MAGX-003135-SB3PPR [TE]
GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 180W Peak, 300us Pulse, 10% Duty; 氮化镓HEMT脉冲功率晶体管3.1 - 3.5 GHz频段,峰值180W , 300US脉冲, 10 %占空比型号: | MAGX-003135-SB3PPR |
厂家: | TE CONNECTIVITY |
描述: | GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 180W Peak, 300us Pulse, 10% Duty |
文件: | 总7页 (文件大小:728K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MAGX-003135-180L00
GaN HEMT Pulsed Power Transistor
3.1 - 3.5 GHz, 180W Peak, 300us Pulse, 10% Duty
Preliminary
27 Sept 11
Features
GaN depletion mode HEMT microwave transistor
Common source configuration
Broadband Class AB operation
Thermally enhanced Cu/Mo/Cu package
RoHS Compliant
+50V Typical Operation
MTTF of 114 years (Channel Temperature < 200°C)
EAR99 Export Classification
Application
Civilian and Military Pulsed Radar
Product Description
The MAGX-003135-180L00 is a gold metalized matched Gallium
Nitride (GaN) on Silicon Carbide RF power transistor optimized
for civilian and military radar pulsed applications between 3100 -
3500 MHz. Using state of the art wafer fabrication processes,
these high performance transistors provide high gain, efficiency,
bandwidth, ruggedness over a wide bandwidth for today’s
demanding application needs. The MAGX-003135-180L00 is
constructed using a thermally enhanced Cu/Mo/Cu flanged
ceramic package which provides excellent thermal performance.
High breakdown voltages allow for reliable and stable operation
in extreme mismatched load conditions unparalleled with older
semiconductor technologies.
Typical RF Performance
60V, 300us, 10%
60V, 100us, 10%
Freq.
(MHz)
Gain
(dB)
RL
(dB)
Eff
(%)
Freq.
(MHz)
Pin
(W
Pout
(W Peak)
Gain
(dB)
RL
(dB)
Eff
(%)
Pin
Pout
(W Peak) (W Peak)
3100
3300
3500
14
14
14
200
192
195
11.5
11.4
11.5
-16
-12
-18
41
40
41
3100
3300
3500
14
14
14
217
213
208
11.9
11.8
11.7
-17
-12
-17
43
42
42
Typical RF performance measured in M/A-COM RF test fixture. Devices tested in common source Class-AB configuration as follows:
Vdd=60V, Idq=500mA (pulsed gate bias), F=3.1 - 3.5 GHz, Pulse Width=300us, Duty=10%.
Ordering Information
MAGX-003135-180L00
MAGX-003135-SB3PPR
180W GaN Power Transistor
Evaluation Fixture
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-003135-180L00
GaN HEMT Pulsed Power Transistor
3.1 - 3.5 GHz, 180W Peak, 300us Pulse, 10% Duty
Preliminary
27 Sept 11
Absolute Maximum Ratings Table (1, 2, 3)
Supply Voltage (Vdd)
+65V
Supply Voltage (Vgg)
-8 to 0V
10A
Supply Current (Id1)
Input Power (Pin)
+37 dBm
200 ºC
Absolute Max. Junction/Channel Temp
MTTF (TJ<200°C)
114 years
192 W
Pulsed Power Dissipation (Pavg) at 85 ºC
Thermal Resistance, (Tchannel = 200 ºC)
Pulsed 500uS, 10% Duty cycle
0.6 ºC/W
Operating Temp
-40 to +95C
-65 to +150C
See solder reflow profile
50 V
Storage Temp
Mounting Temperature
ESD Min. - Machine Model (MM)
ESD Min. - Human Body Model (HBM)
MSL Level
>250 V
MSL1
(1) Operation of this device above any one of these parameters may cause permanent damage.
(2) Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as
possible to maximize lifetime.
