MAGX-003135-SB1PPR [TE]
GaN depletion mode HEMT microwave transistor RoHS Compliant; 氮化镓耗尽型HEMT微波晶体管符合RoHS
| 型号： | MAGX-003135-SB1PPR |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | GaN depletion mode HEMT microwave transistor RoHS Compliant |
| 文件： | 总8页 (文件大小：908K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MAGX-003135-030L00
GaN HEMT Pulsed Power Transistor
3.1 - 3.5 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle
Production V1
23 Aug 11
Features
GaN depletion mode HEMT microwave transistor
Common source configuration
Broadband Class AB operation
Thermally enhanced Cu/Mo/Cu package
RoHS Compliant
+50V Typical Operation
MTTF of 114 years (Channel Temperature < 200°C)
Application
Civilian and Military Pulsed Radar
Product Description
The MAGX-003135-030L00 is a gold metalized matched
Gallium Nitride (GaN) on Silicon Carbide RF power transistor
optimized for civilian and military radar pulsed applications
between 3100 - 3500 MHz. Using state of the art wafer
fabrication processes, these high performance transistors
provide high gain, efficiency, bandwidth, ruggedness over a
wide bandwidth for today’s demanding application needs. The
MAGX-003135-030L00 is constructed using a thermally
enhanced Cu/Mo/Cu flanged ceramic package which provides
excellent thermal performance. High breakdown voltages allow
for reliable and stable operation in extreme mismatched load
conditions unparalleled with older semiconductor technologies.
Typical RF Performance
Freq.
(MHz)
Gain
(dB)
Eff
(%)
Pin
Pout
(W Peak) (W Peak)
3100
3300
3500
3
3
3
40
40
34
11.2
11.2
10.5
59.3
57.7
51.2
Typical RF performance measured in M/A-COM RF test fixture.
Devices tested in common source Class-AB configuration as
follows: Vdd=50V, Idq=130mA (pulsed), F=3.1-3.5GHz,
Pulse=500us, Duty=10%.
Ordering Information
MAGX-003135-030L00
MAGX-003135-SB1PPR
30W GaN Power Transistor
Evaluation Fixture
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-003135-030L00
GaN HEMT Pulsed Power Transistor
3.1 - 3.5 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle
Production V1
23 Aug 11
Absolute Maximum Ratings Table (1, 2, 3)
Supply Voltage (Vdd)
+65V
Supply Voltage (Vgg)
-8 to 0V
3000 mA
+30 dBm
200 ºC
Supply Current (Id1)
Input Power (Pin)
Absolute Max. Junction/Channel Temp
MTTF (TJ<200°C)
114 years
27 W
Continuous Power Dissipation (Pdiss) at 85 ºC
Pulsed Power Dissipation (Pavg) at 85 ºC
65 W
Thermal Resistance, (Tchannel = 200 ºC)
Pulsed 500uS, 10% Duty cycle
1.8 ºC/W
Operating Temp
-40 to +95C
-65 to +150C
See solder reflow profile
50 V
Storage Temp
Mounting Temperature
ESD Min. - Machine Model (MM)
ESD Min. - Human Body Model (HBM)
MSL Level
>250 V
MSL1
(1) Operation of this device above any one of these parameters may cause permanent damage.
(2) Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as
possible to maximize lifetime.
(3) For saturated performance it recommended that the sum of (3*Vdd + abs(Vgg)) <175
Parameter
Test Conditions
Symbol Min
Typ
Max
Units
DC CHARACTERISTICS
Drain-Source Leakage Current
Gate Threshold Voltage
VGS = -8V, VDS = 175V
IDS
VGS (th)
GM
-
-
-3
-
2.5
-2
-
mA
V
VDS = 5V, ID = 6mA
VDS = 5V, ID = 1.5mA
-5
Forward Transconductance
1.0
S
DYNAMIC CHARACTERISTICS
Input Capacitance
VDS = 0v, VGS = -8V, F = 1MHz
CISS
COSS
CRSS
-
-
-
13.2
5.6
-
-
-
pF
pF
pF
Output Capacitance
VDS = 50V, VGS = -8V, F = 1MHz
VDS = 50V, VGS = -8V, F = 1MHz
Reverse Transfer Capacitance
0.5
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-003135-030L00
GaN HEMT Pulsed Power Transistor
3.1 - 3.5 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle
Production V1
23 Aug 11
Electrical Specifications: TC = 25 ± 5°C (Room Ambient )
Parameter
Test Conditions
Symbol Min
Typ
Max
Units
RF FUNCTIONAL TESTS Vdd=50V, Idq=130mA (pulsed), F=3.1-3.5GHz, Pulse=500us, Duty=10%.
Output Power
Pin = 3W Peak
POUT
30
3
40
4
-
W Peak
W Ave
Power Gain
Pout = 30W Peak
Pin = 3W Peak
Pin = 3W Peak
Pin = 3W Peak
GP
10.0
50
11.0
-
-
dB
%
-
Drain Efficiency
ηD
55
-
Load Mismatch Stability
Load Mismatch Tolerance
VSWR-S
VSWR-T
5:1
10:1
-
-
Test Fixture Impedance
Zif
F (MHz)
ZIF (Ω)
ZOF (Ω)
INPUT
NETWORK
OUTPUT
NETWORK
3100
3300
3500
7.6 - j12.5
7.5 - j11.4
7.2 - j10.2
5.2 - j0.2
6.0 + j0.2
6.7 + j0.1
Zof
3
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-003135-030L00
GaN HEMT Pulsed Power Transistor
3.1 - 3.5 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle
Production V1
23 Aug 11
Gain vs. Frequency
50V Drain Bias, Idq=0.13A
Gain vs. Frequency
65V Drain Bias, Idq=0.13A
4
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-003135-030L00
GaN HEMT Pulsed Power Transistor
3.1 - 3.5 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle
Production V1
23 Aug 11
5
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-003135-030L00
GaN HEMT Pulsed Power Transistor
3.1 - 3.5 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle
Production V1
23 Aug 11
6
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-003135-030L00
GaN HEMT Pulsed Power Transistor
3.1 - 3.5 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle
Production V1
23 Aug 11
Test
Note: A .dwg circuit drawing is available upon request
Test Fixture Assembly
7
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-003135-030L00
GaN HEMT Pulsed Power Transistor
3.1 - 3.5 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle
Production V1
23 Aug 11
Outline Drawings
CORRECT DEVICE SEQUENCING
TURNING THE DEVICE ON
TURNING THE DEVICE OFF
1. Set VGS to the pinch-off (VP), typically -5V
2. Turn on VDS to nominal voltage (50V)
3. Increase VGS until the IDS current is reached
4. Apply RF power to desired level
1. Turn the RF power off
2. Decrease VGS down to VP
3. Decrease VDS down to 0V
4. Turn off VGS
8
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
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