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MAGX-001214-125L00 [TE]

GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 1200-1400 MHz, 300μs Pulse, 10% Duty; 氮化镓HEMT的SiC脉冲功率晶体管125W峰值， 1200-1400兆赫， 300μs脉冲， 10 ％占空比
MAGX-001214-125L00
型号： MAGX-001214-125L00
厂家： TE CONNECTIVITY    TE CONNECTIVITY
描述：

GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 1200-1400 MHz, 300μs Pulse, 10% Duty
氮化镓HEMT的SiC脉冲功率晶体管125W峰值， 1200-1400兆赫， 300μs脉冲， 10 ％占空比

晶体 晶体管 脉冲
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MAGX-001214-125L00  
GaN on SiC HEMT Pulsed Power Transistor  
125W Peak, 1200-1400 MHz, 300µs Pulse, 10% Duty  
Production V1  
18 Aug 11  
Features  
GaN depletion mode HEMT microwave transistor  
Internally matched  
Common source configuration  
Broadband Class AB operation  
RoHS Compliant  
+50V Typical Operation  
MTTF of 114 years (Channel Temperature < 200°C)  
Applications  
L-Band Pulsed Radar  
Product Description  
The MAGX-001214-125L00 is a gold metalized matched  
Gallium Nitride (GaN) on Silicon Carbide RF power transistor  
optimized for pulsed L-Band radar applications. Using state  
of the art wafer fabrication processes, these high  
performance transistors provide high gain, efficiency,  
bandwidth, ruggedness over a wide bandwidth for today’s  
demanding application needs. High breakdown voltages  
allow for reliable and stable operation in extreme  
mismatched load conditions unparalleled with older  
semiconductor technologies.  
Typical RF Performance at Pout = 125W Peak  
Freq  
(MHz)  
1200  
1250  
1300  
1350  
1400  
Pin  
(W)  
1.8  
1.9  
2.0  
1.9  
1.8  
Gain  
(dB)  
18.3  
18.1  
18.0  
18.1  
18.4  
Slope  
Id  
Eff  
Avg-Eff  
RL  
Droop  
(dB)  
0.4  
(dB)  
(A)  
4.0  
4.2  
4.4  
4.3  
3.9  
(%)  
(%)  
(dB)  
-9.0  
-
43.0  
59.0  
56.5  
57.7  
62.9  
-
-
-
-
-11.6  
-16.0  
-19.0  
-14.5  
0.6  
-
-
0.6  
-
0.5  
0.4  
59.8  
0.3  
Typical RF performance measured in M/A-COM RF test fixture. Devices tested in common source Class-AB configuration as follows:  
Vdd=50V, Idq=100mA (pulsed), F=1200-1400 MHz, Pulse=300us, Duty=10%.  
Ordering Information  
MAGX-001214-125L00 125W GaN Power Transistor  
MAGX-001214-SB0PPR Evaluation Fixture  
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology  
• North America Tel: 800.366.2266 / Fax: 978.366.2266  
Solutions is considering for development. Performance is based on target specifications, simu-  
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.  
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macomtech.com for additional data sheets and product information.  
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions has under development. Performance is based on engineering tests. Specifications are  
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-  
able. Commitment to produce in volume is not guaranteed.  
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the  
product(s) or information contained herein without notice.  
MAGX-001214-125L00  
GaN on SiC HEMT Pulsed Power Transistor  
125W Peak, 1200-1400 MHz, 300µs Pulse, 10% Duty  
Production V1  
18 Aug 11  
Absolute Maximum Ratings Table (1, 2, 3)  
Supply Voltage (VDD)  
+65V  
Supply Voltage (VGS)  
-8 to -2V  
4.8 Apk  
Supply Current (IDMAX  
)
Input Power (PIN)  
+37 dBm  
200ºC  
Absolute Max. Junction/Channel Temp  
MTTF (TJ<200°C)  
114 years  
115 Wpk  
Pulsed Power Dissipation at 85ºC  
Thermal Resistance, (Tj = 70ºC)  
VDD = 50V, IDQ = 100mA, Pout = 125W  
300us Pulse / 10% Duty  
1.0ºC/W  
Operating Temp  
-40 to +95ºC  
-65 to +150ºC  
See solder reflow profile  
50V  
Storage Temp  
Mounting Temperature  
ESD Min. - Machine Model (MM)  
ESD Min. - Human Body Model (HBM)  
MSL Level  
>250V  
MSL1  
(1) Operation of this device above any one of these parameters may cause permanent damage.  
(2) Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as  
possible to maximize lifetime.  
(3) For saturated performance it recommended that the sum of (3*Vdd + abs(Vgg)) <175  
Parameter  
Test Conditions  
Symbol Min  
Typ  
Max  
Units  
DC CHARACTERISTICS  
Drain-Source Leakage Current  
VGS = -8V, VDS = 175V  
IDS  
-
0.2  
6
mA  
Gate Threshold Voltage  
VDS = 5V, ID = 15.0mA  
VDS = 5V, ID = 3.5mA  
VGS (th)  
GM  
-5  
-3.8  
3.6  
-2  
-
V
S
Forward Transconductance  
2.5  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
Not applicable—Input internally matched  
CiSS  
COSS  
CRSS  
N/A  
N/A  
11  
N/A  
pF  
pF  
pF  
Output Capacitance  
Feedback Capacitance  
VDS = 50V, VGS = -8V, F = 1MHz  
VDS = 50V, VGS = -8V, F = 1MHz  
-
-
-
-
1.1  
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions is considering for development. Performance is based on target specifications, simu-  
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.  
• North America Tel: 800.366.2266 / Fax: 978.366.2266  
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macomtech.com for additional data sheets and product information.  
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions has under development. Performance is based on engineering tests. Specifications are  
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-  
able. Commitment to produce in volume is not guaranteed.  
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the  
