MAGX-002735-040L00 [TE]
GaN HEMT Pulsed Power Transistor 2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle; 氮化镓HEMT脉冲功率晶体管2.7 - 3.5 GHz频段， 40W峰值， 300US脉冲，占空比为10％
| 型号： | MAGX-002735-040L00 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | GaN HEMT Pulsed Power Transistor 2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle |
| 文件： | 总7页 (文件大小：307K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MAGX-002735-040L00
GaN HEMT Pulsed Power Transistor
2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle
Production V1
26 March 12
Features
GaN depletion mode HEMT microwave transistor
Common source configuration
Broadband Class AB operation
Thermally enhanced Cu/Mo/Cu package
RoHS Compliant
+50V Typical Operation
MTTF of 600 years (Channel Temperature < 200°C)
Application
Civilian and Military Pulsed Radar
Product Description
The MAGX-002735-040L00 is a gold metalized matched Gallium
Nitride (GaN) on Silicon Carbide RF power transistor optimized for
civilian and military radar pulsed applications between 2700 - 3500
MHz. Using state of the art wafer fabrication processes, these high
performance transistors provide high gain, efficiency, bandwidth,
ruggedness over a wide bandwidth for today’s demanding
application needs. The MAGX-002735-040L00 is constructed using
a thermally enhanced Cu/Mo/Cu flanged ceramic package which
provides excellent thermal performance. High breakdown voltages
allow for reliable and stable operation in extreme mismatched load
conditions unparalleled with older semiconductor technologies.
Typical RF Performance
Pin
(W
Peak)
Pout
(W
Peak)
Freq
(MHz)
Gain Id-Pk
(dB)
Eff
(%)
(A)
2700
2800
4
4
44
45
10.4
10.5
1.7
1.7
53
53
2900
3000
3100
3200
3300
3400
3500
4
4
4
4
4
4
4
44
43
46
47
47
43
42
10.5
10.3
10.6
10.7
10.7
10.3
10.2
1.6
1.7
1.7
1.7
1.7
1.5
1.5
56
51
54
54
57
55
55
Typical RF performance measured in M/A-COM RF test fixture.
Devices tested in common source Class-AB configuration as
follows: Vdd=50V, Idq=250mA (pulsed), F=2.7—3.5 GHz,
Pulse=300us, Duty=10%.
Ordering Information
MAGX-002735-040L00
40W GaN Power Transistor
MAGX-002735-SB0PPR Evaluation Fixture
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-002735-040L00
GaN HEMT Pulsed Power Transistor
2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle
Production V1
26 March 12
Absolute Maximum Ratings Table (1, 2, 3)
Supply Voltage (Vdd)
+65V
Supply Voltage (Vgg)
-8 to 0V
3 A
Supply Current (Id1)
Input Power (Pin)
+36 dBm
200 ºC
27 W
Absolute Max. Junction/Channel Temp
Continuous Power Dissipation (Pdiss) at 85 ºC
Pulsed Power Dissipation (Pavg) at 85 ºC
55 W
MTTF (TJ<200°C)
600 years
Thermal Resistance, (Tchannel = 200 ºC)
Pulsed 500uS, 10% Duty cycle
2.0 ºC/W
Operating Temp
-40 to +95C
-65 to +150C
See solder reflow profile
50 V
Storage Temp
Mounting Temperature
ESD Min. - Machine Model (MM)
ESD Min. - Human Body Model (HBM)
MSL Level
>250 V
MSL1
(1) Operation of this device above any one of these parameters may cause permanent damage.
(2) Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as
possible to maximize lifetime.
(3) For saturated performance it recommended that the sum of (3*Vdd + abs(Vgg)) <175
Parameter
Test Conditions
Symbol Min
Typ
Max
Units
DC CHARACTERISTICS
Drain-Source Leakage Current
Gate Threshold Voltage
VGS = -8V, VDS = 175V
IDS
VGS (th)
GM
-
-
-3
-
2.5
-2
-
mA
V
V
V
DS = 5V, ID = 6mA
DS = 5V, ID = 1.5mA
-5
Forward Transconductance
1.0
S
DYNAMIC CHARACTERISTICS
Input Capacitance
VDS = 0v, VGS = -8V, F = 1MHz
VDS = 50V, VGS = -8V, F = 1MHz
CISS
COSS
CRSS
-
-
-
13.2
5.6
-
-
-
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
VDS = 50V, VGS = -8V, F = 1MHz
0.5
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-002735-040L00
GaN HEMT Pulsed Power Transistor
2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle
Production V1
26 March 12
Electrical Specifications: TC = 25 ± 5°C (Room Ambient )
Parameter
Test Conditions
Symbol Min Typ
Max
Units
Output Power
Pin = 4W Peak
POUT
36
3.6
44
4.4
-
W Peak
W Ave
Power Gain
Pin = 4W Peak
Pin = 4W Peak
Pin = 4W Peak
Pin = 4W Peak
GP
9.5
48
10.5
-
-
-
-
dB
%
-
Drain Efficiency
ηD
55
-
Load Mismatch Stability
Load Mismatch Tolerance
VSWR-S 5:1
VSWR-T 10:1
-
-
Test Fixture Impedance
F (MHz)
ZIF (Ω)
ZOF (Ω)
2700
2800
2900
3000
3100
3200
3300
3400
3500
9.2+ j2.1
9.0 + j1.5
8.7 + j0.8
8.3 + j0.1
7.8 - j0.7
7.0 - j1.5
6.0 - j2.0
4.9 - j2.1
4.2 - j2.7
7.5 + j8.9
7.9 + j8.9
8.2 + j8.5
8.3 + j8.3
8.2 + j8.4
9.1 + j8.3
9.4 + j7.2
9.4 + j7.2
9.0 + j6.8
3
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-002735-040L00
GaN HEMT Pulsed Power Transistor
2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle
Production V1
26 March 12
4
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-002735-040L00
GaN HEMT Pulsed Power Transistor
2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle
Production V1
26 March 12
5
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-002735-040L00
GaN HEMT Pulsed Power Transistor
2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle
Production V1
26 March 12
Test Fixture Assembly
6
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-002735-040L00
GaN HEMT Pulsed Power Transistor
2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle
Production V1
26 March 12
Outline Drawings
CORRECT DEVICE SEQUENCING
TURNING THE DEVICE ON
TURNING THE DEVICE OFF
1. Set VGS to the pinch-off (VP), typically -5V
2. Turn on VDS to nominal voltage (50V)
3. Increase VGS until the IDS current is reached
4. Apply RF power to desired level
1. Turn the RF power off
2. Decrease VGS down to VP
3. Decrease VDS down to 0V
4. Turn off VGS
7
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
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