5页 (文件大小：73K)
中文：  中文翻译
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Si4947DY  
Dual P-Channel 30-V (D-S) Rated MOSFET  
Product Summary  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.085 @ V = –10 V  
"3.5  
"2.5  
GS  
–30  
0.19 @ V = –4.5 V  
GS  
S
1
S
2
SO-8  
S
G
S
D
D
D
D
1
2
3
4
8
7
6
5
1
1
2
2
1
1
2
2
G
G
2
1
G
Top View  
D
D
2
1
P-Channel MOSFET  
P-Channel MOSFET  
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)  
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
–30  
DS  
GS  
V
"20  
T
= 25_C  
= 70_C  
"3.5  
"2.8  
"20  
A
a
Continuous Drain Current (T = 150_C)  
I
J
D
T
A
A
Pulsed Drain Current  
I
DM  
a
Continuous Source Current (Diode Conduction)  
I
S
–1.7  
T
= 25_C  
= 70_C  
2.0  
A
a
Maximum Power Dissipation  
P
W
D
T
A
1.3  
Operating Junction and Storage Temperature Range  
T , T  
J
–55 to 150  
_C  
stg  
Thermal Resistance Ratings  
Parameter  
Symbol  
Limit  
Unit  
a
Maximum Junction-to-Ambient  
R
thJA  
62.5  
_C/W  
Notes  
a. Surface Mounted on FR4 Board, t v 10 sec.  
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70156.  
A SPICE Model data sheet is available for this product (FaxBack document #70554).  
Siliconix  
1
S-49520—Rev. C, 18-Dec-96  
Si4947DY  
Specifications (TJ = 25_C Unless Otherwise Noted)  
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= V , I = –250 mA  
1.0  
V
GS(th)  
DS  
GS  
D
V
= 0 V, V = "20 V  
GS  
I
DS  
"100  
nA  
GSS  
V
= –30 V, V = 0 V  
–1  
DS  
GS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
= –30 V, V = 0 V, T = 55_C  
–25  
DS  
GS  
J
b
On-State Drain Current  
I
V
w –5 V, V = –10 V  
–15  
A
D(on)  
DS  
GS  
V
= –10 V, I = 2.5 A  
0.066  
0.125  
5.0  
0.085  
0.19  
GS  
GS  
DS  
D
b
Drain-Source On-State Resistance  
r
W
DS(on)  
V
= –4.5 V, I = 1.8 A  
D
b
Forward Transconductance  
g
V
= –15 V, I = –2.5 A  
S
fs  
D
b
Diode Forward Voltage  
V
I = –1.7 A, V = 0 V  
–0.8  
–1.2  
15  
V
SD  
S
GS  
Dynamica  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Turn-On Delay Time  
Rise Time  
Q
8.7  
1.9  
1.3  
7
g
Q
V
= –10 V, V = –10 V, I = –2.5 A  
nC  
ns  
gs  
gd  
DS  
GS  
D
Q
t
15  
18  
27  
15  
80  
d(on)  
t
9
r
V
= –10 V, R = 10 W  
L
= –10 V, R = 6 W  
GEN G  
DD  
I
^ –1 A, V  
D
Turn-Off Delay Time  
Fall Time  
t
14  
8
d(off)  
t
f
Source-Drain Reverse Recovery Time  
t
I = –1.7 A, di/dt = 100 A/ms  
50  
rr  
F
Notes  
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
2
Siliconix  
S-49520—Rev. C, 18-Dec-96  
Si4947DY  
Typical Characteristics (25_C Unless Otherwise Noted)  
Output Characteristics  
Transfer Characteristics  
20  
16  
12  
8
20  
16  
12  
8
V
= 10, 9, 8, 7, 6 V  
T
C
= –55_C  
GS  
25_C  
125_C  
5 V  
4 V  
4
4
3 V  
0
0
0
2
4
6
8
0
2
4
6
8
V
– Drain-to-Source Voltage (V)  
V
– Gate-to-Source Voltage (V)  
GS  
DS  
On-Resistance vs. Drain Current  
Capacitance  
0.40  
0.32  
0.24  
0.16  
0.08  
0
700  
600  
500  
400  
300  
200  
100  
0
C
iss  
V
= 4.5 V  
GS  
C
oss  
V
= 10 V  
GS  
C
rss  
0
3
6
9
12  
15  
0
6
12  
18  
24  
30  
I
D
– Drain Current (A)  
V
DS  
– Drain-to-Source Voltage (V)  
Gate Charge  
On-Resistance vs. Junction Temperature  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
V
= 10 V  
= 2.5 A  
V
= 10 V  
GS  
DS  
I
I = 2.5 A  
D
D
6
4
2
0
0
2
4
6
8
10  
–50 –25  
0
25  
50  
75 100 125 150  
Q
– Total Gate Charge (nC)  
T – Junction Temperature (_C)  
J
g
Siliconix  
S-49520—Rev. C, 18-Dec-96  
3
Si4947DY  
Typical Characteristics (25_C Unless Otherwise Noted)  
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.5  
0.4  
0.3  
0.2  
0.1  
0
20  
10  
I
= 2.5 A  
D
T = 150_C  
T = 25_C  
J
J
1
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
0
2
4
6
8
10  
V
– Source-to-Drain Voltage (V)  
V
– Gate-to-Source Voltage (V)  
GS  
SD  
Single Pulse Power  
Threshold Voltage  
0.8  
0.6  
30  
25  
I
D
= 250 mA  
0.4  
20  
15  
10  
0.2  
0.0  
–0.2  
–0.4  
5
0
–50 –25  
0
25  
50  
75 100 125 150  
0.01  
0.1  
1
10  
30  
Time (sec)  
T – Temperature (_C)  
J
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
Notes:  
0.1  
P
DM  
0.1  
0.05  
t
1
t
2
t
t
1
1. Duty Cycle, D =  
2. Per Unit Base = R  
2
0.02  
= 62.5_C/W  
thJA  
(t)  
3. T – T = P Z  
DM thJA  
JM  
A
Single Pulse  
4. Surface Mounted  
0.01  
–4  
–3  
–2  
–1  
10  
10  
10  
10  
1
10  
30  
Square Wave Pulse Duration (sec)  
4
Siliconix  
S-49520—Rev. C, 18-Dec-96  
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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