MAGX-003135-120L00 [TE]
GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty; 氮化镓HEMT脉冲功率晶体管3.1 - 3.5 GHz频段，峰值120W ， 300US脉冲， 10 ％占空比
| 型号： | MAGX-003135-120L00 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty |
| 文件： | 总11页 (文件大小：474K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MAGX-003135-120L00
GaN HEMT Pulsed Power Transistor
3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty
Production V1
02 Dec 11
Features
•
•
•
•
•
•
•
•
GaN depletion mode HEMT microwave transistor
Common source configuration
Broadband Class AB operation
Thermally enhanced Cu/Mo/Cu package
RoHS Compliant
+50V Typical Operation
MTTF of 114 years (Channel Temperature < 200°C)
EAR99 Export Classification
Application
Product Description
The MAGX-003135-120L00 is a gold metalized matched
Gallium Nitride (GaN) on Silicon Carbide RF power transistor
optimized for civilian and military radar pulsed applications
between 3100 - 3500 MHz. Using state of the art wafer
fabrication processes, these high performance transistors
provide high gain, efficiency, bandwidth, ruggedness over a
wide bandwidth for today’s demanding application needs. The
MAGX-003135-120L00 is constructed using a thermally
enhanced Cu/Mo/Cu flanged ceramic package which provides
excellent thermal performance. High breakdown voltages allow
for reliable and stable operation in extreme mismatched load
conditions unparalleled with older semiconductor technologies.
Typical Peak RF Performance
50V, 100us, 10%
50V, 300us, 10%
Eff
Eff
Pout
Pout
Pout
Pout
Pout
Pout
Freq.
Gain
RL
Freq.
Gain
RL
(MHz)
(dB) (dB)
(%)
(MHz)
(dB) (dB)
(%)
(W Peak) (W Peak) (W Ave)
(W Peak) (W Peak) (W Ave)
3100
10
134.3
13.4
11.3
-7
50.3
3100
10
142
14.2
11.5
-7
52.0
3300
3500
10
10
138.6
134.1
13.8
13.4
11.4
11.2
-9
50.3
49.5
3300
3500
10
10
145
140
14.5
14.0
11.6
11.5
-9
51.6
50.2
-12
-12
Typical RF performance measured in M/A-COM RF test fixture. Devices tested in common source Class-AB configuration as follows:
Vdd=50V, Idq=300mA (pulsed gate bias), F=3.1 - 3.5 GHz, Pulse Width=300us, Duty=10%.
Ordering Information
MAGX-003135-120L00
MAGX-003135-SB5PPR
120W GaN Power Transistor
Evaluation Fixture
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-003135-120L00
GaN HEMT Pulsed Power Transistor
3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty
Production V1
02 Dec 11
Absolute Maximum Ratings Table (1, 2, 3)
Supply Voltage (Vdd)
+65V
-8 to 0V
Supply Voltage (Vgg)
Supply Current (Id1)
6700 mA
+36 dBm
200 ºC
Input Power (Pin)
Absolute Max. Junction/Channel Temp
MTTF (TJ<200°C)
114 years
170 W (100us)
Pulsed Power Dissipation (Pavg) at 85 ºC
144 W (300us)
0.5 °C/W
Thermal Resistance, (Tchannel = 200 ºC)
V
DD = 50V, IDQ = 300mA, Pin = 10Wpk,Pulse Width 100uS, Duty 10%
Thermal Resistance, (Tchannel = 200 ºC)
0.8 °C/W
V
DD = 50V, IDQ = 300mA, Pin = 10Wpk, Pulse width 300uS, Duty 10%
Operating Temp
-40 to +95C
-65 to +150C
See solder reflow profile
50 V
Storage Temp
Mounting Temperature
ESD Min. - Machine Model (MM)
ESD Min. - Human Body Model (HBM)
MSL Level
>250 V
MSL1
(1) Operation of this device above any one of these parameters may cause permanent damage.
