MAGX-001214-500L0S [TE]
GaN on SiC Depletion-Mode Transistor Technology Internally Matched; 氮化镓对SiC耗尽型晶体管技术内部匹配
| 型号： | MAGX-001214-500L0S |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | GaN on SiC Depletion-Mode Transistor Technology Internally Matched |
| 文件： | 总8页 (文件大小：213K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MAGX-001214-500L00
MAGX-001214-500L0S
GaN on SiC HEMT Pulsed Power Transistor
500W Peak, 1200-1400 MHz, 300 µs Pulse, 10% Duty
Rev. V1
Features
GaN on SiC Depletion-Mode Transistor Technology
Internally Matched
Common-Source Configuration
Broadband Class AB Operation
RoHS* Compliant and 260 °C Reflow Compatible
+50 V Typical Operation
MTTF of 5.3 * 106 hours
Applications
L-Band pulsed radar
MAGX-001214-500L00
Description
The MAGX-001214-500L00 is a gold metalized matched
Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power
transistor optimized for pulsed L-Band radar applications.
Using state of the art wafer fabrication processes, these high
performance transistors provide high gain, efficiency,
bandwidth, and ruggedness over a wide bandwidth for
today’s demanding application needs. High breakdown
voltages allow for reliable and stable operation under more
extreme mismatch load conditions compared with older
semiconductor technologies.
MAGX-001214-500L0S
Typical RF Performance under standard operating conditions, POUT = 500W (Peak)
Freq.
(MHz)
PIN
(W)
Gain
(dB)
ID
(A)
Eff.
(%)
RL
(dB)
Droop
(dB)
+1dB OD
(W)
1200
1250
1300
1350
1400
5.15
5.35
5.69
5.86
5.85
19.86
19.69
19.43
19.31
19.22
17.7
16.7
17.2
17.9
18.1
56.2
59.5
57.9
55.7
54.8
-12.7
-10.3
-10.9
-15.3
-17.5
0.29
0.30
0.33
0.36
0.38
568
561
554
547
549
Ordering Information
Part Number
Description
MAGX-001214-500L00
MAGX-001214-500L0S
MAGX-001214-SB3PPR
500 W GaN Power Transistor (Flanged)
500 W GaN Power Transistor (Flangeless)
1.2 - 1.4 GHz Evaluation Board
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 /
Fax: 978.366.2266
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
• Europe
• Asia/Pacific
MAGX-001214-500L00
MAGX-001214-500L0S
GaN on SiC HEMT Pulsed Power Transistor
500W Peak, 1200-1400 MHz, 300 µs Pulse, 10% Duty
Rev. V1
Absolute Maximum Ratings 1, 2, 3, 4
Parameter
Limit
Supply Voltage (VDD)
Supply Voltage (VGS)
+65 V
-8 to -2 V
Supply Current (IDMAX
)
21.5 A
Input Power (PIN)
PIN (nominal) + 3 dB
200 ºC
Absolute Max. Junction/Channel Temp
MTTF
600 years
583 W
Pulsed Power Dissipation at 85 ºC
Thermal Resistance, (TJ= 70 ºC)
0.30 ºC/W
VDD = 50 V, IDQ = 400 mA, Pout = 500 W, 300 µs Pulse / 10% Duty
Operating Temp
-40 to +95 ºC
-65 to +150 ºC
See solder reflow profile
4000 V
Storage Temp
Mounting Temperature
ESD Min. - Charged Device Model (CDM)
ESD Min. - Human Body Model (HBM)
1300 V
1. Operation of this device above any one of these parameters may cause permanent damage.
2. Input Power Limit is +3dB over nominal drive required to achieve POUT = 500W.
3. Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to
maximize lifetime.
4. For saturated performance it recommended that the sum of (3*VDD + abs(VGG)) <175 V.
DC Characteristics
Parameter
Test Conditions
Symbol Min. Typ.
Max.
30
-2
Units
mA
V
Drain-Source Leakage Current VGS = -8 V, VDS = 175 V
IDS
VGS (TH)
GM
-
1.0
Gate Threshold Voltage
VDS = 5 V, ID = 75 mA
VDS = 5 V, ID = 17.5 mA
-5
-3.1
Forward Transconductance
12.5 19.2
-
S
Dynamic Characteristics
Parameter
Test Conditions
Symbol Min. Typ.
Max.
Units
pF
Input Capacitance
Not applicable - Input matched
VDS = 50 V, VGS = -8 V, F = 1 MHz
VDS = 50 V, VGS = -8 V, F = 1 MHz
CISS
COSS
CRSS
N/A
N/A
55
N/A
Output Capacitance
Feedback Capacitance
-
-
-
-
pF
5.5
pF
2
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 /
Fax: 978.366.2266
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
• Europe
• Asia/Pacific
MAGX-001214-500L00
MAGX-001214-500L0S
GaN on SiC HEMT Pulsed Power Transistor
500W Peak, 1200-1400 MHz, 300 µs Pulse, 10% Duty
Rev. V1
Electrical Specifications: TA = 25 °C
Parameter
Test Conditions
Symbol
Min.
