MAGX-S00245-025000 [TE]

GaN on SiC HEMT Power Transistor;


型号：	MAGX-S00245-025000
厂家：	TE CONNECTIVITY
描述：	GaN on SiC HEMT Power Transistor
文件：	总6页 (文件大小：1070K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MAGX-000245-025000

GaN on SiC HEMT Power Transistor

25 W, DC-2.5 GHz, CW Power

Rev. V1

Features

MAGX-000245-025000



GaN on SiC Depletion Mode Transistor

Common-Source Configuration

Broadband Class AB Operation

Thermally Enhanced Cu/Mo/Cu Package

RoHS* Compliant

+28V Typical Operation

MTTF = 600 years (T_J< 200°C)

Primary Applications



RF Lighting

RF Plasma Generation

RF Heating

RF Drying

Material Processing

Power Industrial Equipment

ISM

Broadcast

MILCOM

Ordering Information

Datalinks

Part Number

Description

Air Traffic Control Radar - Commercial

Weather Radar - Commercial

Military Radar - Military

MAGX-000245-025000

Bulk Packaging

MAGX-S00245-025000

Sample Board (2.45 GHz)

Description

The MAGX-000245-025000 is a gold metalized

unmatched Gallium Nitride (GaN) on Silicon

Carbide (SiC) RF power transistor suitable for

CW applications centered at 2.45GHz for

application

ISM/Broadcast/Plasma

applications. This product differentiates itself

from other GaN power transistors in that it runs

well in CW. The matching network is compact

and small. The frequency of operation covers

DC - 2.5 GHz which captures commercial as well

as military applications. This product is designed

as a high power driver amplifier or final stage

depending on the application. Using state of the

art wafer fabrication processes, these high

performance transistors provide high gain,

efficiency, bandwidth and ruggedness over a

wide bandwidth for today’s demanding

application needs. The MAGX-000245-025000 is

constructed using a thermally enhanced Cu/Mo/

Cu flanged ceramic package which provides

excellent thermal performance.

* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macomtech.com for additional data sheets and product information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

MAGX-000245-025000

GaN on SiC HEMT Power Transistor

25 W, DC-2.5 GHz, CW Power

Rev. V1

Electrical Specifications¹: Freq. = 2450 MHz, T_A= 25°C

Parameter

Test Conditions

Symbol

Min.

Typ.

Max.

Units

RF Functional Tests: V_DD= +28 V, I_DQ= 100 mA, CW Operation

Input Power

Power Gain

P_out= 25 W

P_in

G_P

10.2

1.6

2.4

Drain Efficiency

η_D

Load Mismatch Stability

Load Mismatch Tolerance

VSWR-S

VSWR-T

5:1

10:1

Electrical Characteristics: T_A= 25°C

Parameter

DC Characteristics

Test Conditions

Symbol Min.

Typ.

Max.

Units

Drain-Source Leakage Current

Gate Threshold Voltage

Forward Transconductance

Dynamic Characteristics

Input Capacitance

V_GS= -8 V, V_DS= 175 V

V_DS= 5 V, I_D= 6 mA

I_DS

V_{GS (TH)}

G_M

-3

3.0

-2

-5

V_DS= 5 V, I_D= 1500 mA

1.1

V_DS= 0 V, V_GS= -8 V, F = 1 MHz

V_DS= 50 V, V_GS= -8 V, F = 1 MHz

C_ISS

C_OSS

C_RSS

13.2

5.6

Output Capacitance

Reverse Transfer Capacitance

0.5

Correct Device Sequencing

Turning the device ON

1. Set V_GSto the pinch-off (V_P), typically -5 V.

2. Turn on V_DSto nominal voltage (+28V).

3. Increase V_GSuntil the I_DScurrent is reached.

4. Apply RF power to desired level.

Turning the device OFF

1. Turn the RF power off.

2. Decrease V_GSdown to V_P.

3. Decrease V_DSdown to 0 V.

4. Turn off V_GS.

1. Electrical Specifications measured in MACOM RF evaluation board.

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macomtech.com for additional data sheets and product information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

MAGX-000245-025000

GaN on SiC HEMT Power Transistor

25 W, DC-2.5 GHz, CW Power

Rev. V1

Absolute Maximum Ratings^2,3,4

Parameter

Limit

+32 V

Supply Voltage (V_DD

)

Supply Voltage (V_Gg

)

