MAGX-011086-SMBPPR [TE]
GaN Wideband Transistor 28 V, 4 W;
| 型号： | MAGX-011086-SMBPPR |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | GaN Wideband Transistor 28 V, 4 W |
| 文件： | 总10页 (文件大小：1326K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MAGX-011086
GaN Wideband Transistor 28 V, 4 W
DC - 6 GHz
Rev. V1
Features
GaN on Si HEMT D-Mode Transistor
Suitable for linear and saturated applications
Tunable from DC - 6 GHz
28 V Operation
9 dB Gain at 5.8 GHz
45% Drain Efficiency at 5.8 GHz
100% RF Tested
Thermally-Enhanced 4 mm 24-Lead QFN
RoHS* Compliant
Description
Functional Schematic
The MAGX-011086 GaN HEMT is a wideband
transistor optimized for DC - 6 GHz operation in a
user friendly package ideal for high bandwidth
applications. The device has been designed for
saturated and linear operation with output power
levels of 4 W (36 dBm) in an industry standard, low
inductance, surface mount QFN package. The pads
of the package form a coplanar launch that naturally
absorbs lead parasitics and features a small PCB
outline for space constrained applications.
N/C
N/C
N/C
N/C
N/C
20
N/C
19
24
23
22
21
1
2
3
4
5
6
18 N/C
N/C
N/C
17 N/C
16 RFOUT / VD
15 RFOUT / VD
14 N/C
RFIN / VG
RFIN / VG
N/C
Input
Match
The MAGX-011086 is ideally suited for Wireless
LAN, High Dynamic Range LNA’s, broadband
general purpose, land mobile radio, defense
communications, wireless infrastructure, and ISM
applications.
25
Paddle
13 N/C
N/C
7
8
9
N/C
10
N/C
11
12
N/C
N/C
N/C
N/C
Built using the SIGANTIC® process - a proprietary
GaN-on-Silicon technology.
Pin Configuration1
Pin No.
Pin Name
Function
1 - 2
3 - 4
N/C
RFIN / VG
N/C
No Connection
RF Input / Gate
No Connection
RF Output / Drain
No Connection
Ground / Source
Ordering Information
5 -14
15 - 16
17 - 24
25
Part Number
MAGX-011086
Package
RFOUT / VD
N/C
Paddle2
Bulk Quantity
Sample Board
MAGX-011086-SMBPPR
1. All no connection pins may be left floating or grounded.
2. The exposed pad centered on the package bottom must be
connected to RF and DC ground and provide a low thermal
resistance heat path.
*
Restrictions on Hazardous Substances, European Union
Directive 2011/65/EU.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAGX-011086
GaN Wideband Transistor 28 V, 4 W
DC - 6 GHz
Rev. V1
RF Electrical Specifications: TA = 25C, VDS = 28 V, IDQ = 50 mA
Parameter
Small Signal Gain
Test Conditions
CW, 5.8 GHz
Symbol
GSS
PSAT
hSAT
GP
Min.
Typ.
11
37
50
9
Max.
Units
dB
-
-
-
-
-
-
-
Saturated Output Power
Drain Efficiency at Saturation
Power Gain
CW, 5.8 GHz
dBm
%
CW, 5.8 GHz
-
5.8 GHz, POUT = 4 W
5.8 GHz, POUT = 4 W
All phase angles
8
40
dB
Drain Efficiency
h
45
%
Ruggedness: Output Mismatch
Y
VSWR = 10:1, No Device Damage
DC Electrical Characteristics: TA = 25C
Parameter
Test Conditions
Symbol
IDLK
Min.
Typ.
-
Max.
2
Units
mA
mA
V
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
On Resistance
VGS = -8 V, VDS = 100 V
VGS = -8 V, VDS = 0 V
VDS = +28 V, ID = 2 mA
VDS = +28 V, ID = 50 mA
VDS = +2 V, ID = 15 mA
-
-
IGLK
-
1
VT
-2.5
-2.1
-
-1.5
-1.2
2.0
-0.5
-0.3
-
VGSQ
RON
V
W
Saturated Drain Current
VDS = 7 V, Pulse Width 300 µs
ID(SAT)
-
1.4
-
A
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAGX-011086
GaN Wideband Transistor 28 V, 4 W
DC - 6 GHz
Rev. V1
Absolute Maximum Ratings3,4, 5
Parameter
Absolute Max.
