MAGX-S10035-045000 [TE]

Broadband Class AB Operation;


型号：	MAGX-S10035-045000
厂家：	TE CONNECTIVITY
描述：	Broadband Class AB Operation
文件：	总8页 (文件大小：946K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MAGX-000035-045000

GaN on SiC HEMT Pulsed Power Transistor

45 W Peak, DC-3500 MHz, 1 ms Pulse, 10% Duty

Rev. V2

Features

MAGX-000035-045000



GaN on SiC Depletion Mode Transistor

Common-Source Configuration

Broadband Class AB Operation

Thermally Enhanced Cu/Mo/Cu Package

RoHS* Compliant

+50V Typical Operation

MTTF = 600 years (T_J< 200°C)

Application



Civilian and Military Pulsed Radar

Description

The MAGX-000035-045000 is a gold metalized

unmatched Gallium Nitride (GaN) on Silicon Carbide

(SiC) RF power transistor optimized for civilian and

military radar pulsed applications between DC -

3500 MHz. Using state of the art wafer fabrication

processes, these high performance transistors

provide high gain, efficiency, bandwidth and

ruggedness over a wide bandwidth for today’s

demanding application needs. The MAGX-000035-

045000 is constructed using a thermally enhanced

Cu/Mo/Cu flanged ceramic package which provides

excellent thermal performance. High breakdown

voltages allow for reliable and stable operation in

extreme mismatched load conditions unparalleled

with older semiconductor technologies.

Ordering Information

Part Number

Description

MAGX-000035-045000

Bulk Packaging

MAGX-S10035-045000 Sample Board (2.7 - 3.5 GHz)

* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

MAGX-000035-045000

GaN on SiC HEMT Pulsed Power Transistor

45 W Peak, DC-3500 MHz, 1 ms Pulse, 10% Duty

Rev. V2

Electrical Specifications¹: Freq. = 2700-3500 MHz, T_A= 25°C

Parameter

Test Conditions

Symbol

Min.

Typ.

Max.

Units

RF Functional Tests: V_DD= 50 V, I_DQ= 100 mA, 1 ms Pulse, 10% Duty

Output Power

Power Gain

P_IN= 4 W

P_OUT

G_P

11.3

10.5

Drain Efficiency

η_D

Input Return Loss

Load Mismatch Stability

Load Mismatch Tolerance

IRL

-8

VSWR-S

VSWR-T

5:1

10:1

Electrical Specifications¹: Freq. = 1030-1090 MHz, T_A= 25°C

Parameter

Test Conditions

Symbol

Min.

Typ.

Max.

Units

RF Functional Tests: V_DD= 50 V, I_DQ= 100 mA, 1 ms Pulse, 10% Duty

Output Power

Power Gain

P_IN= 0.9 W

P_OUT

G_P

Drain Efficiency

η_D

Input Return Loss

Load Mismatch Stability

Load Mismatch Tolerance

IRL

-8

VSWR-S

VSWR-T

5:1

10:1

Electrical Characteristics: T_A= 25°C

Parameter

DC Characteristics

Test Conditions

Symbol Min.

Typ.

Max.

Units

Drain-Source Leakage Current

Gate Threshold Voltage

Forward Transconductance

Dynamic Characteristics

Input Capacitance

V_GS= -8 V, V_DS= 175 V

V_DS= 5 V, I_D= 6 mA

I_DS

V_{GS (TH)}

G_M

-3

3.0

-2

-5

V_DS= 5 V, I_D= 1500 mA

1.1

V_DS= 0 V, V_GS= -8 V, F = 1 MHz

V_DS= 50 V, V_GS= -8 V, F = 1 MHz

C_ISS

C_OSS

C_RSS

13.2

5.6

Output Capacitance

Reverse Transfer Capacitance

0.5

1. Electrical Specifications measured in MACOM RF evaluation board.

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

MAGX-000035-045000

GaN on SiC HEMT Pulsed Power Transistor

45 W Peak, DC-3500 MHz, 1 ms Pulse, 10% Duty

Rev. V2

Absolute Maximum Ratings^2,3,4

Parameter

Limit

+65 V

Supply Voltage (V_DD) (Pulsed)

