STW20N65M5 [STMICROELECTRONICS]
N-channel 650 V, 0.160 typ., 18 A MDmesh V Power MOSFET in D2PAK, I2PAK;
| 型号： | STW20N65M5 |
| 厂家： | 
ST |
| 描述： | N-channel 650 V, 0.160 typ., 18 A MDmesh V Power MOSFET in D2PAK, I2PAK 局域网 开关 脉冲 晶体管 |
| 文件： | 总21页 (文件大小：1175K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STB20N65M5, STI20N65M5,
STP20N65M5, STW20N65M5
N-channel 650 V, 0.160 Ω typ., 18 A MDmesh™ V Power MOSFET
in D2PAK, I2PAK, TO-220 and TO-247 packages
Datasheet — production data
Features
TAB
TAB
VDS
TJmax
@
RDS(on)
max
Order codes
ID
2
1
3
3
2
1
STB20N65M5
STI20N65M5
STP20N65M5
STW20N65M5
D2PAK
I2PAK
710 V
0.19 Ω
18 A
TAB
■ Worldwide best RDS(on) * area
3
2
3
1
■ Higher VDSS rating and high dv/dt capability
■ Excellent switching performance
■ 100% avalanche tested
2
1
TO-220
TO-247
Figure 1.
Internal schematic diagram
Applications
■ Switching applications
$ꢅꢆꢇ 4!"ꢈ
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
'ꢅꢁꢈ
3ꢅꢉꢈ
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
!-ꢀꢁꢂꢃꢄVꢁ
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STB20N65M5
STI20N65M5
STP20N65M5
STW20N65M5
D2PAK
I2PAK
Tape and reel
20N65M5
TO-220
TO-247
Tube
February 2013
Doc ID 022865 Rev 2
1/21
This is information on a product in full production.
www.st.com
21
Contents
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
6
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
2/21
Doc ID 022865 Rev 2
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Gate-source voltage
Value
Unit
VGS
ID
25
18
V
A
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
ID
11.3
72
A
(1)
IDM
A
PTOT
Total dissipation at TC = 25 °C
130
W
dv/dt (1) Peak diode recovery voltage slope
15
V/ns
°C
°C
Tstg
Tj
Storage temperature
- 55 to 150
150
Max. operating junction temperature
≤ 18 A, di/dt ≤400 A/µs; V peak < V , V =400 V
(BR)DSS DD
1.
I
SD
DS
Table 3.
Symbol
Thermal data
Value
Parameter
Unit
I2PAK,
TO-220
D2PAK
TO-247
Rthj-case Thermal resistance junction-case max
0.96
62.5
°C/W
Rthj-amb Thermal resistance junction-ambient max
50
°C/W
°C/W
(1)
Rthj-pcb
Thermal resistance junction-pcb max
30
1. When mounted on 1 inch² FR-4, 1 Oz copper board.
Table 4.
Symbol
Avalanche characteristics
Parameter
Value
Unit
Avalanche current, repetetive or not
repetetive (pulse width limited by Tjmax
IAR
4
A
)
Single pulse avalanche energy (starting
tj=25°C, Id= IAR; Vdd=50 V)
EAS
270
mJ
Doc ID 022865 Rev 2
3/21
Electrical characteristics
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5.
Symbol
On /off states
Parameter
Test conditions
ID = 1 mA, VGS = 0
VDS = 650 V
Min.
Typ.
Max. Unit
Drain-source
breakdown voltage
V(BR)DSS
650
V
Zero gate voltage
1
µA
µA
IDSS
drain current (VGS = 0) VDS = 650 V, TC=125 °C
100
Gate-body leakage
IGSS
VGS
=
25 V
100 nA
current (VDS = 0)
VGS(th)
RDS(on)
Gate threshold voltage VDS = VGS, ID = 250 µA
Static drain-source
3
4
5
V
V
GS = 10 V, ID = 9 A
0.160
0.19
Ω
on-resistance
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max. Unit
Input capacitance
Output capacitance
Ciss
Coss
Crss
1434
38
pF
V
DS = 100 V, f = 1 MHz,
-
-
-
pF
pF
VGS = 0
Reverse transfer
capacitance
3.7
Equivalent
capacitance time
related
(1)
Co(tr)
-
118
pF
VDS = 0 to 520 V, VGS = 0
f = 1 MHz open drain
Equivalent
capacitance energy
related
(2)
Co(er)
-
-
35
-
-
pF
Intrinsic gate
resistance
RG
3.5
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 520 V, ID = 9 A,
VGS = 10 V
36
7.5
18
nC
nC
nC
-
-
(see Figure 18)
1. Time related is defined as a constant equivalent capacitance giving the same charging time as C
when
oss
V
increases from 0 to 80% V
DSS
DS
2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as C
oss
when V increases from 0 to 80% V
DS
DSS
4/21
Doc ID 022865 Rev 2
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
Electrical characteristics
Table 7.
