MAGX-001090-600L0S [TE]

GaN on SiC HEMT Pulsed Power Transistor;


型号：	MAGX-001090-600L0S
厂家：	TE CONNECTIVITY
描述：	GaN on SiC HEMT Pulsed Power Transistor
文件：	总9页 (文件大小：944K)
中文：	中文翻译
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MAGX-001090-600L0x

GaN on SiC HEMT Pulsed Power Transistor

600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty

Rev. V6

MAGX-001090-600L00

Features



GaN on SiC Depletion-Mode Transistor Technology

Internally Matched

Common-Source Configuration

Broadband Class AB Operation

RoHS* Compliant and 260 °C Reflow Compatible

+50 V Typical Operation

MTTF = 600 years (T_J< 200 °C)

Applications

 Civilian Air Traffic Control (ATC), L-Band

Secondary Radar for IFF and Mode-S avionics.

MAGX-001090-600L0S

 Military Radar for IFF and Data Links.

Description

The MAGX-001090-600L00 and MAGX-001090-600L0S

are gold metalized matched Gallium Nitride (GaN)

on Silicon Carbide (SiC) RF power transistor

optimized for pulsed avionics and radar applications.

Using state of the art wafer fabrication processes,

these high performance transistors provide high

gain, efficiency, bandwidth, and ruggedness over a

wide bandwidth for today’s demanding application

needs. High breakdown voltages allow for reliable

and stable operation under more extreme mismatch

load conditions compared with older semiconductor

technologies.

Ordering Information¹

Part Number

Description

Flanged

MAGX-001090-600L00

MAGX-001090-600L0S

Flangeless

1030 - 1090 MHz

Evaluation Board

MAGX-A11090-600L00

1. When ordering the evaluation board, please indicate on sales

order notes if it will be used for:

A. Standard Flange devices

B. Earless Flange devices

Typical RF Performance under Standard Operating Conditions, P_OUT= 600 W (Peak)

VSWR-S

(3:1)

VSWR-T

(5:1)

Freq

(MHz)

P_IN

(W)

Gain

(dB)

I_D

(A)

Eff.

(%)

(dB)

Droop

(dB)

+1dB OD

(W)

1030

1090

4.95

4.50

20.8

21.3

20.4

18.6

58.6

64.4

-16.8

-11.0

0.24

0.23

649

661

* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

MAGX-001090-600L0x

GaN on SiC HEMT Pulsed Power Transistor

600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty

Rev. V6

Electrical Specifications: Freq. = 1030 - 1090 MHz, T_A= 25 °C

Parameter

RF Functional Tests

Peak Input Power

Power Gain

Test Conditions

Symbol

Min.

Typ.

Max.

Units

P_IN

G_P

4.3

21.4

6.7

19.5

V_DD= 50 V, I_DQ= 600 mA,

Pulse Width = 32 μs, Duty Cycle = 2%,

P_OUT= 600 W Peak (12 W avg.)

Drain Efficiency

η_D

0.3

Pulse Droop

Droop

VSWR-S

VSWR-T

0.2

3:1

5:1

Load Mismatch Stability

Load Mismatch Tolerance

Mode-S ELM Pulse Width Conditions²

V_DD= 50 V, I_DQ= 400 mA,

48 pulses of 32 µs on and 18 µs off,

repeat every 24 ms,

Overall Duty Factor = 6.4%,

P_OUT= 550 W Peak (35.2 W avg.)

Peak Input Power

Power Gain

P_IN

G_P

η_D

4.6

20.7

Drain Efficiency

2. For Mode-S ELM pulse conditions power measurements are obtained as follows:

RF input / output power is measured at the middle of the 25th pulse in the burst (t = 1.216 ms);

Droop measurements are defined as the drop in power from the 5th pulse (t = 216us) and 43rd pulse (t = 2.116ms) in the burst.

Electrical Characteristics: T_A= 25 °C

Parameter

Test Conditions

Symbol

Min.

Typ.

Max.

Units

DC Characteristics

Drain-Source Leakage Current

Gate Threshold Voltage

Forward Transconductance

Dynamic Characteristics

Input Capacitance

V_GS= -8 V, V_DS= 175 V

V_DS= 5 V, I_D= 75 mA

V_DS= 5 V, I_D= 17.5 mA

I_DS

V_{GS (TH)}

G_M

1.0

-3.1

19.2

-2

-5

12.5

Not applicable - Input matched

C_ISS

C_OSS

C_RSS

N/A

Output Capacitance

V_DS= 50 V, V_GS= -8 V,

Freq. = 1 MHz

Reverse Transfer Capacitance

5.5

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

MAGX-001090-600L0x

GaN on SiC HEMT Pulsed Power Transistor

600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty

Rev. V6

Absolute Maximum Ratings^3,4,5

Parameter

Limit

+65 V

Drain Voltage (V_DD

Gate Voltage (V_GG

Drain Current (I_DD

)

-8 to -2 V

80 A

)

Input Power⁶(P_IN)

Operating Junction Temperature⁷

P_IN(nominal) + 3 dB

250 ºC

Peak Pulsed Power Dissipation at 85 ºC

Operating Temperature Range

3.5 kW

-40 to +95 ºC

-65 to +150 ºC

1300 V

Storage Temperature Range

ESD Maximum - Charged Device Model (CDM)

ESD Maximum - Human Body Model (HBM)

4000 V

3. Exceeding any one or combination of these limits may cause permanent damage to this device.

4. MACOM does not recommend sustained operation near these survivability limits.

5. For saturated performance it is recommended that the sum of ( 3 * V_DD+ | V_GG| ) < 175 V.

6. Input Power Limit is +3 dB over nominal drive required to achieve P_OUT= 600 W.

7. Operating junction temperature is measured with infrared (IR) microscope. Junction temperature directly affects a device's MTTF and

should be kept as low as possible to maximize lifetime.