Drain-Source Voltage, VDS
100 V
Gate-Source Voltage, VGS
Gate Current, IG
-10 V to 3 V
4 mA
Junction Temperature, TJ
Operating Temperature
Storage Temperature
+200°C
-40°C to +85°C
-65°C to +150°C
3. Exceeding any one or combination of these limits may cause permanent damage to this device.
4. MACOM does not recommend sustained operation near these survivability limits.
5. Operating at nominal conditions with TJ ≤ 200°C will ensure MTTF > 1 x 106 hours.
Thermal Characteristics6, 7
Parameter
Test Conditions
Symbol
Typ.
Units
Thermal Resistance
VDS = 28 V, TJ = 200°C
ӨJC
12.5
°C/W
6. Junction temperature (TJ) measured using IR Microscopy. Case temperature measured using thermocouple
embedded in heat-sink.
7. The thermal resistance of the mounting configuration must be added to the device ӨJC, for proper TJ calcula-
tion during operation. The recommended via pattern, shown on page 6, on a 20 mil thick, 1oz plated copper,
PCB contributes an additional 6.6 °C/W to the typical value.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Nitride Integrated Circuits are sensitive to
electrostatic discharge (ESD) and can be damaged
by static electricity. Proper ESD control techniques
should be used when handling these class 1A
devices.
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAGX-011086
GaN Wideband Transistor 28 V, 4 W
DC - 6 GHz
Rev. V1
Load-Pull Performance: VDS = 28 V, IDQ = 50 mA, TA = 25°C
Reference Plane at Device Leads, CW Drain Efficiency and Output Power Tradeoff Impedance
Frequency
(MHz)
Drain Efficiency
ZS
(W)
ZL
(W)
PSAT
(W)
GSS
(dB)
@ PSAT (%)
900
4.0 + j8.4
4.0 - j13.1
6.8 - j26.8
13.4 - j37.8
67.4 - j33.2
19.4 + j0.5
31.9 + j41.2
12.5 + j18.0
10.1 + j9.3
9.5 + j4.7
5.8
5.1
5.0
5.0
5.0
5.0
24.6
19.5
16.0
15.3
13.8
12.0
65
2500
3500
4000
5000
5800
63
57
56
55
55
8.2 + j1.2
7.7 - j8.4
Impedance Reference
ZS and ZL vs. Frequency
ZL
ZS
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAGX-011086
GaN Wideband Transistor 28 V, 4 W
DC - 6 GHz
Rev. V1
Load-Pull Performance: VDS = 28 V, IDQ = 50 mA, TA = 25°C
Reference Plane at Device Leads, CW Drain Efficiency and Output Power Tradeoff Impedance
Gain vs. Output Power
Drain Efficiency vs. Output Power
70
30
900 MHz
60
2500 MHz
25
20
3500 MHz
50
40
30
20
10
0
15
900 MHz
2500 MHz
3500 MHz
10
20
25
30
35
40
20
25
30
35
40
Output Power (dBm)
Output Power (dBm)
Gain vs. Output Power
Drain Efficiency vs. Output Power
20
70
60
50
40
30
20
10
0
4000 MHz
5000 MHz
5800 MHz
15
10
4000 MHz
5000 MHz
5800 MHz
5
20
25
30
35
40
20
25
30
Output Power (dBm)
35
40
Output Power (dBm)
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAGX-011086
GaN Wideband Transistor 28 V, 4 W
DC - 6 GHz
Rev. V1
Evaluation Board and Recommended Tuning Solution
5.8 GHz Narrowband Circuit
VGS
VDS
C1
1.0 mF
C2
0.1 mF
C3
0.01 mF
C4
1000 pF
C5
1.0 mF
C8
1000pF
C7
0.01 mF
C6
0.1 mF
R1
C10
200 W
3.3 pF
C11
3.3 pF
C9
4.7 pF
C12
3.3 pF
RF
Out
MAGX-011086
C16
3.3 pF
C17
0.3 pF
RF
In
C15
1.2 pF
C13
0.2 pF
C14
0.5 pF
Description
Bias Sequencing
Parts measured on evaluation board (20-mil thick
RO4350). The PCB’s electrical and thermal ground
is provided using a standard-plated densely packed
via hole array (see recommended via pattern).