Symbol
Switching times
Parameter
Test conditions
Min. Typ.
Max Unit
td(v)
tr(v)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
43
ns
VDD = 400 V, ID = 12 A,
7.5
ns
RG = 4.7 Ω, VGS = 10 V
(see Figure 19 and
Figure 22)
-
-
tf(i)
7.5
ns
tc(off)
11.5
ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
Source-drain current
18
72
A
A
-
-
(1)
ISDM
Source-drain current (pulsed)
(2)
VSD
Forward on voltage
ISD = 18 A, VGS = 0
1.5
V
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
288
4
ns
µC
A
ISD = 18 A, di/dt = 100 A/µs
Qrr
-
-
VDD = 100 V (see Figure 22)
IRRM
27
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 18 A, di/dt = 100 A/µs
DD = 100 V, Tj = 150 °C
(see Figure 22)
342
4.7
28
ns
µC
A
Qrr
V
IRRM
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 022865 Rev 2
5/21
Electrical characteristics
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for D²PAK,
I²PAK, TO-220
Figure 3.
Thermal impedance for D²PAK,
I²PAK, TO-220
AM15584v1
I
D
(A)
10
10µs
100µs
1ms
1
Tj=150°C
Tc=25°C
10ms
Single
pulse
0.1
10
VDS(V)
0.1
1
100
Figure 4.
Safe operating area for TO-247
Figure 5.
Thermal impedance for TO-247
AM15586v1
I
D
(A)
10
10µs
100µs
1ms
1
Tj=150°C
Tc=25°C
10ms
Single
pulse
0.1
10
VDS(V)
0.1
1
100
Figure 6.
Output characteristics
Figure 7.
Transfer characteristics
AM15587v1
AM15588v1
I
D
I
D
(A)
40
(A)
40
V
= 9, 10 V
GS
V
= 25 V
DS
35
30
25
35
V
= 8 V
GS
30
25
V
= 7 V
GS
20
15
10
5
20
15
10
5
V
= 6 V
25
GS
0
0
0
5
20
7
8
9
V
15
3
5
6
10
4
V
DS(V)
GS(V)
6/21
Doc ID 022865 Rev 2
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
Electrical characteristics
Figure 8.
Gate charge vs gate-source voltage Figure 9.
Static drain-source on-resistance
AM15589v1
AM15590v1
V
(V)
GS
R
DS(on)
(Ω)
VDS
VDS
V
DD=520V
=9A
(V)
0.195
0.185
0.175
12
V
GS=10V
500
I
D
10
400
300
200
8
6
4
0.165
0.155
0.145
100
0
0.135
2
0
0.125
20
40
0
10
30
Qg(nC)
0
5
10
15
ID(A)
Figure 10. Capacitance variations
Figure 11. Output capacitance stored energy
AM15591v1
AM15592v1
C
Eoss
(pF)
(µJ)
7
10000
1000
100
6
5
4
3
2
1
Ciss
Coss
Crss
10
1
0
0
0.1
100
200
400 500
600
1
10
V
DS(V)
100
300
VDS(V)
Figure 12. Normalized gate threshold voltage Figure 13. Normalized on-resistance vs
vs temperature temperature
AM05459v1
AM05460v1
V
GS(th)
R
DS(on)
(norm)
(norm)
1.10
2.1
I
V
= 250 µA
D
V
= 10V
GS
I = 9 A
1.9
1.7
1.5
1.3
1.1
= V
DS
GS
D
1.00
0.90
0.80
0.9
0.7
0.5
-50
-25
0.70
-50
-25
0
25 50 75
TJ(°C)
0
25 50 75
TJ(°C)
100
100
Doc ID 022865 Rev 2
7/21
Electrical characteristics
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
Figure 14. Normalized BVDSS vs temperature Figure 15. Drain-source diode forward
characteristics
AM10399v1
AM05461v1
V
DS
VSD
(V)
(norm)
TJ=-50°C
1.08
1.2
ID = 1mA
1.06
1.04
1.02
1.00
1.0
0.8
0.6
TJ=25°C
TJ=150°C
0.98
0.4
0.2
0.96
0.94
0.92
0
-50
0
-25
0
25 50 75
TJ
(°C)
10
20
30
40
50 ISD(A)
100
Figure 16. Switching losses vs gate resistance
(1)
AM15593v1
E
(μJ)
VDD=400V
VGS=10V
ID=12A
Eon
250
200
150
100
Eoff
50
0
20
30
40
10
RG(Ω)
0
1. Eon including reverse recovery of a SiC diode
8/21
Doc ID 022865 Rev 2
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
Test circuits
3
Test circuits
Figure 17. Switching times test circuit for
resistive load
Figure 18. Gate charge test circuit
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Figure 19. Test circuit for inductive load
switching and diode recovery times
Figure 20. Unclamped inductive load test
circuit
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Figure 21. Unclamped inductive waveform
Figure 22. Switching time waveform
- off
Inductive Load Turn
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AM05540v1
Doc ID 022865 Rev 2
9/21
Package mechanical data
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
10/21
Doc ID 022865 Rev 2
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
Package mechanical data
Table 9.
