STW20NK50Z [STMICROELECTRONICS]
N-CHANNEL 500V -0.23 OHM - 17A TO-220/D2PAK/I2SPAK/TO-247; N沟道500V -0.23 OHM - 17A TO- 220 / D2PAK / I2SPAK / TO- 247
| 型号： | STW20NK50Z |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 500V -0.23 OHM - 17A TO-220/D2PAK/I2SPAK/TO-247 |
| 文件： | 总13页 (文件大小：383K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP20NK50Z - STW20NK50Z
STB20NK50Z - STB20NK50Z-S
N-CHANNEL 500V -0.23Ω- 17A TO-220/D2PAK/I2SPAK/TO-247
Zener-Protected SuperMESH™ MOSFET
TYPE
V
R
I
D
Pw
DSS
DS(on)
STB20NK50Z
STB20NK50Z-S
STP20NK50Z
STW20NK50Z
500 V < 0.27 Ω 17 A
500 V < 0.27 Ω 17 A
500 V < 0.27 Ω 17 A
500 V < 0.27 Ω 17 A
190 W
190 W
190 W
190 W
3
3
2
2
1
1
■
■
■
TYPICAL R (on) = 0.23 Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTEDGATE CHARGE
MINIMIZED
DS
TO-220
TO-247
■
■
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEATIBILITY
3
3
2
1
1
2
D PAK
2
I SPAK
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
■
ORDERING INFORMATION
SALES TYPE
MARKING
PACKAGE
PACKAGING
2
STB20NK50ZT4
B20NK50Z
TAPE & REEL
D PAK
2
STB20NK50Z-S
STP20NK50Z
STW20NK50Z
B20NK50Z
P20NK50Z
W20NK50Z
TUBE
TUBE
TUBE
I SPAK
TO-220
TO-247
May 2004
1/13
STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
500
500
± 30
17
Unit
V
V
DS
Drain-source Voltage (V = 0)
GS
V
DGR
Drain-gate Voltage (R = 20 kΩ)
V
GS
V
Gate- source Voltage
V
GS
I
D
Drain Current (continuous) at T = 25°C
A
C
I
Drain Current (continuous) at T = 100°C
10.71
68
A
D
C
I
( )
Drain Current (pulsed)
A
DM
P
Total Dissipation at T = 25°C
190
1.51
6000
4.5
W
TOT
C
Derating Factor
W/°C
V
V
Gate source ESD(HBM-C=100 pF, R=1.5 KΩ)
Peak Diode Recovery voltage slope
ESD(G-S)
dv/dt (1)
V/ns
T
T
stg
Operating Junction Temperature
Storage Temperature
j
-55 to 150
°C
( ) Pulse width limited by safe operating area
(1) I ≤17A, di/dt ≤200A/µs, V ≤ V , T ≤ T
JMAX.
SD
DD
(BR)DSS
j
(*) Limited only by maximum temperature allowed
THERMAL DATA
TO-220/D2PAK
TO-247
Rthj-case
Rthj-amb
Thermal Resistance Junction-case Max
0.66
°C/W
°C/W
°C
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
62.5
50
T
300
l
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
17
A
(pulse width limited by T max)
j
E
AS
Single Pulse Avalanche Energy
850
mJ
(starting T = 25 °C, I = I , V = 50 V)
j
D
AR
DD
GATE-SOURCE ZENER DIODE
Symbol
BV
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
Typ.
Max.
Unit
Gate-Source Breakdown
Voltage
30
V
GSO
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/13
STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
ON/OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
Typ.
Max.
Unit
V
I
= 1 mA, V = 0
500
V
(BR)DSS
D
GS
Breakdown Voltage
I
Zero Gate Voltage
V
V
= Max Rating
= Max Rating, T = 125 °C
1
50
µA
µA
DSS
DS
DS
Drain Current (V = 0)
GS
C
I
Gate-body Leakage
V
= ± 20 V
±10
µA
GSS
GS
Current (V = 0)
DS
V
V
V
= V , I = 100 µA
Gate Threshold Voltage
3
3.75
0.23
4.5
V
GS(th)
DS
GS
GS
D
R
DS(on)
Static Drain-source On
Resistance
= 10V, I = 8.5 A
0.27
Ω
D
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
(1)
Forward Transconductance
V
V
= 15 V I = 8.5 A
13
S
fs
DS
, D
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
= 25V, f = 1 MHz, V = 0
2600
328
72
pF
pF
pF
iss
DS
GS
oss
rss
C
(3) Equivalent Output
Capacitance
= 0V, V = 0V to 640V
187
pF
oss eq.