(2) Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to
maximize lifetime.
(3) For saturated performance it recommended that the sum of (3*Vdd + abs(Vgg)) <175
Parameter
Test Conditions
Symbol Min
Typ
Max
Units
DC CHARACTERISTICS
Drain-Source Leakage Current
Gate Threshold Voltage
VGS = -8V, VDS = 175V
VDS = 5V, ID = 23mA
IDS
-
0.5
-3
9
mA
V
VGS (th)
-5
-2
Forward Transconductance
V
DS = 5V, ID = 9A
GM
3.3
-
-
S
DYNAMIC CHARACTERISTICS
Input Capacitance
Not applicable - Input internally
CGS
N/A
N/A
N/A
pF
matched
Output Capacitance
VDS = 50V, VGS = -8V, F = 1MHz
COSS
CRSS
-
-
13.4
1.4
16
pF
pF
Reverse Transfer Capacitance
VDS = 50V, VGS = -8V, F = 1MHz
2.2
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-003135-120L00
GaN HEMT Pulsed Power Transistor
3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty
Production V1
02 Dec 11
Electrical Specifications: TC = 25 ± 5°C (Room Ambient
)
Parameter
Test Conditions
Symbol Min
Typ
Max
Units
RF FUNCTIONAL TESTS (VDD = 50V, IDQ = 300mA, 300us pulse / 10% duty, 3.1 - 3.5 GHz)
Output Power
Pin = 10W Peak, 1W Ave
POUT
120
12
135
13.5
-
W Peak
W Ave
Power Gain
Pin = 10W Peak, 1W Ave
Pin = 10W Peak, 1W Ave
Pin = 10W Peak, 1W Ave
Pin = 10W Peak, 1W Ave
GP
10.8
45
11.8
-
-
dB
%
-
Drain Efficiency
ηD
52
-
Load Mismatch Stability
Load Mismatch Tolerance
VSWR-S
VSWR-T
5:1
10:1
-
-
Test Fixture Impedance
F (MHz)
ZIF (Ω)
ZOF (Ω)
3100
3300
3500
5.9 - j4.2
5.2 - j4.8
3.9 - j5.0
4.1 - j2.4
4.0 - j2.8
2.6 - j2.6
3
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-003135-120L00
GaN HEMT Pulsed Power Transistor
3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty
Production V1
02 Dec 11
4
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-003135-120L00
GaN HEMT Pulsed Power Transistor
3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty
Production V1
02 Dec 11
5
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-003135-120L00
GaN HEMT Pulsed Power Transistor
3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty
Production V1
02 Dec 11
6
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-003135-120L00
GaN HEMT Pulsed Power Transistor
3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty
Production V1
02 Dec 11
7
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-003135-120L00
GaN HEMT Pulsed Power Transistor
3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty
Production V1
02 Dec 11
8
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-003135-120L00
GaN HEMT Pulsed Power Transistor
3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty
Production V1
02 Dec 11
9
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-003135-120L00
GaN HEMT Pulsed Power Transistor
3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty
Production V1
02 Dec 11
Test Fixture Assembly
10
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-003135-120L00
GaN HEMT Pulsed Power Transistor
3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty
Production V1
02 Dec 11
Outline Drawing
CORRECT DEVICE SEQUENCING
TURNING THE DEVICE ON
TURNING THE DEVICE OFF
1. Set VGS to the pinch-off (VP), typically -5V
2. Turn on VDS to nominal voltage (60V)
3. Increase VGS until the IDS current is reached
4. Apply RF power to desired level
1. Turn the RF power off
2. Decrease VGS down to VP
3. Decrease VDS down to 0V
4. Turn off VGS
11
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
相关型号：
MAGX-003135-SB3PPR
GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 180W Peak, 300us Pulse, 10% Duty
TE
MAGX-003135-SB5PPR
GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty
TE
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