STW20NM50FD [STMICROELECTRONICS]
N-CHANNEL 500V - 0.22ohm - 20A TO-247 FDmesh⑩ Power MOSFET with FAST DIODE; N沟道500V - 0.22ohm - 20A TO- 247 FDmesh⑩功率MOSFET，快速二极管
| 型号： | STW20NM50FD |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 500V - 0.22ohm - 20A TO-247 FDmesh⑩ Power MOSFET with FAST DIODE |
| 文件： | 总8页 (文件大小：250K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STW20NM50FD
N-CHANNEL 500V - 0.22Ω - 20A TO-247
FDmesh™ Power MOSFET (with FAST DIODE)
TYPE
V
DSS
R
I
D
DS(on)
STW20NM50FD
500V
<0.25Ω
20 A
■
■
■
■
■
■
TYPICAL R (on) = 0.22Ω
DS
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE CHARGE
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
3
2
1
TO-247
DESCRIPTION
The FDmesh™ associates all advantages of reduced
on-resistance and fast switching with an intrinsic fast-
recovery body diode. It is therefore strongly recom-
mended for bridge topologies, in particular ZVS phase-
shift converters.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS
FOR SMPS AND WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
500
Unit
V
V
DS
Drain-source Voltage (V = 0)
GS
V
Drain-gate Voltage (R = 20 kΩ)
500
V
DGR
GS
V
GS
Gate- source Voltage
±30
V
I
D
Drain Current (continuos) at T = 25°C
20
A
C
I
Drain Current (continuos) at T = 100°C
14
A
D
C
I
(●)
Drain Current (pulsed)
80
A
DM
P
TOT
Total Dissipation at T = 25°C
214
W
C
Derating Factor
1.42
20
W/°C
V/ns
°C
°C
dv/dt(1)
Peak Diode Recovery voltage slope
Storage Temperature
T
stg
–65 to 150
150
T
Max. Operating Junction Temperature
j
(•)Pulse width limited by safe operating area
(1)I ≤20A, di/dt ≤400A/µs, V ≤ V
, T ≤ T
j JMAX.
SD
DD
(BR)DSS
(*)Limited only by maximum temperature allowed
June 2002
1/8
STW20NM50FD
THERMAL DATA
Rthj-case
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
0.585
30
°C/W
°C/W
°C
Rthj-amb
Max
T
Maximum Lead Temperature For Soldering Purpose
300
l
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
Avalanche Current, Repetitive or Not-Repetitive
10
A
AR
(pulse width limited by T max)
j
E
AS
Single Pulse Avalanche Energy
700
mJ
(starting T = 25 °C, I = I , V = 35 V)
j
D
AR
DD
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
Typ.
Max.
Unit
V
I
D
= 250 µA, V = 0
500
V
(BR)DSS
GS
Breakdown Voltage
I
Zero Gate Voltage
V
V
V
= Max Rating
1
µA
µA
nA
DSS
DS
Drain Current (V = 0)
GS
= Max Rating, T = 125 °C
10
DS
GS
C
I
Gate-body Leakage
= ±30V
±100
GSS
Current (V = 0)
DS
ON (1)
Symbol
Parameter
Test Conditions
Min.
Typ.
4
Max.
5
Unit
V
V
GS(th)
V
V
= V , I = 250µA
Gate Threshold Voltage
3
DS
GS
D
R
Static Drain-source On
Resistance
= 10V, I = 10A
0.22
0.25
Ω
DS(on)
GS
D
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
9
S
I
D
= 10A
C
C
V = 25V, f = 1 MHz, V = 0
DS GS
Input Capacitance
Output Capacitance
1380
290
40
pF
pF
pF
iss
oss
C
rss
Reverse Transfer
Capacitance
C
(2) Equivalent Output
Capacitance
V
= 0V, V = 0V to 400V
130
2.8
pF
oss eq.
GS
DS
R
Gate Input Resistance
f=1 MHz Gate DC Bias=0
Test Signal Level=20mV
Open Drain
Ω
g
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. C
V
is defined as a constant equivalent capacitance giving the same charging time as C when V increases from 0 to 80%
oss DS
oss eq.
.
DSS
2/8
STW20NM50FD
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
V
R
= 250V, I = 10 A
Turn-on Delay Time
22
ns
d(on)
DD
D
= 4.7Ω V = 10V
G
GS
t
Rise Time
20
ns
r
(see test circuit, Figure 3)
Q
V
V
= 400V, I = 20A,
= 10V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
38
18
10
53
nC
nC
nC
g
DD
D
GS
Q
gs
Q
gd
SWITCHING OFF
Symbol
Parameter
Off-voltage Rise Time
Fall Time
Test Conditions
Min.
Typ.
6
Max.
Unit
ns
t
V
R
= 400V, I = 20 A,
r(Voff)
DD
D
= 4.7Ω, V = 10V
G
GS
t
15
30
ns
f
(see test circuit, Figure 5)
t
Cross-over Time
ns
c
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
20
Unit
A
I
Source-drain Current
SD
I
(2)
(1)
Source-drain Current (pulsed)
Forward On Voltage
80
A
SDM
V
I
I
= 20 A, V = 0
1.5
V
SD
SD
GS
t
= 20 A, di/dt = 100A/µs,
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
245
2
ns
µC
A
rr
SD
V
= 60V, T = 150°C
j
DD
Q
rr
RRM
(see test circuit, Figure 5)
I
16
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedance
3/8
STW20NM50FD
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/8
STW20NM50FD
Normalized Gate Thereshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
STW20NM50FD
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
STW20NM50FD
TO-247 MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
4.85
2.20
0.40
1
TYP
MAX.
5.15
2.60
0.80
1.40
MIN.
0.19
MAX.
0.20
0.10
0.03
0.05
A
D
0.08
E
0.015
0.04
F
F1
F2
F3
F4
G
3
2
0.11
0.07
2
3
2.40
3.40
0.07
0.11
0.09
0.13
10.90
0.43
H
15.45
19.85
3.70
15.75
20.15
4.30
0.60
0.78
0.14
0.62
0.79
0.17
L
L1
L2
L3
L4
L5
M
18.50
0.72
14.20
2
14.80
3
0.56
0.07
0.14
0.58
0.11
34.60
5.50
1.36
0.21
5º
5º
V
60º
60º
V2
Dia
3.55
3.65
0.143
7/8
STW20NM50FD
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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8/8
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