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MAGX-001214-500L00-V2 [TE]

GaN on SiC HEMT Pulsed Power Transistor;
MAGX-001214-500L00-V2
型号： MAGX-001214-500L00-V2
厂家： TE CONNECTIVITY    TE CONNECTIVITY
描述：

GaN on SiC HEMT Pulsed Power Transistor
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MAGX-001214-500L00  
MAGX-001214-500L0S  
GaN on SiC HEMT Pulsed Power Transistor  
500 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty  
Rev. V2  
Features  
MAGX-001214-500L00  
GaN on SiC D-Mode Transistor Technology  
Internally Matched  
Common-Source Configuration  
Broadband Class AB Operation  
RoHS* Compliant and 260°C Reflow Compatible  
+50 V Typical Operation  
MTTF = 600 years (TJ < 200°C)  
Applications  
L-Band pulsed radar  
Description  
The MAGX-001214-500L00 is a gold-metalized  
matched Gallium Nitride (GaN) on Silicon Carbide  
(SiC) RF power transistor optimized for pulsed  
L-Band radar applications. Using state of the art  
wafer fabrication processes, these high performance  
transistors provide high gain, efficiency, bandwidth,  
and ruggedness over a wide bandwidth for today’s  
demanding application needs. High breakdown  
voltages allow for reliable and stable operation under  
more extreme mismatch load conditions compared  
with older semiconductor technologies.  
MAGX-001214-500L0S  
Ordering Information  
Part Number  
Description  
MAGX-001214-500L00  
MAGX-001214-500L0S  
Flanged  
Flangeless  
1.2 - 1.4 GHz  
Evaluation Board  
MAGX-001214-SB3PPR  
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.  
1
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
Visit www.macomtech.com for additional data sheets and product information.  
• North America Tel: 800.366.2266 / Fax: 978.366.2266  
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
MAGX-001214-500L00  
MAGX-001214-500L0S  
GaN on SiC HEMT Pulsed Power Transistor  
500 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty  
Rev. V2  
Typical RF Performance under standard operating conditions, POUT = 500 W (Peak)  
Freq.  
(MHz)  
PIN  
(W)  
Gain  
(dB)  
ID  
(A)  
Eff.  
(%)  
RL  
(dB)  
Droop  
(dB)  
+1dB OD  
(W)  
568  
561  
554  
547  
549  
1200  
1250  
1300  
1350  
1400  
5.15  
5.35  
5.69  
5.86  
5.85  
19.86  
19.69  
19.43  
19.31  
19.22  
17.7  
16.7  
17.2  
17.9  
18.1  
56.2  
59.5  
57.9  
55.7  
54.8  
-12.7  
-10.3  
-10.9  
-15.3  
-17.5  
0.29  
0.30  
0.33  
0.36  
0.38  
Electrical Specifications: Freq. = 1200 - 1400 MHz, IDQ = 400 mA, TA = 25°C  
Parameter  
Test Conditions  
Symbol  
Min.  
Typ.  
Max.  
Units  
RF Functional Tests: VDD = 50 V; 300 µs / 10%  
Input Power  
Power Gain  
POUT= 500 W Peak (50 W avg.)  
PIN  
GP  
-
6
8.9  
Wpk  
dB  
%
POUT= 500 W Peak (50 W avg.)  
POUT= 500 W Peak (50 W avg.)  
POUT= 500 W Peak (50 W avg.)  
POUT= 500 W Peak (50 W avg.)  
POUT= 500 W Peak (50 W avg.)  
17.5  
19.2  
56  
-
Drain Efficiency  
ηD  
50  
-
-
0.7  
-
Pulse Droop  
Droop  
VSWR-S  
VSWR-T  
0.4  
3:1  
5:1  
dB  
-
Load Mismatch Stability  
Load Mismatch Tolerance  
-
-
-
-
Extended Pulse Width Conditions: VDD = 42 V; 1.0 ms / 10%; (typical RF data)  
Input Power  
Power Gain  
POUT= 375 W Peak (37.5 W avg.)  
POUT= 375 W Peak (37.5 W avg.)  
POUT= 375 W Peak (37.5 W avg.)  
PIN  
GP  
ηD  
-
-
-
5.3  
18.5  
55  
-
-
-
Wpk  
dB  
Drain Efficiency  
%
Electrical Characteristics: TA = 25°C  
Parameter  
DC Characteristics:  
Test Conditions  
Symbol  
Min.  
Typ.  
Max.  
Units  
Drain-Source Leakage Current  
Gate Threshold Voltage  
Forward Transconductance  
VGS = -8 V, VDS = 175 V  
VDS = 5 V, ID = 75 mA  
VDS = 5 V, ID = 17.5 mA  
IDS  
VGS (TH)  
GM  
-
1.0  
-3.1  
19.2  
30  
-2  
-
mA  
V
-5  
12.5  
S
Dynamic Characteristics:  
Input Capacitance  
Output Capacitance  
Not applicable - Input matched  
VDS = 50 V, VGS = -8 V, F = 1 MHz  
VDS = 50 V, VGS = -8 V, F = 1 MHz  
CISS  
COSS  
CRSS  
N/A  
N/A  
55  
N/A  
pF  
pF  
pF  
-
-
-
-
Reverse Transfer Capacitance  
5.5  
2
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
Visit www.macomtech.com for additional data sheets and product information.  
• North America Tel: 800.366.2266 / Fax: 978.366.2266  
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
MAGX-001214-500L00  
MAGX-001214-500L0S  
GaN on SiC HEMT Pulsed Power Transistor  
500 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty  
Rev. V2  
Absolute Maximum Ratings1,2,3,4  
Parameter  
Limit  
+65 V  
Supply Voltage (VDD  
)
)
Supply Voltage (VGS  
-8 to -2 V  
21.5 A  
Supply Current (IDMAX  
)
Input Power (PIN)  
PIN (nominal) + 3 dB  
