MAGX-002731-030L00 [TE]

GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle; 氮化镓HEMT脉冲功率晶体管2.7 - 3.1 GHz的峰值30W ， 500US脉冲，占空比为10％


型号：	MAGX-002731-030L00
厂家：	TE CONNECTIVITY
描述：	GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle 氮化镓HEMT脉冲功率晶体管2.7 - 3.1 GHz的峰值30W ， 500US脉冲，占空比为10％晶体晶体管脉冲
文件：	总7页 (文件大小：310K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MAGX-002731-030L00

GaN HEMT Pulsed Power Transistor

2.7 - 3.1 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle

Production V1

23 Aug 11

Features

 GaN depletion mode HEMT microwave transistor

 Common source configuration

 Broadband Class AB operation

 Thermally enhanced Cu/Mo/Cu package

 RoHS Compliant

 +50V Typical Operation

 MTTF of 114 years (Channel Temperature < 200°C)

Application

 Civilian and Military Pulsed Radar

Product Description

The MAGX-002731-030L00 is a gold metalized matched

Gallium Nitride (GaN) on Silicon Carbide RF power transistor

optimized for civilian and military radar pulsed applications

between 2700 - 3100 MHz. Using state of the art wafer

fabrication processes, these high performance transistors

provide high gain, efficiency, bandwidth, ruggedness over a

wide bandwidth for today’s demanding application needs. The

MAGX-002731-030L00 is constructed using a thermally

enhanced Cu/Mo/Cu flanged ceramic package which provides

excellent thermal performance. High breakdown voltages allow

for reliable and stable operation in extreme mismatched load

conditions unparalleled with older semiconductor technologies.

Typical RF Performance

Pin Pout

Freq

(MHz)

Gain Id-Pk Eff

(dB) (A)

(%)

Peak) Peak)

2700

2900

3100

11.8

11.6

11.2

1.7

1.6

1.5

Typical RF performance measured in M/A-COM RF test fixture.

Devices tested in common source Class-AB configuration as

follows: Vdd=50V, Idq=250mA (pulsed), F=2.7—3.1 GHz,

Pulse=500us, Duty=10%.

Ordering Information

MAGX-002731-030L00

MAGX-002731-SB1PPR

30W GaN Power Transistor

Evaluation Fixture

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology

Solutions is considering for development. Performance is based on target specifications, simu-

lated results, and/or prototype measurements. Commitment to develop is not guaranteed.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macomtech.com for additional data sheets and product information.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-

able. Commitment to produce in volume is not guaranteed.

M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the

product(s) or information contained herein without notice.

MAGX-002731-030L00

GaN HEMT Pulsed Power Transistor

2.7 - 3.1 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle

Production V1

23 Aug 11

Absolute Maximum Ratings Table (1, 2, 3)

Supply Voltage (Vdd)

+65V

Supply Voltage (Vgg)

-8 to 0V

3000 mA

+30 dBm

200 ºC

Supply Current (Id1)

Input Power (Pin)

Absolute Max. Junction/Channel Temp

Continuous Power Dissipation (Pdiss) at 85 ºC

Pulsed Power Dissipation (Pavg) at 85 ºC

27 W

65 W

MTTF (T_J<200°C)

114 years

Thermal Resistance, (Tchannel = 200 ºC)

Pulsed 500uS, 10% Duty cycle

1.8 ºC/W

Operating Temp

-40 to +95C

-65 to +150C

See solder reflow profile

50 V

Storage Temp

Mounting Temperature

ESD Min. - Machine Model (MM)

ESD Min. - Human Body Model (HBM)

MSL Level

>250 V

MSL1

(1) Operation of this device above any one of these parameters may cause permanent damage.

(2) Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as

possible to maximize lifetime.

(3) For saturated performance it recommended that the sum of (3*Vdd + abs(Vgg)) <175

Parameter

Test Conditions

Symbol Min

Typ

Max

Units

DC CHARACTERISTICS

Drain-Source Leakage Current

Gate Threshold Voltage

V_GS= -8V, V_DS= 175V

I_DS

V_{GS (th)}

G_M

-3

2.5

-2

_DS= 5V, I_D= 6mA

_DS= 5V, I_D= 1.5mA

-5

Forward Transconductance

1.0

DYNAMIC CHARACTERISTICS

Input Capacitance

V_DS= 0v, V_GS= -8V, F = 1MHz

V_DS= 50V, V_GS= -8V, F = 1MHz

C_ISS

C_OSS

C_RSS

13.2

5.6

Output Capacitance

Reverse Transfer Capacitance

V_DS= 50V, V_GS= -8V, F = 1MHz

0.5

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology

Solutions is considering for development. Performance is based on target specifications, simu-

lated results, and/or prototype measurements. Commitment to develop is not guaranteed.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macomtech.com for additional data sheets and product information.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-

able. Commitment to produce in volume is not guaranteed.