Turning the device ON
1. Set VGS beyond pinch-off (VP), typically -5 V.
2. Turn on VDS to nominal voltage (28 V).
3. Increase VGS until the IDS current is reached.
4. Apply RF power to desired level.
Matching is provided using a combination of
lumped elements and transmission lines as shown
in the simplified schematic above. Recommended
tuning solution component placement, transmission
lines, and details are shown on the next page.
Turning the device OFF
1. Turn the RF power off.
2. Decrease VGS down to VP.
3. Decrease VDS down to 0 V.
4. Turn off VGS.
Recommended Via Pattern (All dimensions shown as inches)
6
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAGX-011086
GaN Wideband Transistor 28 V, 4 W
DC - 6 GHz
Rev. V1
Evaluation Board and Recommended Tuning Solution
5.8 GHz Narrowband Circuit
Parts list
Reference
Value
1.0 µF
Tolerance
10 %
Manufacturer
AVX
Part Number
12101C105KAT2A
C1206C104K1RACTU
12061C103KAT2A
C0805C102K1RACTU
ATC800A4R7B250
ATC800A3R3B250
ATC800A0R2B250
ATC800A0R5B250
ATC800A1R2B250
ATC800A0R3B250
ERJ-6ENF2000V
132150
C1, C5
C2, C6
0.1 µF
10 %
Kemet
C3, C7
0.01 µF
1000 pF
4.7 pF
10 %
AVX
C4, C8
10 %
Kemet
C9
0.1 pF
0.1 pF
0.1 pF
0.1 pF
0.1 pF
0.1 pF
1 %
ATC
C10, C11, C12, C16
3.3 pF
ATC
C13
C14
0.2 pF
ATC
0.5 pF
ATC
C15
1.2 pF
ATC
C17
0.3 pF
ATC
R1
200 Ω
Panasonic
Amphenol-Connex
ERNI
RF Connector
DC Connector
PCB
SMA
D-Subminiature
RO4350
284525
Rogers Corp
7
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAGX-011086
GaN Wideband Transistor 28 V, 4 W
DC - 6 GHz
Rev. V1
Typical Performance as measured in the 5.8 GHz evaluation board:
CW, VDS = 28 V, IDQ = 50 mA (unless noted)
Gain vs. Output Power over Temperature
Drain Efficiency vs. Output Power over Temperature
14
50
40
30
20
10
0
+25°C
-40°C
+85°C
12
10
8
6
+25°C
-40°C
+85°C
4
2
15
15
20
25
30
35
40
20
25
30
35
40
Output Power (dBm)
Output Power (dBm)
Quiescent VGS vs. Temperature
-1.0
-1.1
-1.2
-1.3
-1.4
-1.5
-1.6
25 mA
50 mA
75 mA
-50
-25
0
25
50
75
100
Temperature (°C)
8
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAGX-011086
GaN Wideband Transistor 28 V, 4 W
DC - 6 GHz
Rev. V1
Typical 2-Tone Performance as measured in the 5.8 GHz evaluation board:
1 MHz Tone Spacing, VDS = 28 V, IDQ = 50 mA, TA = 25°C (unless noted)
2-Tone IMD3 vs. Output Power vs. Quiescent Current
2-Tone Gain vs. Output Power vs. Quiescent Current
-10
12
13mA
25mA
-15
11
10
9
38mA
50mA
75mA
-20
-25
-30
-35
-40
-45
13mA
25mA
8
38mA
50mA
75mA
7
0.1
1
10
0.1
1
10
POUT (W-PEP)
POUT (W-PEP)
2-Tone IMD vs. Output Power
-10
-IMD3
+IMD3
-IMD5
-20
+IMD5
-IMD7
+IMD7
-30
-40
-50
-60
0.1
1
10
POUT (W-PEP)
9
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAGX-011086
GaN Wideband Transistor 28 V, 4 W
DC - 6 GHz
Rev. V1
Lead Free 4 mm 24 Lead QFN Plastic Package†
All dimensions shown as inches [millimeters]
†
Meets JEDEC moisture sensitivity level 3 requirements.
Plating is Matte Sn
10
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
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