200ºC  
Absolute Max. Junction/Channel Temp  
Pulsed Power Dissipation at 85 ºC  
583 W  
Thermal Resistance, (TJ= 70 ºC)  
VDD = 50 V, IDQ = 400 mA, Pout = 500 W, 300 µs Pulse / 10% Duty  
0.30 ºC/W  
Operating Temp  
Storage Temp  
-40 to +95ºC  
-65 to +150ºC  
See solder reflow profile  
1300 V  
Mounting Temperature  
ESD Min. - Charged Device Model (CDM)  
ESD Min. - Human Body Model (HBM)  
4000 V  
1. Operation of this device above any one of these parameters may cause permanent damage.  
2. Input Power Limit is +3 dB over nominal drive required to achieve POUT = 500 W.  
3. Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime.  
4. For saturated performance it recommended that the sum of (3*VDD + abs(VGG)) <175 V.  
Correct Device Sequencing  
Test Fixture Impedances  
F (MHz)  
ZIF (Ω)  
ZOF (Ω)  
Turning the device ON  
1. Set VGS to the pinch-off (VP), typically -5 V.  
2. Turn on VDS to nominal voltage (50 V).  
3. Increase VGS until the IDS current is reached.  
4. Apply RF power to desired level.  
1200  
1250  
1300  
1350  
1400  
1.2 - j1.2  
1.2 - j0.9  
1.3 - j0.6  
1.4 - j0.3  
1.6 + j0.0  
1.8 + j0.5  
1.9 + j0.4  
2.0 + j0.3  
1.9 + j0.2  
1.7 + j0.1  
Turning the device OFF  
1. Turn the RF power off.  
2. Decrease VGS down to VP.  
3. Decrease VDS down to 0 V.  
4. Turn off VGS  
Zif  
INPUT  
OUTPUT  
NETWORK  
NETWORK  
Zof  
3
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
Visit www.macomtech.com for additional data sheets and product information.  
• North America Tel: 800.366.2266 / Fax: 978.366.2266  
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
MAGX-001214-500L00  
MAGX-001214-500L0S  
GaN on SiC HEMT Pulsed Power Transistor  
500 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty  
Rev. V2  
Test Fixture Circuit Dimensions  
Test Fixture Assembly  
Contact factory for gerber file or additional circuit information.  
4
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
Visit www.macomtech.com for additional data sheets and product information.  
• North America Tel: 800.366.2266 / Fax: 978.366.2266  
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
MAGX-001214-500L00  
MAGX-001214-500L0S  
GaN on SiC HEMT Pulsed Power Transistor  
500 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty  
Rev. V2  
RF Power Transfer Curve (Output Power Vs. Input Power)  
700  
600  
500  
400  
300  
200  
100  
1200 MHz  
1300 MHz  
1400 MHz  
1
2
3
4
5
6
7
8
9
10  
PIN (W)  
RF Power Transfer Curve (Drain Efficiency Vs. Output Power)  
70  
60  
50  
40  
30  
1200 MHz  
1300 MHz  
1400 MHz  
100  
200  
300  
400  
500  
600  
700  
POUT (W)  
5
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
Visit www.macomtech.com for additional data sheets and product information.  
• North America Tel: 800.366.2266 / Fax: 978.366.2266  
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
MAGX-001214-500L00  
MAGX-001214-500L0S  
GaN on SiC HEMT Pulsed Power Transistor  
500 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty  
Rev. V2  
Typical RF Data with ‘extended pulse’ conditions5:  
1.0 ms Pulse, 10% Duty, VDD = 42 V, IDQ = 400 mA  
525  
450  
375  
300  
225  
150  
1200 MHz  
1300 MHz  
1400 MHz  
1
2
3
4
5
6
7
8
9
PIN (W)  
5. Drain Voltage and RF output power is de-rated to keep junction temperature within acceptable levels.  
6
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
Visit www.macomtech.com for additional data sheets and product information.  
• North America Tel: 800.366.2266 / Fax: 978.366.2266  
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
MAGX-001214-500L00  
MAGX-001214-500L0S  
GaN on SiC HEMT Pulsed Power Transistor  
500 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty  
Rev. V2  
Outline Drawing MAGX-002114-500L00  
M/A-COM  
GX1214-500L  
LOT NO. / SER NO.  
7
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
Visit www.macomtech.com for additional data sheets and product information.  
• North America Tel: 800.366.2266 / Fax: 978.366.2266  
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
MAGX-001214-500L00  
MAGX-001214-500L0S  
GaN on SiC HEMT Pulsed Power Transistor  
500 W Peak, 1200-1400 MHz, 300 μs Pulse, 10% Duty  
Rev. V2  
Outline Drawing MAGX-002114-500L0S  
M/A-COM  
GX1214-500LS  
LOT NO. / SER NO.  
8
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
Visit www.macomtech.com for additional data sheets and product information.  
• North America Tel: 800.366.2266 / Fax: 978.366.2266  
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  

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