MAGX-001090-600L0X [TE]
GaN on SiC HEMT Pulsed Power Transistor;型号: | MAGX-001090-600L0X |
厂家: | TE CONNECTIVITY |
描述: | GaN on SiC HEMT Pulsed Power Transistor |
文件: | 总9页 (文件大小:944K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MAGX-001090-600L0x
GaN on SiC HEMT Pulsed Power Transistor
600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty
Rev. V6
MAGX-001090-600L00
Features
GaN on SiC Depletion-Mode Transistor Technology
Internally Matched
Common-Source Configuration
Broadband Class AB Operation
RoHS* Compliant and 260 °C Reflow Compatible
+50 V Typical Operation
MTTF = 600 years (TJ < 200 °C)
Applications
Civilian Air Traffic Control (ATC), L-Band
Secondary Radar for IFF and Mode-S avionics.
MAGX-001090-600L0S
Military Radar for IFF and Data Links.
Description
The MAGX-001090-600L00 and MAGX-001090-600L0S
are gold metalized matched Gallium Nitride (GaN)
on Silicon Carbide (SiC) RF power transistor
optimized for pulsed avionics and radar applications.
Using state of the art wafer fabrication processes,
these high performance transistors provide high
gain, efficiency, bandwidth, and ruggedness over a
wide bandwidth for today’s demanding application
needs. High breakdown voltages allow for reliable
and stable operation under more extreme mismatch
load conditions compared with older semiconductor
technologies.
Ordering Information1
Part Number
Description
Flanged
MAGX-001090-600L00
MAGX-001090-600L0S
Flangeless
1030 - 1090 MHz
Evaluation Board
MAGX-A11090-600L00
1. When ordering the evaluation board, please indicate on sales
order notes if it will be used for:
A. Standard Flange devices
B. Earless Flange devices
Typical RF Performance under Standard Operating Conditions, POUT = 600 W (Peak)
VSWR-S
(3:1)
VSWR-T
(5:1)
Freq
(MHz)
PIN
(W)
Gain
(dB)
ID
(A)
Eff.
(%)
RL
(dB)
Droop
(dB)
+1dB OD
(W)
1030
1090
4.95
4.50
20.8
21.3
20.4
18.6
58.6
64.4
-16.8
-11.0
0.24
0.23
649
661
S
S
P
P
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAGX-001090-600L0x
GaN on SiC HEMT Pulsed Power Transistor
600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty
Rev. V6
Electrical Specifications: Freq. = 1030 - 1090 MHz, TA = 25 °C
Parameter
RF Functional Tests
Peak Input Power
Power Gain
Test Conditions
Symbol
Min.
Typ.
Max.
Units
PIN
GP
-
4.3
21.4
63
6.7
W
dB
%
dB
-
19.5
-
VDD = 50 V, IDQ = 600 mA,
Pulse Width = 32 μs, Duty Cycle = 2%,
POUT = 600 W Peak (12 W avg.)
Drain Efficiency
ηD
55
-
-
0.3
-
Pulse Droop
Droop
VSWR-S
VSWR-T
0.2
3:1
5:1
Load Mismatch Stability
Load Mismatch Tolerance
-
-
-
-
Mode-S ELM Pulse Width Conditions2
VDD = 50 V, IDQ = 400 mA,
48 pulses of 32 µs on and 18 µs off,
repeat every 24 ms,
Overall Duty Factor = 6.4%,
POUT = 550 W Peak (35.2 W avg.)
Peak Input Power
Power Gain
PIN
GP
ηD
-
-
-
4.6
20.7
61
-
-
-
W
dB
%
Drain Efficiency
2. For Mode-S ELM pulse conditions power measurements are obtained as follows:
RF input / output power is measured at the middle of the 25th pulse in the burst (t = 1.216 ms);
Droop measurements are defined as the drop in power from the 5th pulse (t = 216us) and 43rd pulse (t = 2.116ms) in the burst.
