STW20NM60 [STMICROELECTRONICS]
N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh?Power MOSFET; N沟道600V - 仅为0.25mΩ - 20A TO- 220 / FP / D2PAK / I2PAK的MDmesh功率MOSFET ？
| 型号： | STW20NM60 |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh?Power MOSFET |
| 文件： | 总15页 (文件大小：359K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP20NM60-STP20NM60FP-STW20NM60
STB20NM60 - STB20NM60-1
N-CHANNEL 600V - 0.25Ω - 20A TO-220/FP/D²/I²PAK/TO-247
MDmesh™ MOSFET
Table 1: General Features
Figure 1: Package
TYPE
V
R
I
D
DSS
DS(on)
STP20NM60
STP20NM60FP
STB20NM60
STB20NM60-1
STW20NM60
600 V
600 V
600 V
600 V
600 V
< 0.29 Ω
< 0.29 Ω
< 0.29 Ω
< 0.29 Ω
< 0.29 Ω
20 A
20 A
20 A
20 A
20 A
3
2
1
3
2
1
TO-220
■ TYPICAL R (on) = 0.25 Ω
TO-220FP
DS
■ HIGH dv/dt AND AVALANCHE CAPABILITIES
■ 100% AVALANCHE TESTED
■ LOW INPUT CAPACITANCE AND GATE
CHARGE
3
2
1
3
1
TO-247
3
■ LOW GATE INPUT RESISTANCE
2
1
D²PAK
DESCRIPTION
I²PAK
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizon-
tal layout. The resulting product has an
outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the Company’s proprietary strip tech-
nique yields overall dynamic performance that is
significantly better than that of similar competi-
tion’s products.
Figure 2: Internal Schematic Diagram
APPLICATIONS
The MDmesh™ family is very suitable for increas-
ing power density of high voltage converters allow-
ing system miniaturization and higher efficiencies.
Table 2: Order Codes
SALES TYPE
STP20NM60
MARKING
P20NM60
P20NM60FP
B20NM60
B20NM60
W20NM60
PACKAGE
TO-220
TO-220FP
D²PAK
PACKAGING
TUBE
STP20NM60FP
STB20NM60T4
STB20NM60-1
STW20NM60
TUBE
TAPE & REEL
TUBE
I²PAK
TO-247
TUBE
Rev.2
February 2005
1/15
STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1
Table 3: Absolute Maximum ratings
Symbol
Parameter
Value
TO-220/D²PAK/
I²PAK/TO-247
600
Unit
TO-220FP
V
DS
Drain-source Voltage (V = 0)
V
V
GS
V
Drain-gate Voltage (R = 20 kΩ)
600
±30
DGR
GS
V
GS
Gate- source Voltage
V
I
Drain Current (continuous) at T = 25°C
20
12.6
80
20 (*)
12.6 (*)
80 (*)
45
A
D
C
I
D
Drain Current (continuous) at T = 100°C
A
C
I
( )
Drain Current (pulsed)
A
DM
P
Total Dissipation at T = 25°C
192
1.2
W
TOT
C
Derating Factor
0.36
W/°C
V/ns
V
dv/dt (1) Peak Diode Recovery voltage slope
15
V
ISO
Insulation Winthstand Voltage (DC)
Storage Temperature
--
2500
T
stg
-65 to 150
150
°C
°C
T
Max. Operating Junction Temperature
j
( ) Pulse width limited by safe operating area
(1) I
≤ 20 A, di/dt ≤ 400 A/µs, V
≤ V
T ≤ T
SD
DD
(BR)/DSS, j JMAX
(*) Limited only by maximum temperature allowed
Table 4: Thermal Data
TO-220/D²PAK/
I²PAK/TO-247
Unit
TO-220FP
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
0.65
2.8
°C/W
°C/W
°C
62.5
T
Maximum Lead Temperature For Soldering Purpose
300
l
Table 5: Avalanche Characteristics
Symbol
Parameter
Max. Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
10
A
(pulse width limited by T max)
j
E
Single Pulse Avalanche Energy
650
mJ
AS
(starting T = 25 °C, I = I , V = 50 V)
j
D
AR
DD
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
Table 6: On/Off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
Drain-source
I
D
= 250 µA, V = 0
600
V
(BR)DSS
GS
Breakdown Voltage
Zero Gate Voltage
I
V
= Max Rating
DS
= Max Rating, T = 125°C
1
10
µA
µA
DSS
Drain Current (V = 0)
V
DS
GS
C
I
Gate-body Leakage
V
GS
= ± 30V
±100
µA
GSS
Current (V = 0)
DS
V
V
V
= V , I = 250 µA
Gate Threshold Voltage
3
4
5
V
GS(th)
DS
GS
D
R
Static Drain-source On
Resistance
= 10V, I = 10 A
0.25
0.29
Ω
DS(on)
GS
D
2/15
STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Symbol
Parameter
Test Conditions
> I x R
DS(on)max,
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
11
S
DS
D(on)
I
D
= 10 A
C
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V = 0
1500
350
35
pF
pF
pF
iss
GS
C
oss
C
rss
C
(3) Equivalent Output
Capacitance
V
V
= 0V, V = 0V to 400 V
215
pF
oss eq.
