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STW200NF03 [STMICROELECTRONICS]

N-CHANNEL 30V - 0.002 ohm - 120A TO-247 ULTRA LOW ON-RESISTANCE STripFET⑩ II MOSFET; N沟道30V - 0.002欧姆 - 120A TO- 247超低导通电阻STripFET⑩ II MOSFET
STW200NF03
型号： STW200NF03
厂家： ST    ST
描述：

N-CHANNEL 30V - 0.002 ohm - 120A TO-247 ULTRA LOW ON-RESISTANCE STripFET⑩ II MOSFET
N沟道30V - 0.002欧姆 - 120A TO- 247超低导通电阻STripFET⑩ II MOSFET
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STW200NF03  
N-CHANNEL 30V - 0.002 Ω - 120A TO-247  
ULTRA LOW ON-RESISTANCE STripFET™ II MOSFET  
V
R
I
D
TYPE  
DSS  
DS(on)  
STW200NF03  
30V  
<0.0028Ω  
120A  
■
■
TYPICAL R (on) = 0.002 Ω  
DS  
100% AVALANCHE TESTED  
DESCRIPTION  
This Power MOSFET series realized with STMicroelec-  
tronics unique STripFET process has specifically been  
designed to minimize input capacitance and gate charge.  
It is particularly suitable in OR-ing function circuits and  
synchronous rectification.  
3
2
1
APPLICATIONS  
■
■
■
HIGH-EFFICIENCY DC-DC CONVERTERS  
HIGH CURRENT, HIGH SWITCHING SPEED  
OR-ING FUNCTION  
TO-247  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
30  
Unit  
V
V
Drain-source Voltage (V = 0)  
DS  
GS  
V
Drain-gate Voltage (R = 20 kΩ)  
30  
V
DGR  
GS  
V
Gate- source Voltage  
± 20  
120  
120  
480  
350  
2.33  
1.5  
V
GS  
I (•)  
D
Drain Current (continuous) at T = 25°C  
A
C
I
Drain Current (continuous) at T = 100°C  
A
D
C
I
(••)  
Drain Current (pulsed)  
A
DM  
P
Total Dissipation at T = 25°C  
W
tot  
C
Derating Factor  
W/°C  
V/ns  
J
(1)  
Peak Diode Recovery voltage slope  
Single Pulse Avalanche Energy  
Storage Temperature  
dv/dt  
(2)  
E
4
AS  
T
stg  
-55 to 175  
°C  
T
Operating Junction Temperature  
j
(••) Pulse width limited by safe operating area.  
(•)Current limited by package  
(1) I ≤120A, di/dt ≤200A/µs, V ≤ V  
, T ≤ T  
(BR)DSS j JMAX.  
SD  
DD  
o
(2) Starting T = 25 C, I = 60 A, V = 15V  
j
D
DD  
October 2002  
1/8  
STW200NF03  
THERMAL DATA  
Rthj-case  
Rthj-amb  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Maximum Lead Temperature For Soldering Purpose  
Max  
Max  
Typ  
0.43  
50  
300  
°C/W  
°C/W  
°C  
T
l
ELECTRICAL CHARACTERISTICS (T  
= 25 °C unless otherwise specified)  
case  
OFF  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
V
I
= 250 µA, V = 0  
Drain-source Breakdown  
Voltage  
30  
V
(BR)DSS  
D
GS  
V
= Max Rating  
DS  
Zero Gate Voltage  
1
10  
µA  
µA  
I
DSS  
Drain Current (V = 0)  
V
DS  
= Max Rating T = 125°C  
GS  
C
Gate-body Leakage  
V
GS  
= ± 20V  
±100  
nA  
I
GSS  
Current (V = 0)  
DS  
(1)  
ON  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
3
Max.  
4
Unit  
V
V
GS(th)  
V
V
= V  
I
= 250 µA  
D
Gate Threshold Voltage  
2
DS  
GS  
GS  
= 10 V  
I
= 60 A  
Static Drain-source On  
Resistance  
0.002  
0.0028  
Ω
D
R
DS(on)  
DYNAMIC  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
(*)  
V
V
= 15 V  
I = 60 A  
g
Forward Transconductance  
200  
S
DS  
DS  
D
fs  
C
C
C
= 25V, f = 1 MHz, V = 0  
Input Capacitance  
Output Capacitance  
