MAGX-001220-1SB1PPR [TE]
GaN HEMT Power Transistor 100W Peak, 1.2 - 2.0 GHz; 氮化镓HEMT晶体管功率100W峰值， 1.2 - 2.0 GHz的
| 型号： | MAGX-001220-1SB1PPR |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | GaN HEMT Power Transistor 100W Peak, 1.2 - 2.0 GHz |
| 文件： | 总6页 (文件大小：833K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MAGX-001220-100L00
GaN HEMT Power Transistor
100W Peak, 1.2 - 2.0 GHz
Production V1
19 Sept 11
Features
GaN depletion mode HEMT microwave transistor
Common source configuration
Broadband Class AB operation
Thermally enhanced Cu/Mo/Cu package
RoHS Compliant
+50V Typical Operation
MTTF of 114 years (Channel Temperature < 200°C)
Applications
General purpose for pulsed or CW applications
Commercial Wireless Infrastructure
- WCDMA, LTE, WIMAX
Civilian and Military Radar
Military and Commercial Communications
Public Radio
Industrial, Scientific and Medical
SATCOM
Instrumentation
DTV
Product Description
Typical CW RF Performance
The MAGX-001220-100L00 is a gold metalized
Gallium Nitride (GaN) on Silicon Carbide RF power
transistor suitable for a variety of RF power
Freq.
Gain
(dB)
Id-Pk
(A)
Eff
Pin
Pout
(W Peak) (W Peak)
(MHz)
(%)
amplifier applications. Using state of the art wafer
fabrication processes, these high performance
transistors provide high gain, efficiency, bandwidth,
ruggedness over multiple octave bandwidths for
today’s demanding application needs. The MAGX-
001220-100L00 is constructed using a thermally
enhanced Cu/Mo/Cu flanged ceramic package
which provides excellent thermal performance. High
breakdown voltages allow for reliable and stable
operation in extreme mismatched load conditions
unparalleled with older semiconductor technologies.
1200
1400
1600
1800
2000
4
4
4
4
4
120
120
130
120
120
14.8
14.8
15.1
14.8
14.8
4.0
4.6
4.9
4.4
4.5
60
52
53
54
53
Ordering Information
MAGX-001220-100L00
MAGX-001220-1SB1PPR
100W GaN Power Transistor
Evaluation Board
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-001220-100L00
GaN HEMT Power Transistor
100W Peak, 1.2 - 2.0 GHz
Production V1
19 Sept 11
Absolute Maximum Ratings Table (1, 2, 3)
Supply Voltage (Vdd)
+65V
Supply Voltage (Vgg)
-8 to 0V
9A Pk
Supply Current (Id1)
Input Power (Pin)
+38 dBm
200 ºC
Absolute Max. Junction/Channel Temp
Pulsed Power Dissipation (Pavg) at 85 ºC
MTTF (TJ<200°C)
105W
114 years
Thermal Resistance, (Tchannel = 200 ºC)
VDD = 50V, IDQ = 100mA, Pout = 100W
300us Pulse / 10% Duty
0.84 ºC/W
Operating Temp
-40 to +95C
-65 to +150C
50 V
Storage Temp
ESD Min. - Machine Model (MM)
ESD Min. - Human Body Model (HBM)
MSL Level
>250 V
MSL1
(1) Operation of this device above any one of these parameters may cause permanent damage.
(2) Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as
possible to maximize lifetime.
(3) For saturated performance it recommended that the sum of (3*Vdd + abs(Vgg)) <175
Parameter
Test Conditions
Symbol Min
Typ
Max
Units
DC CHARACTERISTICS
Drain-Source Leakage Current
VGS = -8V, VDS = 175V
IDS
-
-
6
mA
Gate Threshold Voltage
VDS = 5V, ID = 15.0mA
VDS = 5V, ID = 3.5A
VGS (th)
GM
-5
-3
-
-2
-
V
S
Forward Transconductance
2.5
DYNAMIC CHARACTERISTICS
Input Capacitance
Not applicable—Input internally matched
N/A
COSS
CRSS
N/A
N/A
30.3
2.8
N/A
35
pF
pF
pF
Output Capacitance
Feedback Capacitance
VDS = 50V, VGS = -8V, F = 1MHz
VDS = 50V, VGS = -8V, F = 1MHz
-
-
5.4
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-001220-100L00
GaN HEMT Power Transistor
100W Peak, 1.2 - 2.0 GHz
Production V1
19 Sept 11
Electrical Specifications: TC = 25 ± 5°C (Room Ambient )
Parameter
Test Conditions
Symbol Min
Typ
Max
Units
RF FUNCTIONAL TESTS Vdd=50V, Idq=500mA (pulsed), F=1.2—2.0 GHz, Pulse=300us, Duty=10%
Output Power
Pin = 4W Peak, 0.4W Ave
POUT
100
110
-
W Peak
Power Gain
Pout = 100W Peak, 10W Ave
Pin = 4W Peak, 0.4W Ave
Pin = 4W Peak, 0.4W Ave
Pin = 4W Peak, 0.4W Ave
GP
14.0
50
14.8
-
-
-
-
dB
%
-
Drain Efficiency
ηD
55
-
Load Mismatch Stability
Load Mismatch Tolerance
VSWR-S
VSWR-T
5:1
10:1
-
-
Test Fixture Impedance
Zif
F (MHz)
ZIF (Ω)
ZOF (Ω)
INPUT
NETWORK
OUTPUT
NETWORK
1200
1400
1600
1800
2000
3.82 - j2.85
4.17 - j1.79
4.69 - j2.15
3.53 - j2.79
2.19 - j1.90
8.6 + j1.1
6.9 + j0.16
6.8 + j0.7
6.1 - j0.6
Zof
3.2 + j0.39
3
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-001220-100L00
GaN HEMT Power Transistor
100W Peak, 1.2 - 2.0 GHz
Production V1
19 Sept 11
RF Power Transfer Curve
160
140
120
100
80
1.2GHz
60
1.6GHz
2.0GHz
40
20
0
0
1
2
3
4
5
6
Pin(W)
RF Power Transfer Curve
Power Gain vs. Output Power
Return Loss vs. Frequency
0
-2
18
17
16
15
14
13
12
11
10
3W
4W
5W
-4
-6
-8
-10
-12
-14
-16
1.2GHz
1.6GHz
2.0GHz
0
20
40
60
80
100 120 140 160
1
1.2
1.4
1.6
1.8
2
2.2
Pout(W)
Freq(GHz)
4
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-001220-100L00
GaN HEMT Power Transistor
100W Peak, 1.2 - 2.0 GHz
Production V1
19 Sept 11
Test Fixture Circuit Dimensions
Note: A .dwg circuit drawing is available upon request
Test Fixture Assembly
5
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-001220-100L00
GaN HEMT Power Transistor
100W Peak, 1.2 - 2.0 GHz
Production V1
19 Sept 11
Outline Drawings
CORRECT DEVICE BIAS SEQUENCING
TURNING THE DEVICE ON
TURNING THE DEVICE OFF
1. Set VGS to the pinch-off (VP), typically -5V
2. Turn on VDS to nominal voltage (50V)
3. Increase VGS until the IDS current is reached
4. Apply RF power to desired level
1. Turn the RF power off
2. Decrease VGS down to VP
3. Decrease VDS down to 0V
4. Turn off VGS
6
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
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