STW20NA50 [STMICROELECTRONICS]
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR; N - 沟道增强模式快速功率MOS晶体管
| 型号： | STW20NA50 |
| 厂家： | 
ST |
| 描述： | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| 文件： | 总9页 (文件大小：151K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STW20NA50
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE
VDSS
RDS(on)
< 0.27 Ω
ID
STW20NA50
500 V
20 A
■
■
■
■
■
■
■
TYPICAL RDS(on) = 0.22 Ω
± 30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100oC
LOW INTRINSIC CAPACITANCES
GATE GHARGE MINIMIZED
3
2
1
REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
TO-247
This series of POWER MOSFETS represents the
most advanced high voltage technology. The op-
timized cell layout coupled with a new proprietary
edge termination concur to give the device low
RDS(on) and gate charge, unequalled ruggedness
and superior switching performance.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
Parameter
Value
500
Unit
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
V
V
VDG R
VGS
500
± 30
20
V
ID
A
ID
12.7
80
A
IDM(•)
Ptot
A
Total Dissipation at Tc = 25 oC
250
W
Derating Factor
2
W/oC
oC
oC
Tstg
Tj
Storage Temperature
-65 to 150
150
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
1/9
December 1996
STW20NA50
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Rthj-amb Thermal Resistance Case-sink
Max
Max
Typ
0.5
30
0.1
300
oC/W
oC/W
oC/W
oC
Tl
Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
20
A
(pulse width limited by Tj max, δ < 1%)
EAS
EAR
IAR
Single Pulse Avalanche Energy
1000
8
mJ
mJ
A
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
12.7
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (VGS = 0) VDS = Max Rating x 0.8 Tc = 125 C
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ID = 250 µA VGS = 0
500
V
IDSS
IGSS
VDS = Max Rating
25
250
µA
µA
o
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
± 100
nA
ON ( )
Symbol
Parameter
Test Conditions
Min.
Typ.
3
Max.
3.75
0.27
Unit
V
VGS(th)
Gate Threshold Voltage VDS = VGS ID = 250 µA
2.25
RDS(on) Static Drain-source On VGS = 10V ID = 10 A
Resistance
0.22
Ω
ID(on)
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
20
A
DYNAMIC
Symbol
Parameter
Forward
Test Conditions
Min.
Typ.
Max.
Unit
gfs ( )
VDS > ID(on) x RDS(on)max
ID = 10 A
10
17.5
S
Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V f = 1 MHz VGS = 0
3600
490
140
4700
650
180
pF
pF
pF
2/9
STW20NA50
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Turn-on Time
Rise Time
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
VDD = 250 V ID = 10 A
30
55
40
75
ns
ns
RG = 4.7 Ω
VGS = 10 V
(see test circuit, figure 3)
(di/dt)on Turn-on Current Slope VDD = 400 V ID = 20 A
RG = 47 Ω VGS = 10 V
160
A/µs
(see test circuit, figure 5)
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 400 V ID = 20 A VGS = 10 V
150
18
72
195
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 400 V ID = 20 A
RG = 4.7 Ω VGS = 10 V
(see test circuit, figure 5)
40
25
75
55
35
100
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Source-drain Current
Test Conditions
Min.
Typ.
Max.
Unit
ISD
20
80
A
A
ISDM(• ) Source-drain Current
(pulsed)
VSD ( ) Forward On Voltage
ISD = 20 A VGS = 0
1.6
V
trr
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 20 A di/dt = 100 A/µs
VDD = 100 V
(see test circuit, figure 5)
610
10.1
33
ns
Tj = 150 oC
Qrr
µC
IRRM
A
( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Areas
Thermal Impedance
3/9
STW20NA50
Derating Curve
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
4/9
STW20NA50
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Turn-on Current Slope
Turn-off Drain-source Voltage Slope
Cross-over Time
5/9
STW20NA50
Switching Safe Operating Area
Accidental Overload Area
Source-drain Diode Forward Characteristics
Fig. 1: Unclamped Inductive Load Test Circuits
Fig. 2: Unclamped Inductive Waveforms
6/9
STW20NA50
Fig. 3: Switching Times Test Circuits For
Fig. 4: Gate Charge Test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
7/9
STW20NA50
TO-247 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
5.3
MIN.
MAX.
0.208
0.113
0.098
0.055
0.088
0.135
0.031
0.833
0.215
0.628
A
A1
A2
b
4.7
0.185
2.87
2.5
1.5
1
0.059
0.039
1.4
b1
b2
C
2.25
3.43
0.8
3.05
0.4
0.120
0.015
0.803
0.213
0.602
0.613
0.145
0.208
0.137
D
20.4
5.43
15.3
15.57
3.7
21.18
5.47
15.95
e
E
L
L1
Q
4.3
0.169
0.230
0.146
5.3
5.84
3.71
ØP
3.5
D
L
L1
Q
ø
8/9
STW20NA50
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in lifesupport devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSONMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France- Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
.
9/9
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