GS
DS
t
t
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Cross-over Time
= 200 V, I = 10 A
25
20
6
11
21
ns
ns
ns
ns
ns
d(on)
DD
D
t
r
R = 4.7Ω V = 10 V
G GS
(Resistive Load see, Figure 3)
= 480 V, I = 20 A
d(off)
V
DD
t
f
D
(See test circuit, Figure 5)
t
c
Q
V
V
= 400 V, I = 20 A,
= 10V
54
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
39
10
20
nC
nC
nC
g
DD
D
Q
gs
gd
GS
Q
R
Gate Input Resistance
f = 1 MHz Gate DC Bias = 0
Test Signal Level = 20 mV
Open Drain
1.6
Ω
g
Table 8: Source Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
20
80
A
A
Source-drain Current
Source-drain Current (pulsed)
SD
(2)
I
SDM
V
(1)
I
I
= 20 A, V
= 0
GS
Forward On Voltage
1.5
V
SD
SD
t
rr
=20 A, di/dt = 100 A/µs
390
5
25
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ns
µC
A
SD
Q
V
= 100 V, T = 25°C
rr
DD
j
I
(see test circuit, Figure 5)
RRM
t
Q
I
V
=20 A, di/dt = 100 A/µs
510
6.5
26
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ns
µC
A
rr
SD
= 100 V, T = 150°C
rr
DD
j
I
(see test circuit, Figure 5)
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
V
is defined as a constant equivalent capacitance giving the same charging time as C
when V increases from 0 to 80%
oss DS
oss eq.
.
DSS
3/15
STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1
Figure 3: Safe Operating Area for TO-220/
D²PAK/I²PAK
Figure 6: Thermal Impedance for TO-220/
D²PAK/I²PAK
Figure 4: Safe Operating Area for TO-220FP
Figure 7: Thermal Impedance for TO-220FP
Figure 5: Safe Operating Area for TO-247
Figure 8: Thermal Impedance for TO-247
4/15
STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1
Figure 9: Output Characteristics
Figure 12: Gate Charge vs Gate-source Voltage
Figure 10: Transconductance
Figure 13: Normalized Gate Threshold Voltage
vs Temp.
Figure 11: Transfer Characteristics
Figure 14: Static Drain-source On Resistance
5/15
STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1
Figure 15: Capacitance Variations
Figure 17: Source-drain Diode Forward Char-
acteristics
Figure 16: Normalized On Resistance vs Tem-
perature
6/15
STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1
Figure 18: Unclamped Inductive Load Test Cir-
Figure 21: Unclamped Inductive Wafeform
cuit
Figure 19: Switching Times Test Circuit For
Resistive Load
Figure 22: Gate Charge Test Circuit
Figure 20: Test Circuit For Inductive Load
Switching and Diode Recovery Times
7/15
STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1
TO-220 MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.40
0.61
1.15
0.49
15.25
10
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
MIN.
0.173
0.024
0.045
0.019
0.60
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
A
b
b1
c
D
E
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
øP
Q
3.50
3.93
16.40
28.90
0.645
1.137
3.75
2.65
3.85
2.95
0.147
0.104
0.151
0.116
8/15
STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1
TO-220FP MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.4
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L5
L6
L7
Ø
16
0.630
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
1.126
.0385
0.114
0.626
0.354
0.118
1.204
0.417
0.141
0.645
0.366
0.126
16.4
9.3
3
3.2
L3
L6
L7
1
2 3
L5
L2
L4
9/15
STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1
2
TO-263 (D PAK) MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.32
0.00
0.71
1.15
0.46
1.22
8.89
8.01
10.04
MAX.
