MAGX-001214-250L00 [TE]
GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 1200-1400 MHz, 300μs Pulse, 10% Duty; 氮化镓HEMT的SiC脉冲功率晶体管250W峰值， 1400至00年兆赫， 300μs脉冲， 10 ％占空比
| 型号： | MAGX-001214-250L00 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 1200-1400 MHz, 300μs Pulse, 10% Duty |
| 文件： | 总6页 (文件大小：782K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MAGX-001214-250L00
GaN on SiC HEMT Pulsed Power Transistor
250W Peak, 1200-1400 MHz, 300µs Pulse, 10% Duty
Production V1
18 Aug 11
Features
GaN depletion mode HEMT microwave transistor
Internally matched
Common source configuration
Broadband Class AB operation
RoHS Compliant
+50V Typical Operation
MTTF of 114 years (Channel Temperature < 200°C)
Applications
L-Band pulsed radar
Product Description
The MAGX-001214-250L00 is a gold metalized
matched Gallium Nitride (GaN) on Silicon Carbide RF
power transistor optimized for pulsed L-Band radar
applications. Using state of the art wafer fabrication
processes, these high performance transistors provide
high gain, efficiency, bandwidth, ruggedness over a
wide bandwidth for today’s demanding application
needs. High breakdown voltages allow for reliable and
stable operation in extreme mismatched load conditions
unparalleled with older semiconductor technologies.
Typical RF Performance at Pout = 250W Peak
Freq
(MHz)
1200
1250
1300
1350
1400
Pin
(W)
4.4
4.0
4.1
4.4
4.4
Gain
(dB)
17.6
18.0
17.8
17.5
17.6
Slope
Id
Eff
Avg-Eff
RL
Droop
(dB)
0.4
(dB)
(A)
8.0
8.2
8.7
9.1
9.0
(%)
(%)
(dB)
-13.3
-19.2
-22.6
-19.2
-19.8
-
62.2
60.4
57.1
54.6
55.0
-
-
-
-
0.5
-
-
0.6
-
0.7
0.5
57.9
0.6
Ordering Information
MAGX-001214-250L00 250W GaN Power Transistor
MAGX-001214-SB1PPR Evaluation Fixture
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-001214-250L00
GaN on SiC HEMT Pulsed Power Transistor
250W Peak, 1200-1400 MHz, 300µs Pulse, 10% Duty
Production V1
18 Aug 11
Absolute Maximum Ratings Table (1, 2, 3)
Supply Voltage (VDD)
+65V
Supply Voltage (VGS)
-8 to -2V
8.8 Apk
Supply Current (IDMAX
)
Input Power (PIN)
+40 dBm
200 ºC
Absolute Max. Junction/Channel Temp
MTTF (TJ<200°C)
114 years
192 Wpk
Pulsed Power Dissipation at 85ºC
Thermal Resistance, (Tj = 70 ºC)
VDD = 50V, IDQ = 250mA, Pout = 250W
300us Pulse / 10% Duty
0.60ºC/W
Operating Temp
-40 to +95ºC
-65 to +150ºC
See solder reflow profile
50V
Storage Temp
Mounting Temperature
ESD Min. - Machine Model (MM)
ESD Min. - Human Body Model (HBM)
MSL Level
>250V
MSL1
(1) Operation of this device above any one of these parameters may cause permanent damage.
(2) Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as
possible to maximize lifetime.
(3) For saturated performance it recommended that the sum of (3*Vdd + abs(Vgg)) <175
Parameter
Test Conditions
Symbol Min
Typ
Max
Units
DC CHARACTERISTICS
Drain-Source Leakage Current
VGS = -8V, VDS = 175V
IDS
-
0.4
12
mA
Gate Threshold Voltage
VDS = 5V, ID = 30mA
VDS = 5V, ID = 7.0mA
VGS (th)
GM
-5
-3.1
7.7
-2
-
V
S
Forward Transconductance
5.0
DYNAMIC CHARACTERISTICS
Input Capacitance
Not applicable—Input internally matched
CISS
COSS
CRSS
N/A
N/A
22
N/A
pF
pF
pF
Output Capacitance
Feedback Capacitance
VDS = 50V, VGS = -8V, F = 1MHz
VDS = 50V, VGS = -8V, F = 1MHz
-
-
-
-
2.2
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-001214-250L00
GaN on SiC HEMT Pulsed Power Transistor
250W Peak, 1200-1400 MHz, 300µs Pulse, 10% Duty
Production V1
18 Aug 11
Electrical Specifications: TC = 25 ± 5°C (Room Ambient )
Parameter
Test Conditions
Symbol Min
Typ
Max
Units
RF FUNCTIONAL TESTS (VDD = 50V, IDQ = 250mA, 300us / 10% duty, 1200-1400MHz)
Input Power
Power Gain
Pout = 250W Peak (25W avg)
Pout = 250W Peak (25W avg)
PIN
GP
-
4.2
5.6
-
Wpk
dB
16.5
17.7
Drain Efficiency
Pout = 250W Peak (25W avg)
Pout = 250W Peak (25W avg)
Pout = 250W Peak (25W avg)
ηD
50
5:1
57.9
-
-
-
%
-
Load Mismatch Stability
Load Mismatch Tolerance
VSWR-S
VSWR-T
-
-
10:1
-
Test Fixture Impedance
Zif
INPUT
NETWORK
OUTPUT
NETWORK
F (MHz)
ZIF (Ω)
ZOF (Ω)
3.6 - j5.3
3.3 - j4.9
3.2 - j4.4
3.2 - j4.0
3.2 - j3.6
3.5 + j0.7
3.7 + j0.2
3.5 - j0.3
3.2 - j0.6
2.7 - j0.7
1200
1250
1300
1350
1400
Zof
3
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-001214-250L00
GaN on SiC HEMT Pulsed Power Transistor
250W Peak, 1200-1400 MHz, 300µs Pulse, 10% Duty
Production V1
18 Aug 11
RF Power Transfer Curve (Output Power Vs. Input Power)
300
250
200
150
100
50
1200 MHz
1300 MHz
1400 MHz
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Pin (W)
RF Power Transfer Curve (Drain Efficiency Vs. Output Power)
70
65
60
55
50
45
40
35
1200 MHz
1300 MHz
1400 MHz
100
125
150
175
200
225
250
275
300
Pout (W)
4
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-001214-250L00
GaN on SiC HEMT Pulsed Power Transistor
250W Peak, 1200-1400 MHz, 300µs Pulse, 10% Duty
Production V1
18 Aug 11
Test Fixture Circuit Dimensions
Test Fixture Assembly
5
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MAGX-001214-250L00
GaN on SiC HEMT Pulsed Power Transistor
250W Peak, 1200-1400 MHz, 300µs Pulse, 10% Duty
Production V1
18 Aug 11
Outline Drawing
CORRECT DEVICE SEQUENCING
TURNING THE DEVICE ON
TURNING THE DEVICE OFF
1. Set VGS to the pinch-off (VP), typically -5V
2. Turn on VDS to nominal voltage (50V)
3. Increase VGS until the IDS current is reached
4. Apply RF power to desired level
1. Turn the RF power off
2. Decrease VGS down to VP
3. Decrease VDS down to 0V
4. Turn off VGS
6
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
相关型号：
MAGX-001214-SB0PPR
GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 1200-1400 MHz, 300μs Pulse, 10% Duty
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MAGX-001214-SB1PPR
GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 1200-1400 MHz, 300μs Pulse, 10% Duty
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