Reverse Transfer  
Capacitance  
10  
3.35  
385  
nF  
nF  
pF  
GS  
iss  
oss  
rss  
2/8  
STW200NF03  
ELECTRICAL CHARACTERISTICS (continued)  
SWITCHING ON  
Symbol  
Parameter  
Test Conditions  
= 15 V  
Min.  
Typ.  
Max.  
Unit  
V
R
I
= 60 A  
= 10 V  
GS  
Turn-on Delay Time  
Rise Time  
50  
300  
ns  
ns  
t
DD  
D
d(on)  
= 4.7 Ω  
V
t
r
G
(Resistive Load, Figure 3)  
Q
V
=15V I =120A V = 10 V  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
210  
63.5  
63.5  
280  
nC  
nC  
nC  
g
DD  
D
GS  
Q
gs  
Q
(see test circuit, Figure 4)  
gd  
SWITCHING OFF  
Symbol  
Parameter  
Test Conditions  
Min.  
Min.  
Typ.  
Max.  
Unit  
V
R
= 15 V  
= 4.7Ω,  
I
= 60 A  
= 10 V  
Turn-off Delay Time  
Fall Time  
100  
80  
ns  
ns  
t
DD  
D
d(off)  
V
GS  
t
G
f
(Resistive Load, Figure 3)  
SOURCE DRAIN DIODE  
Symbol  
Parameter  
Test Conditions  
Typ.  
Max.  
Unit  
I
Source-drain Current  
Source-drain Current (pulsed)  
120  
480  
A
A
SD  
( )  
•
I
SDM  
(*)  
I
I
= 120 A  
V
= 0  
GS  
V
Forward On Voltage  
1.3  
V
SD  
SD  
SD  
t
rr  
= 120 A  
= 20 V  
di/dt = 100A/µs  
T = 150°C  
j
Reverse Recovery Time  
Reverse Recovery Charge  
Reverse Recovery Current  
90  
250  
5.5  
ns  
nC  
A
Q
V
rr  
DD  
I
(see test circuit, Figure 5)  
RRM  
(*)  
(
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.  
•)Pulse width limited by safe operating area.  
Safe Operating Area  
Thermal Impedance  
3/8  
STW200NF03  
Output Characteristics  
Transfer Characteristics  
Transconductance  
Static Drain-source On Resistance  
Gate Charge vs Gate-source Voltage  
Capacitance Variations  
4/8  
STW200NF03  
Normalized Gate Threshold Voltage vs Temperature  
Normalized on Resistance vs Temperature  
Source-drain Diode Forward Characteristics  
Normalized Breakdown Voltage vs Temperature.  
.
.
5/8  
STW200NF03  
Fig. 1: Unclamped Inductive Load Test Circuit  
Fig. 2: Unclamped Inductive Waveform  
Fig. 3: Switching Times Test Circuits For Resistive  
Fig. 4: Gate Charge test Circuit  
Load  
Fig. 5: Test Circuit For Inductive Load Switching  
And Diode Recovery Times  
6/8  
STW200NF03  
TO-247 MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
4.7  
2.2  
0.4  
1
TYP.  
MAX.  
5.3  
MIN.  
0.185  
0.087  
0.016  
0.039  
0.079  
0.118  
MAX.  
0.209  
0.102  
0.031  
0.055  
0.094  
0.134  
A
D
2.6  
E
0.8  
F
1.4  
F3  
F4  
G
2
2.4  
3
3.4  
10.9  
0.429  
H
15.3  
19.7  
14.2  
15.9  
20.3  
14.8  
0.602  
0.776  
0.559  
0.626  
0.779  
0.582  
L
L3  
L4  
L5  
M
34.6  
5.5  
1.362  
0.217  
2
3
0.079  
0.118  
P025P  
7/8  
STW200NF03  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted  
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is registered trademark of STMicroelectronics  
2002 STMicroelectronics - All Rights Reserved  
All other names are the property of their respective owners.  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -  
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.  
http://www.st.com  
8/8  

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