Dim.
D²PAK (TO-263) mechanical data
Min.
mm
Typ.
Max.
A
A1
b
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
4.60
0.23
0.93
1.70
0.60
1.36
9.35
b2
c
c2
D
D1
E
10.40
E1
e
8.50
2.54
e1
H
4.88
15
5.28
15.85
2.69
2.79
1.40
1.75
J1
L
2.49
2.29
1.27
1.30
L1
L2
R
0.4
V2
0°
8°
Doc ID 022865 Rev 2
11/21
Package mechanical data
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
Figure 23. D²PAK (TO-263) drawing
0079457_T
Figure 24. D²PAK footprint(a)
16.90
12.20
5.08
1.60
3.50
9.75
Footprint
a. All dimension are in millimeters
12/21
Doc ID 022865 Rev 2
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
Table 10. I²PAK (TO-262) mechanical data
Package mechanical data
mm.
typ
DIM.
min.
max.
A
A1
b
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
10
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
10.40
14
b1
c
c2
D
e
e1
E
L
13
L1
L2
3.50
1.27
3.93
1.40
Figure 25. I²PAK (TO-262) drawing
0004982_Rev_H
Doc ID 022865 Rev 2
13/21
Package mechanical data
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
Table 11. TO-220 type A mechanical data
Dim.
mm
Min.
Typ.
Max.
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
3.50
3.93
16.40
28.90
3.75
2.65
3.85
2.95
14/21
Doc ID 022865 Rev 2
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
Figure 26. TO-220 type A drawing
Package mechanical data
0015988_typeA_Rev_S
Doc ID 022865 Rev 2
15/21
Package mechanical data
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
Table 12. TO-247 mechanical data
Dim.
mm.
Typ.
Min.
Max.
A
A1
b
4.85
2.20
1.0
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
b1
b2
c
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
D
E
e
5.45
18.50
5.50
L
L1
L2
∅P
∅R
S
3.55
4.50
5.30
3.65
5.50
5.70
16/21
Doc ID 022865 Rev 2
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
Figure 27. TO-247 drawing
Package mechanical data
0075325_G
Doc ID 022865 Rev 2
17/21
Packaging mechanical data
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
5
Packaging mechanical data
Table 13. D²PAK (TO-263) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
D
10.5
15.7
1.5
10.7
15.9
1.6
A
B
C
D
G
N
T
330
1.5
12.8
20.2
24.4
100
13.2
26.4
30.4
D1
E
1.59
1.65
11.4
4.8
1.61
1.85
11.6
5.0
F
K0
P0
P1
P2
R
3.9
4.1
11.9
1.9
12.1
2.1
Base qty
Bulk qty
1000
1000
50
T
0.25
23.7
0.35
24.3
W
18/21
Doc ID 022865 Rev 2
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
Figure 28. Tape
Packaging mechanical data
10 pitches cumulative
tolerance on tape +/- 0.2 mm
P0
D
P2
Top cover
tape
T
E
F
W
K0
B0
A0
D1
P1
User direction of feed
R
Bending radius
User direction of feed
AM08852v2
Figure 29. Reel
T
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
B
D
C
N
A
G measured at hub
Full radius
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
Doc ID 022865 Rev 2
19/21
Revision history
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
6
Revision history
Table 14. Document revision history
Date
Revision
Changes
06-Mar-2012
1
First release.
– The part numbers STF20N65M5 and STFI20N65M5 have been
moved to a separate datasheet.
– Added: part numbers STB20N65M5 and STI20N65M5
– Modified: note1 on Table 2, Table 4 values and typical values of
Table 5, 6, 7, 8
01-Feb-2013
2
– Added: Rthj-pcb and note1 on Table 3
– Updated: Section 4: Package mechanical data
– Added: Section 2.1: Electrical characteristics (curves)
20/21
Doc ID 022865 Rev 2
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
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