(3) For saturated performance it recommended that the sum of (3*Vdd + abs(Vgg)) <175
Parameter
Test Conditions
Symbol Min
Typ
Max
Units
DC CHARACTERISTICS
Drain-Source Leakage Current
Gate Threshold Voltage
VGS = -8V, VDS = 175V
IDS
VGS (th)
GM
-
-
-3
-
12
-2
-
mA
V
VDS = 5V, ID = 30mA
VDS = 5V, ID = 3.5mA
-5
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
5.0
S
Not applicable - Input internally matched
VDS = 50V, VGS = -8V, F = 1MHz
VDS = 50V, VGS = -8V, F = 1MHz
CGS
COSS
CRSS
N/A
N/A
26.1
2.3
N/A
30.3
4.7
pF
pF
pF
Output Capacitance
-
-
Reverse Transfer Capacitance
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-003135-180L00
GaN HEMT Pulsed Power Transistor
3.1 - 3.5 GHz, 180W Peak, 300us Pulse, 10% Duty
Preliminary
27 Sept 11
Electrical Specifications: TC = 25 ± 5°C (Room Ambient )
Parameter
Test Conditions
Symbol Min
Typ
Max
Units
RF FUNCTIONAL TESTS (VDD = 60V, IDQ = 250mA, 300us pulse / 10% duty, 3.1 - 3.5 GHz)
Output Power
Pin = 14W Peak, 1.4W Ave
POUT
180
194
-
W Peak
Power Gain
Pout = 180W Peak, 18W Ave
Pin = 14W Peak, 1.4W Ave
GP
10.5
38
11.4
41
-
-
dB
%
Drain Efficiency
ηD
Load Mismatch Stability
Load Mismatch Tolerance
Pin = 14W Peak, 1.4W Ave
Pin = 14W Peak, 1.4W Ave
VSWR-S
VSWR-T
5:1
-
-
-
-
10:1
Test Fixture Impedance
Zif
F (MHz)
ZIF (Ω)
ZOF (Ω)
INPUT
NETWORK
OUTPUT
NETWORK
3100
3300
3500
3.0 - j5.5
2.9 - j5.0
2.4 - j4.8
2.5 - j3.0
2.3 - j3.1
1.4 - j2.8
Zof
3
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-003135-180L00
GaN HEMT Pulsed Power Transistor
3.1 - 3.5 GHz, 180W Peak, 300us Pulse, 10% Duty
Preliminary
27 Sept 11
Peak Output Power vs. Input Power
60V, Idq=0.25A, 300us/10%
250.0
200.0
150.0
100.0
50.0
3.1GHz
3.3GHz
3.5GHz
0.0
2.0
6.0
10.0
14.0
18.0
Pin(Wpk)
Efficiency vs. Peak Output Power
60V,Idq=0.25A,300us/10%
60.0
50.0
40.0
30.0
20.0
10.0
0.0
3.1GHz
3.3GHz
3.5GHz
50.0
100.0
150.0
200.0
250.0
Pout(Wpk)
4
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-003135-180L00
GaN HEMT Pulsed Power Transistor
3.1 - 3.5 GHz, 180W Peak, 300us Pulse, 10% Duty
Preliminary
27 Sept 11
Gain vs. Frequency
60V,Idq=0.25A,300us/10%
16.0
14.0
12.0
10.0
8.0
3
3.1
3.2
3.3
3.4
3.5
3.6
Freq (GHz)
Return Loss vs. Frequency
60V,Idq=0.25A,300us/10%
0.0
-5.0
-10.0
-15.0
-20.0
-25.0
3
3.1
3.2
3.3
3.4
3.5
3.6
Freq (GHz)
5
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-003135-180L00
GaN HEMT Pulsed Power Transistor
3.1 - 3.5 GHz, 180W Peak, 300us Pulse, 10% Duty
Preliminary
27 Sept 11
Test Fixture Assembly
6
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-003135-180L00
GaN HEMT Pulsed Power Transistor
3.1 - 3.5 GHz, 180W Peak, 300us Pulse, 10% Duty
Preliminary
27 Sept 11
Outline Drawing
CORRECT DEVICE SEQUENCING
TURNING THE DEVICE ON
TURNING THE DEVICE OFF
1. Set VGS to the pinch-off (VP), typically -5V
2. Turn on VDS to nominal voltage (60V)
3. Increase VGS until the IDS current is reached
4. Apply RF power to desired level
1. Turn the RF power off
2. Decrease VGS down to VP
3. Decrease VDS down to 0V
4. Turn off VGS
7
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
相关型号:
MAGX-003135-SB5PPR
GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty
TE
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