M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the

product(s) or information contained herein without notice.

MAGX-002731-030L00

GaN HEMT Pulsed Power Transistor

2.7 - 3.1 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle

Production V1

23 Aug 11

Electrical Specifications: T_C= 25 ± 5°C (Room Ambient )

Parameter

Test Conditions

Symbol Min Typ

Max

Units

Output Power

Pin = 3W Peak

P_OUT

W Peak

W Ave

Power Gain

Pin = 3W Peak

G_P

11.4

Drain Efficiency

η_D

Load Mismatch Stability

Load Mismatch Tolerance

VSWR-S 5:1

VSWR-T 10:1

Test Fixture Impedance

F (MHz)

Z_IF(Ω)

Z_OF(Ω)

2700

2900

3100

9.2 - j10.7

7.7 - j7.3

8.3 - j8.4

4.21 - j0.06

5.58 + j0.07

4.82 - j0.8

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology

Solutions is considering for development. Performance is based on target specifications, simu-

lated results, and/or prototype measurements. Commitment to develop is not guaranteed.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macomtech.com for additional data sheets and product information.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-

able. Commitment to produce in volume is not guaranteed.

M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the

product(s) or information contained herein without notice.

MAGX-002731-030L00

GaN HEMT Pulsed Power Transistor

2.7 - 3.1 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle

Production V1

23 Aug 11

RF Power Transfer Curve at 50V Drain Bias, Idq=0.25A

Output Power vs. Input Power

Gain vs. Frequency

50V Drain Bias, Idq=0.25A

Return Loss vs. Frequency

50V Drain Bias, Idq=0.25A

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology

Solutions is considering for development. Performance is based on target specifications, simu-

lated results, and/or prototype measurements. Commitment to develop is not guaranteed.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macomtech.com for additional data sheets and product information.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-

able. Commitment to produce in volume is not guaranteed.

M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the

product(s) or information contained herein without notice.

MAGX-002731-030L00

GaN HEMT Pulsed Power Transistor

2.7 - 3.1 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle

Production V1

23 Aug 11

RF Power Transfer Curve at 65V Drain Bias, Idq=0.25A

Output Power vs. Input Power

RF Power Transfer Curve at 65V Drain Bias, Idq=0.25A

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology

Solutions is considering for development. Performance is based on target specifications, simu-

lated results, and/or prototype measurements. Commitment to develop is not guaranteed.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macomtech.com for additional data sheets and product information.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-

able. Commitment to produce in volume is not guaranteed.

M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the

product(s) or information contained herein without notice.

MAGX-002731-030L00

GaN HEMT Pulsed Power Transistor

2.7 - 3.1 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle

Production V1

23 Aug 11

Test Fixture Circuit Dimensions

Note: A dwg circuit drawing is available upon request

Test Fixture Assembly

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology

Solutions is considering for development. Performance is based on target specifications, simu-

lated results, and/or prototype measurements. Commitment to develop is not guaranteed.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macomtech.com for additional data sheets and product information.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-

able. Commitment to produce in volume is not guaranteed.

M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the

product(s) or information contained herein without notice.

MAGX-002731-030L00

GaN HEMT Pulsed Power Transistor

2.7 - 3.1 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle

Production V1

23 Aug 11

Outline Drawings

CORRECT DEVICE SEQUENCING

TURNING THE DEVICE ON

TURNING THE DEVICE OFF

1. Set V_GSto the pinch-off (V_P), typically -5V

2. Turn on V_DSto nominal voltage (50V)

3. Increase V_GSuntil the I_DScurrent is reached

4. Apply RF power to desired level

1. Turn the RF power off

2. Decrease V_GSdown to V_P

3. Decrease V_DSdown to 0V

4. Turn off V_GS

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology

Solutions is considering for development. Performance is based on target specifications, simu-

lated results, and/or prototype measurements. Commitment to develop is not guaranteed.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macomtech.com for additional data sheets and product information.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-

able. Commitment to produce in volume is not guaranteed.

M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the

product(s) or information contained herein without notice.

MAGX-002731-030L00 [TE]

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