STW20NB50 [STMICROELECTRONICS]
N - CHANNEL 500V - 0.22ohm - 20A - TO-247 PowerMESH MOSFET; N - CHANNEL 500V - 0.22ohm - 20A - TO- 247 MOSFET的PowerMESH
| 型号： | STW20NB50 |
| 厂家： | 
ST |
| 描述： | N - CHANNEL 500V - 0.22ohm - 20A - TO-247 PowerMESH MOSFET |
| 文件： | 总8页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STW20NB50
N - CHANNEL 500V - 0.22Ω - 20A - TO-247
PowerMESH
MOSFET
TYPE
VDSS
RDS(on)
ID
STW20NB50
500 V
< 0.25 Ω
20 A
■
■
■
■
■
■
■
TYPICAL RDS(on) = 0.22 Ω
EXTREMELY HIGH dv/dt CAPABILITY
± 30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100oC
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
3
2
1
DESCRIPTION
Using the latest high voltage technology,
STMicroelectronics has designed an advanced
family of power Mosfets with outstanding
performances. The new patent pending strip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
TO-247
INTERNAL SCHEMATIC DIAGRAM
RDS(on) per area, exceptional avalanche and
dv/dt capabilities and unrivalled gate charge and
switching characteristics.
APPLICATIONS
■
■
■
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES(SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VDGR
VGS
ID
Parameter
Value
500
Unit
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k
Gate-source Voltage
V
V
500
)
Ω
± 30
20
V
o
Drain Current (continuous) at Tc = 25 C
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
A
ID
12.7
80
A
I
DM(• )
A
o
Ptot
Total Dissipation at Tc = 25 C
250
W
Derating Factor
2
W/oC
V/ns
oC
oC
dv/dt(1) Peak Diode Recovery voltage slope
4
Tstg
Storage Temperature
-65 to 150
Tj
Max. Operating Junction Temperature
150
(•) Pulse width limited by safe operating area
(1) ISD ≤ 20A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/8
October 1999
STW20NB50
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Rthc-sink Thermal Resistance Case-sink
Max
Max
Typ
0.5
30
0.1
300
oC/W
oC/W
oC/W
oC
Tl
Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
20
A
(pulse width limited by Tj max, δ < 1%)
EAS
Single Pulse Avalanche Energy
1000
mJ
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
(Tcase = 25 oC unless otherwisespecified)
ELECTRICAL CHARACTERISTICS
OFF
Symbol
V(BR)DSS Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (VGS = 0) VDS = Max Rating
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
500
V
ID = 250 µA VGS = 0
IDSS
IGSS
VDS = Max Rating
10
100
µA
µA
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
± 100
nA
VGS = ± 30 V
ON ( )
Symbol
Parameter
Test Conditions
VDS = VGS ID = 250 µA
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold
Voltage
3
4
5
V
RDS(on)
ID(on)
Static Drain-source On VGS = 10 V ID = 10 A
Resistance
0.22
0.25
Ω
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
20
A
DYNAMIC
Symbol
Parameter
Forward
Test Conditions
VDS > ID(on) x RDS(on)max ID = 10 A
Min.
Typ.
Max.
Unit
gfs ( )
9
13.5
S
Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V f = 1 MHz VGS = 0
3600
460
55
4700
600
75
pF
pF
pF
2/8
STW20NB50
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Turn-on Time
Test Conditions
VDD = 250 V ID = 10 A
RG = 4.7 VGS = 10 V
Min.
Typ.
Max.
Unit
td(on)
tr
32
15
43
21
ns
ns
Rise Time
Ω
(see test circuit, figure 3)
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 400 V ID = 20 A VGS = 10 V
85
21
37
110
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 400 V ID = 20 A
20
25
47
27
33
62
ns
ns
ns
RG = 4.7
VGS = 10 V
Ω
(see test circuit, figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM ( )
Source-drain Current
Source-drain Current
(pulsed)
20
80
A
A
•
VSD ( ) Forward On Voltage
ISD = 20 A VGS = 0
1.6
V
trr
Reverse Recovery
Time
Reverse Recovery
Charge
700
9
ns
ISD = 20 A di/dt = 100 A/ s
VDD = 100 V
(see test circuit, figure 5)
µ
Tj = 150 oC
Qrr
C
µ
IRRM
Reverse Recovery
Current
25
A
( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/8
STW20NB50
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-sourceVoltage
CapacitanceVariations
4/8
STW20NB50
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drainDiode Forward Characteristics
5/8
STW20NB50
Fig. 1:
Fig. 2:
Unclamped Inductive Waveform
Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5:
Test Circuit For InductiveLoad Switching
And Diode Recovery Times
6/8
STW20NB50
TO-247 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.7
2.2
0.4
1
TYP.
MAX.
5.3
MIN.
0.185
0.087
0.016
0.039
0.079
0.118
MAX.
0.209
0.102
0.031
0.055
0.094
0.134
A
D
2.6
E
0.8
F
1.4
F3
F4
G
2
2.4
3
3.4
10.9
0.429
H
15.3
19.7
14.2
15.9
20.3
14.8
0.602
0.776
0.559
0.626
0.779
0.582
L
L3
L4
L5
M
34.6
5.5
1.362
0.217
2
3
0.079
0.118
P025P
7/8
STW20NB50
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parites which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificationmentioned in this publication are
subject tochange without notice. This publication supersedes and replaces all informaiton previouslysupplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systemswithout express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
1999 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
.
8/8
相关型号：
STW20NK70Z
N-CHANNEL 700V - 0.25W - 20A TO-247 Zener-Protected SuperMESH TM Power MOSFET
STMICROELECTR
STW20NM50FD
N-CHANNEL 500V - 0.22ohm - 20A TO-247 FDmesh⑩ Power MOSFET with FAST DIODE
STMICROELECTR
STW20NM60FD
N-CHANNEL 600V - 0.26W - 20A TO-220/TO-220FP/TO-247 FDmesh POWER MOSFET (with FAST DIODE)
STMICROELECTR
STW20NM65N
19A, 650V, 0.19ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, ROHS COMPLIANT PACKAGE-3
STMICROELECTR
STW21N65M5
N-channel 650 V, 0.150 Ω, 17 A MDmesh⢠V Power MOSFET D²PAK, TO-220FP, TO-220, I²PAK, TO-247
STMICROELECTR
STW21N90K5
N-channel 900 V, 0.25 Ω typ., 18.5 A Zener-protected SuperMESH⢠5 Power MOSFET in a D2PAK, TO-220FP, TO-220 and TO-247 packages
STMICROELECTR
STW21NM50N
N-CHANNEL 500V - 0.15ohm - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET
STMICROELECTR
STW21NM60N
N-channel 600 V - 0.17 Ω - 17 A TO-220 - TO-220FP - D2PAK - I2PAK - TO-247 second generation MDmesh? Power MOSFET
STMICROELECTR
©2020 ICPDF网 联系我们和版权申明