Typ.
Max. Units
RF FUNCTIONAL TESTS (VDD = 50 V; IDQ = 400 mA; 300 µs / 10%; 1200 - 1400 MHz)
Input Power
Power Gain
POUT= 500 W Peak (50 W avg)
PIN
GP
ηD
-
6
8.9
Wpk
dB
POUT= 500 W Peak (50 W avg)
POUT= 500 W Peak (50 W avg)
17.5
50
19.2
56
-
-
Drain Efficiency
%
Pulse Droop
POUT= 500 W Peak (50 W avg)
POUT= 500 W Peak (50 W avg)
POUT= 500 W Peak (50 W avg)
Droop
-
-
-
0.4
3:1
5:1
0.7
dB
Load Mismatch Stability
Load Mismatch Tolerance
VSWR-S
VSWR-T
-
-
-
-
Parameter
Test Conditions
Symbol
Min.
Typ.
Max. Units
EXTENDED PULSE WIDTH CONDITIONS (VDD = 42 V; IDQ = 400 mA; 1.0 ms / 10%; 1200 - 1400 MHz)
TYPICAL RF DATA
Input Power
Power Gain
POUT= 375 W Peak (37.5 W avg)
POUT= 375 W Peak (37.5 W avg)
POUT= 375 W Peak (37.5 W avg)
PIN
GP
ηD
-
-
-
5.3
18.5
55
-
-
-
Wpk
dB
Drain Efficiency
%
Test Fixture Impedances
F (MHz)
ZIF (Ω)
ZOF (Ω)
1200
1250
1300
1350
1400
1.2 - j1.2
1.2 - j0.9
1.3 - j0.6
1.4 - j0.3
1.6 + j0.0
1.8 + j0.5
1.9 + j0.4
2.0 + j0.3
1.9 + j0.2
1.7 + j0.1
3
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 /
Fax: 978.366.2266
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
• Europe
• Asia/Pacific
MAGX-001214-500L00
MAGX-001214-500L0S
GaN on SiC HEMT Pulsed Power Transistor
500W Peak, 1200-1400 MHz, 300 µs Pulse, 10% Duty
Rev. V1
RF Power Transfer Curve (Output Power Vs. Input Power)
700
600
500
400
300
200
100
1200 MHz
1300 MHz
1400 MHz
1
2
3
4
5
6
7
8
9
10
PIN (W)
RF Power Transfer Curve (Drain Efficiency Vs. Output Power)
70
60
50
40
30
1200 MHz
1300 MHz
1400 MHz
100
200
300
400
500
600
700
POUT (W)
4
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 /
Fax: 978.366.2266
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
• Europe
• Asia/Pacific
MAGX-001214-500L00
MAGX-001214-500L0S
GaN on SiC HEMT Pulsed Power Transistor
500W Peak, 1200-1400 MHz, 300 µs Pulse, 10% Duty
Rev. V1
Typical RF Data with ‘extended pulse’ conditions:
1.0 ms Pulse, 10% Duty
DD = 42 V, IDQ = 400 mA
V
525
450
375
300
225
150
1200 MHz
1300 MHz
1400 MHz
1
2
3
4
5
6
7
8
9
PIN (W)
Note that Drain Voltage and RF output power is de-rated to keep junction temperature
within acceptable levels.
5
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 /
Fax: 978.366.2266
• Europe
• Asia/Pacific
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-001214-500L00
MAGX-001214-500L0S
GaN on SiC HEMT Pulsed Power Transistor
500W Peak, 1200-1400 MHz, 300 µs Pulse, 10% Duty
Rev. V1
Test Fixture Circuit Dimensions
Test Fixture Assembly
Contact factory for gerber file or additional circuit information.
6
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 /
Fax: 978.366.2266
• Europe
• Asia/Pacific
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-001214-500L00
MAGX-001214-500L0S
GaN on SiC HEMT Pulsed Power Transistor
500W Peak, 1200-1400 MHz, 300 µs Pulse, 10% Duty
Rev. V1
Outline Drawing MAGX-001214-500L00
M/A-COM
GX1214-500L
LOT NO. / SER NO.
CORRECT DEVICE SEQUENCING
TURNING THE DEVICE ON
TURNING THE DEVICE OFF
1. Set VGS to the pinch-off (VP), typically -5 V
2. Turn on VDS to nominal voltage (50 V)
3. Increase VGS until the IDS current is reached
4. Apply RF power to desired level
1. Turn the RF power off
2. Decrease VGS down to VP
3. Decrease VDS down to 0 V
4. Turn off VGS
7
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 /
Fax: 978.366.2266
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
• Europe
• Asia/Pacific
MAGX-001214-500L00
MAGX-001214-500L0S
GaN on SiC HEMT Pulsed Power Transistor
500W Peak, 1200-1400 MHz, 300 µs Pulse, 10% Duty
Rev. V1
Outline Drawing MAGX-001214-500L0S
M/A-COM
GX1214-500LS
LOT NO. / SER NO.
8
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 /
Fax: 978.366.2266
• Europe
• Asia/Pacific
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
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