-8 to 0 V

3 A

Supply Current (I_DMAX) for CW Operation at V_DD= +32 V

Input Power (P_IN) for CW Operation at V_DD= +28 V

Absolute Max. Junction/Channel Temperature

P_IN(nominal) + 3 dB

200ºC

Power Dissipation at 85 ºC for CW Operation at V_DD= +28 V

13 W

MTTF (T_J<200°C)

600 years

Thermal Resistance, (T_J= 200 ºC)

V_DD= 28 V, I_DQ= 100 mA, CW Operation

9.0 ºC/W

Operating Temperature

-40 to +95ºC

-65 to +150ºC

See solder reflow profile

200 V

Storage Temperature

Mounting Temperature

ESD Min. - Charged Device Model (CDM)

ESD Min. - Human Body Model (HBM)

2. Operation of this device above any one of these parameters may cause permanent damage.

550 V

3. Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime.

4. For saturated performance it is recommended that the sum of (3*V_DD+ abs(V_GG)) <175 V.

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macomtech.com for additional data sheets and product information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

MAGX-000245-025000

GaN on SiC HEMT Power Transistor

25 W, DC-2.5 GHz, CW Power

Rev. V1

Test Fixture Assembly (2450 MHz, CW Operation)

Test Fixture Impedances

Zif

F (MHz)

Z_IF(Ω)

Z_OF(Ω)

INPUT

OUTPUT

2450

1.6 - j4.5

5.6 + j3.9

NETWORK

Zof

Parts List

Reference Designator

Part Description

Manufacturer Part Number

0.1 µF, 0402, X7R, 10%, 16 V, Murata

10 nF, 0402, X7R, 10%, 50 V, Murata

0.1 µF, 0805, X7R, 10%, 100 V, TDK

5000 pF, 100B, 5%, 250 V, ATC

12 pF, 0402, ± 1%, 200 V, ATC

12 pF, 0603, ± 2%, 250 V, ATC

2.4 pF, 0603, ± 0.05 pF, 250 V, ATC

2.4 pF, 0402, ± 1 %, 200 V, ATC

1.3 pF, 0603, ± 0.1 pF, 250 V, ATC

1.6 pF, 0603, ± 0.1 pF, 250 V, ATC

1.5 pF, 0402, ± 0.1 pF, 200 V, ATC

100 µF, 160 V, Electrolytic Capacitor

Not Populated

GRM155R71C104K

GRM155R71H103K

C2012X7R2A104K125AA

ATC600L120FT

ATC600S120GT

ATC600S2R4BT

ATC600L2R4FT

ATC600S1R3BT

ATC600S1R6BT

ATC600L1R5FT

C16

C15

C3, C4

C12, C13

C10

C11

C17

C5, C8, C14

J1, J2

10 nH, 0402, 2%, Coilcraft

200 Ω, 0402, 5%, Panasonic

3K Ω, 0402, 5%, Panasonic

11 Ω, 0402, 1%, Panasonic

2.2 Ω, 1206, 1%, Panasonic

0402HP-10NXGLW

ERJ-2GEJ201X

ERJ-2GEJY302X

ERJ-2RKF11R0X

CR1206-J/-2R2ELF

2052-5636-02

SMA Connector

Contact factory for Gerber file or additional circuit information.

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macomtech.com for additional data sheets and product information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

MAGX-000245-025000

GaN on SiC HEMT Power Transistor

25 W, DC-2.5 GHz, CW Power

Rev. V1

Application Section

Typical Performance Curves

2450 MHz, V_DD= 28 V, CW Operation, T_A= 25°C

Gain, Drain Efficiency, and PAE vs. Output Power over I_DQ

I_DQ= 50mA

I_DQ= 100mA

I_DQ= 200mA

I_DQ= 300mA

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macomtech.com for additional data sheets and product information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

MAGX-000245-025000

GaN on SiC HEMT Power Transistor

25 W, DC-2.5 GHz, CW Power

Rev. V1

Outline Drawing MAGX-000245-025000

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macomtech.com for additional data sheets and product information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

MAGX-S00245-025000 [TE]

相关型号：

MAGX-S10035-045000

MAGX-S32731-180L00

MAH

MAH

MAH-R11FAAFREQ

MAH-R11FADFREQ

MAH-R11FAGFREQ

MAH-R11FAXFREQ

MAH-R11FBAFREQ

MAH-R11FBDFREQ

MAH-R11FBGFREQ

MAH-R11FBXFREQ