Electrical Characteristics: TA = 25 °C
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Units
DC Characteristics
Drain-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Dynamic Characteristics
Input Capacitance
VGS = -8 V, VDS = 175 V
VDS = 5 V, ID = 75 mA
VDS = 5 V, ID = 17.5 mA
IDS
VGS (TH)
GM
-
1.0
-3.1
19.2
30
-2
-
mA
V
-5
12.5
S
Not applicable - Input matched
CISS
COSS
CRSS
N/A
N/A
55
N/A
pF
pF
pF
Output Capacitance
-
-
-
-
VDS = 50 V, VGS = -8 V,
Freq. = 1 MHz
Reverse Transfer Capacitance
5.5
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAGX-001090-600L0x
GaN on SiC HEMT Pulsed Power Transistor
600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty
Rev. V6
Absolute Maximum Ratings3,4,5
Parameter
Limit
+65 V
Drain Voltage (VDD
Gate Voltage (VGG
Drain Current (IDD
)
)
-8 to -2 V
80 A
)
Input Power6 (PIN)
Operating Junction Temperature7
PIN (nominal) + 3 dB
250 ºC
Peak Pulsed Power Dissipation at 85 ºC
Operating Temperature Range
3.5 kW
-40 to +95 ºC
-65 to +150 ºC
1300 V
Storage Temperature Range
ESD Maximum - Charged Device Model (CDM)
ESD Maximum - Human Body Model (HBM)
4000 V
3. Exceeding any one or combination of these limits may cause permanent damage to this device.
4. MACOM does not recommend sustained operation near these survivability limits.
5. For saturated performance it is recommended that the sum of ( 3 * VDD + | VGG | ) < 175 V.
6. Input Power Limit is +3 dB over nominal drive required to achieve POUT = 600 W.
7. Operating junction temperature is measured with infrared (IR) microscope. Junction temperature directly affects a device's MTTF and
should be kept as low as possible to maximize lifetime.
MTTF = 5.3 x 106 hours (TJ < 200 °C)
MTTF = 6.8 x 104 hours (TJ < 250 °C)
Thermal Characteristics
Parameter
Test Conditions
Symbol
Typical
Units
TC = 70 ºC, VDD = 50 V, IDQ = 600 mA, POUT = 600 W,
Thermal Resistance
ΘJC
0.05
°C/W
Pulse Width = 32 µs, Duty Cycle = 2%
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAGX-001090-600L0x
GaN on SiC HEMT Pulsed Power Transistor
600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty
Rev. V6
Test Fixture Assembly
Contact MACOM for additional circuit information.
Correct Device Sequencing
Test Fixture Impedances
Freq. (MHz)
1030
ZIF (Ω)
ZOF (Ω)
1.5 + j0.5
1.5 + j0.6
1.5 + j0.6
Turning the device ON
1.1 - j1.5
1.1 - j1.4
1.1 - j1.3
1. Set VGS to the pinch-off (VP), typically -5 V.
2. Turn on VDS to nominal voltage (50 V).
3. Increase VGS until the IDS current is reached.
4. Apply RF power to desired level.
1060
1090
Turning the device OFF
Zif
1. Turn the RF power off.
2. Decrease VGS down to VP.
3. Decrease VDS down to 0 V.
4. Turn off VGS
INPUT
NETWORK
OUTPUT
NETWORK
Zof
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAGX-001090-600L0x
GaN on SiC HEMT Pulsed Power Transistor
600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty
Rev. V6
RF Power Transfer Curve (Output Power Vs. Input Power)
RF Power Transfer Curve (Drain Efficiency Vs. Output Power)
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAGX-001090-600L0x
GaN on SiC HEMT Pulsed Power Transistor
600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty
Rev. V6
Typical RF Data with Mode-S ELM ‘pulse’ conditions:
48 pulses of 32 µs on and 18 µs off, repeat every 24ms; Overall Duty Factor = 6.4%
VDD = 50 V; IDQ = 400 mA
6
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAGX-001090-600L0x
GaN on SiC HEMT Pulsed Power Transistor
600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty
Rev. V6
Outline Drawing MAGX-001090-600L00†
† Reference Application Note AN3025 for mounting/soldering recommendations.
Meets JEDEC moisture sensitivity level 1 requirements.
Plating is Ni/Au.
7
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAGX-001090-600L0x
GaN on SiC HEMT Pulsed Power Transistor
600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty
Rev. V6
Outline Drawing MAGX-001090-600L0S†
† Reference Application Note AN3025 for mounting/soldering recommendations.
Meets JEDEC moisture sensitivity level 1 requirements.
Plating is Ni/Au.
8
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAGX-001090-600L0x
GaN on SiC HEMT Pulsed Power Transistor
600 W Peak, 1030 to 1090 MHz, 32 μs Pulse, 2% Duty
Rev. V6
M/A-COM Technology Solutions Inc. All rights reserved.
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WHICH MAY RESULT FROM THE USE OF THESE MATERIALS.
MACOM products are not intended for use in medical, lifesaving or life sustaining applications. MACOM
customers using or selling MACOM products for use in such applications do so at their own risk and agree to
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9
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
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