GS
DS
SWITCHING ON/OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
R
= 250 V, I = 8.5 A
= 4.7Ω , V = 10 V
GS
28
20
70
15
ns
ns
ns
ns
d(on)
DD
D
t
r
G
t
(Resistive Load see, Figure 3)
d(off)
t
f
Q
V
V
= 400 V, I = 17 A,
= 10 V
85
15.5
42
119
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
nC
nC
nC
g
DD
GS
D
Q
gs
Q
gd
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
17
68
A
A
Source-drain Current
Source-drain Current (pulsed)
SD
(2)
I
SDM
V
(1)
I
= 17 A, V = 0
Forward On Voltage
1.6
V
SD
SD
GS
t
Q
I
= 17 A, di/dt = 100 A/µs
SD
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
355
3.90
22
ns
µC
A
rr
V = 100 V, T = 25°C
R j
rr
I
(see test circuit, Figure 5)
I = 17 A, di/dt = 100 A/µs
SD
V = 100 V, T = 150°C
R j
(see test circuit, Figure 5)
RRM
t
rr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
440
5.72
26
ns
µC
A
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
V
is defined as a constant equivalent capacitance giving the same charging time as C
when V increases from 0 to 80%
oss DS
oss eq.
.
DSS
3/13
STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S
Safe Operating Area for TO-220 / D2PAK/ I2SPAK Thermal Impedance for TO-220 / D2PAK/I2SPAK
Safe Operating Area for TO-247
Thermal Impedance for TO-247
Output Characteristics
Transfer Characteristics
4/13
STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S
Static Drain-source On Resistance
Transconductance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
5/13
STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S
Source-drain Diode Forward Characteristics
Normalized BVDSS vs Temperature
Maximum Avalanche Energy vs Temperature
6/13
STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
7/13
STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S
TO-220 MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
4.40
0.61
1.15
0.49
15.25
10
TYP
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
MIN.
0.173
0.024
0.045
0.019
0.60
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
A
b
b1
c
D
E
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
øP
Q
3.50
3.93
16.40
28.90
0.645
1.137
3.75
2.65
3.85
2.95
0.147
0.104
0.151
0.116
8/13
STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S
2
D PAK MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.4
MAX.
4.6
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
A
A1
A2
B
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
0.6
C2
D
1.36
9.35
D1
E
8
0.315
0.334
10
10.4
0.393
E1
G
8.5
4.88
15
5.28
15.85
1.4
0.192
0.590
0.050
0.055
0.094
0.208
0.625
0.055
0.068
0.126
L
L2
L3
M
1.27
1.4
1.75
3.2
2.4
1
9/13
STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S
TO-247 MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
4.85
2.20
0.40
1
TYP
MAX.
5.15
2.60
0.80
1.40
MIN.
0.19
MAX.
0.20
0.10
0.03
0.05
A
D
0.08
E
0.015
0.04
F
F1
F2
F3
F4
G
3
2
0.11
0.07
2
3
2.40
3.40
0.07
0.11
0.09
0.13
10.90
0.43
H
15.45
19.85
3.70
15.75
20.15
4.30
0.60
0.78
0.14
0.62
0.79
0.17
L
L1
L2
L3
L4
L5
M
18.50
0.72
14.20
2
14.80
3
0.56
0.07
0.14
0.58
0.11
34.60
5.50
1.36
0.21
5º
5º
V
60º
60º
V2
Dia
3.55
3.65
0.143
10/13
STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S
I2SPAK MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.40
2.49
0.70
1.14
0.45
1.23
8.95
10.00
4.88
16.7
1.27
13.82
MAX.
4.60
2.69
0.93
1.70
0.60
1.36
9.35
10.40
5.28
17.5
1.4
MIN.
0.173
0.098
0.027
0.045
0.018
0.048
0.352
0.394
0.192
0.657
0.05
MAX.
0.181
0.106
0.037
0.067
0.024
0.053
0.368
0.409
0.208
0.689
0.055
0.568
A
A1
B
B2
C
C2
D
E
G
L
L2
L3
14.42
0.544
11/13
STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
0.059
12.8
20.2
24.4
100
13.2 0.504 0.520
0795
26.4 0.960 1.039
3.937
30.4
1.197
TAPE MECHANICAL DATA
BASE QTY
BULK QTY
1000
mm
inch
1000
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
A0
B0
D
1.5
1.6 0.059 0.063
D1
E
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449 0.456
5.0 0.189 0.197
4.1 0.153 0.161
12.1 0.468 0.476
2.1 0.075 0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35 0.0098 0.0137
* on sales type
12/13
STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2004 STMicroelectronics - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
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http://www.st.com
13/13
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