STW20NC50 [STMICROELECTRONICS]
N-CHANNEL 500V - 0.22ohm - 18.4A TO-247 PowerMesh⑩II MOSFET; N沟道500V - 0.22ohm - 18.4A TO- 247 MOSFET PowerMesh⑩II
| 型号： | STW20NC50 |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 500V - 0.22ohm - 18.4A TO-247 PowerMesh⑩II MOSFET |
| 文件： | 总8页 (文件大小：252K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STW20NC50
N-CHANNEL 500V - 0.22Ω - 18.4A TO-247
PowerMesh™II MOSFET
TYPE
V
DSS
R
I
D
DS(on)
STW20NC50
500V
< 0.27Ω
18.4A
■
■
■
■
■
TYPICAL R (on) = 0.22Ω
DS
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
3
2
1
DESCRIPTION
The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
TO-247
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
SWITH MODE LOW POWER SUPPLIES
(SMPS)
■
■
HIGH CURRENT, HIGH SPEED SWITCHING
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
500
Unit
V
V
Drain-source Voltage (V = 0)
DS
GS
V
Drain-gate Voltage (R = 20 kΩ)
500
V
DGR
GS
V
GS
Gate- source Voltage
±30
V
I
Drain Current (continuos) at T = 25°C
18.4
11.6
A
D
C
I
Drain Current (continuos) at T = 100°C
A
D
C
I
(●)
Drain Current (pulsed)
73.6
220
A
DM
P
Total Dissipation at T = 25°C
W
TOT
C
Derating Factor
1.75
2
W/°C
V/ns
°C
°C
dv/dt(1)
Peak Diode Recovery voltage slope
Storage Temperature
T
stg
–65 to 150
150
T
Max. Operating Junction Temperature
j
(•)Pulse width limited by safe operating area
(1)I ≤18.4A, di/dt ≤100A/µs, V
≤ V , T ≤ T
(BR)DSS j JMAX.
SD
DD
May 2001
1/8
STW20NC50
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Thermal Resistance Junction-case Max
0.57
30
°C/W
°C/W
°C/W
°C
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
0.1
T
Maximum Lead Temperature For Soldering Purpose
300
l
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
Avalanche Current, Repetitive or Not-Repetitive
I
20
A
AR
(pulse width limited by T max)
j
Single Pulse Avalanche Energy
E
AS
960
mJ
(starting T = 25 °C, I = I , V = 50 V)
j
D
AR
DD
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Drain-source
Breakdown Voltage
Test Conditions
Min.
Typ.
Max.
Unit
V
I
D
= 250 µA, V = 0
500
V
(BR)DSS
GS
V
V
= Max Rating
1
µA
µA
DS
Zero Gate Voltage
I
I
DSS
Drain Current (V = 0)
GS
= Max Rating, T = 125 °C
50
DS
GS
C
Gate-body Leakage
V
= ±30V
±100
nA
GSS
Current (V = 0)
DS
ON (1)
Symbol
Parameter
Test Conditions
Min.
Typ.
3
Max.
4
Unit
V
V
GS(th)
V
V
= V , I = 250µA
Gate Threshold Voltage
2
DS
GS
D
= 10V, I = 9 A
0.22
0.27
Ω
GS
D
Static Drain-source On
Resistance
R
DS(on)
D(on)
V
V
> I
x R
DS
D(on) DS(on)max,
I
On State Drain Current
18.4
A
= 10V
GS
DYNAMIC
Symbol
Parameter
Test Conditions
> I x R
D(on)
= 9A
Min.
Typ.
Max.
Unit
V
DS
DS(on)max,
(1)
Forward Transconductance
18
S
g
fs
I
D
C
C
V = 25V, f = 1 MHz, V = 0
DS GS
Input Capacitance
Output Capacitance
2980
410
pF
pF
iss
oss
Reverse Transfer
Capacitance
C
rss
58
pF
2/8
STW20NC50
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
V
R
= 250V, I = 10A
Turn-on Delay Time
29
ns
d(on)
DD
D
= 4.7Ω V = 10V
G
GS
t
Rise Time
21
95
ns
r
(see test circuit, Figure 3)
V
V
= 400V, I = 20A,
DD
D
Q
Total Gate Charge
128
nC
g
= 10V
GS
Q
Gate-Source Charge
Gate-Drain Charge
14.7
41.7
nC
nC
gs
Q
gd
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
DD
= 400V, I = 20A,
D
t
Off-voltage Rise Time
R
= 4.7Ω, V = 10V
20
ns
r(Voff)
G
GS
(see test circuit, Figure 5)
t
Fall Time
21
58
ns
ns
f
t
Cross-over Time
c
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
18.4
73.6
1.6
Unit
A
I
Source-drain Current
SD
I
(2)
(1)
Source-drain Current (pulsed)
Forward On Voltage
A
SDM
V
I
I
= 18.4A, V = 0
V
SD
SD
GS
= 20A, di/dt = 100A/µs,
= 100V, T = 150°C
SD
t
rr
Reverse Recovery Time
V
480
ns
DD
j
(see test circuit, Figure 5)
Q
Reverse Recovery Charge
Reverse Recovery Current
5
µC
rr
I
21
A
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedence
3/8
STW20NC50
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/8
STW20NC50
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
STW20NC50
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
STW20NC50
TO-247 MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
4.85
2.20
0.40
1
TYP
MAX.
5.15
2.60
0.80
1.40
MIN.
0.19
MAX.
0.20
0.10
0.03
0.05
A
D
0.08
E
0.015
0.04
F
F1
F2
F3
F4
G
3
2
0.11
0.07
2
3
2.40
3.40
0.07
0.11
0.09
0.13
10.90
0.43
H
15.45
19.85
3.70
15.75
20.15
4.30
0.60
0.78
0.14
0.62
0.79
0.17
L
L1
L2
L3
L4
L5
M
18.50
0.72
14.20
2
14.80
3
0.56
0.07
0.14
0.58
0.11
34.60
5.50
1.36
0.21
5º
5º
V
60º
60º
V2
Dia
3.55
3.65
0.143
7/8
STW20NC50
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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8/8
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