Supply Voltage (V_Gg

)

-8 to 0 V

3 A

Supply Current (I_DMAX) for pulsed operation at V_DD= 50 V

Input Power (P_IN) for pulsed operation at V_DD= 50 V

Absolute Max. Junction/Channel Temperature

P_IN(nominal) + 3 dB

200ºC

Power Dissipation at 85 ºC for pulsed operation at V_DD= 50 V

48 W

MTTF (T_J<200°C)

600 years

Thermal Resistance, (T_J= 200 ºC)

V_DD= 50 V, I_DQ= 100 mA, Pulsed 1 ms, 10% Duty Cycle

2.3 ºC/W

Operating Temperature

-40 to +95ºC

-65 to +150ºC

See solder reflow profile

200 V

Storage Temperature

Mounting Temperature

ESD Min. - Charged Device Model (CDM)

ESD Min. - Human Body Model (HBM)

2. Operation of this device above any one of these parameters may cause permanent damage.

550 V

3. Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime.

4. For saturated performance it is recommended that the sum of (3*V_DD+ abs(V_GG)) <175 V.

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

MAGX-000035-045000

GaN on SiC HEMT Pulsed Power Transistor

45 W Peak, DC-3500 MHz, 1 ms Pulse, 10% Duty

Rev. V2

Test Fixture Assembly (2700-3500 MHz)

Test Fixture Impedances

Correct Device Sequencing

Turning the device ON

F (MHz)

Z_IF(Ω)

Z_OF(Ω)

2700

2900

3100

3300

3500

7.7 - j3.9

8.0 - j5.2

7.2 - j6.8

5.2 - j7.7

3.1 - j7.1

7.5 + j3.0

7.9 + j1.8

7.5 + j8.3

6.8 + j3.9

6.0 + j7.1

1. Set V_GSto the pinch-off (V_P), typically -5 V.

2. Turn on V_DSto nominal voltage (+50V).

3. Increase V_GSuntil the I_DScurrent is reached.

4. Apply RF power to desired level.

Turning the device OFF

1. Turn the RF power off.

2. Decrease V_GSdown to V_P.

3. Decrease V_DSdown to 0 V.

4. Turn off V_GS.

Zif

INPUT

NETWORK

OUTPUT

NETWORK

Zof

Contact factory for Gerber file or additional circuit information.

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

MAGX-000035-045000

GaN on SiC HEMT Pulsed Power Transistor

45 W Peak, DC-3500 MHz, 1 ms Pulse, 10% Duty

Rev. V2

Application Section

Typical Performance Curves

2700 - 3500 MHz, 1 ms Pulse, 10% Duty, V_DD= 50 V, Idq = 100 mA, T_A= 25°C

Output Power Vs. Input Power

Drain Efficiency Vs. Output Power

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

MAGX-000035-045000

GaN on SiC HEMT Pulsed Power Transistor

45 W Peak, DC-3500 MHz, 1 ms Pulse, 10% Duty

Rev. V2

Application Section

Typical Performance Curves

2700 - 3500 MHz, 1 ms Pulse, 10% Duty, V_DD= 50 V, Idq = 100 mA, T_A= 25°C

Gain vs. Frequency

Input Return Loss vs. Frequency

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

MAGX-000035-045000

GaN on SiC HEMT Pulsed Power Transistor

45 W Peak, DC-3500 MHz, 1 ms Pulse, 10% Duty

Rev. V2

Application Section

Typical Performance Curves

1030 - 1090 MHz, 1 ms Pulse, 10% Duty, V_DD= 50 V, Idq = 100 mA, T_A= 25°C

Output Power vs. Input Power

Drain Efficiency Vs. Output Power

Gain vs. Output Power

Input Return Loss vs. Frequency

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

MAGX-000035-045000

GaN on SiC HEMT Pulsed Power Transistor

45 W Peak, DC-3500 MHz, 1 ms Pulse, 10% Duty

Rev. V2

Outline Drawing MAGX-000035-045000

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

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