MAGX-001214-650L00 [TE]
Common-Source Configuration;
| 型号： | MAGX-001214-650L00 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | Common-Source Configuration |
| 文件： | 总7页 (文件大小：823K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MAGX-001214-650L0x
GaN on SiC HEMT Pulsed Power Transistor
650 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty
Rev. V3
Features
MAGX-001214-650L00
GaN on SiC Depletion-Mode Transistor
Technology
Internally Matched
Common-Source Configuration
Broadband Class AB Operation
RoHS* Compliant and 260°C Reflow Compatible
+50 V Typical Operation
MTTF = 600 Years (TJ < 200 °C)
Applications
L-Band pulsed radar.
Description
The MAGX-001214-650L0x is a gold-metalized
matched Gallium Nitride (GaN) on Silicon Carbide
(SiC) RF power transistor optimized for pulsed
L-Band radar applications. Using state of the art
wafer fabrication processes, these high performance
transistors provide high gain, efficiency, bandwidth,
and ruggedness over a wide bandwidth for today’s
demanding application needs. High breakdown
voltages allow for reliable and stable operation
under more extreme mismatch load conditions
compared with older semiconductor technologies.
Ordering Information
Part Number
Description
MAGX-001214-650L00
GaN Transistor
1200-1400 MHz
Evaluation Board
MAGX-L21214-650L00
Typical RF Performance Under Standard Operating Conditions, POUT = 650 W (Peak)
VSWR-S
(3:1)
Freq.
(MHz)
PIN
(W)
Gain
(dB)
ID
(A)
Eff.
(%)
RL
(dB)
Droop
(dB)
+1dB OD
(W)
1200
1250
1300
1350
1400
8.7
8.5
8.0
7.0
7.0
18.8
18.9
19.1
19.7
19.7
21.3
22.0
22.4
21.8
21.1
61.0
58.9
57.8
59.7
61.4
-13.9
-13.8
-13.5
-15.8
-15.0
0.2
0.3
0.3
0.3
0.2
717
726
724
723
697
S
S
S
S
S
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAGX-001214-650L0x
GaN on SiC HEMT Pulsed Power Transistor
650 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty
Rev. V3
Electrical Specifications: Freq. = 1200 - 1400 MHz, TA = 25°C
Parameter
RF Functional Tests
Peak Input Power
Power Gain
Test Conditions
Symbol
Min.
Typ.
Max.
Units
PIN
GP
-
18
55
-
7.5
19.5
60
10.3
W
dB
%
dB
-
-
VDD = 50 V, IDQ = 500 mA
Pulse Width = 300 µs,
Duty Cycle = 10%
POUT = 650 W Peak (65 W avg.)
Drain Efficiency
ηD
-
0.6
-
Pulse Droop
Droop
VSWR-S
VSWR-T
0.3
2:1
3:1
Load Mismatch Stability
Load Mismatch Tolerance
-
-
-
-
Electrical Characteristics: TA = 25°C
Parameter
DC Characteristics
Test Conditions
Symbol
Min.
Typ.
Max.
Units
Drain-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
VGS = -8 V, VDS = 175 V
VDS = 5 V, ID = 90 mA
VDS = 5 V, ID = 21 mA
IDS
VGS (TH)
GM
-
1.7
-2.9
21.7
33
-2
-
mA
V
-5
16.2
S
Dynamic Characteristics
Input Capacitance
Output Capacitance
Not applicable - Input matched
CISS
COSS
CRSS
N/A
N/A
55
N/A
pF
pF
pF
-
-
-
-
VDS = 50 V, VGS = -8 V,
Freq. = 1 MHz
Reverse Transfer Capacitance
5.5
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAGX-001214-650L0x
GaN on SiC HEMT Pulsed Power Transistor
650 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty
Rev. V3
Absolute Maximum Ratings1,2,3
Parameter
Limit
+65 V
Drain Voltage (VDD
Gate Voltage (VGG
Drain Current (IDD
)
)
-8 to 0 V
)
27 A
Input Power4 (PIN)
PIN (nominal) + 3 dB
250ºC
Operating Junction Temperature5
Peak Pulsed Power Dissipation at 85ºC
Operating Temperature Range
700 W
-40 to +85ºC
-65 to +150ºC
1300 V
Storage Temperature Range
ESD Min. - Charged Device Model (CDM)
ESD Min. - Human Body Model (HBM)
4000 V
1. Exceeding any one or combination of these limits may cause permanent damage to this device.
2. MACOM does not recommend sustained operation near these survivability limits.
3. For saturated performance it is recommended that the sum of ( 3 * VDD + | VGG | ) < 175 V.
4. Input Power Limit is +3 dB over nominal drive required to achieve POUT = 650 W.
5. Operating junction temperature is measured with infrared (IR) microscope. Junction temperature directly affects a device's MTTF and
should be kept as low as possible to maximize lifetime.
