MAGX-001090-SB0PPR [TE]
GaN on SiC HEMT Pulsed Power Transistor Common-Source Configuration; 氮化镓HEMT的SiC脉冲功率晶体管共源配置
| 型号： | MAGX-001090-SB0PPR |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | GaN on SiC HEMT Pulsed Power Transistor Common-Source Configuration |
| 文件： | 总7页 (文件大小：971K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MAGX-001090-600L00
GaN on SiC HEMT Pulsed Power Transistor
600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty
Rev. V1
Features
GaN on SiC Depletion-Mode Transistor
Technology
Internally Matched
Common-Source Configuration
Broadband Class AB Operation
RoHS* Compliant and 260°C Reflow Compatible
+50 V Typical Operation
MTTF = 600 years (TJ < 200°C)
Applications
Ordering Information
Civilian Air Traffic Control (ATC), L-Band
secondary radar for IFF and Mode-S avionics.
Part Number
Description
Military radar for IFF and Data Links.
600 W GaN Power
Transistor (Production)
MAGX-001090-600L00
MAGX-001090-SB0PPR
Description
1.03 - 1.09 GHz
Evaluation Board
The MAGX-001090-600L00 is a gold metalized
matched Gallium Nitride (GaN) on Silicon
Carbide (SiC) RF power transistor optimized for
pulsed avionics and radar applications. Using state
of the art wafer fabrication processes, these high
performance transistors provide high gain,
efficiency, bandwidth, and ruggedness over a wide
bandwidth for today’s demanding application needs.
High breakdown voltages allow for reliable and
stable operation under more extreme
mismatch
load conditions compared with older semiconductor
technologies.
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-001090-600L00
GaN on SiC HEMT Pulsed Power Transistor
600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty
Rev. V1
Typical RF Performance under standard operating conditions, POUT = 600 W (Peak)
VSWR-S
(3:1)
VSWR-T
(5:1)
Freq
(MHz)
PIN
(W)
Gain
(dB)
ID
(A)
Eff.
(%)
RL
(dB)
Droop
(dB)
+1dB OD
(W)
1030
1090
4.95
4.50
20.8
21.3
20.4
18.6
58.6
64.4
-16.8
-11.0
0.24
0.23
649
661
S
S
P
P
Electrical Specifications: Freq. = 1030 - 1090 MHz, TA = 25°C
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Units
RF Functional Tests:
Standard Pulse Conditions: VDD = 50 V, IDQ = 600 mA; Pulse = 32 µs / 2%
Input Power
Power Gain
POUT = 600 W Peak (12 W avg.)
POUT = 600 W Peak (12 W avg.)
POUT = 600 W Peak (12 W avg.)
POUT = 600 W Peak (12 W avg.)
POUT = 600 W Peak (12 W avg.)
POUT = 600 W Peak (12 W avg.)
PIN
GP
-
4.3
21.4
63
6.7
Wpk
dB
%
19.5
-
Drain Efficiency
ηD
55
-
-
0.3
-
Pulse Droop
Droop
VSWR-S
VSWR-T
0.2
3:1
5:1
dB
-
Load Mismatch Stability
-
Load Mismatch Tolerance
-
-
-
Mode-S ELM Pulse Width Conditions1: VDD = 50 V, IDQ = 400 mA;
48 pulses of 32 µs on and 18 µs off, repeat every 24 ms; Overall Duty Factor = 6.4%
Input Power
Power Gain
POUT = 550 W Peak (35.2 W avg.)
POUT = 550 W Peak (35.2 W avg.)
POUT = 550 W Peak (35.2 W avg.)
PIN
GP
ηD
-
-
-
4.6
20.7
61
-
-
-
Wpk
dB
Drain Efficiency
%
1. For Mode-S ELM pulse conditions, RF power is measured at the middle of the 25th pulse in the burst (t ~ 1.216 ms)
Electrical Characteristics: TA = 25°C
Parameter
DC Characteristics:
Test Conditions
Symbol
Min.
Typ.
Max.
Units
Drain-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
VGS = -8 V, VDS = 175 V
VDS = 5 V, ID = 75 mA
VDS = 5 V, ID = 17.5 mA
IDS
VGS (TH)
GM
-
1.0
-3.1
19.2
30
-2
-
mA
V
-5
12.5
S
Dynamic Characteristics:
Input Capacitance
Not applicable - Input matched
VDS = 50 V, VGS = -8 V, F = 1 MHz
VDS = 50 V, VGS = -8 V, F = 1 MHz
CISS
COSS
CRSS
N/A
N/A
55
N/A
pF
pF
pF
Output Capacitance
-
-
-
-
Reverse Transfer Capacitance
5.5
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-001090-600L00
GaN on SiC HEMT Pulsed Power Transistor
600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty
Rev. V1
Absolute Maximum Ratings2,3,4,5
Parameter
Limit
+65 V
Supply Voltage (VDD
)
)
Supply Voltage (VGS
-8 to -2 V
82 A
Supply Current (IDMAX
)
Input Power (PIN)
PIN (nominal) + 3 dB
200ºC
Absolute Max. Junction/Channel Temp
Pulsed Power Dissipation at 85 ºC
2.3 kW
Thermal Resistance, (TJ= 70 ºC)
VDD = 50 V, IDQ = 600 mA, Pout = 600 W, 32 µs Pulse / 2% Duty
0.05 ºC/W
Operating Temp
Storage Temp
-40 to +95ºC
-65 to +150ºC
See solder reflow profile
1300 V
Mounting Temperature
ESD Min. - Charged Device Model (CDM)
ESD Min. - Human Body Model (HBM)
4000 V
2. Operation of this device above any one of these parameters may cause permanent damage.
3. Input Power Limit is +3 dB over nominal drive required to achieve POUT = 600 W.
4. Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime.
5. For saturated performance it recommended that the sum of (3*VDD + abs(VGG)) <175 V.
Correct Device Sequencing
Test Fixture Impedances
F (MHz)
ZIF (Ω)
ZOF (Ω)
1.5 + j0.5
1.5 + j0.6
1.5 + j0.6
Turning the device ON
1030
1.1 - j1.5
1.1 - j1.4
1.1 - j1.3
1. Set VGS to the pinch-off (VP), typically -5 V.
2. Turn on VDS to nominal voltage (50 V).
3. Increase VGS until the IDS current is reached.
4. Apply RF power to desired level.
1060
1090
Turning the device OFF
Zif
1. Turn the RF power off.
2. Decrease VGS down to VP.
3. Decrease VDS down to 0 V.
4. Turn off VGS
INPUT
NETWORK
OUTPUT
NETWORK
Zof
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-001090-600L00
GaN on SiC HEMT Pulsed Power Transistor
600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty
Rev. V1
Test Fixture Circuit Dimensions
Test Fixture Assembly
Contact factory for gerber file or additional circuit information.
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-001090-600L00
GaN on SiC HEMT Pulsed Power Transistor
600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty
Rev. V1
RF Power Transfer Curve (Output Power Vs. Input Power)
RF Power Transfer Curve (Drain Efficiency Vs. Output Power)
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-001090-600L00
GaN on SiC HEMT Pulsed Power Transistor
600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty
Rev. V1
Typical RF Data with Mode-S ELM ‘pulse’ conditions:
48 pulses of 32 µs on and 18 µs off, repeat every 24ms; Overall Duty Factor = 6.4%
VDD = 50 V; IDQ = 400 mA
6
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-001090-600L00
GaN on SiC HEMT Pulsed Power Transistor
600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty
Rev. V1
Outline Drawing
7
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
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