4.57
0.25
0.91
1.40
0.61
1.40
9.40
MIN.
0.178
0.00
MAX.
0.180
0.009
0.350
0.055
0.024
0.055
0.370
A
A1
b
0.028
0.045
0.018
0.048
0.350
0.315
0.395
b2
c
c2
D
9.02
2.54
0.355
0.010
D1
E
10.28
0.404
e
H
13.10
1.30
1.15
1.27
2.70
0°
13.70
1.70
1.39
1.77
3.10
8°
0.515
0.051
0.045
0.050
0.106
0°
0.540
0.067
0.054
0.069
L
L1
L2
L4
V2
0.122
8°
10/15
STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1
TO-262 (I2PAK) MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
10
MAX.
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
10.40
14
MIN.
0.173
0.094
0.024
0.044
0.019
0.048
0.352
0.094
0.194
0.393
0.511
0.137
0.050
MAX.
0.181
0.107
0.034
0.066
0.027
0.052
0.368
0.106
0.202
0.410
0.551
0.154
0.055
A
A1
b
b1
c
c2
D
e
e1
E
L
13
L1
L2
3.50
1.27
3.93
1.40
11/15
STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1
2
D PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
24.4
100
0.059
13.2 0.504 0.520
0795
26.4 0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
A0
B0
D
1.5
1.6 0.059 0.063
D1
E
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449 0.456
5.0 0.189 0.197
4.1 0.153 0.161
12.1 0.468 0.476
2.1 0.075 0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
W
* on sales type
12/15
STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1
TO-247 MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.85
2.20
1.0
MAX.
5.15
MIN.
0.19
MAX.
0.20
A
A1
b
2.60
0.086
0.039
0.079
0.118
0.015
0.781
0.608
0.102
0.055
0.094
0.134
0.03
1.40
b1
b2
c
2.0
2.40
3.0
3.40
0.40
19.85
15.45
0.80
D
20.15
15.75
0.793
0.620
E
e
5.45
18.50
5.50
0.214
0.728
0.216
L
14.20
3.70
14.80
4.30
0.560
0.14
0.582
0.17
L1
L2
øP
øR
S
3.55
4.50
3.65
5.50
0.140
0.177
0.143
0.216
13/15
STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1
Table 9: Revision History
Date
Revision
Description of Changes
26-Jul-2004
17-Feb-2005
1
2
First Release
Insert the TO-247 package
14/15
STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2005 STMicroelectronics - All Rights Reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
15/15
相关型号：
STW20NM60FD
N-CHANNEL 600V - 0.26W - 20A TO-220/TO-220FP/TO-247 FDmesh POWER MOSFET (with FAST DIODE)
STMICROELECTR
STW20NM65N
19A, 650V, 0.19ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, ROHS COMPLIANT PACKAGE-3
STMICROELECTR
STW21N65M5
N-channel 650 V, 0.150 Ω, 17 A MDmesh⢠V Power MOSFET D²PAK, TO-220FP, TO-220, I²PAK, TO-247
STMICROELECTR
STW21N90K5
N-channel 900 V, 0.25 Ω typ., 18.5 A Zener-protected SuperMESH⢠5 Power MOSFET in a D2PAK, TO-220FP, TO-220 and TO-247 packages
STMICROELECTR
STW21NM50N
N-CHANNEL 500V - 0.15ohm - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET
STMICROELECTR
STW21NM60N
N-channel 600 V - 0.17 Ω - 17 A TO-220 - TO-220FP - D2PAK - I2PAK - TO-247 second generation MDmesh? Power MOSFET
STMICROELECTR
STW21NM60ND
N-channel 600 V, 0.17 ヘ, 17 A FDmesh⑩ II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247
STMICROELECTR
STW22NM60
N-CHANNEL 600V - 0.19 ohm - 22A TO-220/FP/D2PAK/I2PAK/TO-247 MDmesh⑩Power MOSFET
STMICROELECTR
STW23NM50N
N-channel 500 V, 0.162 Ω, 17 A TO-220, TO-220FP, TO-247, D²PAK MDmesh⢠II Power MOSFET
STMICROELECTR
©2020 ICPDF网 联系我们和版权申明