MTTF = 5.3 x 106 hours (TJ < 200°C)
MTTF = 6.8 x 104 hours (TJ < 250°C)
Thermal Characteristics
Parameter
Test Conditions
Symbol Typical
ΘJC 0.25
Units
TC = 70ºC, VDD = 50 V, IDQ = 500 mA, POUT = 650 W
Thermal Resistance
°C/W
Pulse Width = 300 µs, Duty Cycle = 10%
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAGX-001214-650L0x
GaN on SiC HEMT Pulsed Power Transistor
650 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty
Rev. V3
Test Fixture Assembly
Contact factory for gerber file or additional circuit information.
Correct Device Sequencing
Test Fixture Impedances
F (MHz)
ZIF (Ω)
ZOF (Ω)
Turning the device ON
1. Set VGS to the pinch-off (VP), typically -5 V.
2. Turn on VDS to nominal voltage (50 V).
3. Increase VGS until the IDS current is reached.
4. Apply RF power to desired level.
1200
1250
1300
1350
1400
0.8 - j0.9
0.8 - j0.7
0.7 - j0.6
0.7 - j0.4
0.7 - j0.2
1.4 + j0.2
1.4 + j0.2
1.4 + j0.1
1.2 + j0.1
1.1 + j0.2
Turning the device OFF
1. Turn the RF power off.
2. Decrease VGS down to VP.
3. Decrease VDS down to 0 V.
4. Turn off VGS.
Zif
INPUT
OUTPUT
NETWORK
NETWORK
Zof
Contact factory for gerber file or additional circuit information.
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAGX-001214-650L0x
GaN on SiC HEMT Pulsed Power Transistor
650 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty
Rev. V3
RF Power Transfer Curve (Output Power vs. Input Power)
850
750
650
550
450
350
250
150
50
1.20 GHz
1.30 GHz
1.40 GHz
1.0
3.0
5.0
7.0
9.0
11.0
13.0
15.0
Input Power (W)
RF Power Transfer Curve (Drain Efficiency vs. Output Power)
70
60
50
40
1.20 GHz
1.30 GHz
1.40 GHz
30
20
50
150
250
350
450
550
650
750
850
Output Power (W)
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAGX-001214-650L0x
GaN on SiC HEMT Pulsed Power Transistor
650 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty
Rev. V3
Outline Drawing MAGX-001214-650L00
6
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAGX-001214-650L0x
GaN on SiC HEMT Pulsed Power Transistor
650 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty
Rev. V3
M/A-COM Technology Solutions Inc. All rights reserved.
Information in this document is provided in connection with M/A-COM Technology Solutions Inc ("MACOM")
products. These materials are provided by MACOM as a service to its customers and may be used for
informational purposes only. Except as provided in MACOM's Terms and Conditions of Sale for such products or
in any separate agreement related to this document, MACOM assumes no liability whatsoever. MACOM
assumes no responsibility for errors or omissions in these materials. MACOM may make changes to
specifications and product descriptions at any time, without notice. MACOM makes no commitment to update
the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future
changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherwise,
to any intellectual property rights is granted by this document.
THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR
IMPLIED, RELATING TO SALE AND/OR USE OF MACOM PRODUCTS INCLUDING LIABILITY OR
WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, CONSEQUENTIAL OR
INCIDENTAL DAMAGES, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR
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OR COMPLETENESS OF THE INFORMATION, TEXT, GRAPHICS OR OTHER ITEMS CONTAINED WITHIN
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CONSEQUENTIAL DAMAGES, INCLUDING WITHOUT LIMITATION, LOST REVENUES OR LOST PROFITS,
WHICH MAY RESULT FROM THE USE OF THESE MATERIALS.
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customers using or selling MACOM products for use in such applications do so at their own risk and agree to
fully indemnify MACOM for any damages resulting from such improper use or sale.
7
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
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