MTTF = 5.3 x 10⁶hours (T_J< 200 °C)

MTTF = 6.8 x 10⁴hours (T_J< 250 °C)

Thermal Characteristics

Parameter

Test Conditions

Symbol

Typical

Units

T_C= 70 ºC, V_DD= 50 V, I_DQ= 600 mA, P_OUT= 600 W,

Thermal Resistance

Θ_JC

0.05

°C/W

Pulse Width = 32 µs, Duty Cycle = 2%

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

MAGX-001090-600L0x

GaN on SiC HEMT Pulsed Power Transistor

600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty

Rev. V6

Test Fixture Assembly

Contact MACOM for additional circuit information.

Correct Device Sequencing

Test Fixture Impedances

Freq. (MHz)

1030

Z_IF(Ω)

Z_OF(Ω)

1.5 + j0.5

1.5 + j0.6

Turning the device ON

1.1 - j1.5

1.1 - j1.4

1.1 - j1.3

1. Set V_GSto the pinch-off (V_P), typically -5 V.

2. Turn on V_DSto nominal voltage (50 V).

3. Increase V_GSuntil the I_DScurrent is reached.

4. Apply RF power to desired level.

1060

1090

Turning the device OFF

Zif

1. Turn the RF power off.

2. Decrease V_GSdown to V_P.

3. Decrease V_DSdown to 0 V.

4. Turn off V_GS

INPUT

NETWORK

OUTPUT

NETWORK

Zof

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

MAGX-001090-600L0x

GaN on SiC HEMT Pulsed Power Transistor

600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty

Rev. V6

RF Power Transfer Curve (Output Power Vs. Input Power)

RF Power Transfer Curve (Drain Efficiency Vs. Output Power)

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

MAGX-001090-600L0x

GaN on SiC HEMT Pulsed Power Transistor

600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty

Rev. V6

Typical RF Data with Mode-S ELM ‘pulse’ conditions:

48 pulses of 32 µs on and 18 µs off, repeat every 24ms; Overall Duty Factor = 6.4%

V_DD= 50 V; I_DQ= 400 mA

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

MAGX-001090-600L0x

GaN on SiC HEMT Pulsed Power Transistor

600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty

Rev. V6

Outline Drawing MAGX-001090-600L00^†

† Reference Application Note AN3025 for mounting/soldering recommendations.

Meets JEDEC moisture sensitivity level 1 requirements.

Plating is Ni/Au.

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

MAGX-001090-600L0x

GaN on SiC HEMT Pulsed Power Transistor

600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty

Rev. V6

Outline Drawing MAGX-001090-600L0S^†

† Reference Application Note AN3025 for mounting/soldering recommendations.

Meets JEDEC moisture sensitivity level 1 requirements.

Plating is Ni/Au.

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

MAGX-001090-600L0x

GaN on SiC HEMT Pulsed Power Transistor

600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty

Rev. V6

Information in this document is provided in connection with M/A-COM Technology Solutions Inc ("MACOM")

products. These materials are provided by MACOM as a service to its customers and may be used for

informational purposes only. Except as provided in MACOM's Terms and Conditions of Sale for such products or

in any separate agreement related to this document, MACOM assumes no liability whatsoever. MACOM

assumes no responsibility for errors or omissions in these materials. MACOM may make changes to

specifications and product descriptions at any time, without notice. MACOM makes no commitment to update

the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future

changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherwise,

to any intellectual property rights is granted by this document.

THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR

IMPLIED, RELATING TO SALE AND/OR USE OF MACOM PRODUCTS INCLUDING LIABILITY OR

WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, CONSEQUENTIAL OR

INCIDENTAL DAMAGES, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR

OTHER INTELLECTUAL PROPERTY RIGHT. MACOM FURTHER DOES NOT WARRANT THE ACCURACY

OR COMPLETENESS OF THE INFORMATION, TEXT, GRAPHICS OR OTHER ITEMS CONTAINED WITHIN

THESE MATERIALS. MACOM SHALL NOT BE LIABLE FOR ANY SPECIAL, INDIRECT, INCIDENTAL, OR

CONSEQUENTIAL DAMAGES, INCLUDING WITHOUT LIMITATION, LOST REVENUES OR LOST PROFITS,

WHICH MAY RESULT FROM THE USE OF THESE MATERIALS.

MACOM products are not intended for use in medical, lifesaving or life sustaining applications. MACOM

customers using or selling MACOM products for use in such applications do so at their own risk and agree to

fully indemnify MACOM for any damages resulting from such improper use or sale.

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

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