product(s) or information contained herein without notice.  
MAGX-001214-125L00  
GaN on SiC HEMT Pulsed Power Transistor  
125W Peak, 1200-1400 MHz, 300µs Pulse, 10% Duty  
Production V1  
18 Aug 11  
Electrical Specifications: TC = 25 ± 5°C (Room Ambient )  
Parameter  
Test Conditions  
Symbol Min  
Typ  
Max  
Units  
RF FUNCTIONAL TESTS (VDD = 50V, IDQ = 100mA, 300us / 10% duty, 1200-1400MHz)  
Input Power  
Power Gain  
Pout = 125Wpk (12.5W avg)  
Pout = 125Wpk (12.5W avg)  
PIN  
GP  
-
1.9  
2.4  
-
Wpk  
dB  
17.2  
18.1  
Drain Efficiency  
Pout = 125Wpk (12.5W avg)  
Pout = 125Wpk (12.5W avg)  
Pout = 125Wpk (12.5W avg)  
ηD  
54  
59.8  
-
-
-
%
-
Load Mismatch Stability  
Load Mismatch Tolerance  
VSWR-S  
5:1  
-
-
VSWR-T 10:1  
-
Test Fixture Impedance  
Zif  
INPUT  
NETWORK  
OUTPUT  
NETWORK  
F (MHz)  
ZIF (Ω)  
ZOF (Ω)  
6.6 - j7.1  
6.6 - j6.9  
6.6 - j6.7  
6.7 - j6.7  
6.7 - j6.7  
8.0 + j1.9  
7.4 + j1.3  
6.6 + j1.3  
6.1 + j1.6  
5.7 + j2.2  
1200  
1250  
1300  
1350  
1400  
Zof  
3
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions is considering for development. Performance is based on target specifications, simu-  
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.  
• North America Tel: 800.366.2266 / Fax: 978.366.2266  
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macomtech.com for additional data sheets and product information.  
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions has under development. Performance is based on engineering tests. Specifications are  
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-  
able. Commitment to produce in volume is not guaranteed.  
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the  
product(s) or information contained herein without notice.  
MAGX-001214-125L00  
GaN on SiC HEMT Pulsed Power Transistor  
125W Peak, 1200-1400 MHz, 300µs Pulse, 10% Duty  
Production V1  
18 Aug 11  
RF Power Transfer Curve (Output Power Vs. Input Power)  
150  
125  
100  
75  
1200 MHz  
1300 MHz  
1400 MHz  
50  
25  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
Pin (W)  
RF Power Transfer Curve (Drain Efficiency Vs. Output Power)  
75  
70  
65  
60  
55  
50  
45  
40  
35  
1200 MHz  
1300 MHz  
1400 MHz  
35  
50  
65  
80  
95  
110  
125  
140  
155  
Pout (W)  
4
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions is considering for development. Performance is based on target specifications, simu-  
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.  
• North America Tel: 800.366.2266 / Fax: 978.366.2266  
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macomtech.com for additional data sheets and product information.  
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions has under development. Performance is based on engineering tests. Specifications are  
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-  
able. Commitment to produce in volume is not guaranteed.  
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the  
product(s) or information contained herein without notice.  
MAGX-001214-125L00  
GaN on SiC HEMT Pulsed Power Transistor  
125W Peak, 1200-1400 MHz, 300µs Pulse, 10% Duty  
Production V1  
18 Aug 11  
Test Fixture Circuit Dimensions  
Test Fixture Assembly  
5
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions is considering for development. Performance is based on target specifications, simu-  
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.  
• North America Tel: 800.366.2266 / Fax: 978.366.2266  
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macomtech.com for additional data sheets and product information.  
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions has under development. Performance is based on engineering tests. Specifications are  
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-  
able. Commitment to produce in volume is not guaranteed.  
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the  
product(s) or information contained herein without notice.  
MAGX-001214-125L00  
GaN on SiC HEMT Pulsed Power Transistor  
125W Peak, 1200-1400 MHz, 300µs Pulse, 10% Duty  
Production V1  
18 Aug 11  
Outline Drawing  
CORRECT DEVICE SEQUENCING  
TURNING THE DEVICE ON  
TURNING THE DEVICE OFF  
1. Set VGS to the pinch-off (VP), typically -5V  
2. Turn on VDS to nominal voltage (50V)  
3. Increase VGS until the IDS current is reached  
4. Apply RF power to desired level  
1. Turn the RF power off  
2. Decrease VGS down to VP  
3. Decrease VDS down to 0V  
4. Turn off VGS  
6
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions is considering for development. Performance is based on target specifications, simu-  
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.  
• North America Tel: 800.366.2266 / Fax: 978.366.2266  
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macomtech.com for additional data sheets and product information.  
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions has under development. Performance is based on engineering tests. Specifications are  
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-  
able. Commitment to produce in volume is not guaranteed.  
M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the  
product(s) or information contained herein without notice.  

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